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+//Example 5_1
+clc;
+clear;
+close;
+format('v',6);
+//given data : 
+rho_p=1.5;//ohm-cm
+rho_n=1;//ohm-cm
+e=1.6*10^-19;//C/electron
+//For Ge diode
+mu_p=1800;//cm^2/V-s//For Ge
+mu_n=3800;//cm^2/V-s//For Si
+VT=0.026;///eV//at room temperature
+ni=2.5*10^13;//cm^-3s
+//rho=1/(NA*e*mu)
+NA=1/(rho_p*e*mu_p);//cm^-3
+ND=1/(rho_n*e*mu_n);//cm^-3
+V0=VT*log(NA*ND/ni^2);//eV
+disp(V0,"(a) Height of potential barrier(eV)");
+//For Si diode
+mu_p=500;//cm^2/V-s//For Ge
+mu_n=1300;//cm^2/V-s//For Si
+VT=0.026;///eV//at room temperature
+ni=1.5*10^10;//cm^-3s
+//rho=1/(NA*e*mu)
+NA=1/(rho_p*e*mu_p);//cm^-3
+ND=1/(rho_n*e*mu_n);//cm^-3
+V0=VT*log(NA*ND/ni^2);//eV
+disp(V0,"(b) Height of potential barrier(eV)");
+///Answer in the texbook is not accurate.