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Diffstat (limited to '2672/CH5/EX5.29/Ex5_29.sce')
| -rwxr-xr-x | 2672/CH5/EX5.29/Ex5_29.sce | 27 |
1 files changed, 27 insertions, 0 deletions
diff --git a/2672/CH5/EX5.29/Ex5_29.sce b/2672/CH5/EX5.29/Ex5_29.sce new file mode 100755 index 000000000..21c849e27 --- /dev/null +++ b/2672/CH5/EX5.29/Ex5_29.sce @@ -0,0 +1,27 @@ +//Example 5_29
+clc;
+clear;
+close;
+format('v',5);
+//given data :
+//for Ge diode
+rho_p=2;//ohm-cm(p-side resistivity)
+rho_n=1;//ohm-cm(n-side resistivity)
+e=1.6*10^-19;//C/electron
+mu_p=1800;//m^2/V-s
+mu_n=3800;//m^2/V-s
+VT=0.026;//V(Thermal Voltage)
+ni=2.5*10^13;//per cm^3(intrinsic concentration)
+NA=1/(rho_p*e*mu_p);//per cm^3
+ND=1/(rho_n*e*mu_n);//per cm^3
+V0=VT*log(ND*NA/ni^2);//eV
+disp(V0,"(a) Height of potential barrier(eV) : ");
+//for Si diode
+format('v',6);
+mu_p=500;//m^2/V-s
+mu_n=1300;//m^2/V-s
+ni=1.5*10^10;//per cm^3(intrinsic concentration)
+NA=1/(rho_p*e*mu_p);//per cm^3
+ND=1/(rho_n*e*mu_n);//per cm^3
+V0=VT*log(ND*NA/ni^2);//eV
+disp(V0,"(b) Height of potential barrier(eV) : ");
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