initial commit / add all books

35 files changed, 722 insertions, 0 deletions

diff --git a/2672/CH5/EX5.1/Ex5_1.sce b/2672/CH5/EX5.1/Ex5_1.sce
new file mode 100755
index 000000000..0721113bc
--- /dev/null
+++ b/2672/CH5/EX5.1/Ex5_1.sce
@@ -0,0 +1,30 @@
+//Example 5_1

+clc;

+clear;

+close;

+format('v',6);

+//given data : 

+rho_p=1.5;//ohm-cm

+rho_n=1;//ohm-cm

+e=1.6*10^-19;//C/electron

+//For Ge diode

+mu_p=1800;//cm^2/V-s//For Ge

+mu_n=3800;//cm^2/V-s//For Si

+VT=0.026;///eV//at room temperature

+ni=2.5*10^13;//cm^-3s

+//rho=1/(NA*e*mu)

+NA=1/(rho_p*e*mu_p);//cm^-3

+ND=1/(rho_n*e*mu_n);//cm^-3

+V0=VT*log(NA*ND/ni^2);//eV

+disp(V0,"(a) Height of potential barrier(eV)");

+//For Si diode

+mu_p=500;//cm^2/V-s//For Ge

+mu_n=1300;//cm^2/V-s//For Si

+VT=0.026;///eV//at room temperature

+ni=1.5*10^10;//cm^-3s

+//rho=1/(NA*e*mu)

+NA=1/(rho_p*e*mu_p);//cm^-3

+ND=1/(rho_n*e*mu_n);//cm^-3

+V0=VT*log(NA*ND/ni^2);//eV

+disp(V0,"(b) Height of potential barrier(eV)");

+///Answer in the texbook is not accurate.

diff --git a/2672/CH5/EX5.10/Ex5_10.sce b/2672/CH5/EX5.10/Ex5_10.sce
new file mode 100755
index 000000000..49c1aaf67
--- /dev/null
+++ b/2672/CH5/EX5.10/Ex5_10.sce
@@ -0,0 +1,21 @@
+//Example 5_10

+clc;

+clear;

+close;

+format('v',6);

+//given data : 

+sigma_p=3;//(ohm-cm)^-1

+sigma_n=0.1;//(ohm-cm)^-1

+Ln=0.15;//cm

+Lp=0.15;//cm

+e=1.6*10^-19;//C/electron

+mu_p=1800;//cm^2/V-s//For Ge

+mu_n=3800;//cm^2/V-s//For Si

+VT=0.026;///eV//at T=27 degree C

+A=1.5;//mm^2

+A=A*10^-6;//m^2

+b=mu_n/mu_p;//unitless

+ni=2.5*10^15;//m^-3

+sigma_i=(mu_n+mu_p)*ni*e;//(ohm-m)^-1

+I0=A*VT*b*sigma_i^2/(1+b)^2*(1/Lp/sigma_p+1/Ln/sigma_n)*10^6;//micro A

+disp(I0,"Reverse saturation point of current(micro A)");

diff --git a/2672/CH5/EX5.12/Ex5_12.sce b/2672/CH5/EX5.12/Ex5_12.sce
new file mode 100755
index 000000000..19f107f20
--- /dev/null
+++ b/2672/CH5/EX5.12/Ex5_12.sce
@@ -0,0 +1,21 @@
+//Example 5_12

+clc;

+clear;

+close;

+format('v',6);

+//given data : 

+A=5;//mm^2

+A=A*10^-2;//cm^2

+Ln=0.01;//cm

+Lp=0.01;//cm

+sigma_p=0.01;//(ohm-cm)^-1

+sigma_n=0.01;//(ohm-cm)^-1

+mu_p=500;//cm^2/V-s//For Ge

+mu_n=1300;//cm^2/V-s//For Si

+e=1.6*10^-19;//C/electron

+VT=0.026;///eV//at T=27 degree C

+b=mu_n/mu_p;//unitless

+ni=1.5*10^10;//m^-3

+sigma_i=(mu_n+mu_p)*ni*e;//(ohm-m)^-1

+I0=A*VT*b*sigma_i^2/(1+b)^2*(1/Lp/sigma_p+1/Ln/sigma_n)*10^12;//pA

+disp(I0,"Reverse saturation current(pA)");

diff --git a/2672/CH5/EX5.13/Ex5_13.sce b/2672/CH5/EX5.13/Ex5_13.sce
new file mode 100755
index 000000000..ff89e60bb
--- /dev/null
+++ b/2672/CH5/EX5.13/Ex5_13.sce
@@ -0,0 +1,30 @@
+//Example 5_13

+clc;

+clear;

+close;

+format('e',9);

+//given data : 

+Ln=0.1;//cm

+Lp=0.1;//cm

+e=1.6*10^-19;//C/electron

+//For Si

+ni=1.5*10^10;//m^-3

+sigma_p=0.01;//(ohm-cm)^-1

+sigma_n=0.01;//(ohm-cm)^-1

+mu_n=1300;//cm^2/V-s//For Si

+mu_p=500;//cm^2/V-s//For Ge

+b=mu_n/mu_p;//unitless

+sigma_i=(mu_n+mu_p)*ni*e;//(ohm-m)^-1

+YSi=b*sigma_i^2/(1+b)^2*(1/Lp/sigma_p+1/Ln/sigma_n);//(ohm-cm^2)^-1

+//For Ge

+ni=2.5*10^13;//m^-3

+sigma_p=1;//(ohm-cm)^-1

+sigma_n=1;//(ohm-cm)^-1

+mu_n=3800;//cm^2/V-s//For Si

+mu_p=1800;//cm^2/V-s//For Ge

+b=mu_n/mu_p;//unitless

+sigma_i=(mu_n+mu_p)*ni*e;//(ohm-m)^-1

+YGe=b*sigma_i^2/(1+b)^2*(1/Lp/sigma_p+1/Ln/sigma_n);//(ohm-cm^2)^-1

+ratio=YGe/YSi;

+disp(ratio,"Ratio of reverse saturation current in Ge to that in Si");

+//Answer given in the book is not accurate.

diff --git a/2672/CH5/EX5.14/Ex5_14.sce b/2672/CH5/EX5.14/Ex5_14.sce
new file mode 100755
index 000000000..f4d0bd0b2
--- /dev/null
+++ b/2672/CH5/EX5.14/Ex5_14.sce
@@ -0,0 +1,11 @@
+//Example 5_14

+clc;

+clear;

+close;

+format('v',6);

+//given data : 

+I0=9*10^-7;//A

+VF=0.1;//V

+I=I0*(exp(40*VF)-1)*10^6;//micro A

+disp(I,"Current flowing(micro A)");

+//Answer given in the book is not accurate.

diff --git a/2672/CH5/EX5.15/Ex5_15.sce b/2672/CH5/EX5.15/Ex5_15.sce
new file mode 100755
index 000000000..2f24e5e3d
--- /dev/null
+++ b/2672/CH5/EX5.15/Ex5_15.sce
@@ -0,0 +1,17 @@
+//Example 5_15

+clc;

+clear;

+close;

+format('v',7);

+//given data : 

+e=1.6*10^-19;//C/electron

+J0=500;//mA/m^2

+J0=J0/1000;//A/m^2

+T=350;//K

+Eta=1;//For Ge

+k=1.38*10^-23;//Boltzman constant

+J=10^5;//Am^-2

+//J=J0*(exp(e*V/Eta/kT-1)

+V=(1+log(J/J0))/e*Eta*k*T;//V

+disp(V,"Voltage to be applied at junction(V)");

+//Answer given in the book is not accurate.

diff --git a/2672/CH5/EX5.16/Ex5_16.sce b/2672/CH5/EX5.16/Ex5_16.sce
new file mode 100755
index 000000000..83636c289
--- /dev/null
+++ b/2672/CH5/EX5.16/Ex5_16.sce
@@ -0,0 +1,25 @@
+//Example 5_16

+clc;

+clear;

+close;

+format('v',7);

+//given data : 

+e=1.6*10^-19;//C/electron

+kB=1.38*10^-23;//Boltzman constant

+Is=0.15;//pA

+Is=Is*10^-12;//A

+V=0.55;//V(Forward Biased)

+Eta=1;//Assumed

+//At t=20 degee C

+t=20;//degree C

+T=t+273;//K

+VT=kB*T/e;//V

+I=Is*(exp(V/Eta/VT)-1)*1000;//mA

+//At t=100 degee C

+t=100;//degree C

+T=t+273;//K

+VT=kB*T/e;//V

+//Is increased by factor 2^8

+Is=Is*2^8;//A

+I=Is*(exp(V/Eta/VT)-1);//A

+disp(I,"Current in the diode(A)");

diff --git a/2672/CH5/EX5.17/Ex5_17.sce b/2672/CH5/EX5.17/Ex5_17.sce
new file mode 100755
index 000000000..6ff3e6d23
--- /dev/null
+++ b/2672/CH5/EX5.17/Ex5_17.sce
@@ -0,0 +1,36 @@
+//Example 5_17

+clc;

+clear;

+close;

+format('v',7);

+//given data : 

+e=1.6*10^-19;//C/electron

+kB=1.38*10^-23;//Boltzman constant

+Eta=2;//For Si diode

+I01=2;//micro A

+I02=4;//micro A

+Vz1=100;//V

+Vz2=100;//V

+VT=0.026;//V//Thermal temperature

+disp("When V=90V : ");

+V=90;//V

+//V<Vz1 & Vz2; Breakdown will not occur

+I1=I01/2;//micro A(For D1)

+disp(I1,"For D1, Current is (micro A)");

+I2=-I01/2;//micro A

+disp(I2,"For D2, Current is (micro A)");

+V2=Eta*VT*log(1-I01/I02);//V

+V1=V+V2;//V

+disp(V1,"Voltage V1(V) : ");

+format('v',5);

+V2=V2*1000;//mV

+disp(V2,"Voltage V2(mV) : ");

+disp("When V=110V : ");

+V=110;//V

+//V>Vz1 //D1 breakdown & D2 reverse biased

+I=I01;//micro A

+disp(I,"Current in the circuit is (micro A)");

+V1=-Vz1;///V

+V2=-(V-Vz2);//V

+disp(V1,"Voltage V1(V) : ");

+disp(V2,"Voltage V1(V) : ");

diff --git a/2672/CH5/EX5.18/Ex5_18.sce b/2672/CH5/EX5.18/Ex5_18.sce
new file mode 100755
index 000000000..125b5f256
--- /dev/null
+++ b/2672/CH5/EX5.18/Ex5_18.sce
@@ -0,0 +1,28 @@
+//Example 5_18

+clc;

+clear;

+close;

+format('v',6);

+//given data : 

+e=1.6*10^-19;//C/electron

+VT=0.026;//V//Thermal Voltage

+IBYI0=-90/100;//ratio

+//Part (a)

+//I=I0*(exp(V/VT)-1)

+V=log(IBYI0+1)*VT;//V

+disp(V,"(a) Required Voltage is (V)");

+//Part (b)

+format('v',5);

+V=0.05;//V(Forward bias)

+ratio=(exp(V/VT)-1)/(exp(-V/VT)-1);//ratio

+disp(ratio,"(b) Current ratio");

+//Part (c)

+format('v',6);

+I0=15;//micro A

+V=[0.1 0.2 0.3]*1000;//mV

+VT=VT*1000;//mV

+I1=I0*(exp(V(1)/VT)-1)/1000;//mA 

+I2=I0*(exp(V(2)/VT)-1)/1000;//mA 

+I3=I0*(exp(V(3)/VT)-1)/10^6;//A 

+disp("(c) Current for 0.1 V is "+string(I1)+" mA, for 0.2 V is "+string(I2)+" mA & for 0.3 V is "+string(I3)+" A.");

+//Answer given in the book is not accurate.

diff --git a/2672/CH5/EX5.19/Ex5_19.sce b/2672/CH5/EX5.19/Ex5_19.sce
new file mode 100755
index 000000000..9453fc187
--- /dev/null
+++ b/2672/CH5/EX5.19/Ex5_19.sce
@@ -0,0 +1,20 @@
+//Example 5_19

+clc;

+clear;

+close;

+format('v',4);

+//given data : 

+//Part (a)

+t1=25;//degree C

+t2=70;//degree C

+I0t2BYI0t1=2^((t2-t1)/10+1);//anticipated factor

+disp(I0t2BYI0t1,"(a) Anticipated factor");

+disp("I0(70 degree C) = "+string(I0t2BYI0t1)+"*I0(25 degree C)");

+//Part (b)

+format('v',6)

+t1=25;//degree C

+t2=150;//degree C

+I0t2BYI0t1=2^((t2-t1)/10);//anticipated factor

+disp(I0t2BYI0t1,"(b) Anticipated factor");

+disp("I0(150 degree C) = "+string(I0t2BYI0t1)+"*I0(25 degree C)");

+//Answer in the textbook is not accurate.

diff --git a/2672/CH5/EX5.2/Ex5_2.sce b/2672/CH5/EX5.2/Ex5_2.sce
new file mode 100755
index 000000000..30973afc2
--- /dev/null
+++ b/2672/CH5/EX5.2/Ex5_2.sce
@@ -0,0 +1,19 @@
+//Example 5_2

+clc;

+clear;

+close;

+format('e',9);

+//given data : 

+ND=10^16;//cm^-3

+A=4*10^-4;//cm^2

+NA=5*10^18;//cm^-3

+T=300;//K

+epsilon0=8.85*10^-14;//vaccum permittivity

+epsilonr=11.8;//relative permittivity

+e=1.6*10^-19;//C/electron

+ni=1.5*10^10;//cm^-3

+kBT=0.0259;//eV//at room temperture

+V0=kBT*log(NA*ND/ni^2);//V

+W=sqrt(2*epsilonr*epsilon0*V0/e*(1/NA+1/ND));//cm

+disp(W,"Width of depletion zone(cm)");

+///Answer in the texbook is not accurate.Calculation mistake in W.

diff --git a/2672/CH5/EX5.20/Ex5_20.sce b/2672/CH5/EX5.20/Ex5_20.sce
new file mode 100755
index 000000000..225c93264
--- /dev/null
+++ b/2672/CH5/EX5.20/Ex5_20.sce
@@ -0,0 +1,14 @@
+//Example 5_20

+clc;

+clear;

+close;

+format('v',5);

+//given data : 

+I=5;//micro A

+V=10;//V

+//1/I0*dI0/dT=0.15 & 1/I*dI0/dT=0.07

+I0=I/(0.15/0.07);//micro A

+//I=I0+IR

+IR=I-I0;//micro A

+R=V/IR;//Mohm

+disp(R,"Leakage Resistance(Mohm)");

diff --git a/2672/CH5/EX5.21/Ex5_21.sce b/2672/CH5/EX5.21/Ex5_21.sce
new file mode 100755
index 000000000..70af8af82
--- /dev/null
+++ b/2672/CH5/EX5.21/Ex5_21.sce
@@ -0,0 +1,16 @@
+//Example 5_21

+clc;

+clear;

+close;

+format('v',5);

+//given data : 

+Rt=0.15;//mW/degree C(Thermal resistance)

+t1=25;//degree C

+I0_t1=5;//micro A(at 25 degree C)

+delt=10;//degree C

+t2=t1+delt;//degree C

+Pout=Rt*(t2-t1);//mW

+//reverse current doubles at evry 10 degree C 

+I0_t2=2*I0_t1;//micro A

+V=Pout/(I0_t2/1000);//V

+disp(V,"Maximum reverse bias voltage(V)");

diff --git a/2672/CH5/EX5.22/Ex5_22.sce b/2672/CH5/EX5.22/Ex5_22.sce
new file mode 100755
index 000000000..71c2a6a10
--- /dev/null
+++ b/2672/CH5/EX5.22/Ex5_22.sce
@@ -0,0 +1,23 @@
+//Example 5_22

+clc;

+clear;

+close;

+format('v',5);

+//given data : 

+V=0.4;//V(Forward voltage)

+t1=25;//degree C

+t=150;//degree C

+T=t+273;//K

+T1=t1+273;//K

+VT=T/11600;//V

+//I0T=I01*2^((T-T1)/10)

+I0TBYI0T1=2^((T-T1)/10);//ratio of current

+Eta=2;//for Si

+I2ByI0T=(exp(V/Eta/VT)-1);//ratio of current

+//At 25 degree C

+VT1=T1/11600;//V

+I1ByI0T1=(exp(V/Eta/VT1)-1);//A///at 25 degree C

+I2ByI1=I2ByI0T/I1ByI0T1*I0TBYI0T1;///ratio of I2 & I1

+disp(I2ByI1,"Current multiplying factor is ");

+//Note : Solution is complete in this code.

+//In the textbook, extra lines are given for which data is not given.

diff --git a/2672/CH5/EX5.24/Ex5_24.sce b/2672/CH5/EX5.24/Ex5_24.sce
new file mode 100755
index 000000000..b2baa7fbf
--- /dev/null
+++ b/2672/CH5/EX5.24/Ex5_24.sce
@@ -0,0 +1,13 @@
+//Example 5_24

+clc;

+clear;

+close;

+format('e',10);

+//given data : 

+I=1;///mA

+CD=1.5;//micro F

+Eta=2;//for Si

+Dp=13;//for Si

+VT=0.026;//V(Thermal voltage)

+Lp=sqrt(CD/10^6*Dp*Eta*VT/(I*10^-3));//m

+disp(Lp,"Diffusion Length(m)");

diff --git a/2672/CH5/EX5.25/Ex5_25.sce b/2672/CH5/EX5.25/Ex5_25.sce
new file mode 100755
index 000000000..660ccd79f
--- /dev/null
+++ b/2672/CH5/EX5.25/Ex5_25.sce
@@ -0,0 +1,17 @@
+//Example 5_25

+clc;

+clear;

+close;

+format('v',7);

+//given data : 

+I0=20;///micro A

+VF=0.2;//V

+t=27;//degree C

+T=t+273;//K

+VT=T/11600;//V(Thermal voltage)

+Eta=1;//for Ge

+I=I0*10^-6*[exp(VF/Eta/VT)-1]*1000;//mA

+rdc=VT/(I0*10^-6)*exp(VF/Eta/VT)/10^6;//Mohm

+disp(rdc,"Static Resistance(Mohm) : ");

+//Note : Answer & Solution in the textbook is wrong as they calculated rdc for the values given in next example.

+//I0 taken 80micro A instead 20 micro A & VT taken for 125 degree C instead 25 degree C.

diff --git a/2672/CH5/EX5.26/Ex5_26.sce b/2672/CH5/EX5.26/Ex5_26.sce
new file mode 100755
index 000000000..0aef1363f
--- /dev/null
+++ b/2672/CH5/EX5.26/Ex5_26.sce
@@ -0,0 +1,20 @@
+//Example 5_26

+clc;

+clear;

+close;

+format('v',6);

+//given data : 

+I0=80;///micro A

+t=125;//degree C

+T=t+273;//K

+Eta=1;//for Ge

+VF=0.2;//V

+VT=T/11600;//V(Volt equivalent of temperature)

+///Part(a) In forward direction

+Rac=VT/(I0*10^-6)*exp(-VF/Eta/VT);//ohm

+disp(Rac,"(a) Dynamic Resistance in forward diection(ohm) :  ");

+///Part(b) In reverse direction

+format('v',8);

+Rac=VT/(I0*10^-6)*exp(VF/Eta/VT)/10^6;//Mohm

+disp(Rac,"(b) Dynamic Resistance in reverse diection(Mohm) :  ");

+//Answer in the textbook is not accurate.

diff --git a/2672/CH5/EX5.27/Ex5_27.sce b/2672/CH5/EX5.27/Ex5_27.sce
new file mode 100755
index 000000000..eee651a4d
--- /dev/null
+++ b/2672/CH5/EX5.27/Ex5_27.sce
@@ -0,0 +1,14 @@
+//Example 5_27

+clc;

+clear;

+close;

+format('v',7);

+//given data : 

+I0=1.5;///micro A

+T=300;//K

+VF=150;//mV

+kB=8.62*10^-5;//Boltzman Constant

+VT=T/11600;//V(Volt equivalent of temperature)

+rac=1/(I0*10^-6/kB/T*exp(VF/1000/VT));

+disp(rac,"Ac resistance(ohm)")

+//Answer and unit in the textbok is wrong.

diff --git a/2672/CH5/EX5.28/Ex5_28.sce b/2672/CH5/EX5.28/Ex5_28.sce
new file mode 100755
index 000000000..c7e1b9583
--- /dev/null
+++ b/2672/CH5/EX5.28/Ex5_28.sce
@@ -0,0 +1,14 @@
+//Example 5_28

+clc;

+clear;

+close;

+format('v',5);

+//given data : 

+Pmax=2.5;//W

+Vf=900;//mV

+If_max=Pmax/(Vf/1000);//A

+disp(If_max,"(a) Maximum allowable forward current(A) : ");

+Rf=Pmax/If_max^2;//ohm

+format('v',7);

+disp(Rf,"(b) Forward Diode Resistance(ohm)")

+//Answer in the textbok is wrong.

diff --git a/2672/CH5/EX5.29/Ex5_29.sce b/2672/CH5/EX5.29/Ex5_29.sce
new file mode 100755
index 000000000..21c849e27
--- /dev/null
+++ b/2672/CH5/EX5.29/Ex5_29.sce
@@ -0,0 +1,27 @@
+//Example 5_29

+clc;

+clear;

+close;

+format('v',5);

+//given data : 

+//for Ge diode

+rho_p=2;//ohm-cm(p-side resistivity)

+rho_n=1;//ohm-cm(n-side resistivity)

+e=1.6*10^-19;//C/electron

+mu_p=1800;//m^2/V-s

+mu_n=3800;//m^2/V-s

+VT=0.026;//V(Thermal Voltage)

+ni=2.5*10^13;//per cm^3(intrinsic concentration)

+NA=1/(rho_p*e*mu_p);//per cm^3

+ND=1/(rho_n*e*mu_n);//per cm^3

+V0=VT*log(ND*NA/ni^2);//eV

+disp(V0,"(a) Height of potential barrier(eV) : ");

+//for Si diode

+format('v',6);

+mu_p=500;//m^2/V-s

+mu_n=1300;//m^2/V-s

+ni=1.5*10^10;//per cm^3(intrinsic concentration)

+NA=1/(rho_p*e*mu_p);//per cm^3

+ND=1/(rho_n*e*mu_n);//per cm^3

+V0=VT*log(ND*NA/ni^2);//eV

+disp(V0,"(b) Height of potential barrier(eV) : ");

diff --git a/2672/CH5/EX5.3/Ex5_3.sce b/2672/CH5/EX5.3/Ex5_3.sce
new file mode 100755
index 000000000..834381f1a
--- /dev/null
+++ b/2672/CH5/EX5.3/Ex5_3.sce
@@ -0,0 +1,18 @@
+//Example 5_3

+clc;

+clear;

+close;

+format('v',5);

+//given data : 

+ND=1.2*10^21;//cm^-3

+NA=10^22;//cm^-3

+T=(273+30);//K

+kB=1.38*10^-23;//Boltzman constant

+e=1.6*10^-19;//C/electron

+VT=kB*T/e*1000;//mV//Thermal Voltage

+disp(VT,"Thermal Voltage(mV)")

+format('v',6);

+ni=1.5*10^16;//cm^-3

+V0=VT/1000*log(NA*ND/ni^2);//V

+disp(V0,"Barrier Voltage(V)");

+///Answer in the texbook is not accurate.

diff --git a/2672/CH5/EX5.30/Ex5_30.sce b/2672/CH5/EX5.30/Ex5_30.sce
new file mode 100755
index 000000000..96781ea05
--- /dev/null
+++ b/2672/CH5/EX5.30/Ex5_30.sce
@@ -0,0 +1,20 @@
+//Example 5_30

+clc;

+clear;

+close;

+format('v',6);

+//given data : 

+t=125;//degree C

+T=t+273;//K

+Eta=1;//for Ge

+VF=0.2;//V

+VT=T/11600;//V(Volt equivalent of temperature)

+I0=35;//micro A

+//Part(a) Forward Direction

+r=VT/(I0*10^-6)/exp(VF/VT);//ohm

+disp(r,"(a) Dynamic Resistance in forward direcion(ohm) : ");

+//Part(b) Reverse Direction

+r=VT/(I0*10^-6)/exp(-VF/VT);//ohm

+r=r/10^6;//Mohm

+disp(r,"(b) Dynamic Resistance in reverse direcion(Mohm) : ");

+///Answer in the textbook is not accurate.

diff --git a/2672/CH5/EX5.31/Ex5_31.sce b/2672/CH5/EX5.31/Ex5_31.sce
new file mode 100755
index 000000000..845d7a214
--- /dev/null
+++ b/2672/CH5/EX5.31/Ex5_31.sce
@@ -0,0 +1,16 @@
+//Example 5_31

+clc;

+clear;

+close;

+format('v',6);

+//given data : 

+Vz=10;//V

+Rs=1;//kohm

+RL=10;//kohm

+IL=5;//mA(Assumed)

+Vi=25:40;//V

+RLmin=Rs;//kohm

+Iz=(max(Vi)-Vz)/RLmin-IL;//mA

+disp(Iz,"(a) Maximum value of zener current(mA) : ");

+Iz_min=(min(Vi)-Vz)/Rs-IL;//mA

+disp(Iz_min,"(b) Minimum value of zener current(mA) : ");

diff --git a/2672/CH5/EX5.32/Ex5_32.sce b/2672/CH5/EX5.32/Ex5_32.sce
new file mode 100755
index 000000000..26aa1ea1f
--- /dev/null
+++ b/2672/CH5/EX5.32/Ex5_32.sce
@@ -0,0 +1,24 @@
+//Example 5_32

+clc;

+clear;

+close;

+format('v',6);

+//given data : 

+Vz=5;//V

+Pmax=250;//mW

+Vs=15;//V(Supply voltage)

+PL=50;//W(Load)

+Imax=Pmax/Vz;//mA(Maximum permissible current)

+//Minimum current to maintain constant voltage

+Imin=Imax-Imax*10/100;//mA

+Rmin=Vs/Imax;//kohm

+Rmax=Vs/Imin;//kohm

+disp("For maintainng constant voltage, Range of R is "+string(Rmin)+" kohm to "+string(Rmax)+" kohm.");

+//Diode loaded with 50W load

+Imax=PL/Vz;//mA(Maximum permissible current)

+//Minimum current to maintain constant voltage

+Imin=Imax-Imax*10/100;//mA

+Rmin=Vs/Imax;//kohm

+Rmax=Vs/Imin;//kohm

+disp("New range of R is "+string(Rmin)+" kohm to "+string(Rmax)+" kohm.");

+//Solution is not complete in the textbook. 

diff --git a/2672/CH5/EX5.33/Ex5_33.sce b/2672/CH5/EX5.33/Ex5_33.sce
new file mode 100755
index 000000000..6945ce635
--- /dev/null
+++ b/2672/CH5/EX5.33/Ex5_33.sce
@@ -0,0 +1,14 @@
+//Example 5_33

+clc;

+clear;

+close;

+format('v',6);

+//given data : 

+ND=2*10^15;//cm^-3

+Ep=1.5*10^5;//V/cm

+epsilon=8.854*10^-14;//Permittivity

+e=1.6*10^-19;//C/electron

+//Width of depletion region

+W=Ep*11.9*epsilon/e/ND;

+VBR=W*Ep/2;//V

+disp(VBR,"Breakdown Voltage(V) : ");

diff --git a/2672/CH5/EX5.35/Ex5_35.sce b/2672/CH5/EX5.35/Ex5_35.sce
new file mode 100755
index 000000000..aa1b9cebe
--- /dev/null
+++ b/2672/CH5/EX5.35/Ex5_35.sce
@@ -0,0 +1,28 @@
+//Example 5_35

+clc;

+clear;

+close;

+format('v',4);

+//given data : 

+Ez=2*10^7;///V/m

+//Vz=epsilon*Ez^2/(2*e*NA)

+//e*NA=sigp/mu_p; as sigp=NA*e*mu_p

+epsilon=16/(36*%pi*10^9);//F/m

+mu_p=1800;//cm^2/V-s

+sigp=poly(0,'sigp');//Notation : sigp=sigma_p

+Vz=epsilon*Ez^2/2*mu_p*10^-6/sigp;//V

+disp(Vz,"(a) Breakdown Voltage calculated and proved as ");

+format('v',6);

+sigma_i=1/45;//(ohm-cm)^-1

+sigma_p=sigma_i;//(ohm-cm)^-1//as p-material is intrinsic

+Vz=51/sigma_p;//V

+disp(Vz,"(b) Vz(V) : ");

+sigma_p=1/3.9;//(ohm-cm)^-1

+Vz=51/sigma_p;//V

+disp(Vz,"(c) Vz(V) : ");

+//Part (d)

+Vz=1.5;///V

+sigma_p=51/Vz;//V

+disp(sigma_p,"(d) Resistivity(ohm-cm)^-1 : ");

+//Note : Part(b) answer wrong in the book & part(d) not complete.

+//Note : sigp is used instead sigma_p as poly support only less than 5 character.

diff --git a/2672/CH5/EX5.36/Ex5_36.sce b/2672/CH5/EX5.36/Ex5_36.sce
new file mode 100755
index 000000000..506956e46
--- /dev/null
+++ b/2672/CH5/EX5.36/Ex5_36.sce
@@ -0,0 +1,25 @@
+//Example 5_36

+clc;

+clear;

+close;

+format('v',5);

+//given data : 

+Eta=1;//for Ge

+T=300;//K

+VT=0.026;//V(Thermal Voltage)

+VF=5;///V

+//I=I0;///given

+IByI0=1;//ratio

+//Using I=I0*(exp(V/VT)-1)

+V=log(IByI0+1)*VT;//V

+V2=VF-V;//V(Voltage across 2nd diode)

+disp(V2,"(a) Voltage across each junction(V) : ");

+//Part (b)

+format('v',6);

+Vz=4.9;//V

+Vrb=Vz;//V(Across reverse biased diode)

+V2=VF-Vrb;//V

+I0=6;//micro A

+I=I0*(exp(V2/VT)-1);//micro A

+disp(I,"(b) Current in the circuit(micro A) : ");

+//Note : Answer in the textbook is not accurate.

diff --git a/2672/CH5/EX5.37/Ex5_37.sce b/2672/CH5/EX5.37/Ex5_37.sce
new file mode 100755
index 000000000..9233db7f2
--- /dev/null
+++ b/2672/CH5/EX5.37/Ex5_37.sce
@@ -0,0 +1,14 @@
+//Example 5_37

+clc;

+clear;

+close;

+format('v',5);

+//given data : 

+I1=0.5;//mA

+V1=340;//mV

+I2=15;//mA

+V2=465;//mV

+kBTBye=25;//mV(It is kB*T/e)

+//I=Is*(exp(V/Eta/kBTBye)-1)

+Eta=(V2/kBTBye-V1/kBTBye)/log(I2/I1);//neglecting 1 as exp(V/Eta/kBTBye)>>1

+disp(Eta,"Ideality Factor(Eta) : ");

diff --git a/2672/CH5/EX5.38/Ex5_38.sce b/2672/CH5/EX5.38/Ex5_38.sce
new file mode 100755
index 000000000..d98452d64
--- /dev/null
+++ b/2672/CH5/EX5.38/Ex5_38.sce
@@ -0,0 +1,13 @@
+//Example 5_38

+clc;

+clear;

+close;

+format('v',7);

+//given data : 

+Vd=12;//V

+TC1=-1.7;//mV/degree C(Temperatre Coefficient of Si diode)

+//For series combination to have TC=0

+TC2=-TC1;//mV/degree C(Temperatre Coefficient of Avalanche diode)

+//In percentage

+TC2=TC2*10^-3/Vd*100;//%/degree C

+disp(TC2,"Required temperature coefficient(%/degree C) : ");

diff --git a/2672/CH5/EX5.39/Ex5_39.sce b/2672/CH5/EX5.39/Ex5_39.sce
new file mode 100755
index 000000000..99c58bb60
--- /dev/null
+++ b/2672/CH5/EX5.39/Ex5_39.sce
@@ -0,0 +1,27 @@
+//Example 5_39

+clc;

+clear;

+close;

+format('v',6);

+//given data : 

+//For IL=0;//A

+V0=60;//V

+V=200;//V(Supply Voltage)

+ID=5:40;//mA

+R=(V-V0)/max(ID);//kohm(R is >= this value)

+//For IL=ILmax;//A

+IT=max(ID);//mA

+ID=min(ID)///mA(ID<=this value)

+Imax=IT-ID;///mA

+disp(Imax,"(a) Imax(mA) : ");

+//Part (b)

+IL=25;//mA

+ID=5:40;//mA

+//Taking minimum current for good regulation

+IT=min(ID)+IL;///mA

+Vmax1=IT*R+V0;//V

+//Taking maximum current for good regulation

+IT=max(ID)+IL;///mA

+Vmax2=IT*R+V0;//V

+disp("(b) Without loss of regulation, V may vary from "+string(Vmax1)+" V to "+string(Vmax2)+" V.");

+

diff --git a/2672/CH5/EX5.4/Ex5_4.sce b/2672/CH5/EX5.4/Ex5_4.sce
new file mode 100755
index 000000000..33f86216e
--- /dev/null
+++ b/2672/CH5/EX5.4/Ex5_4.sce
@@ -0,0 +1,19 @@
+//Example 5_4

+clc;

+clear;

+close;

+format('v',5);

+//given data : 

+t1=25;//degree C

+t2=70;//degree C

+VB1=0.7;//V

+delV=-0.002*(t2-t1);//V

+VB2=VB1+delV;//V//barrier potential

+disp(VB2,"(a) Barrier potential at 70 degree C is (V)");

+//Part (b)

+t1=25;//degree C

+t2=0;//degree C

+VB1=0.7;//V

+delV=-0.002*(t2-t1);//V

+VB2=VB1+delV;//V//barrier potential

+disp(VB2,"(b) Barrier potential at 0 degree C is (V)");

diff --git a/2672/CH5/EX5.5/Ex5_5.sce b/2672/CH5/EX5.5/Ex5_5.sce
new file mode 100755
index 000000000..d2e531011
--- /dev/null
+++ b/2672/CH5/EX5.5/Ex5_5.sce
@@ -0,0 +1,23 @@
+//Example 5_5

+clc;

+clear;

+close;

+format('v',6);

+//Part(a) Derivation

+//Part(b)

+//given data : 

+mu_p=500;//cm^2/V-s

+q=1.6*10^-19;//C/electron

+rho=3;//ohm-cm

+V0=0.4;//V//Barrier Height

+Vd=4.5;//V//Reverse Voltage

+D=40;//mils

+D=D*10^-3;//inch

+D=D*2.54;//cm/in

+A=%pi/4*D^2;//cm^2

+NA=1/rho/mu_p/q;//cm^-3

+W=sqrt((V0+Vd)/(14.13*10^10));//m^2

+Vj=V0+Vd;//V

+CT=2.9*10^-4*sqrt(NA/Vj)*A;///pF

+disp(CT,"CT(pF) : ");

+//Answer given in the textbook is not accurate.

diff --git a/2672/CH5/EX5.6/Ex5_6.sce b/2672/CH5/EX5.6/Ex5_6.sce
new file mode 100755
index 000000000..dec2c063f
--- /dev/null
+++ b/2672/CH5/EX5.6/Ex5_6.sce
@@ -0,0 +1,15 @@
+//Example 5_6

+clc;

+clear;

+close;

+format('v',5);

+//given data : 

+V=5;//V

+CT=20;//pF

+lambda=CT*sqrt(V);//pm

+//increased V=V+1.5;//V

+V=V+1.5;//V

+CTnew=lambda/sqrt(V);//pF

+dCT=CT-CTnew;//pF

+disp(dCT,"Decrese in capacitance(pF)");

+//Answer given in the textbook is not accurate.

diff --git a/2672/CH5/EX5.7/Ex5_7.sce b/2672/CH5/EX5.7/Ex5_7.sce
new file mode 100755
index 000000000..588a66c97
--- /dev/null
+++ b/2672/CH5/EX5.7/Ex5_7.sce
@@ -0,0 +1,12 @@
+//Example 5_7

+clc;

+clear;

+close;

+format('v',6);

+//given data : 

+A=1.5*1.5;//mm^2

+A=A/100;//cm^2

+W=2*10^-4;//cm(Space charge thikness)

+epsilon=16/(36*%pi*10^11);//F/cm(For Ge)

+CT=epsilon*A/W*10^12;//pF

+disp(CT,"Barrier capacitance(pF)");

diff --git a/2672/CH5/EX5.8/Ex5_8.sce b/2672/CH5/EX5.8/Ex5_8.sce
new file mode 100755
index 000000000..0ac5985c1
--- /dev/null
+++ b/2672/CH5/EX5.8/Ex5_8.sce
@@ -0,0 +1,38 @@
+//Example 5_8

+clc;

+clear;

+close;

+format('v',4);

+//given data : 

+e=1.6*10^-19;//C/electron

+NA=2.5*10^20;//atoms/m^3

+epsilon=16/(36*%pi*10^9);//F/m(For Ge)

+Vd=0.2;//V//Barrier height

+//Part(a)

+V0=10;//V(reverse bias)

+W=sqrt((V0+Vd)*2*epsilon/e/NA)*10^6;//micro m

+disp(W,"(a) Width of depletion layer(micro m)");

+format('v',5);

+//Part(b)

+V0=0.1;//V(reverse bias)

+W=sqrt((V0+Vd)*2*epsilon/e/NA)*10^6;//micro m

+disp(W,"(b) Width of depletion layer(micro m)");

+//Part(c)

+V0=0.1;//V(forward bias)

+W=sqrt((Vd-V0)*2*epsilon/e/NA)*10^6;//micro m

+disp(W,"(c) Width of depletion layer(micro m)");

+//Part(d)

+A=1;//mm^2//Cross section area

+A=A/10^6;//m^2

+format('v',6);

+//For (a)

+V0=10;//V(reverse bias)

+W=sqrt((V0+Vd)*2*epsilon/e/NA)*10^6;//micro m

+CT=epsilon*A/(W*10^-6)*10^12;//pF

+disp(CT,"(d)(a) Space Charge capacitance(pF) ");

+//For (b)

+V0=0.1;//V(reverse bias)

+W=sqrt((V0+Vd)*2*epsilon/e/NA)*10^6;//micro m

+CT=epsilon*A/(W*10^-6)*10^12;//pF

+disp(CT,"(d)(b) Space Charge capacitance(pF) ");

+//Answer given in the textbook is not accurate.