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+//Example 5_17
+clc;
+clear;
+close;
+format('v',7);
+//given data :
+e=1.6*10^-19;//C/electron
+kB=1.38*10^-23;//Boltzman constant
+Eta=2;//For Si diode
+I01=2;//micro A
+I02=4;//micro A
+Vz1=100;//V
+Vz2=100;//V
+VT=0.026;//V//Thermal temperature
+disp("When V=90V : ");
+V=90;//V
+//V<Vz1 & Vz2; Breakdown will not occur
+I1=I01/2;//micro A(For D1)
+disp(I1,"For D1, Current is (micro A)");
+I2=-I01/2;//micro A
+disp(I2,"For D2, Current is (micro A)");
+V2=Eta*VT*log(1-I01/I02);//V
+V1=V+V2;//V
+disp(V1,"Voltage V1(V) : ");
+format('v',5);
+V2=V2*1000;//mV
+disp(V2,"Voltage V2(mV) : ");
+disp("When V=110V : ");
+V=110;//V
+//V>Vz1 //D1 breakdown & D2 reverse biased
+I=I01;//micro A
+disp(I,"Current in the circuit is (micro A)");
+V1=-Vz1;///V
+V2=-(V-Vz2);//V
+disp(V1,"Voltage V1(V) : ");
+disp(V2,"Voltage V1(V) : ");