diff options
Diffstat (limited to '2882')
181 files changed, 4433 insertions, 0 deletions
diff --git a/2882/CH1/EX1.1/Ex1_1.sce b/2882/CH1/EX1.1/Ex1_1.sce new file mode 100755 index 000000000..e5236cb18 --- /dev/null +++ b/2882/CH1/EX1.1/Ex1_1.sce @@ -0,0 +1,22 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 1 Introduction to Electronics Pg no. 8
+clear;
+clc;
+
+//Given Data
+
+//Colour coding of four band resistor
+//Given Sequence: [Gray Red Red Gold]
+gray=8;
+red=2;
+gold=0.05;
+
+//Solution
+
+R=(gray*10+red)*(10^(red));//Base resistance in ohms
+R_min=R*(1-0.05);//Least possible resistance in ohms using variance
+R_max=R*(1+0.05);//Most possible resistance in ohms using variance
+
+printf("Resistance should be in between %d ohms and %d ohms",R_min,R_max);
+//Error in textbook as 5% of 8200 is 410 and not 41
+
diff --git a/2882/CH1/EX1.10/Ex1_10.sce b/2882/CH1/EX1.10/Ex1_10.sce new file mode 100755 index 000000000..83dcd27b5 --- /dev/null +++ b/2882/CH1/EX1.10/Ex1_10.sce @@ -0,0 +1,16 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 1 Introduction to Electronics Pg no. 33
+//Solved Problem 3
+clear;
+clc;
+
+//Given Data
+
+R=120;//resistance in ohms
+P=1000;//power in watts
+
+//Solution
+
+I=sqrt(P/R);//current in amperes
+
+printf("I=%.2f Amperes.",I);//Displaying upto 2 places of decimal
diff --git a/2882/CH1/EX1.11/Ex1_11.sce b/2882/CH1/EX1.11/Ex1_11.sce new file mode 100755 index 000000000..fadc1342f --- /dev/null +++ b/2882/CH1/EX1.11/Ex1_11.sce @@ -0,0 +1,16 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 1 Introduction to Electronics Pg no. 33
+//Solved Problem 4
+clear;
+clc;
+
+//Given Data
+
+R=10;//resistance in ohms
+P=4;//power in watts
+
+//Solution
+
+I=sqrt(P/R);//current in amperes
+
+printf("Maximum safe current is I=%.3f Amperes.",I);//Displaying upto 3 places of decimal
diff --git a/2882/CH1/EX1.12/Ex1_12.sce b/2882/CH1/EX1.12/Ex1_12.sce new file mode 100755 index 000000000..1782ce750 --- /dev/null +++ b/2882/CH1/EX1.12/Ex1_12.sce @@ -0,0 +1,44 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 1 Introduction to Electronics Pg no. 33 and 34
+//Solved Problem 5
+clear;
+clc;
+
+//Given Data
+//Figure 1.34
+
+Rm=2;//resistance of motor in ohms
+V=10;//battery voltage in volts
+Rpot=10;//maximum resistance of potentiometer in ohms
+Ppot=100;//maximum power rating of potentiometer in watts
+
+//Solution
+
+Ipot=sqrt(Ppot/(Rpot+Rm));//maximum safe current possible through potentiometer in amperes
+printf("Current rating of potentiometer I = %.2f Amps\n\n",Ipot);
+
+Rp=10;//Resistance of potentiometer set in ohms
+I10=V/(Rp+Rm);//Current for corresponding resistance of potentiometer
+
+printf("When the potentiometer is set to %d Ohms,\nthe total resistance of the circuit is %d ohms.\n",Rp,Rp+Rm);
+printf("I = %.1f Amps\n",I10);
+
+if(I10<Ipot)
+ printf("\nThe amount of current is less than %.2f Amps and the potentiometer is safe.\n\n",Ipot);
+end
+
+
+Rp=2;//Resistance of potentiometer set in ohms
+I2=V/(Rp+Rm);//Current for corresponding resistance of potentiometer
+
+printf("When the potentiometer is set to %d Ohms,\nthe total resistance of the circuit is %d ohms\n",Rp,Rp+Rm);
+printf("I = %.1f Amps\n",I2);
+
+if(I10<Ipot)
+ printf("\nThe amount of current is less than %.2f Amps and the potentiometer is safe \n",Ipot);
+end
+
+Rp=1;//Resistance of potentiometer set in ohms
+I3=V/(Rp+Rm);//Current for corresponding resistance of potentiometer
+
+printf("\n However when potentiometer resistance is %d ohms, I= %d/%d = %.1f Amp.\nThis is greater than %.2f Amperes.\nThe potentiometer wire will get heated and temperature will rise.\nFor still lower values of potentiometer setting,\nI will be still higher and the potentiometer will be damaged.\nIt may even burn out.",Rp,V,(Rp+Rm),I3,Ipot)
diff --git a/2882/CH1/EX1.2/Ex1_2.sce b/2882/CH1/EX1.2/Ex1_2.sce new file mode 100755 index 000000000..34161d53a --- /dev/null +++ b/2882/CH1/EX1.2/Ex1_2.sce @@ -0,0 +1,22 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 1 Introduction to Electronics Pg no. 9
+clear;
+clc;
+
+//Given Data
+
+//Colour coding of four band resistor
+//Given Sequence: [Orange Orange Yellow Silver]
+orange=3;
+yellow=4;
+silver=0.1;
+
+//Solution
+
+R=(orange*10+orange)*(10^(yellow));//Base resistance in ohms
+R_min=R*(1-silver);//Least possible resistance in ohms using variance
+R_max=R*(1+silver);//Most possible resistance in ohms using variance
+
+printf("Resistance should be in between %d ohms and %d ohms",R_min,R_max);
+//Error in textbook as 330K is not 33000 and is 330000
+
diff --git a/2882/CH1/EX1.3/Ex1_3.sce b/2882/CH1/EX1.3/Ex1_3.sce new file mode 100755 index 000000000..dbba96e39 --- /dev/null +++ b/2882/CH1/EX1.3/Ex1_3.sce @@ -0,0 +1,23 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 1 Introduction to Electronics Pg no. 9
+clear;
+clc;
+
+//Given Data
+
+//Colour coding of five band resistor
+//Given Sequence: [Yellow Gray Violet Black Green]
+yellow=4;
+gray=8;
+violet=7;
+black=0;
+green=0.005;
+
+//Solution
+
+R=(yellow*100+gray*10+violet)*(10^(black));//Base resistance in ohms
+R_min=R*(1-green);//Least possible resistance in ohms using variance
+R_max=R*(1+green);//Most possible resistance in ohms using variance
+
+printf("Resistance should be in between %.2f ohms and %.2f ohms",R_min,R_max);//Upto 2 decimal points
+//Decimal approximation error w.r.t. textbook
diff --git a/2882/CH1/EX1.4/Ex1_4.sce b/2882/CH1/EX1.4/Ex1_4.sce new file mode 100755 index 000000000..7c58983fc --- /dev/null +++ b/2882/CH1/EX1.4/Ex1_4.sce @@ -0,0 +1,18 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 1 Introduction to Electronics Pg no. 12
+clear;
+clc;
+
+//Given Data
+
+area=1;//meter squares
+d=0.25;//distance between plates in centimeters
+e=8.85D-12;//permittivity of air
+
+//Solution
+
+d=d*10^-2;//converting distance into meters
+C=e*area/d;//Capacitance in Farads
+C=C*10^12;//Coverting capacitance to pF from F
+printf("C= %d pF\n",C);
+printf("The capacitor can thus store a charge of %d*10^-12 C with 1 Volt.",C);
diff --git a/2882/CH1/EX1.6/Ex1_6.sce b/2882/CH1/EX1.6/Ex1_6.sce new file mode 100755 index 000000000..37f37cecd --- /dev/null +++ b/2882/CH1/EX1.6/Ex1_6.sce @@ -0,0 +1,18 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 1 Introduction to Electronics Pg no. 17
+clear;
+clc;
+
+//Given Data
+//Fig. 1.16
+
+//Solution
+blue=6;
+gray=8;
+violet=50;
+gold=0.05;
+
+C=(blue*10+gray)*10^blue*10^-12;//Capacitance in Farads
+C=C*10^6;//Converting from Farads to micro Farads
+
+printf("The value of capacitance is %d uF \n and voltage rating is %d volts and tolerance of ±%d percent.",C,violet,gold*100);
diff --git a/2882/CH1/EX1.7/Ex1_7.sce b/2882/CH1/EX1.7/Ex1_7.sce new file mode 100755 index 000000000..d04ef4550 --- /dev/null +++ b/2882/CH1/EX1.7/Ex1_7.sce @@ -0,0 +1,21 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 1 Introduction to Electronics Pg no. 29
+clear;
+clc;
+
+//Given Data
+//Fig 1.33
+vi=6D-3;//input volatage in volts
+Rin=1200;//input resistance in ohms
+Ai=100;//current gain
+Ro=25000;//output resistance in ohms
+Rl=1000;//load impedance
+
+//Solution
+
+is=vi/Rin;//Input current
+i2=Ai*is;//Output circuit current source value
+iL=i2*(Ro/(Ro+Rl));//Current divider to find load current
+Vout=iL*Rl;
+
+printf("The output voltage is Vout=%.2f V",Vout);//Displaying upto 2 places of decimal
diff --git a/2882/CH1/EX1.8/Ex1_8.sce b/2882/CH1/EX1.8/Ex1_8.sce new file mode 100755 index 000000000..4a427b073 --- /dev/null +++ b/2882/CH1/EX1.8/Ex1_8.sce @@ -0,0 +1,17 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 1 Introduction to Electronics Pg no. 33
+//Solved Problem 1
+clear;
+clc;
+
+//Given Data
+
+wattage=100;//wattage in watts
+voltage=220;//voltage in volts
+
+//Solution
+
+I=wattage/voltage;//current in amperes
+
+printf("I=%.3f Amp.",I);//Displaying upto 3 places of decimal
+//Error due to decimal approximations
diff --git a/2882/CH1/EX1.9/Ex1_9.sce b/2882/CH1/EX1.9/Ex1_9.sce new file mode 100755 index 000000000..158907d19 --- /dev/null +++ b/2882/CH1/EX1.9/Ex1_9.sce @@ -0,0 +1,16 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 1 Introduction to Electronics Pg no. 33
+//Solved Problem 2
+clear;
+clc;
+
+//Given Data
+
+I=6;//current in amperes
+R=36;//resistance in ohms
+
+//Solution
+
+P=I^2*R;//power in watts
+
+printf("P=%d W.",P);
diff --git a/2882/CH10/EX10.1/Ex10_1.sce b/2882/CH10/EX10.1/Ex10_1.sce new file mode 100755 index 000000000..7eaf231bc --- /dev/null +++ b/2882/CH10/EX10.1/Ex10_1.sce @@ -0,0 +1,17 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 330
+clear;
+clc;
+
+//Given
+
+Vi=2D-3;//input voltage in volts
+Vo_dash=10;//output voltage with feedback in volts
+BVo_dash=200D-3;//feedback voltage in volts
+
+//Solution
+
+A=Vo_dash/Vi;//open loop gain
+Afb=Vo_dash/(Vi+BVo_dash);//closed loop gain
+B=1/Afb-1/A;//feedback gain beta
+printf("β = %.2f",B);
diff --git a/2882/CH10/EX10.10/Ex10_10.sce b/2882/CH10/EX10.10/Ex10_10.sce new file mode 100755 index 000000000..640ec7f0b --- /dev/null +++ b/2882/CH10/EX10.10/Ex10_10.sce @@ -0,0 +1,19 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 343 and 344
+clear;
+clc;
+
+//Given
+//Figure 10.16
+
+RD=4.7D3;//drain resistance in ohms
+Rs=1D3;//source resistance in ohms
+RF=15D3;//feedback resistance in ohms
+gm=5D-3;//transconductance in Siemens
+
+//Solution
+
+A=-gm*RD;//open loop gain
+Afb=A*RF/(RF-A*Rs);//closed loop gain
+printf("Gain without feedback A = %.1f\n ",A);
+printf("Gain with feedback Afb = %.2f",Afb);
diff --git a/2882/CH10/EX10.11/Ex10_11.sce b/2882/CH10/EX10.11/Ex10_11.sce new file mode 100755 index 000000000..c863dcd26 --- /dev/null +++ b/2882/CH10/EX10.11/Ex10_11.sce @@ -0,0 +1,23 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 345
+clear;
+clc;
+
+//Given
+//Figure 10.18
+
+VCC=15;//collector supply voltage in volts
+RC=1.8D3;//collector resistance in ohms
+RB=330;//base resistance in ohms
+RE=390;//emitter resistance in ohms
+hfe=150;//forward current gain
+hie=1000;//input resistance of transistor in ohms
+Vi=5D-3;//input rms voltage in volts
+
+//Solution
+
+A=-hfe/(hie+RE);//open loop gain
+B=-RE;//feedback factor beta
+Afb=A/(1+A*B);//closed loop gain
+AVfb=Afb*RC;//closed loop voltage gain
+printf("Voltage gain of the circuit (Av)fb = %.2f\n ",AVfb);
diff --git a/2882/CH10/EX10.12/Ex10_12.sce b/2882/CH10/EX10.12/Ex10_12.sce new file mode 100755 index 000000000..6b93c4310 --- /dev/null +++ b/2882/CH10/EX10.12/Ex10_12.sce @@ -0,0 +1,14 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 345
+clear;
+clc;
+
+//Given
+
+A0=200;//open loop midband gain
+B=0.05;//feedback factor beta
+
+//Solution
+
+Afb=A0/(1+A0*B);//closed loop midband gain
+printf("Voltage gain of the circuit (Av)fb = %.2f\n ",Afb);
diff --git a/2882/CH10/EX10.13/Ex10_13.sce b/2882/CH10/EX10.13/Ex10_13.sce new file mode 100755 index 000000000..20d8b57de --- /dev/null +++ b/2882/CH10/EX10.13/Ex10_13.sce @@ -0,0 +1,15 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 345 and 346
+clear;
+clc;
+
+//Given
+
+A0=200;//open loop midband gain
+B=0.05;//feedback factor beta
+fL=25;//open loop lower cutoff frequency in hertz
+
+//Solution
+
+fLfb=fL/(1+A0*B);//closed loop lower cutoff frequency in hertz
+printf("Closed loop lower cutoff frequency (fL)fb = %.2f Hz\n ",fLfb);
diff --git a/2882/CH10/EX10.14/Ex10_14.sce b/2882/CH10/EX10.14/Ex10_14.sce new file mode 100755 index 000000000..a417dd5d9 --- /dev/null +++ b/2882/CH10/EX10.14/Ex10_14.sce @@ -0,0 +1,15 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 346
+clear;
+clc;
+
+//Given
+
+A0=200;//open loop midband gain
+B=0.05;//feedback factor beta
+fH=100D3;//open loop higher cutoff frequency in hertz
+
+//Solution
+
+fHfb=fH*(1+A0*B);//closed loop higher cutoff frequency in hertz
+printf("Closed loop higher cutoff frequency (fH)fb = %.1f MHz\n ",fHfb/10^6);
diff --git a/2882/CH10/EX10.2/Ex10_2.sce b/2882/CH10/EX10.2/Ex10_2.sce new file mode 100755 index 000000000..84a01dc4f --- /dev/null +++ b/2882/CH10/EX10.2/Ex10_2.sce @@ -0,0 +1,28 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 330
+clear;
+clc;
+
+//Given
+
+Vi=25D-3;//input voltage in volts
+A=300;//open loop gain
+B=0.01;//feedback factor beta
+
+//Solution
+
+disp("(i)");
+Afb=A/(1+A*B);//closed loop gain
+printf("Afb = %d\n ",Afb);
+
+disp("(ii)");
+Vo_dash=Afb*Vi;//output voltage with feedback in volts
+printf("Vo'' = %.3f Volts\n ",Vo_dash);
+
+disp("(iii)");
+AB=A*B;//feedback factor Aβ
+printf("Feedback factor Aβ = %d\n ",AB);
+
+disp("(iv)");
+BVo_dash=B*Vo_dash;//feedback voltage in volts
+printf("Feedback voltage βVo'' = %.4f Volts",BVo_dash);
diff --git a/2882/CH10/EX10.3/Ex10_3.sce b/2882/CH10/EX10.3/Ex10_3.sce new file mode 100755 index 000000000..8c2e238b1 --- /dev/null +++ b/2882/CH10/EX10.3/Ex10_3.sce @@ -0,0 +1,15 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 330 and 331
+clear;
+clc;
+
+//Given
+
+A=500;//open loop gain
+B=0.1;//feedback factor beta
+dA_to_A=10/100;//variation in open loop gain
+
+//Solution
+
+dAfb_to_Afb=dA_to_A*1/(A*B);//variation in closed loop gain
+printf("Percentage variation in closed loop gain = %.1f %%",dAfb_to_Afb*100);
diff --git a/2882/CH10/EX10.4/Ex10_4.sce b/2882/CH10/EX10.4/Ex10_4.sce new file mode 100755 index 000000000..96328a72d --- /dev/null +++ b/2882/CH10/EX10.4/Ex10_4.sce @@ -0,0 +1,19 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 331
+clear;
+clc;
+
+//Given
+
+A=70;//open loop gain
+B=0.1;//feedback factor beta
+A_dash=A+0.05*A;//open loop gain increases by 5%
+
+//Solution
+
+Afb=A/(1+A*B);//closed loop gain at A open loop gain
+Afb_dash=A_dash/(1+A_dash*B);//closed loop gain at A_dash open loop gain
+PC=(Afb_dash-Afb)/Afb*100;//percentage change in closed loop gain
+printf("Percentage change in closed loop gain = %.1f %%",PC);
+
+//approximations taken in textbook
diff --git a/2882/CH10/EX10.5/Ex10_5.sce b/2882/CH10/EX10.5/Ex10_5.sce new file mode 100755 index 000000000..6f1d1d5f9 --- /dev/null +++ b/2882/CH10/EX10.5/Ex10_5.sce @@ -0,0 +1,24 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 332
+clear;
+clc;
+
+//Given
+
+A=100;//open loop gain
+D=0.05;//distortion
+Vi=0.5;//input voltage in volts
+
+//Solution
+
+disp("(a)");
+Vo=A*Vi;//output voltage in volts
+printf("Output signal voltage = %d Volts",Vo);
+
+disp("(b)");
+DV=D*Vo;//distortion voltage in volts
+printf("Distortion voltage = %.1f Volts",DV);
+
+disp("(c)");
+AOV=DV+Vo;//amplifier output voltage in volts
+printf("Amplifier output voltage = %.1f Volts",AOV);
diff --git a/2882/CH10/EX10.6/Ex10_6.sce b/2882/CH10/EX10.6/Ex10_6.sce new file mode 100755 index 000000000..cde334cd8 --- /dev/null +++ b/2882/CH10/EX10.6/Ex10_6.sce @@ -0,0 +1,23 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 332
+clear;
+clc;
+
+//Given
+
+A2=200;//second stage open loop gain
+B=0.1;//feedback gain beta
+D2=0.02;//second harmonic distortion
+
+//Solution
+
+disp("(a)");
+A2_dash=A2/(1+B*A2);//second stage closed loop gain
+A1=A2/A2_dash;//gain of the first stage
+printf("The gain of the first stage A1 = %d",A1);
+
+disp("(b)");
+D2_dash=D2/(1+B*A2);//total second harmonic distortion
+printf("The second harmonic distortion D2''= %.1f %%",D2_dash*100);
+
+//calculation error in textbook as A*B=20 and not 2
diff --git a/2882/CH10/EX10.7/Ex10_7.sce b/2882/CH10/EX10.7/Ex10_7.sce new file mode 100755 index 000000000..cb5f5dfe7 --- /dev/null +++ b/2882/CH10/EX10.7/Ex10_7.sce @@ -0,0 +1,21 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 333
+clear;
+clc;
+
+//Given
+
+A=250;//mid frequency open loop gain
+f1=100;//open loop lower cutoff frequency in hertz
+f2=25D3;//open loop higher cutoff frequency in hertz
+B=0.025;//feedback gain beta
+D2=0.02;//second harmonic distortion
+
+//Solution
+
+Afb=A/(1+A*B);//closed loop gain
+f1_dash=f1/(1+A*B);//closed loop lower cutoff frequency in hertz
+f2_dash=f2*(1+A*B);//closed loop higher cutoff frequency in hertz
+BW=f2_dash-f1_dash;//closed loop bandwidth
+printf("Closed loop gain Afb = %.2f\n ",Afb);
+printf("Closed loop bandwidth BW = %.2f kHz",BW/10^3);
diff --git a/2882/CH10/EX10.8/Ex10_8.sce b/2882/CH10/EX10.8/Ex10_8.sce new file mode 100755 index 000000000..8d7188af9 --- /dev/null +++ b/2882/CH10/EX10.8/Ex10_8.sce @@ -0,0 +1,23 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 341
+clear;
+clc;
+
+//Given
+//Figure 10.13
+
+RL=6.8D3;//load resistance in ohms
+RD=6.8D3;//drain resistance in ohms
+Rs=400;//source resistance in ohms
+R1=400D3;//voltage divider resistance R1 in ohms
+R2=100D3;//voltage divider resistance R2 in ohms
+gm=5000D-6;//transconductance in Siemens
+
+//Solution
+
+RL_dash=RL*RD/(RL+RD);//total equivalent load resistance in ohms
+A=-gm*RL_dash;//open loop gain
+B=-R2/(R1+R2);//feedback factor beta
+Afb=A/(1+A*B);//closed loop gain
+printf("Gain without feedback A = %d\n ",A);
+printf("Gain with feedback Afb = %.2f",Afb);
diff --git a/2882/CH10/EX10.9/Ex10_9.sce b/2882/CH10/EX10.9/Ex10_9.sce new file mode 100755 index 000000000..7133651d2 --- /dev/null +++ b/2882/CH10/EX10.9/Ex10_9.sce @@ -0,0 +1,19 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 10 Feedback in Amplifiers Pg no. 343
+clear;
+clc;
+
+//Given
+//Figure 10.16
+
+RD=4.7D3;//drain resistance in ohms
+Rs=1D3;//source resistance in ohms
+RF=10D6;//feedback resistance in ohms
+gm=2D-3;//transconductance in Siemens
+
+//Solution
+
+A=-gm*RD;//open loop gain
+Afb=A*RF/(RF-A*Rs);//closed loop gain
+printf("Gain without feedback A = %.1f\n ",A);
+printf("Gain with feedback Afb = %.1f",Afb);
diff --git a/2882/CH11/EX11.1/Ex11_1.sce b/2882/CH11/EX11.1/Ex11_1.sce new file mode 100755 index 000000000..622620cf3 --- /dev/null +++ b/2882/CH11/EX11.1/Ex11_1.sce @@ -0,0 +1,17 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 11 Oscillators and Multivibrators Pg no. 355 and 356
+clear;
+clc;
+
+//Given
+//Figure E 11.1
+
+L=20D-3;//colpitts inductance in henry
+C1=0.2D-6;//colpitts capacitor C1 in farads
+C2=0.02D-6;//colpitts capacitor C2 in farads
+
+//Solution
+
+Ce=C1*C2/(C1+C2);//equivalent capacitance in farads
+f0=1/(2*%pi*sqrt(L*Ce));//frequency of oscillations in hertz
+printf("Frequency of oscillations f0 = %.2f kHz",f0/10^3);
diff --git a/2882/CH11/EX11.2/Ex11_2.sce b/2882/CH11/EX11.2/Ex11_2.sce new file mode 100755 index 000000000..4c7562ce0 --- /dev/null +++ b/2882/CH11/EX11.2/Ex11_2.sce @@ -0,0 +1,28 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 11 Oscillators and Multivibrators Pg no. 356
+clear;
+clc;
+
+//Given
+//Figure E 11.1
+
+L=20D-3;//colpitts inductance in henry
+C1=0.2D-6;//colpitts capacitor C1 in farads
+C2=0.02D-6;//colpitts capacitor C2 in farads
+Qa=10;//Q point (a)
+Qb=5;//Q point (b)
+
+//Solution
+
+Ce=C1*C2/(C1+C2);//equivalent capacitance in farads
+disp("(a)");
+f0=1/(2*%pi*sqrt(L*Ce))*sqrt(Qa^2/(Qa^2+1));//frequency of oscillations in hertz
+printf("Q = %d\n",Qa);
+printf("Frequency of oscillations f0 = %.f Hz",f0);
+
+disp("(b)");
+f0=1/(2*%pi*sqrt(L*Ce))*sqrt(Qb^2/(Qb^2+1));//frequency of oscillations in hertz
+printf("Q = %d\n",Qb);
+printf("Frequency of oscillations f0 = %.f Hz",f0);
+
+//Round-off error in textbook
diff --git a/2882/CH11/EX11.3/Ex11_3.sce b/2882/CH11/EX11.3/Ex11_3.sce new file mode 100755 index 000000000..88adbfd57 --- /dev/null +++ b/2882/CH11/EX11.3/Ex11_3.sce @@ -0,0 +1,15 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 11 Oscillators and Multivibrators Pg no. 359
+clear;
+clc;
+
+//Given
+
+f=3.8D6;//frequency of oscillations in hertz
+L=0.2;//equivalent inductance in henry
+R=6000;//series resistance in ohms
+
+//Solution
+
+Q=2*%pi*f*L/R;//quality factor Q
+printf("Q = %d\n",Q);
diff --git a/2882/CH11/EX11.4/Ex11_4.sce b/2882/CH11/EX11.4/Ex11_4.sce new file mode 100755 index 000000000..2ad3cb16c --- /dev/null +++ b/2882/CH11/EX11.4/Ex11_4.sce @@ -0,0 +1,14 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 11 Oscillators and Multivibrators Pg no. 361
+clear;
+clc;
+
+//Given
+
+R=4.7D3;//R1,R2,R3 resistances in RC filter circuit in ohms
+C=2.2D-9;//C1,C2,C3 resistances in RC filter circuit in farads
+
+//Solution
+
+f0=1/(2*%pi*R*C*sqrt(6));//frequency of oscillation in hertz
+printf("Frequency of oscillation f0 = %.3f kHz",f0/10^3);
diff --git a/2882/CH11/EX11.5/Ex11_5.sce b/2882/CH11/EX11.5/Ex11_5.sce new file mode 100755 index 000000000..8c1064ad5 --- /dev/null +++ b/2882/CH11/EX11.5/Ex11_5.sce @@ -0,0 +1,17 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 11 Oscillators and Multivibrators Pg no. 361
+clear;
+clc;
+
+//Given
+
+R=4.7D3;//R1,R2,R3 resistances in RC filter circuit in ohms
+C=4.7D-9;//C1,C2,C3 resistances in RC filter circuit in farads
+A=29;//voltage gain of RC phase shift oscillator
+
+//Solution
+
+f0=1/(2*%pi*R*C*sqrt(6));//frequency of oscillation in hertz
+printf("Frequency of oscillation f0 = %.2f kHz\n ",f0/10^3);
+Rf=A*R;//feedback resistance in ohms
+printf("Feedback resistance Rf = %.1f kilo-ohms",Rf/10^3);
diff --git a/2882/CH11/EX11.6/Ex11_6.sce b/2882/CH11/EX11.6/Ex11_6.sce new file mode 100755 index 000000000..a69b5b044 --- /dev/null +++ b/2882/CH11/EX11.6/Ex11_6.sce @@ -0,0 +1,27 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 11 Oscillators and Multivibrators Pg no. 367 and 368
+clear;
+clc;
+
+//Given
+
+f1=40;//lowest operating frequency in hertz
+f2=40D3;//highest operating frequency in hertz
+C1=40D-12;//lowest capacitance of variable capacitor in farads
+C2=400D-12;//highest capacitance of variable capacitor in farads
+A=10;//gain of amplifier
+R2=7D3;//resistance of other arm of bridge in ohms
+
+//Solution
+
+R=1/(2*%pi*f1*C2);//resistance R of Wien bridge oscillator in ohms
+printf("Since,capacitance can change in the ratio of 10:1 only\n ");
+printf("For R = %.2f Mega-ohms frequency range 40 Hz to 400 Hz\n ",R/10^6);
+printf("For R = %.2f kilo-ohms frequency range 400 Hz to 4 kHz\n ",R/10^5);
+printf("For R = %.2f kilo-ohms frequency range 4 kHz to 40 kHz\n\n ",R/10^6);
+
+AB=1;//loop gain is unity for oscillator
+B=AB/A;//feedback factor beta
+R1_to_R2=1/(1/3-B)-1;//ratio of R1/R2 for wien bridge oscillator
+R1=R1_to_R2*R2;//resistor R1 in ohms
+printf("Resistance R1 = %d kilo-ohms",R1/10^3);
diff --git a/2882/CH11/EX11.7/Ex11_7.sce b/2882/CH11/EX11.7/Ex11_7.sce new file mode 100755 index 000000000..f32b7e08a --- /dev/null +++ b/2882/CH11/EX11.7/Ex11_7.sce @@ -0,0 +1,22 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 11 Oscillators and Multivibrators Pg no. 368
+clear;
+clc;
+
+//Given
+//Figure 11.18
+
+R1=1.5D3;//resistance R1 in ohms
+R2=1.5D3;//resistance R2 in ohms
+R3=12D3;//resistance R3 in ohms
+R4=12D3;//resistance R4 in ohms
+C1=0.068D-6;//capacitance C1 in farads
+C2=0.068D-6;//capacitance C2 in farads
+
+//Solution
+
+T1=0.693*R3*C1;//time period of initial part of waveform in seconds
+T2=0.693*R4*C2;//time period of final part of waveform in seconds
+T=T1+T2;//total time period of waveform in seconds
+f=1/T;//frequency of wave in hertz
+printf("Frequency of oscillations of astable multivibrator f = %d Hz",f);
diff --git a/2882/CH12/EX12.1/Ex12_1.sce b/2882/CH12/EX12.1/Ex12_1.sce new file mode 100755 index 000000000..2f514d77f --- /dev/null +++ b/2882/CH12/EX12.1/Ex12_1.sce @@ -0,0 +1,16 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 12 Modulation and Demodulation Pg no. 378
+clear;
+clc;
+
+//Given
+
+Emax=10;//maximum peak to peak voltage of an AM signal
+Emin=3;//minimum peak to peak voltage of an AM signal
+
+//Solution
+
+m=(Emax-Emin)/(Emax+Emin);//modulation index m
+printf("Percent modulation = %.2f %%\n\n ",m*100);
+Ac=(Emax-Emin)/(2*m);//amplitude of unmodulated carrier wave
+printf("Amplitude of unmodulated carrier wave Ac = %.1f Volts",Ac);
diff --git a/2882/CH12/EX12.10/Ex12_10.sce b/2882/CH12/EX12.10/Ex12_10.sce new file mode 100755 index 000000000..45c60cb6a --- /dev/null +++ b/2882/CH12/EX12.10/Ex12_10.sce @@ -0,0 +1,21 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 12 Modulation and Demodulation Pg no. 393
+clear;
+clc;
+
+//Given
+
+fc=150D6;//frequency of carrier wave in hertz
+fm=10D3;//frequency of modulating wave in hertz
+df=25D3;//maximum frequency deviation
+
+//Solution
+
+disp("(i)");
+B=df/fm;//modulation index for FM wave
+printf("Modulation index β = %.1f",B);
+disp("(ii)");
+printf("The three significant side frequency pairs are:\n ");
+printf("%d MHz ± %d kHz\n ",fc/10^6,fm/10^3);
+printf("%d MHz ± %d kHz\n ",fc/10^6,fm*2/10^3);
+printf("%d MHz ± %d kHz\n ",fc/10^6,fm*3/10^3);
diff --git a/2882/CH12/EX12.11/Ex12_11.sce b/2882/CH12/EX12.11/Ex12_11.sce new file mode 100755 index 000000000..b87b81fc7 --- /dev/null +++ b/2882/CH12/EX12.11/Ex12_11.sce @@ -0,0 +1,14 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 12 Modulation and Demodulation Pg no. 394
+clear;
+clc;
+
+//Given
+
+df=75D3;//maximum frequency deviation
+fm=20D3;//frequency of modulating wave in hertz
+
+//Solution
+
+BW=2*(df+fm);//bandwidth for FM wave
+printf("Bandwidth required in FM wave transmission B = %d kHz",BW/10^3);
diff --git a/2882/CH12/EX12.12/Ex12_12.sce b/2882/CH12/EX12.12/Ex12_12.sce new file mode 100755 index 000000000..4ac01c470 --- /dev/null +++ b/2882/CH12/EX12.12/Ex12_12.sce @@ -0,0 +1,17 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 12 Modulation and Demodulation Pg no. 394
+clear;
+clc;
+
+//Given
+
+df=6D3;//maximum frequency deviation
+fm=1.5D3;//frequency of modulating wave in hertz
+Pc=25;//carrier power in watts
+J=[-0.4 -0.07 0.36 0.43 0.28 0.13 0.05 0.02];//Bessel function values required for given problem's modualtion index
+
+//Solution
+
+B=df/fm;//modulation index
+PT=Pc*(J(1)^2+2*(J(2)^2+J(3)^2+J(4)^2+J(5)^2+J(6)^2+J(7)^2+J(8)^2));//total carrier power in watts
+printf("Total carrier power PT = %.f Watts",PT);
diff --git a/2882/CH12/EX12.2/Ex12_2.sce b/2882/CH12/EX12.2/Ex12_2.sce new file mode 100755 index 000000000..69d0aeb30 --- /dev/null +++ b/2882/CH12/EX12.2/Ex12_2.sce @@ -0,0 +1,28 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 12 Modulation and Demodulation Pg no. 378 and 379
+clear;
+clc;
+
+//Given
+
+fc=1000D3;//frequency of carrier wave in hertz
+fa1=450;//lowest audio frequency of modulating signal in hertz
+fa2=1650;//highest audio frequency of modulating signal in hertz
+
+//Solution
+
+disp("(i)");
+FS=fa2-fa1;//frequency span of each sideband in hertz
+printf("Frequency span of each sideband = %d Hz",FS);
+
+disp("(ii)");
+FMAX=fc+fa2;//maximum upper side frequency in hertz
+printf("Maximum upper side frequency = %.2f kHz",FMAX/10^3);
+
+disp("(iii)");
+FMIN=fc-fa2;//minimum upper side frequency in hertz
+printf("Minimum upper side frequency = %.2f kHz",FMIN/10^3);
+
+disp("(iv)");
+CW=FMAX-FMIN;//channel width in hertz
+printf("Channel width = %.1f kHz",CW/10^3);
diff --git a/2882/CH12/EX12.3/Ex12_3.sce b/2882/CH12/EX12.3/Ex12_3.sce new file mode 100755 index 000000000..1a3257d2e --- /dev/null +++ b/2882/CH12/EX12.3/Ex12_3.sce @@ -0,0 +1,18 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 12 Modulation and Demodulation Pg no. 379
+clear;
+clc;
+
+//Given
+
+RL=180;//load resistance in ohms
+Vc=90;//peak voltage of carrier wave in volts
+m=0.5;//modulation index of AM wave
+
+//Solution
+
+Pc=Vc^2/(2*RL);//unmodulated carrier power in watts
+Pt=Pc*(1+m^2/2);//total power developed by AM wave in watts
+Pcs=Pc*m^2/2;//power in sideband in watts
+printf("Total power developed by AM wave Pt = %.4f Watts\n ",Pt);
+printf("Power in sideband Pc = %.4f Watts",Pcs);
diff --git a/2882/CH12/EX12.4/Ex12_4.sce b/2882/CH12/EX12.4/Ex12_4.sce new file mode 100755 index 000000000..fb1cca204 --- /dev/null +++ b/2882/CH12/EX12.4/Ex12_4.sce @@ -0,0 +1,18 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 12 Modulation and Demodulation Pg no. 379
+clear;
+clc;
+
+//Given
+
+Vm=12;//modulating signal peak to peak voltage in volts
+Vc=9;//carrier wave peak amplitude in volts
+
+//Solution
+
+Emax=Vc+Vm/2;//maximum amplitude of AM signal in volts
+Emin=Vc-Vm/2;//minimum amplitude of AM signal in volts
+m=(Emax-Emin)/(Emax+Emin);//depth of modulation
+L1_to_L2=Emin/Emax;//ratio of side lengths
+printf("Depth of modulation = %.2f %%\n ",m*100);
+printf("Ratio of side-lengths L1/L2 = %.1f",L1_to_L2);
diff --git a/2882/CH12/EX12.6/12_6.pdf b/2882/CH12/EX12.6/12_6.pdf Binary files differnew file mode 100755 index 000000000..bf0ef39ea --- /dev/null +++ b/2882/CH12/EX12.6/12_6.pdf diff --git a/2882/CH12/EX12.6/Ex12_6.sce b/2882/CH12/EX12.6/Ex12_6.sce new file mode 100755 index 000000000..ab955c4b2 --- /dev/null +++ b/2882/CH12/EX12.6/Ex12_6.sce @@ -0,0 +1,33 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 12 Modulation and Demodulation Pg no. 380
+clear;
+clc;
+
+//Given
+
+fc=9D6;//frequency of carrier wave in hertz
+Vc=9;//peak value of carrier wave in volts
+fm=10D3;//frequency of modulating wave in hertz
+Vm=4.5;//amplitude of modulating sine wave in volts
+
+//Solution
+
+m=Vm/Vc;//modulation index
+printf("Modulation index m = %d %%",m*100);
+fu=fc+fm;//upper side band frequency in hertz
+fl=fc-fm;//lower side band frequency in hertz
+f=[fc-2*fm fc-fm fc fc+fm fc+2*fm];//frequency range
+for i=1:5
+ if f(i)==fu | f(i)==fl then
+ A(i)=m*Vc/2;//amplitude of side frequency in volts
+ else
+ A(i)=0;//amplitude of side frequency in volts
+ end
+end
+
+bar(f/10^6,A,0.1,'red');
+title("Frequency spectrum of AM wave");
+xlabel("Frequency in MHz");
+ylabel("Amplitude in volts");
+xstring(8.988,2.3,"lower side band");
+xstring(9.008,2.3,"upper side band");
diff --git a/2882/CH12/EX12.7/Ex12_7.sce b/2882/CH12/EX12.7/Ex12_7.sce new file mode 100755 index 000000000..9dbc55f51 --- /dev/null +++ b/2882/CH12/EX12.7/Ex12_7.sce @@ -0,0 +1,14 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 12 Modulation and Demodulation Pg no. 380 and 381
+clear;
+clc;
+
+//Given
+
+Ic=12;//rms current of unmodulated carrier in amperes
+I=14;//rms current of modulated carrier in amperes
+
+//Solution
+
+m=sqrt(2*((I/Ic)^2-1));//modulation index of AM wave
+printf("Modulation index m = %.2f %%",m*100);
diff --git a/2882/CH12/EX12.8/Ex12_8.sce b/2882/CH12/EX12.8/Ex12_8.sce new file mode 100755 index 000000000..b900bfb84 --- /dev/null +++ b/2882/CH12/EX12.8/Ex12_8.sce @@ -0,0 +1,16 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 12 Modulation and Demodulation Pg no. 381
+clear;
+clc;
+
+//Given
+
+Pc=10D3;//carrier wave power in watts
+m=0.75;//depth of modulation
+e=0.65;//efficiency of modulator
+
+//Solution
+
+Ps=0.5*m^2*Pc;//total sideband power in watts
+Pa=Ps/e;//required audio power in watts
+printf("Required audio power P = %.3f kW",Pa/10^3);
diff --git a/2882/CH12/EX12.9/Ex12_9.sce b/2882/CH12/EX12.9/Ex12_9.sce new file mode 100755 index 000000000..77d73834a --- /dev/null +++ b/2882/CH12/EX12.9/Ex12_9.sce @@ -0,0 +1,16 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 12 Modulation and Demodulation Pg no. 381
+clear;
+clc;
+
+//Given
+
+Pc1=12D3;//carrier wave power in watts
+m1=0.75;//maximum modulation index that can be achieved
+m2=0.45;//modulation index for AM wave
+
+//Solution
+
+Pt=Pc1*(1+m1^2/2);//total power of AM wave in watts
+Pc2=Pt/(1+m2^2/2);//carrier power in watts for m=m2
+printf("Carrier power cane be raised to Pc = %.2f kW",Pc2/10^3);
diff --git a/2882/CH13/EX13.1/Ex13_1.sce b/2882/CH13/EX13.1/Ex13_1.sce new file mode 100755 index 000000000..25931c41f --- /dev/null +++ b/2882/CH13/EX13.1/Ex13_1.sce @@ -0,0 +1,23 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 13 Integrated Circuit Pg no. 414
+clear;
+clc;
+
+//Given
+
+R_a=0.5D3;//diffused resistor value in ohms
+R_b=10D3;//diffused resistor value in ohms
+Rs_n=10;//n-type emitter diffusion sheet resistance in ohms
+Rs_p=250;//p-type emitter diffusion sheet resistance in ohms
+
+//Solution
+
+disp("(a)");
+L_to_W_a=R_a/Rs_n;//length to width ratio of resistor
+printf(" Thus a %d ohm resistor of n-type emitter diffusion,\n can be fabricated by using a pattern of\n ",R_a);
+printf("%d mils long by 1 mil wide",L_to_W_a);
+
+disp("(b)");
+L_to_W_b=R_b/Rs_p;//length to width ratio of resistor
+printf(" Thus a %d kilo-ohm resistor of p-type emitter diffusion,\n can be fabricated by using a pattern of\n ",R_b/10^3);
+printf("%d mils long by 1 mil wide",L_to_W_b);
diff --git a/2882/CH14/EX14.1/Ex14_1.sce b/2882/CH14/EX14.1/Ex14_1.sce new file mode 100755 index 000000000..c90e588db --- /dev/null +++ b/2882/CH14/EX14.1/Ex14_1.sce @@ -0,0 +1,24 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 14 Operational Amplifiers Pg no. 418
+clear;
+clc;
+
+//Given
+
+vICM1=0;//input common mode vOltage in volts
+vOCM1=5.4;//output common mode vOltage in volts
+vICM2=1.05;//input common mode vOltage in volts
+vOCM2=5.0;//output common mode vOltage in volts
+vO2=5.4;//vOltage at collector of transistor Q2 in volts
+
+//Solution
+
+disp("vOCM=5.4 Volts");
+vO1=2*vOCM1-vO2;//vOltage at collector of transistor Q1 in volts
+printf("Voltage at collector of transistor Q1 vO1 = %.1f volts\n ",vO1);
+
+disp("vOCM=5.0 Volts");
+vO1=2*vOCM2-vO2;//vOltage at collector of transistor Q1 in volts
+printf("Voltage at collector of transistor Q1 vO1 = %.1f volts",vO1);
+
+//calculation for vOCM=5 Volts not done in textbook
diff --git a/2882/CH14/EX14.10/Ex14_10.sce b/2882/CH14/EX14.10/Ex14_10.sce new file mode 100755 index 000000000..d7caa1392 --- /dev/null +++ b/2882/CH14/EX14.10/Ex14_10.sce @@ -0,0 +1,17 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 14 Operational Amplifiers Pg no. 432
+clear;
+clc;
+
+//Given
+
+Av_ol=175000;//open loop voltage gain
+Zin=1.5D6;//input impedance in ohms
+Zout=70;//output impedance in ohms
+
+//Solution
+
+Zi_vf=(1+Av_ol)*Zin;//input impedance of voltage follower in ohms
+Zo_vf=Zout/(1+Av_ol);//output impedance of voltage follower in ohms
+printf("Input impedance (Zi)VF = %.f Mega-ohms\n ",Zi_vf/10^6);
+printf("Output impedance (Zo)VF = %.4f ohms\n ",Zo_vf);
diff --git a/2882/CH14/EX14.11/Ex14_11.sce b/2882/CH14/EX14.11/Ex14_11.sce new file mode 100755 index 000000000..bc17ebe84 --- /dev/null +++ b/2882/CH14/EX14.11/Ex14_11.sce @@ -0,0 +1,18 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 14 Operational Amplifiers Pg no. 435 and 436
+clear;
+clc;
+
+//Given
+//Figure 14.21
+
+R=12D3;//resistances R1,R2,R3 in RC network in ohms
+C=0.001D-6;//capacitances C1,C2,C3 in RC network in ohms
+A=29;//gain for oscillator operation
+
+//Solution
+
+fr=1/(2*%pi*R*C*sqrt(6));//frequency of oscillations in hertz
+Rf=A*R;//feedback resistance in ohms
+printf("Frequency of oscillations fr = %.2f kHz\n ",fr/10^3);
+printf("Feedback resistance Rf = %.f kilo-ohms\n ",Rf/10^3);
diff --git a/2882/CH14/EX14.13/Ex14_13.sce b/2882/CH14/EX14.13/Ex14_13.sce new file mode 100755 index 000000000..7435f9c04 --- /dev/null +++ b/2882/CH14/EX14.13/Ex14_13.sce @@ -0,0 +1,23 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 14 Operational Amplifiers Pg no. 442
+clear;
+clc;
+
+//Given
+//Figure 14.32
+
+V1=2;V2=1;V3=0.5;V4=0.2;//input voltages in volts
+R=20D3;//input resistances R1,R2,R3,R4 in ohms
+R5=20D3;//feedback resistance in ohms
+
+//Solution
+
+A=-R5/R;//gain for each input
+disp("(a)");
+Vo=A*(V1+V2+V3+V4);//output voltage in volts
+printf("Normal output voltage Vo = %.1f Volts",Vo);
+disp("(b)");
+Vo=A*(V1+V2+V4);//output voltage in volts
+printf("For R3 open, output voltage Vo = %.1f Volts",Vo);
+disp("(c)");
+printf("If resistor R5 opens output becomes -Vsat.")
diff --git a/2882/CH14/EX14.14/Ex14_14.sce b/2882/CH14/EX14.14/Ex14_14.sce new file mode 100755 index 000000000..02d20e006 --- /dev/null +++ b/2882/CH14/EX14.14/Ex14_14.sce @@ -0,0 +1,21 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 14 Operational Amplifiers Pg no. 442 and 443
+clear;
+clc;
+
+//Given
+//Figure 14.33
+
+V1=2;V2=1;V3=5.5;V4=2.2;V5=1.1//input voltages in volts
+R=50D3;//input resistances R1,R2,R3,R4 in ohms
+R5=10D3;//feedback resistance in ohms
+
+//Solution
+
+A=-R5/R;//gain for each input
+disp("(a)");
+Vo=A*(V1+V2+V3+V4+V5);//output voltage in volts
+printf("Normal output voltage Vo = %.2f Volts",Vo);
+disp("(b)");
+Vo=A*(V1+V2+V4+V5);//output voltage in volts
+printf("For R3 open, output voltage Vo = %.2f Volts",Vo);
diff --git a/2882/CH14/EX14.2/Ex14_2.sce b/2882/CH14/EX14.2/Ex14_2.sce new file mode 100755 index 000000000..066767caa --- /dev/null +++ b/2882/CH14/EX14.2/Ex14_2.sce @@ -0,0 +1,18 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 14 Operational Amplifiers Pg no. 418
+clear;
+clc;
+
+//Given
+
+vI1=1.15;//voltage at base of transistor Q1 in volts
+vI2=0.95;//voltage at base of transistor Q2 in volts
+vO1=2;//voltage at collector of transistor Q1 in volts
+vO2=8;//voltage at collector of transistor Q2 in volts
+
+//Solution
+
+vICM=(vI1+vI2)/2;//input common mode voltage in volts
+vOCM=(vO1+vO2)/2;//output common mode voltage in volts
+printf("Input common mode voltage vICM = %.2f Volts\n ",vICM);
+printf("Output common mode voltage vOCM = %.1f Volts",vOCM);
diff --git a/2882/CH14/EX14.3/Ex14_3.sce b/2882/CH14/EX14.3/Ex14_3.sce new file mode 100755 index 000000000..693d10b64 --- /dev/null +++ b/2882/CH14/EX14.3/Ex14_3.sce @@ -0,0 +1,27 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 14 Operational Amplifiers Pg no. 418 and 419
+clear;
+clc;
+
+//Given
+
+vI1=0;//voltage at base of transistor Q1 in volts
+vI2p=5D-3;//peak voltage at base of transistor Q2 in volts
+vI2w=0.2;//frequency of vI2 in hertz
+vICM_a=0;//input common mode voltage in volts
+vOCM_a=5;//output common mode voltage in volts
+vICM_b=-2D-3;//input common mode voltage in volts
+vOCM_b=5.01;//output common mode voltage in volts
+vICM_c=2D-3;//input common mode voltage in volts
+vOCM_c=4.99;//output common mode voltage in volts
+
+//Solution
+
+dvICMp=vI2p/2;//peak input common mode voltage in volts
+dvICMw=vI2w;//input common mode frequency in hertz
+printf("vICM = %.1f sin(%.1f pi t) mV\n ",dvICMp*10^3,dvICMw*2);
+dvOCMp=(vOCM_b-vOCM_a)/vICM_b*dvICMp;//peak output common mode voltage in volts
+dvOCMw=dvICMw;//output common mode frequency in hertz
+printf("vOCM =5 V %.f sin(%.1f pi t) mV",dvOCMp*10^3,dvOCMw*2);
+
+//error in calculation of vOCM in textbook
diff --git a/2882/CH14/EX14.4/Ex14_4.sce b/2882/CH14/EX14.4/Ex14_4.sce new file mode 100755 index 000000000..1007974af --- /dev/null +++ b/2882/CH14/EX14.4/Ex14_4.sce @@ -0,0 +1,18 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 14 Operational Amplifiers Pg no. 418
+clear;
+clc;
+
+//Given
+
+vI1=[-3.3 1.9];//voltage at base of transistor Q1 at instants T1 and T2 in volts
+vI2=[-3.7 1.1];//voltage at base of transistor Q2 at instants T1 and T2 in volts
+vO1=[4.3 2.7];//voltage at collector of transistor Q1 at instants T1 and T2 in volts
+vO2=[4.5 3.1];//voltage at collector of transistor Q2 at instants T1 and T2 in volts
+
+//Solution
+
+vICM=((vI1(2)-vI1(1))+(vI2(2)-vI2(1)))/2;//input common mode voltage in volts
+vOCM=((vO1(2)-vO1(1))+(vO2(2)-vO2(1)))/2;//output common mode voltage in volts
+ACM=vOCM/vICM;//common mode gain
+printf("Common mode gain ACM = %.2f",ACM);
diff --git a/2882/CH14/EX14.5/Ex14_5.sce b/2882/CH14/EX14.5/Ex14_5.sce new file mode 100755 index 000000000..25c49d6fa --- /dev/null +++ b/2882/CH14/EX14.5/Ex14_5.sce @@ -0,0 +1,15 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 14 Operational Amplifiers Pg no. 423
+clear;
+clc;
+
+//Given
+
+Ad=15000;//differential gain
+Ac=15;//common mode gain
+
+//Solution
+
+CMRR=Ad/Ac;//common mode rejection ratio
+CMRR_dB=20*log10(CMRR);//common mode rejection ratio in dB units
+printf("(CMRR)dB = %.f dB",CMRR_dB);
diff --git a/2882/CH14/EX14.6/Ex14_6.sce b/2882/CH14/EX14.6/Ex14_6.sce new file mode 100755 index 000000000..6037d7c81 --- /dev/null +++ b/2882/CH14/EX14.6/Ex14_6.sce @@ -0,0 +1,15 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 14 Operational Amplifiers Pg no. 425 and 426
+clear;
+clc;
+
+//Given
+
+V1=-10.8;//output at time instant t1 in volts
+V2=10.8;//output at time instant t2 in volts
+t2_t1=2D-6;//time gap between t1 and t2 in seconds
+
+//Solution
+
+SR=(V2-V1)/t2_t1/10^6;//slew rate in Volts/micro-seconds
+printf("Slew Rate S.R. = %.1f V/μS",SR);
diff --git a/2882/CH14/EX14.7/Ex14_7.sce b/2882/CH14/EX14.7/Ex14_7.sce new file mode 100755 index 000000000..3210a0dec --- /dev/null +++ b/2882/CH14/EX14.7/Ex14_7.sce @@ -0,0 +1,15 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 14 Operational Amplifiers Pg no. 428 and 429
+clear;
+clc;
+
+//Given
+//Figure E 14.7
+
+Av_cl=50;//closed loop voltage gain
+Ri=2.7D3;//resistance Ri in ohms
+
+//Solution
+
+Rf=Av_cl*Ri;//feedback resistance in ohms
+printf("Feedback resistor Rf = %d kilo-ohms",Rf/10^3);
diff --git a/2882/CH14/EX14.8/Ex14_8.sce b/2882/CH14/EX14.8/Ex14_8.sce new file mode 100755 index 000000000..0d0de9c0e --- /dev/null +++ b/2882/CH14/EX14.8/Ex14_8.sce @@ -0,0 +1,21 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 14 Operational Amplifiers Pg no. 429
+clear;
+clc;
+
+//Given
+//Figure E 14.7
+
+Av_ol=200000;//open loop voltage gain
+Zin=5;//input impedance in ohms
+Zout=50;//output impedance in ohms
+Ri=2.7D3;//resistance Ri in ohms
+Rf=135D3;//feedback resistance in ohms
+
+//Solution
+
+Zin=Ri;//input impedance of amplifier in ohms
+Zout_miller=Rf*Av_ol/(1+Av_ol);//miller output impedance in ohms
+Zout_total=1/(1/Zout+1/Zout_miller);//total output impedance of amplifier in ohms
+printf("Input impedance Zin = %.1f kilo-ohms\n ",Zin/10^3);
+printf("Output impedance Zout = %.f ohms",Zout_total);
diff --git a/2882/CH14/EX14.9/Ex14_9.sce b/2882/CH14/EX14.9/Ex14_9.sce new file mode 100755 index 000000000..517588511 --- /dev/null +++ b/2882/CH14/EX14.9/Ex14_9.sce @@ -0,0 +1,22 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 14 Operational Amplifiers Pg no. 431 and 432
+clear;
+clc;
+
+//Given
+
+A=175000;//open loop voltage gain
+Zin=1.5D6;//input impedance in ohms
+Zout=70;//output impedance in ohms
+Ri=8.2D3;//resistance Ri in ohms
+Rf=180D3;//feedback resistance in ohms
+
+//Solution
+
+X=Ri/(Ri+Rf);//voltage divider ratio
+Zin_n=Zin*(1+A*X);//input impedance in ohms
+Zout_n=Zout/(1+A*X);//output impedance in ohms
+Av_cl=1/X;//closed loop voltage gain
+printf("Input impedance Zin = %.f Mega-ohms\n ",Zin_n/10^6);
+printf("Output impedance Zout = %.4f ohms\n ",Zout_n);
+printf("Closed loop voltage gain (Av)cl = %.f",Av_cl);
diff --git a/2882/CH2/EX2.1/Ex2_1.sce b/2882/CH2/EX2.1/Ex2_1.sce new file mode 100755 index 000000000..087a761f9 --- /dev/null +++ b/2882/CH2/EX2.1/Ex2_1.sce @@ -0,0 +1,23 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 2 Fundamental Concepts: Energy Bands in Solids Pg no. 49
+clear;
+clc;
+
+//Given Data
+m0=9.1D-31;//mass of electron in kg
+e=1.602D-19;//charge on a electron in Coulombs
+e0=8.854D-12;//electric permittivity of air
+h=6.625D-34;//planck's constant in Joules-sec
+n=2;//index of the Bohr orbit
+
+//Solution
+
+KE=(m0*e^4)/(8*e0^2*n^2*h^2);//Kinetic Energy of electron in Joules
+KE=KE/(1.6D-19);//Converting it into electron volts eV
+
+PE=-(m0*e^4)/(4*e0^2*n^2*h^2);//Potential Energy of electron in Joules
+PE=PE/(1.6D-19);//Converting it into electron volts eV
+
+TE=KE+PE;//Total energy is the sum of kinetic and potential energy of electron
+
+printf("Kinetic Energy=%.1f eV \n Potential Energy=%.1f eV \n Total Energy=%.1f eV",KE,PE,TE);
diff --git a/2882/CH2/EX2.2/Ex2_2.sce b/2882/CH2/EX2.2/Ex2_2.sce new file mode 100755 index 000000000..12c656f48 --- /dev/null +++ b/2882/CH2/EX2.2/Ex2_2.sce @@ -0,0 +1,16 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 2 Fundamental Concepts: Energy Bands in Solids Pg no. 49
+clear;
+clc;
+
+printf("According to Paulis principle no two electrons can possess same set of values for four quantum numbers.\n\n");
+printf("Total electrons that can reside in eacvh shell is as follows\n");
+printf("K shell: \n n=1,l=0,m=0,s=±1/2 \t\t\t 2 electrons Subshell:1s\n");
+printf("\t\t\t\t Total:2 electrons\n");
+printf("L shell: \n n=2,l=0,m=0,s=±1/2 \t\t\t 2 electrons Subshell:2s\n");
+printf(" n=2,l=1,m=-1,0,+1,s=±1/2 \t\t 6 electrons Subshell:2p\n");
+printf("\t\t\t\t Total:8 electrons\n");
+printf("M shell: \n n=3,l=0,m=0,s=±1/2 \t\t\t 2 electrons Subshell:3s\n");
+printf(" n=3,l=1,m=-1,0,+1,s=±1/2\t\t 6 electrons Subshell:3p\n");
+printf(" n=3,l=2,m=-2,-1,0,+1,+2,s=±1/2 \t 10 electrons Subshell:3d\n");
+printf("\t\t\t\t Total:18 electrons\n");
diff --git a/2882/CH2/EX2.3/Ex2_3.sce b/2882/CH2/EX2.3/Ex2_3.sce new file mode 100755 index 000000000..1c0e3da9f --- /dev/null +++ b/2882/CH2/EX2.3/Ex2_3.sce @@ -0,0 +1,33 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 2 Fundamental Concepts: Energy Bands in Solids Pg no. 50
+clear;
+clc;
+
+//Given Data
+m0=9.1D-31;//mass of electron in kg
+e=1.602D-19;//charge on a electron in Coulombs
+V1=100;//Accelerating potential difference in volts for case (i)
+V2=500;//Accelerating potential difference in volts for case (ii)
+
+//Solution
+disp('case (i)')
+
+KE1=e*V1;//Kinetic Energy of electron in Joules
+KE2=KE1/(1.6D-19);//Converting it into electron volts eV
+v=sqrt(2*KE1/m0);//Velocity of electron in meters per second
+
+printf("The Kinetic energy for V=%d volts is \n",V1);
+printf("K.E.=%.3e Joules \nK.E.=%d eV\n",KE1,KE2);
+printf("The corresponding velocity is %.2e m/sec\n",v);
+
+disp('case (ii)')
+
+KE1=e*V2;//Kinetic Energy of electron in Joules
+KE2=KE1/(1.6D-19);//Converting it into electron volts eV
+v=sqrt(2*KE1/m0);//Velocity of electron in meters per second
+
+printf("The Kinetic energy for V=%d volts is \n",V1);
+printf("K.E.=%.3e Joules \nK.E.=%d eV\n",KE1,KE2);
+printf("The corresponding velocity is %.2e m/sec\n",v);
+
+//Decimal errors with respect to textbook due to approximations
diff --git a/2882/CH2/EX2.4/Ex2_4.sce b/2882/CH2/EX2.4/Ex2_4.sce new file mode 100755 index 000000000..177ad0d7b --- /dev/null +++ b/2882/CH2/EX2.4/Ex2_4.sce @@ -0,0 +1,26 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 2 Fundamental Concepts: Energy Bands in Solids Pg no. 50
+clear;
+clc;
+
+//Given Data
+m0=9.1D-31;//mass of electron in kg
+e=1.602D-19;//charge on a electron in Coulombs
+V=5000;//Accelerating potential difference in volts for case (ii)
+m=3674*m0;//mass of positively charged particle in kg;
+q=2*e;//charge of positively charged particle in Coulombs;
+
+
+//Solution
+
+
+KE1=q*V;//Kinetic Energy of positively charged particle in Joules
+KE2=KE1/(1.6D-19);//Converting it into electron volts eV
+
+v=sqrt(2*KE1/m);//Velocity of positively charged particle in meters per second
+v=v/1000;//Converting it into kilometers per second
+
+printf("The Kinetic energy is %d eV\n",KE2);
+printf("The corresponding velocity is %d km/sec\n",v);
+
+//Error in kinetic energy due to approximations of decimals in textbook
diff --git a/2882/CH2/EX2.5/Ex2_5.sce b/2882/CH2/EX2.5/Ex2_5.sce new file mode 100755 index 000000000..49282c9e1 --- /dev/null +++ b/2882/CH2/EX2.5/Ex2_5.sce @@ -0,0 +1,14 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 2 Fundamental Concepts: Energy Bands in Solids Pg no. 50 and 51
+clear;
+clc;
+
+//Given Data
+m0=9.1D-31;//mass of electron in kg
+v_to_c_ratio=0.2;
+
+//Solution
+
+m=m0/sqrt(1-v_to_c_ratio^2);//mass of electron in kg
+
+printf("Mass of electron for v=0.2c is equal to m=%.2e kg",m);
diff --git a/2882/CH2/EX2.6/Ex2_6.sce b/2882/CH2/EX2.6/Ex2_6.sce new file mode 100755 index 000000000..3a9c16539 --- /dev/null +++ b/2882/CH2/EX2.6/Ex2_6.sce @@ -0,0 +1,35 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 2 Fundamental Concepts: Energy Bands in Solids Pg no. 51
+clear;
+clc;
+
+//Given Data
+
+n=2;//orbit for Balmer series
+h=6.625D-34;//planck's constant in Joules-sec
+c=3D8;//speed of light in meter per second
+
+//Solution
+
+for k=3:6
+ hf=-13.6*(1/(k^2)-1/(2^2));//radiated energy in eV
+ hf2=hf*1.6D-19;//converting from eV to Joules
+ f=hf2/h;//frequency of emitted radiation in Hz
+ l=c/f;//wavelength of emitted radiation in meters
+ u=l*10^6;//converting wavelength into micro meter
+ A=l*10^10;//converting wavelength into angstroms
+
+ printf("n=%d,hf%d2=%.2f eV,λ=%.3f μm = %d Å \n",k,k,hf,u,A);
+end
+
+hf=-13.6*(0-1/(2^2));//as k tends to infinity 1/k tends to zero
+hf2=hf*1.6D-19;//converting from eV to Joules
+f=hf2/h;//frequency of emitted radiation in Hz
+l=c/f;//wavelength of emitted radiation in meters
+u=l*10^6;//converting wavelength into micro meter
+A=l*10^10;//converting wavelength into angstroms
+
+ printf("n=∞ ,hf∞2=%.2f eV,λ=%.3f μm = %d Å \n",hf,u,A);
+
+
+//Errors with respect to book due to decimal approximations
diff --git a/2882/CH3/EX3.1/Ex3_1.sce b/2882/CH3/EX3.1/Ex3_1.sce new file mode 100755 index 000000000..1bf7ccb68 --- /dev/null +++ b/2882/CH3/EX3.1/Ex3_1.sce @@ -0,0 +1,20 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 71
+clear;
+clc;
+
+//Given Data
+
+//Figure 3.14
+e1=4;//Relative emf of primary side
+e2=1;//Relative emf of secondary side
+vinp=220;//Input peak voltage in volts
+Vd=0.7;//Forward voltage drop of diode
+
+//Solution
+
+tr=e2/e1;//turns ratio n2/n1
+V2=tr*vinp;//as v2/v1=n2/n1
+Voutp=V2-Vd;//Vout across Rl in volts
+
+printf("The peak value of rectified output voltage is:\n(Vout)peak=%.1f V",Voutp);
diff --git a/2882/CH3/EX3.10/Ex3_10.sce b/2882/CH3/EX3.10/Ex3_10.sce new file mode 100755 index 000000000..d0b13dd12 --- /dev/null +++ b/2882/CH3/EX3.10/Ex3_10.sce @@ -0,0 +1,19 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 95
+clear;
+clc;
+
+//Given Data
+
+Pz=0.5;//power dissipation of zener diode in watts
+Vz=12;//zener breakdown voltage in volts
+Tr=25;//reference temperature in degree celsius
+T=90;//given temperature in degree celcius
+Tc=0.075/100;//Temperature co-efficient in degree celcius inverse
+
+//Solution
+
+dVz=Vz*Tc*(T-Tr);//Change in Vz in volts
+Vz90=Vz+dVz;//Zener voltage at T=90 degree celsius
+
+printf("The value of Vz at T=90° C Vz=%.2f Volts",Vz90);
diff --git a/2882/CH3/EX3.11/Ex3_11.sce b/2882/CH3/EX3.11/Ex3_11.sce new file mode 100755 index 000000000..08088a683 --- /dev/null +++ b/2882/CH3/EX3.11/Ex3_11.sce @@ -0,0 +1,24 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 96
+clear;
+clc;
+
+//Given Data
+//From Figure 3.27
+
+V=15;//value of voltage source in volts
+Vz=12;//zener breakdown voltage in volts
+R=390;//series resistance in ohms
+Izmax=10;//maximum zener current in milli-amperes
+
+//Solution
+
+//Assuming ideal diode Vz=12V and Rz=0 ohms
+Vr=V-Vz;//voltage across resistor in volts
+Iz=Vr/R*1000;//current through circuit in milli-amperes
+printf("Iz max=%d mA\n Iz=%.2f mA\n",Izmax,Iz);
+
+if Iz<Izmax then
+ printf("The diode is properly biased.");
+else printf("The diode is not properly biased.");
+end
diff --git a/2882/CH3/EX3.12/Ex3_12.sce b/2882/CH3/EX3.12/Ex3_12.sce new file mode 100755 index 000000000..6266f96a3 --- /dev/null +++ b/2882/CH3/EX3.12/Ex3_12.sce @@ -0,0 +1,28 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 96
+clear;
+clc;
+
+//Given Data
+//From Figure 3.27
+
+V=15;//value of voltage source in volts
+Vz=12;//zener breakdown voltage in volts
+R=390;//series resistance in ohms
+rz=10;//diode resistance in ohms
+Izmax=10;//maximum zener current in milli-amperes
+
+//Solution
+
+//Assuming ideal diode Vz=12V and Rz=0 ohms
+Vr=V-Vz;//voltage across resistor in volts
+Iz=Vr/(R+rz)*1000;//current through circuit in milli-amperes
+
+if Iz<Izmax then
+ printf("The diode is properly biased.\n");
+else printf("The diode is not biased properly.\n");
+end
+
+Pz=Vz*Iz;//power dissipation in milli-watts
+
+printf("The dissipated power = Pz = %d mW",Pz);
diff --git a/2882/CH3/EX3.13/Ex3_13.sce b/2882/CH3/EX3.13/Ex3_13.sce new file mode 100755 index 000000000..3fa7b87b0 --- /dev/null +++ b/2882/CH3/EX3.13/Ex3_13.sce @@ -0,0 +1,31 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 97
+clear;
+clc;
+
+//Given Data
+//From Figure 3.28
+
+V=15;//value of voltage source in volts
+Vz=10;//zener breakdown voltage in volts
+Rs=300;//series resistance R in ohms
+Rp=900;//shunt resistance R' in ohms
+Izmax=10;//maximum zener current in milli-amperes
+
+//Solution
+
+//Assuming ideal diode Vz=12V and Rz=0 ohms
+Vrs=V-Vz;//voltage across resistor in volts
+Irs=Vrs/Rs*1000;//current through resistor R in milli-amperes
+Irp=Vz/Rp*1000;//current through resistor R' in milli-amperes
+
+Iz=Irs-Irp;//current through diode in milli-amperes
+
+if Iz<Izmax then
+ printf("The diode is properly biased.\n");
+else printf("The diode is not biased properly.\n");
+end
+
+Pd=Vz*Iz;//power dissipation in milli-watts
+
+printf("The dissipated power = Pd = %.1f mW",Pd);
diff --git a/2882/CH3/EX3.14/Ex3_14.sce b/2882/CH3/EX3.14/Ex3_14.sce new file mode 100755 index 000000000..84d89ac05 --- /dev/null +++ b/2882/CH3/EX3.14/Ex3_14.sce @@ -0,0 +1,21 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 97 and 98
+clear;
+clc;
+
+//Given Data
+
+Vin=18;//input voltage in volts
+Vz=10;//zener breakdown voltage in volts
+Tr=20;//reference temperature in degree celsius
+T=40;//given temperature in degree celcius
+Tc=0.075/100;//Temperature co-efficient in degree celcius inverse
+R=150;//value of resistor in ohms
+
+//Solution
+
+dVz=Vz*Tc*(T-Tr);//Change in Vz in volts
+Vz40=Vz+dVz;//Zener voltage at T=40 degree celsius
+Vr=Vin-Vz40;//voltage drop across resistor
+
+printf("The output voltage Vo = Vr =%.2f Volts",Vr);
diff --git a/2882/CH3/EX3.15/Ex3_15.sce b/2882/CH3/EX3.15/Ex3_15.sce new file mode 100755 index 000000000..a20030d7b --- /dev/null +++ b/2882/CH3/EX3.15/Ex3_15.sce @@ -0,0 +1,39 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 99 and 100
+clear;
+clc;
+
+//Given Data
+
+Vin1=50;//input voltage in volts
+Vin2=75;//input voltage in volts
+Vz=15;//zener breakdown voltage in volts
+Pmax=1;//diode maximum power dissipation in watts
+R=3.9D3;//value of resistor in ohms
+Rload=3D3;//value of load resistance in ohms
+
+//Solution
+//With reference to Figure 3.32
+disp("Case (a)");
+disp("Vin=50V");
+Vbc=Vz;//voltage across diode in volts
+Vab=Vin1-Vbc;//voltage across resiston in volts
+I=Vab/R*1000;//battery current in milli-amperes
+Iload=Vbc/Rload*1000;//current through load in milli-amperes
+Iz=I-Iload;//current through diode in milli-amperes
+Izmax=Pmax/Vz*1000;//maximum current through diode in milli-amperes
+
+printf("\n Battery current I = %.2f mA\n Zenner current Iz = %.2f mA\n Load current Iload = %d mA",I,Iz,Iload)
+
+disp("Case (b)");
+disp("Vin=75V");
+Vbc=Vz;//voltage across diode in volts
+Vab=Vin2-Vbc;//voltage across resiston in volts
+I=Vab/R*1000;//battery current in milli-amperes
+Iload=Vbc/Rload*1000;//current through load in milli-amperes
+Iz=I-Iload;//current through diode in milli-amperes
+Izmax=Pmax/Vz*1000;//maximum current through diode in milli-amperes
+
+printf("\n Battery current I = %.2f mA\n Zenner current Iz = %.2f mA\n Load current Iload = %d mA",I,Iz,Iload)
+
+printf("\n\n Load current remains constant for any voltage input.");
diff --git a/2882/CH3/EX3.16/Ex3_16.sce b/2882/CH3/EX3.16/Ex3_16.sce new file mode 100755 index 000000000..b57980beb --- /dev/null +++ b/2882/CH3/EX3.16/Ex3_16.sce @@ -0,0 +1,48 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 100
+clear;
+clc;
+
+//Given Data
+
+Vin=50;//input voltage in volts
+Vz=30;//zener breakdown voltage in volts
+R=2D3;//value of resistor in ohms
+
+//Solution
+//With reference to Figure 3.32
+
+disp("Case (i)");
+disp("Rload=30 kohm");
+Rload=30D3;//load resistance in ohms
+Vbc=Vz;//voltage across diode in volts
+Vab=Vin-Vbc;//voltage across resiston in volts
+I=Vab/R*1000;//battery current in milli-amperes
+Iload=Vbc/Rload*1000;//current through load in milli-amperes
+Iz=I-Iload;//current through diode in milli-amperes
+
+printf("\n Zenner current Iz = %d mA\n",Iz)
+
+disp("Case (ii)");
+disp("Rload=10 kohm");
+Rload=10D3;//load resistance in ohms
+Vbc=Vz;//voltage across diode in volts
+Vab=Vin-Vbc;//voltage across resiston in volts
+I=Vab/R*1000;//battery current in milli-amperes
+Iload=Vbc/Rload*1000;//current through load in milli-amperes
+Iz=I-Iload;//current through diode in milli-amperes
+
+printf("\n Zenner current Iz = %d mA\n",Iz)
+
+disp("Case (iii)");
+disp("Rload=3 kohm");
+Rload=3D3;//load resistance in ohms
+Vbc=Vz;//voltage across diode in volts
+Vab=Vin-Vbc;//voltage across resiston in volts
+I=Vab/R*1000;//battery current in milli-amperes
+Iload=Vbc/Rload*1000;//current through load in milli-amperes
+Iz=I-Iload;//current through diode in milli-amperes
+
+printf("\n Zenner current Iz = %d mA\n",Iz)
+
+printf("\n Since Iz=0 the diode will come out of breakdown region\n and diode will no longer act as a voltage regulator.");
diff --git a/2882/CH3/EX3.17/Ex3_17.sce b/2882/CH3/EX3.17/Ex3_17.sce new file mode 100755 index 000000000..39cbdd3b7 --- /dev/null +++ b/2882/CH3/EX3.17/Ex3_17.sce @@ -0,0 +1,24 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 101
+clear;
+clc;
+
+//Given Data
+
+Vin1=24;//value of voltage source in volts
+Vin2=20;//value of voltage source in volts
+Vz=12;//zener breakdown voltage in volts
+Izmax=20;//maximum zener current in milli-amperes
+
+//Solution
+
+disp("Vin=24V");
+R=(Vin1-Vz)/Izmax*1000;//series resistance required for maximum safe current in ohms
+
+printf("The minimum value of resistor required R=%d ohms.",R);
+printf("Using R=680 ohms i.e. standaed value.")
+R=680;//standard value of resistor selected
+disp("Vin=20V");
+Iz=(Vin2-Vz)/R*1000;//value of zener current in milli-amperes
+
+printf("Current level at Vin=20V is Iz=%.1f mA",Iz);
diff --git a/2882/CH3/EX3.18/Ex3_18.sce b/2882/CH3/EX3.18/Ex3_18.sce new file mode 100755 index 000000000..efa6f18cb --- /dev/null +++ b/2882/CH3/EX3.18/Ex3_18.sce @@ -0,0 +1,22 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 101 and 102
+clear;
+clc;
+
+//Given Data
+
+Vin=20;//supply input voltage in volts
+Vz=9.1;//zener breakdown voltage in volts
+Pmax=400D-3;//diode maximum power dissipation in watts
+Izmin=5;//minimum current for diode to be in breakdown region in milli-amperes
+
+//Solution
+
+Izmax=Pmax/Vz;//maximum safe current through diode in milli-amperes
+R=(Vin-Vz)/Izmax;
+
+printf("Optimum value of resistor R=%.2f ohms.\n",R);
+printf(" Standard value is 270 ohms.\n");
+
+Iloadmax=Izmax*1000-Izmin;//maximum load current in milli-amperes
+printf("Maximum load current in the circuit Iload max=%.2f mA",Iloadmax)
diff --git a/2882/CH3/EX3.19/Ex3_19.sce b/2882/CH3/EX3.19/Ex3_19.sce new file mode 100755 index 000000000..f5d51a842 --- /dev/null +++ b/2882/CH3/EX3.19/Ex3_19.sce @@ -0,0 +1,20 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 102
+clear;
+clc;
+
+//Given Data
+
+Vz=18;//zener breakdown voltage in volts
+Izmax=60;//maximum safe current through diode in milli-amperes
+R=150;//series resistance in ohms
+Rl=1D3;//load resistance in ohms
+
+//Solution
+
+Vinmin=((Rl+R)/Rl)*Vz;//minimum value of input voltage
+Iload=Vz/Rl*1000;//load current in milli-amperes
+Imax=Izmax+Iload;//maximum current through battery in milli-amperes
+Vinmax=Vz+Imax/1000*R;//maximum value of input voltage
+
+printf("So the input voltage ranges from %.1f volts to %.1f volts",Vinmin,Vinmax);
diff --git a/2882/CH3/EX3.2/Ex3_2.sce b/2882/CH3/EX3.2/Ex3_2.sce new file mode 100755 index 000000000..969573e91 --- /dev/null +++ b/2882/CH3/EX3.2/Ex3_2.sce @@ -0,0 +1,39 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 89
+clear;
+clc;
+
+//Given Data
+
+r=1.0;//Diode resistance in ohms
+Rl=100;//Load resistance in ohms
+Ep=30;//Input supply voltage in volts peak
+
+//Solution
+
+disp("(a)");
+Ip=Ep/(Rl+r)*1000;//peak current in milli-amperes
+Irms=Ip/sqrt(2);//rms current in milli-amperes
+Iavg=Ip/%pi;//average or d.c. value of current in in milli-amperes
+
+printf("The peak value of current = Ip=%d mA\n",Ip);
+printf("The rms value of current = Irms=%.1f mA\n",Irms);
+printf("The average or d.c. value of current = Iav=%.1f mA\n",Iavg);
+
+disp("(b)");
+Pdc=(Iavg/1000)^2*Rl//d.c. output power in watts
+
+printf("The d.c. output power = Pdc=%.3f watts\n",Pdc);
+
+disp("(c)");
+Pac=(Irms/1000)^2*(Rl+r);//input ac power in watts
+
+printf("The a.c. input power = Pin=%.2f watts\n",Pac);
+
+disp("(d)");
+n=Pdc/Pac;//Rectification efficiency is output dc power over input ac power
+
+printf("Rectification efficiency= %d percentage",n*100);
+
+
+//Error in textbook as Irms=Ip/sqrt(2) and not Ip/2
diff --git a/2882/CH3/EX3.20/Ex3_20.sce b/2882/CH3/EX3.20/Ex3_20.sce new file mode 100755 index 000000000..be948042e --- /dev/null +++ b/2882/CH3/EX3.20/Ex3_20.sce @@ -0,0 +1,19 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 119 and 120
+clear;
+clc;
+
+//Given Data
+
+Irelay=10;//relay current in milli-amperes
+Int=400//light intensity in lm/m^2
+Rc_d=100D3;//cell resistance in ohms when it is dark
+Rc_i=1200;//cell resistance in ohms when illumination is 500lm/m^2
+V=30;//source voltage in volts
+
+//Solution
+
+R=V/Irelay*1000-Rc_i;//series resistance in ohms
+Id=V/(R+Rc_d)*1000;//dark current in milli-amperes
+
+printf("Series resistance R = %d ohms\n Dark current = %.3f mA ",R,Id)
diff --git a/2882/CH3/EX3.3/Ex3_3.sce b/2882/CH3/EX3.3/Ex3_3.sce new file mode 100755 index 000000000..1d4256d25 --- /dev/null +++ b/2882/CH3/EX3.3/Ex3_3.sce @@ -0,0 +1,43 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 89
+clear;
+clc;
+
+//Given Data
+
+Rl=470;//Load resistance in ohms
+r=2;//Diodes dynamic resistance in ohms
+esp=50;//Input signal voltage magnitude in volts peak
+esf=314/(2*%pi);//Input signal frequncy in hertz
+
+//Solution
+
+disp("(a)");
+Ep=esp*sqrt(2);//peak voltage in volts
+Ip=Ep/(Rl+r)*1000;//peak current in amperes
+
+printf("The peak value of current = Ip=%.1f mA\n",Ip*1000);
+
+disp("(b)");
+Iavg=2*Ip/%pi;//average or d.c. value of current in in milli-amperes
+
+printf("The average or d.c. value of current = Iav=%.2f mA\n",Iavg);
+
+disp("(c)");
+Irms=Ip/sqrt(2);//rms current in milli-amperes
+
+printf("The rms value of current = Irms=%.2f mA\n",Irms);
+
+disp("(d)");
+RF=sqrt((Irms/Iavg)^2-1);//ripple factor
+
+printf("The ripple factor = RF=%.4f\n",RF);
+
+disp("(e)");
+Pdc=(Iavg/1000)^2*Rl//d.c. output power in watts
+Pac=(Irms/1000)^2*(Rl+r);//input ac power in watts
+n=Pdc/Pac;//Rectification efficiency is output dc power over input ac power
+
+printf("Rectification efficiency= %.2f percentage",n*100);
+
+//Efficiency calculation error in textbook and also decimal errors due to approximations
diff --git a/2882/CH3/EX3.4/Ex3_4.sce b/2882/CH3/EX3.4/Ex3_4.sce new file mode 100755 index 000000000..1d6c81a92 --- /dev/null +++ b/2882/CH3/EX3.4/Ex3_4.sce @@ -0,0 +1,22 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 90
+clear;
+clc;
+
+//Given Data
+
+Rl=2D3;//Load resistance in ohms
+esp=50;//Input signal voltage magnitude in volts peak
+esf=314/(2*%pi);//Input signal frequncy in hertz
+Vr_to_Vdc=6/100;//Ratio of peak to peak ripple voltage to d.c. output voltage
+
+//Solution
+
+//Using figure E3.4
+//From right angled triangle pqr
+
+C=1/(esf*Rl*Vr_to_Vdc)*10^6;//Capacitance in micro faraday;
+
+printf("The size of filter capacitor is C = %.1f μF",C);
+
+//Decimal errors in textbook due to approximations
diff --git a/2882/CH3/EX3.5/Ex3_5.sce b/2882/CH3/EX3.5/Ex3_5.sce new file mode 100755 index 000000000..818c0ff11 --- /dev/null +++ b/2882/CH3/EX3.5/Ex3_5.sce @@ -0,0 +1,17 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 90 and 91
+clear;
+clc;
+
+//Given Data
+//Taken as in Example 3.4
+esp=50;//Input signal voltage magnitude in volts peak
+esf=314/(2*%pi);//Input signal frequncy in hertz
+Vr_to_Vdc=6/100;//Ratio of peak to peak ripple voltage to d.c. output voltage
+
+//Solution
+
+//Using figure E3.5
+
+e0av=esp*(1-Vr_to_Vdc/2);//average value of d.c. output voltage in volts
+printf("The average value of d.c. output voltage e0av = %.1f Volts",e0av);
diff --git a/2882/CH3/EX3.6/Ex3_6.sce b/2882/CH3/EX3.6/Ex3_6.sce new file mode 100755 index 000000000..cfe7ba6ad --- /dev/null +++ b/2882/CH3/EX3.6/Ex3_6.sce @@ -0,0 +1,21 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 91
+clear;
+clc;
+
+//Given Data
+
+Rl=1D3;//Load resistance in ohms
+esf=50;//Input signal frequncy in hertz
+RF=4/100;//Ripple Factor
+
+//Solution
+
+//Using figure E3.6
+//From right angled triangle pqr
+
+C=1/(esf*Rl*2*RF)*10^6;//Capacitance in micro faraday;
+
+printf("The size of filter capacitor is C = %d μF",C);
+
+//Error in textbook as ripple factor is already given and capacitance is calculated
diff --git a/2882/CH3/EX3.7/Ex3_7.sce b/2882/CH3/EX3.7/Ex3_7.sce new file mode 100755 index 000000000..8a28756c6 --- /dev/null +++ b/2882/CH3/EX3.7/Ex3_7.sce @@ -0,0 +1,16 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 91
+clear;
+clc;
+
+//Given Data
+
+Rl=200;//Load resistance in ohms
+esf=50;//Input signal frequncy in hertz
+RF=5/100;//Ripple Factor
+
+//Solution
+
+C=1/(esf*Rl*2*RF)*10^6;//Capacitance in micro faraday;
+
+printf("The size of shunt capacitor is C = %d μF",C);
diff --git a/2882/CH3/EX3.8/Ex3_8.sce b/2882/CH3/EX3.8/Ex3_8.sce new file mode 100755 index 000000000..18a298bde --- /dev/null +++ b/2882/CH3/EX3.8/Ex3_8.sce @@ -0,0 +1,24 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 91 and 92
+clear;
+clc;
+
+//Given Data
+
+Rl=220;//Load resistance in ohms
+r=4;//Diodes dynamic resistance in ohms
+esp=50*sqrt(2);//Input signal voltage magnitude in volts peak
+esf=314/(2*%pi);//Input signal frequncy in hertz
+Vdc=30;//output dc voltage in volts
+
+//Solution
+
+ne0dc=2*esp/%pi;//output dc voltage multiplied by turns ratio
+i0dc=30/(2/%pi)/220;//output dc current
+Vd=r*i0dc;//voltage across conducting diode
+eout=i0dc*Rl;//output voltage across Rl
+e0dc=(eout+Vd)*2/%pi;//output dc voltage of transformer
+n=ne0dc/e0dc;//transformer ratio
+printf("The transformer turns ratio = n = %.3f",n);
+
+//Error in decimal places in textbook due to approximations
diff --git a/2882/CH3/EX3.9/Ex3_9.sce b/2882/CH3/EX3.9/Ex3_9.sce new file mode 100755 index 000000000..12cbe8925 --- /dev/null +++ b/2882/CH3/EX3.9/Ex3_9.sce @@ -0,0 +1,33 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 3 Semiconductor Diodes and Miscellaneous Devices Pg no. 92 and 93
+clear;
+clc;
+
+//Given Data
+
+Rl=1500;//Load resistance in ohms
+Rf=10;//Diodes dynamic resistance in ohms
+esp=110*sqrt(2);//Input signal voltage magnitude in volts peak
+esf=314/(2*%pi);//Input signal frequncy in hertz
+
+//Solution
+
+disp("(a)");
+Ip=esp/(Rl+2*Rf)*1000;//peak output current in milli-ampere
+I0av=2*Ip/%pi;//average value of output current in milli-ampere
+E0av=I0av*Rl/1000;//DC load voltage in volts
+
+printf("DC load voltage (E0)dc = %.2f Volts",E0av);
+
+disp("(b)");
+I0rms=Ip/sqrt(2);//rms output current in milli-ampere
+Vr=sqrt((I0rms/1000)^2-(I0av/1000)^2)*Rl;//output ripple voltage in volts
+
+printf("Output ripple voltage Vr = %.1f Volts",Vr);
+
+disp("(c)");
+pr=2*Rf/Rl*100;//Percentage Regulation of voltage
+
+printf("The percentage regulation is = %.2f percentage",pr);
+
+//Error in textbook in calculation of average current
diff --git a/2882/CH4/EX4.1/Ex4_1.sce b/2882/CH4/EX4.1/Ex4_1.sce new file mode 100755 index 000000000..ca631b896 --- /dev/null +++ b/2882/CH4/EX4.1/Ex4_1.sce @@ -0,0 +1,18 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 4 Bipolar Junction transistors Pg no. 131
+clear;
+clc;
+
+//Given Data
+
+IB=40D-6;//base current in amperes
+IC=4.25D-3;//collector current in amperes
+
+//Solution
+
+Bdc=IC/IB;//value of dc CE current gain
+Adc=Bdc/(Bdc+1);//value of dc CB current gain
+
+printf("The value of βdc = %.2f and αdc = %.4f",Bdc,Adc);
+
+//Error in decimal places due to approximations in textbook
diff --git a/2882/CH4/EX4.2/Ex4_2.sce b/2882/CH4/EX4.2/Ex4_2.sce new file mode 100755 index 000000000..9f8794608 --- /dev/null +++ b/2882/CH4/EX4.2/Ex4_2.sce @@ -0,0 +1,18 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 4 Bipolar Junction transistors Pg no. 131
+clear;
+clc;
+
+//Given Data
+
+Bdc=175;//value of dc CE current gain
+IB=40D-6;//base current in amperes
+
+//Solution
+
+IC=IB*Bdc*1000;//collector current in milli-amperes
+Adc=Bdc/(Bdc+1);//value of dc CB current gain
+
+printf("The value of IC = %d mA and αdc = %.4f",IC,Adc);
+
+//Error in decimal places due to approximations in textbook
diff --git a/2882/CH4/EX4.3/Ex4_3.sce b/2882/CH4/EX4.3/Ex4_3.sce new file mode 100755 index 000000000..0c23087ca --- /dev/null +++ b/2882/CH4/EX4.3/Ex4_3.sce @@ -0,0 +1,20 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 4 Bipolar Junction transistors Pg no. 131
+clear;
+clc;
+
+//Given Data
+
+IC=7.5D-3;//collector current in amperes
+Adc=0.9914;//value of dc CB current gain
+
+//Solution
+
+IE=IC/Adc;//emitter current in amperes
+IB=IE-IC;//base current in amperes
+IB=IB*10^6;//converting base current to mICro-amperes
+Bdc=Adc/(1-Adc);//value of dc CE current gain
+
+printf("The value of IB = %d μA and βdc = %.2f",IB,Bdc);
+
+//Error in decimal places due to approximations in textbook
diff --git a/2882/CH4/EX4.4/Ex4_4.sce b/2882/CH4/EX4.4/Ex4_4.sce new file mode 100755 index 000000000..51f1dd4ee --- /dev/null +++ b/2882/CH4/EX4.4/Ex4_4.sce @@ -0,0 +1,30 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 4 Bipolar Junction transistors Pg no. 133
+clear;
+clc;
+
+//Given Data
+
+VCEsat=0.25;//VCEsat in volts
+VBB=4.5;//base driving source in volts
+RB=20;//base resistance in kilo-ohms
+RC=680;//collector resistance in ohms
+VCC=9;//collector driving source in volts
+VBE=0.7;//forward drop of emitter diode
+Bdc=100;//dc current gain for CE configuration
+
+//Solution
+//Figure 4.12
+
+ICsat=(VCC-VCEsat)/RC*1000;//value of collector saturation current in milli-amperes
+printf("IC(sat)=%.2f mA\n\n",ICsat);
+IB=(VBB-VBE)/RB;//value of base current in milli-amperes
+printf("IB=%.2f mA\n\n",IB);
+IC=Bdc*IB;//collector current for given IB in milli-amperes
+printf("IC=%d mA\n\n",IC);
+
+if IC>ICsat then
+ printf("Since IC(calculated) = %d mA is greater than IC(sat),\nthe transistor is in saturation.\nThe collector current of %d mA is never reached.\nIf you increase IB further,\nthe collector current is at the saturation value.",IC,IC);
+end
+
+//Error of 0.01 mA in textbook in the calculation of IC(sat)
diff --git a/2882/CH4/EX4.5/Ex4_5.sce b/2882/CH4/EX4.5/Ex4_5.sce new file mode 100755 index 000000000..1baa7e74c --- /dev/null +++ b/2882/CH4/EX4.5/Ex4_5.sce @@ -0,0 +1,27 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 4 Bipolar Junction transistors Pg no. 133 and 134
+clear;
+clc;
+
+//Given Data
+
+Bdc=50;//dc current gain for CE configuration
+VBB=3;//base driving source in volts
+RB=15;//base resistance in kilo-ohms
+RC=1;//collector resistance in kilo-ohms
+VCC=12;//collector driving source in volts
+VCEsat=0.25;//VCEsat in volts
+VBE=0.7;//forward drop of emitter diode
+
+
+//Solution
+
+ICsat=(VCC-VCEsat)/RC;//value of collector saturation current in milli-amperes
+IB=(VBB-VBE)/RB;//value of base current in milli-amperes
+IC=Bdc*IB;//collector current for given IB in milli-amperes
+
+if IC>ICsat then
+ printf("The transistor is in saturation and VCE=VCEsat=%.2f Volts",VCEsat);
+else
+ printf("The transistor is not in saturation and VCE=VCC-IC*Rc = %.2fVolts",(VCC-IC*RC));
+end
diff --git a/2882/CH4/EX4.6/Ex4_6.sce b/2882/CH4/EX4.6/Ex4_6.sce new file mode 100755 index 000000000..50fa7ac77 --- /dev/null +++ b/2882/CH4/EX4.6/Ex4_6.sce @@ -0,0 +1,18 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 4 Bipolar Junction transistors Pg no. 135
+clear;
+clc;
+
+//Given Data
+
+Vin=50D-3;//rms value of input ac voltage in volts
+Rl=1D3;//load resistance in ohms
+re=40;//emitter diode resistance in ohms
+
+//Solution
+//Figure 4.16
+
+Gv=Rl/re;//voltage gain
+Vout=Gv*Vin;//output voltage in volts
+
+printf("Voltage Gain Gv = %d and Output Voltage Vout = %.2f Vrms(Volts).",Gv,Vout);
diff --git a/2882/CH4/EX4.7/Ex4_7.sce b/2882/CH4/EX4.7/Ex4_7.sce new file mode 100755 index 000000000..07aa64fb1 --- /dev/null +++ b/2882/CH4/EX4.7/Ex4_7.sce @@ -0,0 +1,32 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 4 Bipolar Junction transistors Pg no. 139
+clear;
+clc;
+
+//Given Data
+
+IE=2D-3;//emitter current in amperes
+A=0.97;//dc current gain of CB configuration
+Vi=1D-3;//rms value of input ac voltage in volts
+Rl=500;//load resistance in ohms
+VT=26D-3;//temperature equivalent voltage of pn junction
+
+//Solution
+
+disp("(a)");
+re=VT/IE;//emitter diode resistance in ohms
+Zi=re;//input impedance in ohms
+printf("Input impedance of CB circuit = re = %d ohms\n",Zi);
+
+disp("(b)");
+Ii=Vi/Zi;//input current in amperes
+Vo=A*Ii*Rl;//output voltage in volts
+Gv=Vo/Vi;//voltage gain
+
+printf("Voltage gain of CB circuit Gv = %.1f\n",Gv);
+
+disp("(c)");
+//as output cicuit contains reverse biased junction output impedance is infinite
+Gi=-A;//current gain
+
+printf("Output impedance Zo=∞ and Current Gain Gi = %.2f",Gi);
diff --git a/2882/CH4/EX4.8/Ex4_8.sce b/2882/CH4/EX4.8/Ex4_8.sce new file mode 100755 index 000000000..e23728209 --- /dev/null +++ b/2882/CH4/EX4.8/Ex4_8.sce @@ -0,0 +1,31 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 4 Bipolar Junction transistors Pg no. 139
+clear;
+clc;
+
+//Given Data
+
+B=140;//dc current gain of CE configuration
+IE=2D-3;//emitter current in amperes
+Rl1=2D3;//load resistance in ohms
+Rl2=1.2D3;//load resistance in ohms
+VT=26D-3;//temperature equivalent voltage of pn junction
+
+//Solution
+
+disp("(a)");
+re=VT/IE;//emitter diode resistance in ohms
+Zi=B*re;//input impedance in ohms
+printf("Input impedance of CE circuit = re = %d ohms\n",Zi);
+
+disp("(b)");
+Gv=-Rl1/re;//voltage gain
+
+printf("Voltage gain of CE circuit at 2k-ohm load = Gv = %.1f\n",Gv);
+
+disp("(c)");
+Gi=B;//current gain
+
+printf("Current Gain Gi = %d",Gi);
+
+//Error in voltage gain in part (b) as Rl is mistaken as 1.2 kilo-ohm instead of 2 kilo-ohm
diff --git a/2882/CH4/EX4.9/Ex4_9.sce b/2882/CH4/EX4.9/Ex4_9.sce new file mode 100755 index 000000000..50da96279 --- /dev/null +++ b/2882/CH4/EX4.9/Ex4_9.sce @@ -0,0 +1,31 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 4 Bipolar Junction transistors Pg no. 141 and 142
+clear;
+clc;
+
+//Given Data
+
+hfe=120;//forward transfer current ratio of CE configuration
+hoe=20D-6;//output conductance of CE configuration in siemens
+hohfe=1D-6;//output conductance of Chfe configuration in siemens
+IE=2D-3;//emitter current in amperes
+VT=26D-3;//temperature equivalent voltage of pn junction
+
+//Solution
+
+disp("(a)");
+re=VT/IE;//emitter diode resistance in ohms
+hi=hfe*re/1000;//input impedance in kilo-ohms
+ro=1/hoe/1000;//output impedance in kilo-ohms
+printf("hi = %.2f kilo-ohms\nro = %d kilo-ohms\nValue of current source is %d*Ib",hi,ro,hfe);
+//output circuit is given as Figure 4.24
+
+disp("(b)");
+hi=re;//input impedance in ohms
+A=hfe/(hfe+1);//current gain alpha of Chfe circuit
+A=round(A);//taking approximate value
+ro=1/hohfe/10^6;//output impedance in mega-ohms
+printf("hi = %d ohms\nro = %d mega-ohms\nValue of current source is %d*Ib",hi,ro,A);
+//output circuit is given as Figure 4.25
+
+//Error in decimal places due to approximations in textbook
diff --git a/2882/CH5/EX5.1/Ex5_1.sce b/2882/CH5/EX5.1/Ex5_1.sce new file mode 100755 index 000000000..7269146ac --- /dev/null +++ b/2882/CH5/EX5.1/Ex5_1.sce @@ -0,0 +1,41 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 147
+clear;
+clc;
+
+//Given Data
+//Figure 5.4
+
+B=100;//current gain of CE configuration
+VCC=15;//biasing voltage in volts
+R=180D3;//biasing resistance in ohms
+Rl=1.5D3;//load resistance in ohms
+VBE=0.7;//forward drop of emitter diode in volts
+
+//Solution
+
+disp("(i)");
+IB=(VCC-VBE)/R*10^6;//base current in micro-amperes
+IC=B*IB/1000;//colelctor current in milli-amperes
+
+printf("IB = %.2f μA\nIC = %.2f mA\n",IB,IC);
+
+disp("(ii)");
+VCE=VCC-IC*Rl/1000;//volatage between collector and emitter in volts
+
+printf("VCE = %.1f Volts",VCE);
+
+disp("(iii)");
+VB=VBE;//base voltage w.r.t. ground in volts
+VC=VCE;//coollector voltage w.r.t. ground in volts
+
+printf("VB = %.1f Volts\nVC = %.1f Volts\n",VB,VC);
+
+disp("(iv)");
+VCB=VC-VB;//voltage between collector and base in volts
+VBC=-VCB;//voltage between base and collector in volts
+
+printf("VCB = %.1f Volts\n",VCB);
+if VBC<0 then
+ printf("Base collector junction is reverse biased.\n")
+end
diff --git a/2882/CH5/EX5.10/Ex5_10.sce b/2882/CH5/EX5.10/Ex5_10.sce new file mode 100755 index 000000000..9a0bdaab8 --- /dev/null +++ b/2882/CH5/EX5.10/Ex5_10.sce @@ -0,0 +1,31 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 164 and 165
+clear;
+clc;
+
+//Given Data
+
+IE=1.5D-3;//emitter current in amperes
+VCC=15;//supply voltage in volts
+B=100;//DC CE current gain beta
+VBE=0.7;//forward voltage drop of emitter diode in volts
+
+//Solution
+
+//Approximations
+VR2=VCC/3;//voltage across R2 is 1/3rd of supply voltage
+VRL=VCC/3;//voltage across RL is 1/3rd of supply voltage
+
+VB=VR2;//voltage of base to ground in volts
+VE=VB-VBE;//voltage of emitter to ground in volts
+RE=VE/IE;//emitter resistance in ohms
+I=0.1*IE;//setting voltage divider current as 0.1IE and neglecting base current
+R1_plus_R2=VCC/I;//R1+R2 in ohms
+R2=VR2/VCC*R1_plus_R2;//R2 in ohms
+R1=R1_plus_R2-R2;//R1 in ohms
+
+printf("RE = %.2f kilo-ohms\n",RE/1000);
+printf("R1 = %.2f kilo-ohms\n",R1/1000);
+printf("R2 = %.2f kilo-ohms\n",R2/1000);
+//design is given in Figure E5.10
+//IE for this circuit is 1.40 mA and more accuracy can be obtained by exact equations and eliminating approximations
diff --git a/2882/CH5/EX5.11/Ex5_11.sce b/2882/CH5/EX5.11/Ex5_11.sce new file mode 100755 index 000000000..d03152808 --- /dev/null +++ b/2882/CH5/EX5.11/Ex5_11.sce @@ -0,0 +1,18 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 165
+clear;
+clc;
+
+//Given Data
+//Figure 5.26
+
+RL=470;//collector load resistance in ohms
+R=20D3;//base collector parallel resistance in ohms
+B=90;//DC CE current gain beta
+
+//Solution
+
+S=(B+1)/(1+(B*RL)/(RL+R));//stability factor S
+printf("S = %.2f",S);
+
+//decimal error as calculation is not accurate in textbook
diff --git a/2882/CH5/EX5.12/Ex5_12.sce b/2882/CH5/EX5.12/Ex5_12.sce new file mode 100755 index 000000000..1f98ba667 --- /dev/null +++ b/2882/CH5/EX5.12/Ex5_12.sce @@ -0,0 +1,16 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 165
+clear;
+clc;
+
+//Given Data
+//Figure 5.26
+
+RL=10;//load resistance in ohms which is dc resistance of primary coil of transistor
+R=20D3;//base collector parallel resistance in ohms
+B=90;//DC CE current gain beta
+
+//Solution
+
+S=(B+1)/(1+(B*RL)/(RL+R));//stability factor S
+printf("S = %.2f",S);
diff --git a/2882/CH5/EX5.13/Ex5_13.sce b/2882/CH5/EX5.13/Ex5_13.sce new file mode 100755 index 000000000..aa7cb44a8 --- /dev/null +++ b/2882/CH5/EX5.13/Ex5_13.sce @@ -0,0 +1,26 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 166
+clear;
+clc;
+
+//Given Data
+//Figure 5.27
+
+IC=20D-3;//collector current in amperes
+VCE=6;//collector to emitter voltage in volts
+VCC=15;//supply voltage in volts
+RL=390;//collector load resistance in ohms
+IB=2D-3;//base bias current in amperes
+B=90;//DC CE current gain beta
+RE=82;//emitter resistance in ohms
+C1=10D-6;//base coupling capacitance in farads
+C2=10D-6;//collector coupling capacitance in farads
+VBE=0.7;//forward voltage drop of emitter diode in volts
+
+//Solution
+
+R=(VCC-VBE-IC*RL-(IC+IB)*RE)/IB;//base collector parallel resistance in ohms
+S=(B+1)/(1+(B*RE)/(RE+R));//stability factor S
+printf("S = %.2f",S);
+
+//calculation errors in textbook as KVL is incorrectly applied
diff --git a/2882/CH5/EX5.14/Ex5_14.sce b/2882/CH5/EX5.14/Ex5_14.sce new file mode 100755 index 000000000..522f41f1f --- /dev/null +++ b/2882/CH5/EX5.14/Ex5_14.sce @@ -0,0 +1,20 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 166 and 167
+clear;
+clc;
+
+//Given Data
+//Figure 5.28
+
+VCC=12;//supply voltage in volts
+RL=6.8D3;//collector load resistance in ohms
+B=75;//DC CE current gain beta
+R=82D3;//base collector parallel resistance in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+
+//Solution
+
+IC=(VCC-VBE)/(RL+R/B);//collector current in amperes
+VCE=VCC-IC*RL;//collector to emitter voltage in volts and VCE = VC as VE = 0 V since emitter is grounded
+printf("IC = %.2f mA\n",IC*1000);
+printf("VCE = %.2f Volts\n",VCE);
diff --git a/2882/CH5/EX5.15/Ex5_15.sce b/2882/CH5/EX5.15/Ex5_15.sce new file mode 100755 index 000000000..bf43b5646 --- /dev/null +++ b/2882/CH5/EX5.15/Ex5_15.sce @@ -0,0 +1,23 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 167 and 168
+clear;
+clc;
+
+//Given Data
+//Figure 5.28
+
+VCC=12;//supply voltage in volts
+RL=6.8D3;//collector load resistance in ohms
+B=200;//DC CE current gain beta
+R=82D3;//base collector parallel resistance in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+
+//Solution
+
+IC=(VCC-VBE)/(RL+R/B);//collector current in amperes
+VCE=VCC-IC*RL;//collector to emitter voltage in volts and VCE = VC as VE = 0 V since emitter is grounded
+printf("IC = %.2f mA\n",IC*1000);
+printf("VCE = %.2f Volts\n",VCE);
+
+//error in textbooks as question is about Fig 5.27 and solved for Fig 5.28 , here solved as Fig 5.28
+//decimal approximation error in textbook
diff --git a/2882/CH5/EX5.16/Ex5_16.sce b/2882/CH5/EX5.16/Ex5_16.sce new file mode 100755 index 000000000..e6dd61cf5 --- /dev/null +++ b/2882/CH5/EX5.16/Ex5_16.sce @@ -0,0 +1,35 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 168
+clear;
+clc;
+
+//Given Data
+//Figure E5.15
+
+VCC=15;//supply voltage in volts
+RL=1.5D3;//collector load resistance in ohms
+B=100;//DC CE current gain beta
+R=82D3;//base collector parallel resistance in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+
+//Solution
+
+IC=(VCC-VBE)/(RL+R/B);//collector current in amperes
+VCE=VCC-IC*RL;//collector to emitter voltage in volts and VCE = VC as VE = 0 V since emitter is grounded
+disp("Q - point");
+printf("IB = %.2f μA\n",IC*1D6/B);
+printf("IC = %.2f mA\n",IC*1000);
+printf("VCE = %.2f Volts\n",VCE);
+
+disp("Stability factors");
+
+S1=(B+1)/(1+(B*RL)/(RL+R));//stability factor S
+printf("S = %.2f\n",S1);
+
+S2=-B/(R+RL+B*RL);//Stability factor S'
+printf("S'' = %.3f mA/V\n",S2*1000);
+
+S3=(VCC-VBE-IC*RL)/(R+RL/(1+B));//Stability factor S''
+printf("S'''' = %.2f μA\n",S3*1D6);
+
+//decimal approximation error w.r.t textbook
diff --git a/2882/CH5/EX5.17/Ex5_17.sce b/2882/CH5/EX5.17/Ex5_17.sce new file mode 100755 index 000000000..e76b0ae63 --- /dev/null +++ b/2882/CH5/EX5.17/Ex5_17.sce @@ -0,0 +1,30 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 168 and 169
+clear;
+clc;
+
+//Given Data
+//Figure E5.17
+
+B=100;//DC CE current gain beta
+VCC=15;//supply voltage in volts
+RL=1D3;//collector load resistance in ohms
+VCE=7.5;//collector to emitter voltage in volts
+IC=6D-3;//collector current in amperes
+VBE=0.7;//forward voltage drop of emitter diode in volts
+S=12;//stability factor S
+
+
+//Solution
+
+IB=IC/B;//base current in amperes
+RE=(VCC-VCE-IC*RL)/(IC+IB);//emitter resistance in ohms
+Rth=RE*(S-1)/(1-S/(1+B));//thevenin resistance of divider network in ohms
+R1=VCC*Rth/(IB*Rth+VBE+(IC+IB)*RE);//resistance R1 in ohms
+R2=R1*Rth/(R1-Rth);//resistance R2 in ohms
+
+printf("RE = %.3f kilo-ohms\n",RE/1000);
+printf("R1 = %.2f kilo-ohms\n",R1/1000);
+printf("R2 = %.2f kilo-ohms\n",R2/1000);
+
+//error in calculations in textbook for R1 and R2 as R2 cannot be less than Rth which is parallel resistance of R1 and R2
diff --git a/2882/CH5/EX5.18/Ex5_18.sce b/2882/CH5/EX5.18/Ex5_18.sce new file mode 100755 index 000000000..969eb29db --- /dev/null +++ b/2882/CH5/EX5.18/Ex5_18.sce @@ -0,0 +1,44 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 170 and 171
+clear;
+clc;
+
+//Given Data
+//Figure 5.30
+
+B=100;//DC CE current gain beta
+VCC=18;//collector supply voltage in volts
+VEE=9;//emitter supply voltage in volts
+VBE=0.7;//forward voltage drop of emitter diode in volts
+RE=30D3;//emitter resistance in ohms
+R=15D3;//base bias resistance in ohms
+RL=15D3;//collector load resistance in ohms
+
+//Solution
+
+disp("(i)");
+IE=(VEE-VBE)/(RE+R/B);//emitter current in amperes
+printf("IE = %.3f mA\n",IE*1000);
+
+disp("(ii)");
+IC=IE;//collector current in amperes
+printf("IE = %.3f mA\n",IC*1000);
+
+disp("(iii)");
+VC=VCC-IC*RL;//collector to groud voltage in volts
+printf("VC = %.2f Volts\n",VC);
+
+disp("(iv)");
+VE=-(IC*R/B+VBE);//emitter to groud voltage in volts
+printf("VE = %.2f Volts\n",VE);
+
+disp("(v)");
+VCE=VC-VE;//collector to emitter voltage in volts
+printf("VCE = %.2f Volts\n",VCE);
+
+disp("(vi)");
+S=(1+R/RE)/(1+R/B/RE);//stability factor S
+printf("S = %.4f\n",S);
+
+//calculations are carried out taking RL=9 kilo-ohm instead of 15 kilo-ohm as in Figure 5.30 in textbook
+//resulting in change in values of VC and VCE
diff --git a/2882/CH5/EX5.2/Ex5_2.sce b/2882/CH5/EX5.2/Ex5_2.sce new file mode 100755 index 000000000..cc2c169ff --- /dev/null +++ b/2882/CH5/EX5.2/Ex5_2.sce @@ -0,0 +1,17 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 149
+clear;
+clc;
+
+//Given Data
+//Figure 5.4
+
+VCC=15;//biasing voltage in volts
+Rl=1.5D3;//load resistance in ohms
+
+//Solution
+
+//Assuming VCEsat=0 volts
+ICsat=VCC/Rl*1000;//saturation current in milli-amperes
+
+printf("ICsat = %d mA\n",ICsat);
diff --git a/2882/CH5/EX5.3/Ex5_3.sce b/2882/CH5/EX5.3/Ex5_3.sce new file mode 100755 index 000000000..7a4e6f1ab --- /dev/null +++ b/2882/CH5/EX5.3/Ex5_3.sce @@ -0,0 +1,20 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 151
+clear;
+clc;
+
+//Given Data
+//Figure 5.10
+
+VCE=15;//voltage between collector and emitter in volts at IC = 0 mA
+IC=15D-3;//collecotr current in amperes in VCE = 0 Volts
+IB=35D-6;//base current at Q point in amperes
+VBE=0.7;//forward voltage drop of emitter diode in volts
+
+//Solution
+
+VCC=VCE;//biasing voltage in volts = VCE at IC = 0 mA
+R=(VCC-VBE)/IB/1000;//base biasing resistance in kilo-ohms
+Rl=VCC/IC/1000;//load resistance in kilo-ohms
+
+printf("VCC = %d Volts\n R = %.1f kilo-ohms\n Rl = %d kilo-ohm",VCC,R,Rl);
diff --git a/2882/CH5/EX5.4/Ex5_4.sce b/2882/CH5/EX5.4/Ex5_4.sce new file mode 100755 index 000000000..45fa3a9a4 --- /dev/null +++ b/2882/CH5/EX5.4/Ex5_4.sce @@ -0,0 +1,54 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 153 and 154
+clear;
+clc;
+
+//Given Data
+//Figure 5.14
+
+VCC=15;//supply voltage in volts
+RB=330D3;//base resistance in ohms
+RL=2D3;//load collector resistance in ohms
+RE=820;//emitter resistance in ohms
+B=75;//DC CE current gain beta
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Cb=12D-6;//base coupling capacitor in farads
+Ce=50D-6;//emitter bypass capacitor in farads
+
+//Solution
+
+disp("(i)");
+IB=(VCC-VBE)/(RB+B*RE)*10^6;//base current in micro ampere
+printf("IB = %.2f μA\n",IB);
+
+disp("(ii)");
+IC=B*IB/1000;//collector current in milli ampere
+printf("IC = %.2f mA\n",IC);
+
+disp("(iii)");
+VCE=VCC-IC*(RL+RE)/1000;//collector to emitter voltage in volts
+printf("VCE = %.1f Volts\n",VCE);
+
+disp("(iv)");
+VC=VCC-IC*RL/1000;//collector to ground voltage in volts
+printf("VC = %.2f Volts\n",VC);
+
+disp("(v)");
+VE=VC-VCE;//emitter to ground voltage in volts
+printf("VE = %.2f Volts\n",VE);
+
+disp("(vi)");
+VB=VBE+VE;//base to ground voltage in volts
+printf("VB = %.2f Volts\n",VB);
+
+disp("(vi)");
+VCB=VC-VB;//collector to base voltage in volts
+printf("VCB = %.1f Volts\n",VCB);
+
+if VCB>0
+ printf("VBC is less than zero indicating collector base juntion is reverse biased.")
+end
+
+//error in answers w.r.t. text book as BETA in figure is 75 and in calculations is 76
+//here BETA is taken as 75
+//also in (iv) answer is not printed in textbook
diff --git a/2882/CH5/EX5.5/Ex5_5.sce b/2882/CH5/EX5.5/Ex5_5.sce new file mode 100755 index 000000000..546bb74d1 --- /dev/null +++ b/2882/CH5/EX5.5/Ex5_5.sce @@ -0,0 +1,34 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 157 and 158
+clear;
+clc;
+
+//Given Data
+//Figure 5.19
+
+VCC=20;//supply voltage in volts
+R1=22D3;//bias resistance in ohms
+R2=2.2D3;//bias resistance in ohms
+RL=10D3;//load collector resistance in ohms
+RE=820;//emitter resistance in ohms
+B=100;//DC CE current gain beta
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Cb=15D-6;//base coupling capacitor in farads
+Ce=40D-6;//emitter bypass capacitor in farads
+Cc=15D-6;//collector coupling capacitor in farads
+
+//Solution
+
+Rth=R1*R2/(R1+R2);//thevenin resistance of R1 and R2 at base in ohms
+Vth=VCC*R2/(R1+R2);//thevenin voltage at base in volts
+
+IB=(Vth-VBE)/(Rth+(B+1)*RE)*10^6;//base current in micro ampere
+printf("IB = %.2f μA\n",IB);
+
+IC=B*IB/1000;//collector current in milli ampere
+printf("IC = %.2f mA\n",IC);
+
+VCE=VCC-IC*(RL+RE)/1000;//collector to emitter voltage in volts
+printf("VCE = %.3f Volts\n",VCE);
+
+//calculation error in textbook as Vth turns out to be 1.818 V instead of 1.67 V
diff --git a/2882/CH5/EX5.6/Ex5_6.sce b/2882/CH5/EX5.6/Ex5_6.sce new file mode 100755 index 000000000..2406edd59 --- /dev/null +++ b/2882/CH5/EX5.6/Ex5_6.sce @@ -0,0 +1,38 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 158 and 159
+clear;
+clc;
+
+//Given Data
+//Figure 5.19
+
+VCC=20;//supply voltage in volts
+R1=22D3;//bias resistance in ohms
+R2=2.2D3;//bias resistance in ohms
+RL=10D3;//load collector resistance in ohms
+RE=820;//emitter resistance in ohms
+B=100;//DC CE current gain beta
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Cb=15D-6;//base coupling capacitor in farads
+Ce=40D-6;//emitter bypass capacitor in farads
+Cc=15D-6;//collector coupling capacitor in farads
+ICO=1D-6;//leakage current in amperes
+
+//Solution
+
+Rth=R1*R2/(R1+R2);//thevenin resistance of R1 and R2 at base in ohms
+Vth=VCC*R2/(R1+R2);//thevenin voltage at base in volts
+IB=(Vth-VBE)/(Rth+(B+1)*RE);//base current in ampere
+IC=B*IB;//collector current in ampere
+
+S1=(B+1)*(1+Rth/RE)/(1+B+Rth/RE);//Stability factor S of IC against ICO
+
+S2=-B/(Rth+RE+B*RE);//Stability factor S' of IC against VBE
+
+S3=1/(B*(1+B))*(IC*((Rth+RE)*(1+B)-B*S1*RE)/(RE+Rth)-S1*ICO);//Stability factor S'' of IC against BETA
+
+printf("S=δIC/δICO=%.3f\n",S1);
+printf("S''=δIC/δVBE=%.3e\n",S2);
+printf("S''''=δIC/δB=%e\n",S3);
+
+//error in calculation in textbook for IC and S''
diff --git a/2882/CH5/EX5.7/Ex5_7.sce b/2882/CH5/EX5.7/Ex5_7.sce new file mode 100755 index 000000000..7906b0665 --- /dev/null +++ b/2882/CH5/EX5.7/Ex5_7.sce @@ -0,0 +1,26 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 161 and 162
+clear;
+clc;
+
+//Given Data
+//Figure 5.23
+
+VCC=11;//supply voltage in volts
+R=220D3;//base bias resistance in ohms
+RL=5.6D3;//load collector resistance in ohms
+RE=1.5D3;//emitter resistance in ohms
+B=75;//DC CE current gain beta
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Cb=12D-6;//base coupling capacitor in farads
+Cc=12D-6;//collector coupling capacitor in farads
+
+//Solution
+
+IB=(VCC-VBE)/(B*(RL+RE)+R);//base current in ampere
+ICQ=B*IB*1000;//quiscent collector current in milli ampere
+VCEQ=VCC-ICQ*(RE+RL)/1000;//quiscent collector to emitter voltage in volts
+printf("ICQ = %.2f mA\n",ICQ);
+printf("VCEQ = %.2f Volts\n",VCEQ);
+
+//decimal approximation error w.r.t textbook
diff --git a/2882/CH5/EX5.8/Ex5_8.sce b/2882/CH5/EX5.8/Ex5_8.sce new file mode 100755 index 000000000..6b730f0c5 --- /dev/null +++ b/2882/CH5/EX5.8/Ex5_8.sce @@ -0,0 +1,26 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 162
+clear;
+clc;
+
+//Given Data
+//Figure 5.23
+
+VCC=11;//supply voltage in volts
+R=220D3;//base bias resistance in ohms
+RL=5.6D3;//load collector resistance in ohms
+RE=1.5D3;//emitter resistance in ohms
+B=120;//DC CE current gain beta
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Cb=12D-6;//base coupling capacitor in farads
+Cc=12D-6;//collector coupling capacitor in farads
+
+//Solution
+
+IB=(VCC-VBE)/(B*(RL+RE)+R);//base current in ampere
+ICQ=B*IB*1000;//quiscent collector current in milli ampere
+VCEQ=VCC-ICQ*(RE+RL)/1000;//quiscent collector to emitter voltage in volts
+printf("ICQ = %.2f mA\n",ICQ);
+printf("VCEQ = %.2f Volts\n",VCEQ);
+
+//decimal approximation error w.r.t textbook
diff --git a/2882/CH5/EX5.9/Ex5_9.sce b/2882/CH5/EX5.9/Ex5_9.sce new file mode 100755 index 000000000..e97979e9a --- /dev/null +++ b/2882/CH5/EX5.9/Ex5_9.sce @@ -0,0 +1,27 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 162 and 163
+clear;
+clc;
+
+//Given Data
+//Figure 5.24
+
+VCC=20;//supply voltage in volts
+R=270D3;//base bias resistance in ohms(60k+90k+120k)
+RL=3.9D3;//load collector resistance in ohms
+RE=410;//emitter resistance in ohms
+B=100;//DC CE current gain beta
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Cb=12D-6;//base coupling capacitor in farads
+Cc=12D-6;//collector coupling capacitor in farads
+Ce=60D-6;//emitter bypass capacitor in farads
+
+//Solution
+
+IB=(VCC-VBE)/(B*(RL+RE)+R);//base current in ampere
+IC=B*IB*1000;//collector current in milli ampere
+VC=VCC-IC*RL/1000;//collector to ground voltage in volts
+printf("d.c. level of IB = %.1f μA\n",IB*10^6);
+printf("d.c. level of VC = %.2f Volts\n",VC);
+
+//decimal approximation error w.r.t textbook
diff --git a/2882/CH6/EX6.1/6_1.pdf b/2882/CH6/EX6.1/6_1.pdf Binary files differnew file mode 100755 index 000000000..aaa42b747 --- /dev/null +++ b/2882/CH6/EX6.1/6_1.pdf diff --git a/2882/CH6/EX6.1/Ex6_1.sce b/2882/CH6/EX6.1/Ex6_1.sce new file mode 100755 index 000000000..69f9af669 --- /dev/null +++ b/2882/CH6/EX6.1/Ex6_1.sce @@ -0,0 +1,39 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 184 and 185
+clear;
+clc;
+
+//Given Data
+//Figure 6.7
+
+VCC=20;//collector supply voltage in volts
+RC=1.5D3;//collector resistance in ohms
+RE=1.8D3;//emitter resistance in ohms
+R1=8.2D3;//divider network resistance R1 in ohms
+R2=3.9D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+
+//Solution
+
+//For DC load line
+VCEd=0:VCC;//as for load line maximum VCE is at IC=0 mA ie. VCE=VCC
+ICd=(VCC-VCEd)/(RC+RE)*1000;//equation for DC load line
+VB=VCC*R2/(R1+R2);//base to ground voltage in volts
+VE=VB-VBE;//emitter to ground voltage in volts
+IE=VE/RE;//emitter current in milli-amperes
+IC=IE;//collector current is approximately equal to emitter current
+VCE=VCC-IC*(RC+RE);//collector to emitter voltage in volts
+
+//For AC load line
+m=-1/RC;//slope of AC load line i.e. ΔIC/ΔVCE
+c=IC-m*VCE;//load line passes through Q point
+ICa=(m*VCEd+c)*1000;//AC load line equation
+
+plot2d(VCEd,[ICd' ICa'],[1,2],leg="DC LOAD LINE@AC LOAD LINE",rect=[0,0,21,7]);
+plot2d(VCE,IC*1000,-1);
+xlabel("VCE (in Volts)");
+ylabel("IC (in mA)");
+xstring(VCE+.1,IC*1000+.1,"Q point");
+xstring(VCC,.1,"R");
+xstring(.1,VCC/(RC+RE)*1000,"P");
+title("LOAD LINES FOR EXAMPLE 6.1")
diff --git a/2882/CH6/EX6.10/Ex6_10.sce b/2882/CH6/EX6.10/Ex6_10.sce new file mode 100755 index 000000000..872df58d7 --- /dev/null +++ b/2882/CH6/EX6.10/Ex6_10.sce @@ -0,0 +1,29 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 202 and 203
+clear;
+clc;
+
+//Given Data
+//Figure 6.28
+
+VCC=12;//collector supply voltage in volts
+RC=1.5D3;//collector resistance in ohms
+RE=1.5D3;//emitter resistance in ohms
+R1=82D3;//divider network resistance R1 in ohms
+R2=18D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+VT=25D-3;//voltage equivalent of temperature in volts
+RL=15D3;//load resistance in ohms
+
+//Solution
+
+VB=VCC*R2/(R1+R2);//d.c. base to ground voltage in volts
+VE=VB-VBE;//d.c. emitter to ground voltage in volts
+IE=VE/RE;//d.c. emitter current in amperes
+re=VT/IE;//equivalent BJT model emitter resistance in ohms
+Rin=re;//total input resistance in ohms
+RL_dash=RC*RL/(RC+RL);//equivalent output resistance in ohms
+Gv=RL_dash/re;//voltage gain of CC configuration
+Gi=1;//current gain for a CB amplifier is almost equal to unity
+Gp=Gi*Gv;//a.c. power gain
+printf("Voltage gain Gv = %.1f\n Current gain Gi = %d\n Power gain Gp = %.1f\n Total input resistance Rin = %.2f ohms",Gv,Gi,Gp,Rin);
diff --git a/2882/CH6/EX6.11/Ex6_11.sce b/2882/CH6/EX6.11/Ex6_11.sce new file mode 100755 index 000000000..4aca65eb4 --- /dev/null +++ b/2882/CH6/EX6.11/Ex6_11.sce @@ -0,0 +1,13 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 204
+clear;
+clc;
+
+//Given Data
+
+B=190;//current gain of single transistor
+
+//Solution
+
+Bac=B^2;//current gain of superbeta transistor if B is the gain of each of the employed transistor
+printf("Bac = %d",Bac);
diff --git a/2882/CH6/EX6.12/Ex6_12.sce b/2882/CH6/EX6.12/Ex6_12.sce new file mode 100755 index 000000000..b32ca753f --- /dev/null +++ b/2882/CH6/EX6.12/Ex6_12.sce @@ -0,0 +1,28 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 205
+clear;
+clc;
+
+//Given Data
+//Figure 6.31
+
+VCC=18;//collector supply voltage in volts
+RB=3.9D6;//base resistance in ohms
+RE=470;//emitter resistance in ohms
+VBE=1.6;//forward voltage drop of emitter diode of darlington pair in volts
+Bac=10000;//DC current gain beta for darlington pair
+
+//Solution
+
+IB=(VCC-VBE)/(RB+Bac*RE);//base current in amperes
+IE=Bac*IB;//emitter current in amperes
+IC=IE;//collector current is almost equal to emitter current
+VE=IE*RE;//emitter to ground voltage in volts
+VB=VE+VBE;//base to ground voltage in volts
+printf("IB = %.2f μA\n ",IB*10^6);
+printf("IE = %.1f mA\n ",IE*10^3);
+printf("IC = %.1f mA\n ",IC*10^3);
+printf("VE = %.2f Volts\n ",VE);
+printf("VB = %.2f Volts\n ",VB);
+
+//error in calculation in textbook for VB
diff --git a/2882/CH6/EX6.13/Ex6_13.sce b/2882/CH6/EX6.13/Ex6_13.sce new file mode 100755 index 000000000..82394ffd8 --- /dev/null +++ b/2882/CH6/EX6.13/Ex6_13.sce @@ -0,0 +1,19 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 207
+clear;
+clc;
+
+//Given Data
+//Figure 6.31
+
+VCC=18;//collector supply voltage in volts
+RB=3.9D6;//base resistance in ohms
+RE=470;//emitter resistance in ohms
+VBE=1.6;//forward voltage drop of emitter diode of darlington pair in volts
+Bac=10000;//DC current gain beta for darlington pair
+ri=6D3;//emitter diode forward resistance
+
+//Solution
+
+Zin=1/(1/RB+1/(ri+Bac*RE));//input impedance of the circuit
+printf("Zin = %.3f Mega-ohms",Zin/10^6);
diff --git a/2882/CH6/EX6.14/Ex6_14.sce b/2882/CH6/EX6.14/Ex6_14.sce new file mode 100755 index 000000000..6a3ce1e77 --- /dev/null +++ b/2882/CH6/EX6.14/Ex6_14.sce @@ -0,0 +1,20 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 207
+clear;
+clc;
+
+//Given Data
+//Figure 6.31
+
+VCC=18;//collector supply voltage in volts
+RB=3.9D6;//base resistance in ohms
+RE=470;//emitter resistance in ohms
+VBE=1.6;//forward voltage drop of emitter diode of darlington pair in volts
+Bac=10000;//DC current gain beta for darlington pair
+
+//Solution
+
+Gi=RB/(RE+RB/Bac);//a.c. circuit current gain
+printf("Gi = %d",Gi);
+
+//error in question as base current can not be obtained without an input also not solved in textbook
diff --git a/2882/CH6/EX6.15/Ex6_15.sce b/2882/CH6/EX6.15/Ex6_15.sce new file mode 100755 index 000000000..f468c47d6 --- /dev/null +++ b/2882/CH6/EX6.15/Ex6_15.sce @@ -0,0 +1,21 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 207
+clear;
+clc;
+
+//Given Data
+//Figure 6.31
+
+VCC=18;//collector supply voltage in volts
+RB=3.9D6;//base resistance in ohms
+RE=470;//emitter resistance in ohms
+VBE=1.6;//forward voltage drop of emitter diode of darlington pair in volts
+Bac=10000;//DC current gain beta for darlington pair
+ri=6D3;//emitter forward resistance of darlington pair
+
+//Solution
+
+Zout=1/(1/RE+1/ri+1/(ri/Bac));//output impedance of the overall circuit in ohms
+Gv=(RE+Bac*RE)/(ri+RE+Bac*RE);//a.c. voltage gain
+printf("Zout = %.1f ohms\n ",Zout);
+printf("Gv = %.4f",Gv);
diff --git a/2882/CH6/EX6.2/Ex6_2.sce b/2882/CH6/EX6.2/Ex6_2.sce new file mode 100755 index 000000000..b83e57718 --- /dev/null +++ b/2882/CH6/EX6.2/Ex6_2.sce @@ -0,0 +1,40 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 186,187 and 188
+clear;
+clc;
+
+//Given Data
+//Figure 6.9,6.10,6.11,6.12,6.13
+
+VCC=15;//collector supply voltage in volts
+RC=1D3;//collector resistance in ohms
+RE=390;//emitter resistance in ohms
+R1=18D3;//divider network resistance R1 in ohms
+R2=3.9D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Bdc=120;//DC CE current gain beta
+Bac=130;//AC CE current gain beta
+
+//Solution
+
+disp("DC analysis for Figure 6.10");
+Rin_dc=Bdc*RE;//dc input resistance in ohms
+if 0.1*Rin_dc>R2 then
+ VB=VCC*R2/(R1+R2);//base to ground voltage in volts , since Rin>10*R2 it can be neglected
+end
+VE=VB-VBE;//emitter to ground voltage in volts
+IE=VE/RE;//emitter current in amperes
+IC=IE;//collector current is approximately equal to emitter current
+VC=VCC-IC*RC;//collector to ground voltage in volts
+VCE=VC-VE;//collector to emitter voltage in volts
+
+printf("IC = %.2f mA\n",IC*1000);
+printf("VCE = %.2f Volts\n",VCE);
+
+disp("AC analysis for Figure 6.12");
+printf("Rin'' = R1||R2||Rin where Rin=Vb/Ib\n");
+printf("Vb=Ie*(re+RE)\n =Bac*Ib*(re+RE)\n");
+printf("(Rin)''= Bac*(re+RE)\n");
+printf("Rout = RC||rC = RC\n as rC>>RC\n");
+
+//decimal error w.r.t. textbook due to approximations
diff --git a/2882/CH6/EX6.3/Ex6_3.sce b/2882/CH6/EX6.3/Ex6_3.sce new file mode 100755 index 000000000..6f8469aab --- /dev/null +++ b/2882/CH6/EX6.3/Ex6_3.sce @@ -0,0 +1,37 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 188
+clear;
+clc;
+
+//Given Data
+//Figure 6.11
+
+VCC=15;//collector supply voltage in volts
+RC=1D3;//collector resistance in ohms
+RE=390;//emitter resistance in ohms
+R1=18D3;//divider network resistance R1 in ohms
+R2=3.9D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Bdc=120;//DC CE current gain beta
+Bac=130;//AC CE current gain beta
+VT=0.25D-3;//voltage equivalent of temperature in volts
+Vs=5D-3;//source rms voltage in volts
+Rs=600;//source internal impedance in ohms
+
+//Solution
+
+Rin_dc=Bdc*RE;//dc input resistance in ohms
+if 0.1*Rin_dc>R2 then
+ VB=VCC*R2/(R1+R2);//base to ground voltage in volts , since Rin>10*R2 it can be neglected
+end
+VE=VB-VBE;//emitter to ground voltage in volts
+IE=VE/RE;//emitter current in amperes
+IC=IE;//collector current is approximately equal to emitter current
+VC=VCC-IC*RC;//collector to ground voltage in volts
+VCE=VC-VE;//collector to emitter voltage in volts
+
+re=VT/IE;//equivalent BJT model emitter resistance in ohms
+Rin_dash=Bac*(RE+re);//internal resistance of BJT in ohms
+Rin=1/(1/R1+1/R2+1/Rin_dash);//total internal resistance is Rin=R1||R2||Rin'
+Vb=Rin/(Rs+Rin)*Vs;//signal voltage at base in volts
+printf("Vb = %.2f mV",Vb*1000);
diff --git a/2882/CH6/EX6.4/Ex6_4.sce b/2882/CH6/EX6.4/Ex6_4.sce new file mode 100755 index 000000000..1271976f7 --- /dev/null +++ b/2882/CH6/EX6.4/Ex6_4.sce @@ -0,0 +1,42 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 190
+clear;
+clc;
+
+//Given Data
+//Figure 6.11
+
+VCC=15;//collector supply voltage in volts
+RC=1D3;//collector resistance in ohms
+RE=390;//emitter resistance in ohms
+R1=18D3;//divider network resistance R1 in ohms
+R2=3.9D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Bdc=120;//DC CE current gain beta
+Bac=130;//AC CE current gain beta
+VT=25D-3;//voltage equivalent of temperature in volts
+
+//Solution
+
+Rin_dc=Bdc*RE;//dc input resistance in ohms
+if 0.1*Rin_dc>R2 then
+ VB=VCC*R2/(R1+R2);//base to ground voltage in volts , since Rin>10*R2 it can be neglected
+end
+VE=VB-VBE;//emitter to ground voltage in volts
+IE=VE/RE;//emitter current in amperes
+IC=IE;//collector current is approximately equal to emitter current
+VC=VCC-IC*RC;//collector to ground voltage in volts
+VCE=VC-VE;//collector to emitter voltage in volts
+re=VT/IE;//equivalent BJT model emitter resistance in ohms
+
+disp("(i)");
+printf("Without emitter bypass capacitor.\n");
+gain=RC/(re+RE);//base to collector voltage gain
+printf("Base to collector voltage gain = %.2f\n",gain);
+
+disp("(ii)");
+printf("With RE shorted.\n");
+gain=RC/re;//base to collector voltage gain
+printf("Base to collector voltage gain = %d\n",gain);
+
+//gain deviation due to approximations in textbook
diff --git a/2882/CH6/EX6.5/Ex6_5.sce b/2882/CH6/EX6.5/Ex6_5.sce new file mode 100755 index 000000000..24ddde16e --- /dev/null +++ b/2882/CH6/EX6.5/Ex6_5.sce @@ -0,0 +1,38 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 191 and 192
+clear;
+clc;
+
+//Given Data
+//Figure 6.9
+
+VCC=15;//collector supply voltage in volts
+RC=1D3;//collector resistance in ohms
+RE=390;//emitter resistance in ohms
+R1=18D3;//divider network resistance R1 in ohms
+R2=3.9D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Bdc=120;//DC CE current gain beta
+Bac=130;//AC CE current gain beta
+VT=25D-3;//voltage equivalent of temperature in volts
+Vs=5D-3;//source rms voltage in volts
+Rs=600;//source internal impedance in ohms
+re=5;//equivalent BJT model emitter resistance in ohms
+RL=6.8D3;//load resistance in ohms
+C2=50D-6;//emitter bypass capacitance in farads
+
+//Solution
+
+disp("(i)");
+RL_dash=RC*RL/(RC+RL);//a.c. value of collector resistance in ohms
+Gv=RL_dash/re;//a.c. voltage gain
+printf("A.C. Voltage gain Gv = %.1f\n",Gv);
+
+disp("(ii)");
+Rin_dash=Bac*(RE+re);//internal resistance of BJT in ohms
+Rin=1/(1/R1+1/R2+1/Rin_dash);//total internal resistance is Rin=R1||R2||Rin'
+f=Rin/(Rs+Rin);//input attenuation factor
+Gv_dash=f*Gv;//overall a.c. voltage gain
+printf("Overall A.C. Voltage gain Gv'' = %.1f\n",Gv_dash);
+
+//gain deviation due to approximations in textbook
diff --git a/2882/CH6/EX6.6/6_6.pdf b/2882/CH6/EX6.6/6_6.pdf Binary files differnew file mode 100755 index 000000000..bf624916e --- /dev/null +++ b/2882/CH6/EX6.6/6_6.pdf diff --git a/2882/CH6/EX6.6/Ex6_6.sce b/2882/CH6/EX6.6/Ex6_6.sce new file mode 100755 index 000000000..022d84060 --- /dev/null +++ b/2882/CH6/EX6.6/Ex6_6.sce @@ -0,0 +1,64 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 193,194 and 195
+clear;
+clc;
+
+//Given Data
+//Figure 6.18,6.19,6.20
+
+VCC=15;//collector supply voltage in volts
+RC=5.6D3;//collector resistance in ohms
+RE0=390;//unbypassed emitter resistance in ohms
+RE1=390;//bypased emitter resistance in ohms
+R1=33D3;//divider network resistance R1 in ohms
+R2=4.7D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Bdc=140;//DC CE current gain beta
+Bac=160;//AC CE current gain beta
+VT=25D-3;//voltage equivalent of temperature in volts
+Vs=15D-3;//source rms voltage in volts
+Rs=600;//source internal impedance in ohms
+RL=68D3;//load resistance in ohms
+C1=10D-6;//input coupling capacitance in farads
+C2=50D-6;//emitter bypass capacitance in farads
+C3=10D-6;//output coupling capacitance in farads
+
+
+//Solution
+
+//DC analysis
+Rin_dc=Bdc*(RE0+RE1);//dc input resistance in ohms
+if 0.1*Rin_dc>R2 then
+ VB=VCC*R2/(R1+R2);//base to ground voltage in volts , since Rin>10*R2 it can be neglected
+end
+VE=VB-VBE;//emitter to ground voltage in volts
+IE=VE/(RE0+RE1);//emitter current in amperes
+IC=IE;//collector current is approximately equal to emitter current
+VC=VCC-IC*RC;//collector to ground voltage in volts
+
+//AC analysis
+re=VT/IE;//equivalent BJT model emitter resistance in ohms
+Rin_dash=Bac*(RE0+re);//internal resistance of BJT in ohms
+Rin=1/(1/R1+1/R2+1/Rin_dash);//total internal resistance is Rin=R1||R2||Rin'
+f=Rin/(Rs+Rin);//input attenuation factor
+RL_dash=1/(1/RC+1/RL);//effective load resistance
+Gv=RL_dash/(re+RE0);//a.c. voltage gain
+Gv_dash=f*Gv;//overall a.c. voltage gain
+vc=Gv_dash*Vs;//a.c voltage at collector in volts
+printf("Output voltage will be a.c. signal of amplitude %d mV \nCollector voltage will be the same voltage mounted on a d.c. level of %.1f Volts",vc*1000,VC);
+//plotting the curves
+t=0:0.01:2*3.14;//one period
+y1=VC+vc*sin(t);//total collector voltage
+y2=vc*1000*sin(t);//output voltage
+
+subplot(2,1,1);
+plot(y1);
+title("(a)Collector Voltage");
+ylabel("Vc (volts)");
+xlabel("time period");
+
+subplot(2,1,2);
+plot(y2);
+title("(b)Output Voltage");
+ylabel("Vc (milli-volts)");
+xlabel("time period");
diff --git a/2882/CH6/EX6.7/Ex6_7.sce b/2882/CH6/EX6.7/Ex6_7.sce new file mode 100755 index 000000000..15db098d3 --- /dev/null +++ b/2882/CH6/EX6.7/Ex6_7.sce @@ -0,0 +1,56 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 195 and 196
+clear;
+clc;
+
+//Given Data
+//Figure 6.18,6.19,6.20
+
+VCC=15;//collector supply voltage in volts
+RC=5.6D3;//collector resistance in ohms
+RE0=390;//unbypassed emitter resistance in ohms
+RE1=390;//bypased emitter resistance in ohms
+R1=33D3;//divider network resistance R1 in ohms
+R2=4.7D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Bdc=140;//DC CE current gain beta
+Bac=160;//AC CE current gain beta
+VT=25D-3;//voltage equivalent of temperature in volts
+Vs=15D-3;//source rms voltage in volts
+Rs=600;//source internal impedance in ohms
+C1=10D-6;//input coupling capacitance in farads
+C2=50D-6;//emitter bypass capacitance in farads
+C3=10D-6;//output coupling capacitance in farads
+RL=[3.3D3 10D3 33D3 100D3 500D3 %inf] ;//load resistances in ohms
+
+
+//Solution
+
+for i=1:6
+
+printf("Case (%d)\n RL = %.1f kilo-ohms\n",i,RL(i)/1000);
+Rin_dc=Bdc*(RE0+RE1);//dc input resistance in ohms
+if 0.1*Rin_dc>R2 then
+ VB=VCC*R2/(R1+R2);//base to ground voltage in volts , since Rin>10*R2 it can be neglected
+end
+VE=VB-VBE;//emitter to ground voltage in volts
+IE=VE/(RE0+RE1);//emitter current in amperes
+IC=IE;//collector current is approximately equal to emitter current
+VC=VCC-IC*RC;//collector to ground voltage in volts
+re=VT/IE;//equivalent BJT model emitter resistance in ohms
+Rin_dash=Bac*(RE0+re);//internal resistance of BJT in ohms
+Rin=1/(1/R1+1/R2+1/Rin_dash);//total internal resistance is Rin=R1||R2||Rin'
+f=Rin/(Rs+Rin);//input attenuation factor
+if RL(i)==%inf then
+ RL_dash=RC;//effective load resistance
+else
+ RL_dash=1/(1/RC+1/RL(i));//effective load resistance
+end
+Gv=RL_dash/(re+RE0);//a.c. voltage gain
+Gv_dash=f*Gv;//overall a.c. voltage gain
+vc=Gv_dash*Vs;//a.c voltage at collector in volts
+
+printf("Output voltage vc = %.2f mV\n",vc*1000);
+end
+
+//error in answers in textbook due to approximations
diff --git a/2882/CH6/EX6.8/Ex6_8.sce b/2882/CH6/EX6.8/Ex6_8.sce new file mode 100755 index 000000000..4f0956f60 --- /dev/null +++ b/2882/CH6/EX6.8/Ex6_8.sce @@ -0,0 +1,54 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 197
+clear;
+clc;
+
+//Given Data
+//Figure 6.18,6.19,6.20
+
+VCC=15;//collector supply voltage in volts
+RC=5.6D3;//collector resistance in ohms
+RE0=390;//unbypassed emitter resistance in ohms
+RE1=390;//bypased emitter resistance in ohms
+R1=33D3;//divider network resistance R1 in ohms
+R2=4.7D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Bdc=140;//DC CE current gain beta
+Bac=160;//AC CE current gain beta
+VT=25D-3;//voltage equivalent of temperature in volts
+Vs=15D-3;//source rms voltage in volts
+Rs=600;//source internal impedance in ohms
+C1=10D-6;//input coupling capacitance in farads
+C2=50D-6;//emitter bypass capacitance in farads
+C3=10D-6;//output coupling capacitance in farads
+RL=68D3;//load resistance in ohms
+
+//Solution
+
+Rin_dc=Bdc*(RE0+RE1);//dc input resistance in ohms
+if 0.1*Rin_dc>R2 then
+ VB=VCC*R2/(R1+R2);//base to ground voltage in volts , since Rin>10*R2 it can be neglected
+end
+VE=VB-VBE;//emitter to ground voltage in volts
+IE=VE/(RE0+RE1);//emitter current in amperes
+IC=IE;//collector current is approximately equal to emitter current
+VC=VCC-IC*RC;//collector to ground voltage in volts
+
+re=VT/IE;//equivalent BJT model emitter resistance in ohms
+Rin_dash=Bac*(RE0+re);//internal resistance of BJT in ohms
+Rin=1/(1/R1+1/R2+1/Rin_dash);//total internal resistance is Rin=R1||R2||Rin'
+Vb=Rin/(Rs+Rin)*Vs;//signal voltage at base in volts
+Ib=Vb/Rin_dash;//base current due to source
+Is=Vs/(Rin+Rs);//current driven from source in amperes
+Ic=Bac*Ib;//collector a.c. current
+Gi_dash=Ic/Is;//overall a.c. current gain
+RL_dash=RC*RL/(RC+RL);//a.c. value of collector resistance in ohms
+Gv=RL_dash/re;//a.c. voltage gain
+f=Rin/(Rs+Rin);//input attenuation factor
+Gv_dash=f*Gv;//overall a.c. voltage gain
+Gp_dash=Gv_dash*Gi_dash;//a.c. power gain
+
+printf("Current gain Gi'' = %.2f and power gain Gp'' = %.2f",Gi_dash,Gp_dash);
+
+
+//error in calculation and missing calculation of power gain in textbook
diff --git a/2882/CH6/EX6.9/Ex6_9.sce b/2882/CH6/EX6.9/Ex6_9.sce new file mode 100755 index 000000000..ef2a635b5 --- /dev/null +++ b/2882/CH6/EX6.9/Ex6_9.sce @@ -0,0 +1,36 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 6 Single Staje BJT Amplifiers Pg no. 200
+clear;
+clc;
+
+//Given Data
+//Figure 6.25
+
+VCC=15;//collector supply voltage in volts
+RE=1.5D3;//emitter resistance in ohms
+R1=12D3;//divider network resistance R1 in ohms
+R2=10D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+Bac=150;//AC CE current gain beta
+VT=25D-3;//voltage equivalent of temperature in volts
+Vs=1;//input rms a.c. voltage in volts
+Rs=600;//source internal impedance in ohms
+RL=12D3;//load resistance in ohms
+
+//Solution
+
+Req=RE*RL/(RE+RL);//equivalent output resistance in ohms
+Rin_dash=Bac*Req;//base input resistance
+Rin=1/(1/R1+1/R2+1/Rin_dash);//total input resistance in ohms
+VB=VCC*R2/(R1+R2);//d.c. base to ground voltage in volts
+VE=VB-VBE;//d.c. emitter to ground voltage in volts
+IE=VE/RE;//d.c. emitter current in amperes
+re=VT/IE;//equivalent BJT model emitter resistance in ohms
+Gv=Req/(Req+re);//voltage gain of CC configuration
+Ie=Gv*Vs/Req;//a.c. emitter current in amperes
+Iin=Vs/Rin;//a.c. input current in amperes
+Gi=Ie/Iin;//a.c. current gain
+Gp=Gi*Gv;//a.c. power gain
+printf("Voltage gain Gv = %.3f\n Current gain Gi = %.2f\n Power gain Gp = %.2f\n Total input resistance Rin = %.2f kilo-ohms",Gv,Gi,Gp,Rin/1000);
+
+//decimal errors in textbook due to approximations
diff --git a/2882/CH7/EX7.1/Ex7_1.sce b/2882/CH7/EX7.1/Ex7_1.sce new file mode 100755 index 000000000..a48115874 --- /dev/null +++ b/2882/CH7/EX7.1/Ex7_1.sce @@ -0,0 +1,26 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 220
+clear;
+clc;
+
+//Given Data
+//Figure 7.7
+
+IDSS=15D-3;//drain saturation current in amperes
+VGS_cutoff=-5;//gate to source cutoff voltage in volts
+RD=300;//drain resistance in ohms
+
+//Solution
+
+VP=-VGS_cutoff;//pinch-off voltage in volts
+VDS=VP;//drain to source voltage in volts should be equal to VP or more than that for constant current region
+VGS=0;//gate to source voltage in volts
+ID=IDSS;//drain current in amperes is saturation current because VGS=0 volts
+VRD=ID*RD;//voltage drop across resistor
+VD_dash_min=VRD+VDS;//minimum source voltage required for constant current region in volts
+printf("Minimum VD'' required to place JFET into constant current region = %.1f Volts\n ",VD_dash_min);
+VD_dash=15;//given value of VD'
+if VD_dash>VD_dash_min then
+ ID=IDSS;//drain current in equal to saturation current
+end
+printf("Drain current for VD'' = %d Volts , ID = %d mA\n And increased voltage will appear as drop in drain source terminals.",VD_dash,ID*1000);
diff --git a/2882/CH7/EX7.10/Ex7_10.sce b/2882/CH7/EX7.10/Ex7_10.sce new file mode 100755 index 000000000..7ffdcff41 --- /dev/null +++ b/2882/CH7/EX7.10/Ex7_10.sce @@ -0,0 +1,14 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 237 and 238
+clear;
+clc;
+
+//Given Data
+
+gm=5D-3;//transconductance in Siemens
+RD=1D3;//drain resistance in ohms
+
+//Solution
+
+GV=gm*RD;//voltage gain
+printf("GV = %d",GV);
diff --git a/2882/CH7/EX7.11/Ex7_11.sce b/2882/CH7/EX7.11/Ex7_11.sce new file mode 100755 index 000000000..fadf0da8b --- /dev/null +++ b/2882/CH7/EX7.11/Ex7_11.sce @@ -0,0 +1,16 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 238
+clear;
+clc;
+
+//Given Data
+//Figure 7.30
+
+gm=5D-3;//transconductance in Siemens
+RD=1.2D3;//drain resistance in ohms
+RS=330;//source resistance in ohms
+
+//Solution
+
+GV=gm*RD/(1+gm*RS);//voltage gain
+printf("GV = %.2f",GV);
diff --git a/2882/CH7/EX7.12/Ex7_12.sce b/2882/CH7/EX7.12/Ex7_12.sce new file mode 100755 index 000000000..6685f4577 --- /dev/null +++ b/2882/CH7/EX7.12/Ex7_12.sce @@ -0,0 +1,20 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 241
+clear;
+clc;
+
+//Given Data
+//Figure 7.31
+
+gm=5D-3;//transconductance in Siemens
+RD=2.7D3;//drain resistance in ohms
+RL=3.3D3;//load resistance in ohms
+
+//Solution
+
+RL_eq=RD*RL/(RD+RL);//equivalent load resistance in ohms
+GV_dash=gm*RL_eq;//voltage gain for loaded circuit
+GV=gm*RD;//voltage gain for unloaded circuit
+printf("Voltage gain GV'' = %.2f\n Unloaded a.c. voltage gain GV = %.1f",GV_dash,GV);
+
+//decimal approximation in textbook
diff --git a/2882/CH7/EX7.13/Ex7_13.sce b/2882/CH7/EX7.13/Ex7_13.sce new file mode 100755 index 000000000..93f060be2 --- /dev/null +++ b/2882/CH7/EX7.13/Ex7_13.sce @@ -0,0 +1,75 @@ +clear;
+clc;
+
+disp("AS ON PAGE NUMBER 242");
+//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 242,243 and 244
+
+//Given Data
+//Figure 7.37
+
+VGS_Q=-2.5;//quiscent gate to source voltage in volts
+IDQ=5D-3;//quiscent drain current in amperes
+VDD=12;//drain supply voltage in volts
+IDSS=12D-3;//drain saturation current in amperes
+VP=-5;//pinch off voltage in volts
+YOS=20D-6;//AC drain admittance of JFET in Siemens
+RS=1.5D3;//sourcce resistance in ohms
+RG=1.5D6;//gate resistance in ohms
+C1=0.1D-6;//gate coupling capacitance in farads
+C2=0.1D-6;//drain coupling capacitance in farads
+
+//Solution
+
+disp("(i)");
+gm0=2*IDSS/abs(VP);//transconductance for VGS=0 Volts in Siemens
+gm=gm0*(1-VGS_Q/VP);//transconductance in Siemens
+printf("gm = %.1f mS\n",gm*10^3);
+
+disp("(ii)");
+rd=1/YOS;//AC drain resistance in ohms
+printf("rd = %d kilo ohms\n",rd/10^3);
+
+disp("(iii)");
+Zin=RG;//input impedance in ohms
+printf("Zin = %.1f Mega-ohms\n",Zin/10^6);
+
+disp("(iv)");
+Zout=1/(1/rd+1/RS+gm);//output impedance with rd connected in ohms
+printf("Zout with rd = %d ohms\n",Zout);
+Zout_dash=1/(1/RS+gm);//output impedance with rd disconnected in ohms
+printf("Zout without rd = %.2f ohms\n",Zout_dash);
+
+disp("(v)");
+GV=gm*rd*RS/(rd+RS+gm*rd*RS);//voltage gain with rd connected
+printf("GV with rd = %.2f\n",GV);
+GV_dash=gm*RS/(1+gm*RS);//voltage gain with rd disconnected
+printf("GV without rd = %.3f\n",GV_dash);
+
+//decimal approximations in textbook
+
+disp("AS ON PAGE NUMBER 245");
+
+//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 245 and 246
+
+//Given Data
+//Figure E7.13
+
+VDD=12;//drain supply voltage in volts
+gm=4000D-6;//transconductance in Siemens
+YOS=20D-6;//AC drain admittance of JFET in Siemens
+RS=2.2D3;//sourcce resistance in ohms
+RD=5D3;//drain resistance in ohms
+RL=5D3;//load resistance in ohms
+
+//Solution
+
+RL_dash=RD*RL/(RD+RL);//equivalent load resistance in ohms
+GV=gm*RL_dash;//voltage gain
+Rin_source=1/gm;//input resistance at source terminal in ohms
+Rin_net=Rin_source*RS/(Rin_source+RS);//net input resistance in ohms
+Rout=1/(1/rd+1/RD+1/RL);//output resistance in ohms
+printf("Voltage gain GV = %d\n",GV);
+printf("Input resistance Rin = %.1f ohms\n",Rin_net);
+printf("Output resistance Rout = %.2f kilo-ohms\n",Rout/10^3);
diff --git a/2882/CH7/EX7.14/Ex7_14.sce b/2882/CH7/EX7.14/Ex7_14.sce new file mode 100755 index 000000000..9ff071f7d --- /dev/null +++ b/2882/CH7/EX7.14/Ex7_14.sce @@ -0,0 +1,20 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 251
+clear;
+clc;
+
+//Given Data
+
+IDSS=15D-3;//drain saturation current in amperes
+VGS0=-6;//gate to source cutoff voltage in volts
+VGS_1=-2;//gate to source voltage in volts
+VGS_2=2;//gate to source voltage in volts
+
+//Solution
+
+ID_1=IDSS*(1-VGS_1/VGS0)^2;//drain current for VGS_1 in amperes
+ID_2=IDSS*(1-VGS_2/VGS0)^2;//drain current for VGS_2 in amperes
+printf("For VGS = %d Volts\nID = %.2f mA\n\n",VGS_1,ID_1*10^3);
+printf("For VGS = %d Volts\nID = %.2f mA\n\n",VGS_2,ID_2*10^3);
+
+//decimal are rounded off here
diff --git a/2882/CH7/EX7.15/Ex7_15.sce b/2882/CH7/EX7.15/Ex7_15.sce new file mode 100755 index 000000000..d305ce310 --- /dev/null +++ b/2882/CH7/EX7.15/Ex7_15.sce @@ -0,0 +1,23 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 251 and 252
+clear;
+clc;
+
+//Given Data
+
+IDSS=20D-3;//drain saturation current in amperes
+VGS0=6;//gate to source cutoff voltage in volts
+VGS_1=3;//gate to source voltage in volts
+VGS_2=-3;//gate to source voltage in volts
+
+//Solution
+
+ID_1=IDSS*(1-VGS_1/VGS0)^2;//drain current for VGS_1 in amperes
+ID_2=IDSS*(1-VGS_2/VGS0)^2;//drain current for VGS_2 in amperes
+printf("For VGS = %d Volts\nID = %d mA\n\n",VGS_1,ID_1*10^3);
+printf("For VGS = %d Volts\nID = %d mA\n\n",VGS_2,ID_2*10^3);
+if VGS0>0 then
+ printf("Since VGS0 is positive,this is an p-channel MOSFET");
+else
+ printf("Since VGS0 is negative,this is an n-channel MOSFET");
+end
diff --git a/2882/CH7/EX7.16/Ex7_16.sce b/2882/CH7/EX7.16/Ex7_16.sce new file mode 100755 index 000000000..773ce56f2 --- /dev/null +++ b/2882/CH7/EX7.16/Ex7_16.sce @@ -0,0 +1,23 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 253
+clear;
+clc;
+
+//Given Data
+//Figure 7.47
+
+ID_ON=5D-3;//ON drain current in amperes
+VGS_th=5;//threshold gate to source voltage in volts
+VGS=9;//gate to source voltage in volts
+VDD=20;//drain supply voltage in volts
+RD=1D3;//drain resistance in ohms
+R1=2.2D3;//voltage divider network resistance R1 in ohms
+R2=3.3D3;//voltage divider network resistance R2 in ohms
+
+//Solution
+
+VGS_Q=VDD*R2/(R1+R2);//gate to source voltage in volts
+C=ID_ON/(VGS-VGS_th)^2;//constant C in ampere/volt^2
+ID=C*(VGS_Q-VGS_th)^2;//drain current in amperes
+VDS=VDD-ID*RD;//drain to source voltage in volts
+printf("VGS = %d Volts\n VDS = %.2f Volts",VGS_Q,VDS);
diff --git a/2882/CH7/EX7.17/Ex7_17.sce b/2882/CH7/EX7.17/Ex7_17.sce new file mode 100755 index 000000000..31f7834cc --- /dev/null +++ b/2882/CH7/EX7.17/Ex7_17.sce @@ -0,0 +1,19 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 254 and 255
+clear;
+clc;
+
+//Given Data
+//Figure 7.50
+
+IDSS=15D-3;//drain saturation current in amperes
+VGS0=-6;//cut-off gate to source voltage in volts
+VDD=20;//drain supply voltage in volts
+RD=470;//drain resistance in ohms
+RG=8.2D6;//gate resistance in ohms
+
+//Solution
+
+ID=IDSS;//drain current in amperes
+VDS=VDD-ID*RD;//drain to source voltage in volts
+printf("VDS = %.2f Volts",VDS);
diff --git a/2882/CH7/EX7.18/Ex7_18.sce b/2882/CH7/EX7.18/Ex7_18.sce new file mode 100755 index 000000000..661b5ab7c --- /dev/null +++ b/2882/CH7/EX7.18/Ex7_18.sce @@ -0,0 +1,24 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 255 and 256
+clear;
+clc;
+
+//Given Data
+//Figure 7.49(b)
+
+R1=8.2D3;//divider network resistance R1 in ohms
+R2=15D3;//divider network resistance R2 in ohms
+RD=680;//drain resistance in ohms
+RS=0;//source resistance in ohms
+VDD=20;//drain supply voltage in volts
+ID_ON=2D-3;//ON drain current in amperes
+VGS=10;//gate to source voltage in volts
+VGS_th=5;//threshold voltage in volts
+
+//Solution
+
+VGS_Q=VDD*R2/(R1+R2);//gate to source voltage in volts
+C=ID_ON/(VGS-VGS_th)^2;//constant C in ampere/volt^2
+ID=C*(VGS_Q-VGS_th)^2;//drain current in amperes
+VDS=VDD-ID*RD;//drain to source voltage in volts
+printf("VDS = %.2f Volts",VDS);
diff --git a/2882/CH7/EX7.19/Ex7_19.sce b/2882/CH7/EX7.19/Ex7_19.sce new file mode 100755 index 000000000..661b5ab7c --- /dev/null +++ b/2882/CH7/EX7.19/Ex7_19.sce @@ -0,0 +1,24 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 255 and 256
+clear;
+clc;
+
+//Given Data
+//Figure 7.49(b)
+
+R1=8.2D3;//divider network resistance R1 in ohms
+R2=15D3;//divider network resistance R2 in ohms
+RD=680;//drain resistance in ohms
+RS=0;//source resistance in ohms
+VDD=20;//drain supply voltage in volts
+ID_ON=2D-3;//ON drain current in amperes
+VGS=10;//gate to source voltage in volts
+VGS_th=5;//threshold voltage in volts
+
+//Solution
+
+VGS_Q=VDD*R2/(R1+R2);//gate to source voltage in volts
+C=ID_ON/(VGS-VGS_th)^2;//constant C in ampere/volt^2
+ID=C*(VGS_Q-VGS_th)^2;//drain current in amperes
+VDS=VDD-ID*RD;//drain to source voltage in volts
+printf("VDS = %.2f Volts",VDS);
diff --git a/2882/CH7/EX7.2/Ex7_2.sce b/2882/CH7/EX7.2/Ex7_2.sce new file mode 100755 index 000000000..59597ae0e --- /dev/null +++ b/2882/CH7/EX7.2/Ex7_2.sce @@ -0,0 +1,20 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 224
+clear;
+clc;
+
+//Given Data
+
+IDSS=30D-3;//drain saturation current in amperes
+VGS_cutoff=-10;//gate to source cutoff voltage in volts
+gm0=5000D-6;//transconductance at VGS=0 Volts in Siemens
+VGS=-5;//gate to source voltage in volts
+
+//Solution
+
+gm=gm0*(1-VGS/VGS_cutoff);//transconductance for given VGS in Siemens
+ID=IDSS*(1-VGS/VGS_cutoff)^2;//drain current for given VGS in amperes
+printf("gm = %d μS\n ",gm*10^6);
+printf("ID = %.1f mA",ID*10^3);
+
+//calculation of gm is incorrect in textbook as gm0=5000μS and not 500μS
diff --git a/2882/CH7/EX7.3/Ex7_3.sce b/2882/CH7/EX7.3/Ex7_3.sce new file mode 100755 index 000000000..4565f5f56 --- /dev/null +++ b/2882/CH7/EX7.3/Ex7_3.sce @@ -0,0 +1,24 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 224 and 225
+clear;
+clc;
+
+//Given Data
+
+IDSS=10D-3;//drain saturation current in amperes
+VP=6;//pinch-off voltage in volts
+VGS=-3;//gate to source voltage in volts
+
+//Solution
+
+disp("(i)");
+ID=IDSS*(1-VGS/(-VP))^2;//drain current for given VGS in amperes
+printf("ID = %.1f mA",ID*10^3);
+
+disp("(ii)");
+gm0=-2*IDSS/(-VP);//transconductance for VGS=0 Volts in Siemens
+printf("gm0 = %.2f mS",gm0*10^3);
+
+disp("(iii)");
+gm=gm0*(1-VGS/(-VP));//transconductance for given VGS in Siemens
+printf("gm = %.2f mS",gm*10^3);
diff --git a/2882/CH7/EX7.4/Ex7_4.sce b/2882/CH7/EX7.4/Ex7_4.sce new file mode 100755 index 000000000..8cf0c7c22 --- /dev/null +++ b/2882/CH7/EX7.4/Ex7_4.sce @@ -0,0 +1,15 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 225
+clear;
+clc;
+
+//Given Data
+
+IDSS=15D-3;//drain saturation current in amperes
+gm0=5D-3;//transconductance for VGS=0 Volts in Siemens
+gm=2.5D-3;//transconductance in Siemens
+
+//Solution
+
+ID=IDSS*(gm/gm0)^2;//drain current in amperes
+printf("ID = %.2f mA",ID*10^3);
diff --git a/2882/CH7/EX7.5/Ex7_5.sce b/2882/CH7/EX7.5/Ex7_5.sce new file mode 100755 index 000000000..f491488ab --- /dev/null +++ b/2882/CH7/EX7.5/Ex7_5.sce @@ -0,0 +1,40 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 227
+clear;
+clc;
+
+//Given Data
+//Figure 7.14
+
+VDD=15;//drain supply voltage in volts
+IDSS=15D-3;//drain saturation current in amperes
+VP=-6;//pinchoff voltage in volts
+RD=1D3;//drain resistance in ohms
+RG=2D6;//gate resistance in ohms
+VGG=1.5;//gate supply voltage in volts
+
+//Solution
+
+disp("(i)");
+VGS_Q=-VGG;//quiscent gate to source voltage in volts (since gate current is zero and drop across RG=0 Volts)
+printf("VGS_Q = %.1f Volts",VGS_Q);
+
+disp("(ii)");
+IDQ=IDSS*(1-VGS_Q/VP)^2;//quiscent drain current in amperes
+printf("IDQ = %.3f mA",IDQ*10^3);
+
+disp("(iii)");
+VDS=VDD-IDQ*RD;//drain to source voltage in volts
+printf("VDS = %.3f Volts",VDS);
+
+disp("(iv)");
+VD=VDS;//drain to ground voltage in volts (since source is grounded)
+printf("VD = %.3f Volts",VD);
+
+disp("(v)");
+VG=VGS_Q;//gate to ground voltage in volts (since source is grounded)
+printf("VG = %.1f Volts",VG);
+
+disp("(vi)");
+VS=0;//source to ground voltage in volts (since source is grounded)
+printf("VS = %d Volts",VS);
diff --git a/2882/CH7/EX7.6/Ex7_6.sce b/2882/CH7/EX7.6/Ex7_6.sce new file mode 100755 index 000000000..318d00d59 --- /dev/null +++ b/2882/CH7/EX7.6/Ex7_6.sce @@ -0,0 +1,45 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 229
+clear;
+clc;
+
+//Given Data
+//Figure 7.16
+
+VDD=15;//drain supply voltage in volts
+IDSS=10D-3;//drain saturation current in amperes
+VP=-6;//pinchoff voltage in volts
+RD=1D3;//drain resistance in ohms
+RG=2D6;//gate resistance in ohms
+RS=1D3;//source resistance in ohms
+
+//Solution
+
+disp("(i)");
+ID_A=5D-3;ID_B=3D-3;//assuming two currents below and above the characteristic curve
+VGS_A=ID_A*RS;VGS_B=ID_B*RS;//calculating corresponding gate to source voltages in volts
+//constructing a line joining A and B. It intersects characteristic curve at Q point VGS_Q
+VGS_Q=-3.2;//quiscent gate to source voltage in volts (solved using characteristic graph)
+printf("VGS_Q = %.1f Volts",VGS_Q);
+
+disp("(ii)");
+IDQ=-VGS_Q/RS;//quiscent drain current in amperes
+printf("IDQ = %.1f mA",IDQ*10^3);
+
+disp("(iii)");
+VDS=VDD-IDQ*(RD+RS);//drain to source voltage in volts
+printf("VDS = %.1f Volts",VDS);
+
+disp("(iv)");
+VS=IDQ*RS;//source to ground voltage in volts
+printf("VS = %.1f Volts",VS);
+
+disp("(v)");
+VG=0;//gate to ground voltage in volts (since gate current is almost zero,drop across RG is zero)
+printf("VG = %d Volts",VG);
+
+disp("(vi)");
+VD=VDD-IDQ*RD;//drain to ground voltage in volts (since source is grounded)
+printf("VD = %.1f Volts",VD);
+
+//error in calculations in textbook as values are not taken as per the figure
diff --git a/2882/CH7/EX7.7/Ex7_7.sce b/2882/CH7/EX7.7/Ex7_7.sce new file mode 100755 index 000000000..728e8944a --- /dev/null +++ b/2882/CH7/EX7.7/Ex7_7.sce @@ -0,0 +1,39 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 230 and 231
+clear;
+clc;
+
+//Given Data
+//Figure 7.18 and 7.19
+
+VDD=18;//drain supply voltage in volts
+IDSS=12D-3;//drain saturation current in amperes
+VP=-2;//pinchoff voltage in volts
+RD=1172;//drain resistance in ohms
+RS=1028;//source resistance in ohms
+VSS=9;//source supply voltage in volts
+
+//Solution
+
+disp("(i)");
+VGS_a=9;//for ID=0 mA VGS=VSS volts
+ID_a=8.754D-3;//for VGS=0 volts ID=VSS/RS amperes0
+//a load line is constructed using these values and the intersection with charecteristic curve gives Q point
+IDQ=9D-3;//quiscent drain current found graphically in amperes
+printf("IDQ = %d mA",IDQ*10^3);
+
+disp("(ii)");
+VGS_Q=-0.25;//quiscent gate to source voltage in volts found graphically
+printf("VGS_Q = %.2f Volts",VGS_Q);
+
+disp("(iii)");
+VDS=VDD-IDQ*(RD+RS)+VSS;//drain to source voltage in volts
+printf("VDS = %.1f Volts",VDS);
+
+disp("(iv)");
+VD=VDD-IDQ*RD;//drain to ground voltage in volts (since source is grounded)
+printf("VD = %.2f Volts",VD);
+
+disp("(v)");
+VS=VD-VDS;//source to ground voltage in volts
+printf("VS = %.2f Volts",VS);
diff --git a/2882/CH7/EX7.8/Ex7_8.sce b/2882/CH7/EX7.8/Ex7_8.sce new file mode 100755 index 000000000..6faeab47d --- /dev/null +++ b/2882/CH7/EX7.8/Ex7_8.sce @@ -0,0 +1,45 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 232,233 and 234
+clear;
+clc;
+
+//Given Data
+//Figure 7.23 and 7.24
+
+VDD=18;//drain supply voltage in volts
+IDSS=10D-3;//drain saturation current in amperes
+VP=-5;//pinchoff voltage in volts
+RD=1.5D3;//drain resistance in ohms
+RS=1D3;//source resistance in ohms
+R1=1.5D6;//divider network resistance R1 in ohms
+R2=180D3;//divider network resistance R2 in ohms
+C1=5D-6;//gate coupling capacitance in farads
+C2=25D-6;//source bypass capacitance in farads
+C3=15D-6;//drain coupling capacitance in farads
+
+//Solution
+
+disp("(i)");
+VG=VDD*R2/(R1+R2);//gate to ground voltage in volts
+VGS_a=1.93;//for ID=0 mA VGS=VSS volts
+ID_a=1.93D-3;//for VGS=0 volts ID=VG/RS amperes0
+//a load line is constructed using these values and the intersection with charecteristic curve gives Q point
+IDQ=3.64D-3;//quiscent drain current found graphically in amperes
+printf("IDQ = %.2f mA",IDQ*10^3);
+
+disp("(ii)");
+VGS_Q=-1.85;//quiscent gate to source voltage in volts found graphically
+printf("VGS_Q = %.2f Volts",VGS_Q);
+
+disp("(iii)");
+VD=VDD-IDQ*RD;//drain to ground voltage in volts (since source is grounded)
+printf("VD = %.2f Volts",VD);
+
+disp("(iv)");
+VS=IDQ*RS;//source to ground voltage in volts
+printf("VS = %.2f Volts",VS);
+
+disp("(v)");
+VDS=VDD-IDQ*(RD+RS);//drain to source voltage in volts
+printf("VDS = %.1f Volts",VDS);
+
diff --git a/2882/CH7/EX7.9/Ex7_9.sce b/2882/CH7/EX7.9/Ex7_9.sce new file mode 100755 index 000000000..a4b40d2e5 --- /dev/null +++ b/2882/CH7/EX7.9/Ex7_9.sce @@ -0,0 +1,15 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 237
+clear;
+clc;
+
+//Given Data
+
+gm=5D-3;//transconductance in Siemens
+RD=1D3;//drain resistance in ohms
+rd=7D3;//AC drain resistance in ohms
+
+//Solution
+
+GV=gm*RD*rd/(RD+rd);//voltage gain
+printf("GV = %.3f",GV);
diff --git a/2882/CH8/EX8.1/Ex8_1.sce b/2882/CH8/EX8.1/Ex8_1.sce new file mode 100755 index 000000000..aea1703ce --- /dev/null +++ b/2882/CH8/EX8.1/Ex8_1.sce @@ -0,0 +1,14 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 267
+clear;
+clc;
+
+//Given Data
+
+VCC=15;//battery voltage in volts
+P_OUT=5;//output power in watts
+
+//Solution
+
+IC_MAX=P_OUT/VCC;//maximum collector current in amperes
+printf("Maximum collector current IC = %d mA",IC_MAX*10^3);
diff --git a/2882/CH8/EX8.10/Ex8_10.sce b/2882/CH8/EX8.10/Ex8_10.sce new file mode 100755 index 000000000..aac1c7cf1 --- /dev/null +++ b/2882/CH8/EX8.10/Ex8_10.sce @@ -0,0 +1,16 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 288
+clear;
+clc;
+
+//Given Data
+
+VCC=12;//collector supply voltage in volts
+RL=220;//load resistance in ohms
+
+//Solution
+
+PL_max=(VCC/RL)^2*RL/2;//maximum load power in watts
+Pin=VCC*VCC/RL;//power delivered to load in watts
+e=PL_max/Pin;//efficiency of amplifier
+printf("Efficiency of the amplifier η = %.f %%",e*100);
diff --git a/2882/CH8/EX8.11/Ex8_11.sce b/2882/CH8/EX8.11/Ex8_11.sce new file mode 100755 index 000000000..c25af3232 --- /dev/null +++ b/2882/CH8/EX8.11/Ex8_11.sce @@ -0,0 +1,14 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 289
+clear;
+clc;
+
+//Given Data
+
+VCC=12;//collector supply voltage in volts
+RL=12;//load resistance in ohms
+
+//Solution
+
+PL_max=(VCC/RL)^2*RL/2;//power developed in watts
+printf("Maximum value of load power = %.f Watts",PL_max);
diff --git a/2882/CH8/EX8.12/Ex8_12.sce b/2882/CH8/EX8.12/Ex8_12.sce new file mode 100755 index 000000000..4caa99925 --- /dev/null +++ b/2882/CH8/EX8.12/Ex8_12.sce @@ -0,0 +1,16 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 289 and 290
+clear;
+clc;
+
+//Given Data
+
+VCC=12;//collector supply voltage in volts
+RL=16;//load resistance of loudspeaker in ohms
+Pmax=1;//input power of loudspeaker
+VCE_sat=0.7;//collector to emitter saturation voltage in volts
+
+//Solution
+
+k=(VCC-VCE_sat)/sqrt(2*RL*Pmax);//turns ratio
+printf("Turns ratio η = %.3f or %.f turns",k,k);
diff --git a/2882/CH8/EX8.13/Ex8_13.sce b/2882/CH8/EX8.13/Ex8_13.sce new file mode 100755 index 000000000..56850064b --- /dev/null +++ b/2882/CH8/EX8.13/Ex8_13.sce @@ -0,0 +1,20 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 290
+clear;
+clc;
+
+//Given Data
+
+VCC=12;//collector supply voltage in volts
+RL=16;//load resistance of loudspeaker in ohms
+Pmax=1;//input power of loudspeaker
+VCE_sat=0.7;//collector to emitter saturation voltage in volts
+
+//Solution
+
+PCC=4/%pi*Pmax;//supplied power in watts
+P=0.5*(PCC-Pmax);//collector dissipated power in watts
+printf("Supplied power PCC = %.3f Watts\n ",PCC);
+printf("Collector dissipated power = %.3f Watts",P);
+
+//decimal approximations taken here
diff --git a/2882/CH8/EX8.14/Ex8_14.sce b/2882/CH8/EX8.14/Ex8_14.sce new file mode 100755 index 000000000..fd344da72 --- /dev/null +++ b/2882/CH8/EX8.14/Ex8_14.sce @@ -0,0 +1,18 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 290
+clear;
+clc;
+
+//Given Data
+//Figure 8.21
+
+VCC=12;//collector supply voltage in volts
+RL=4;//load resistance in ohms
+Pmax=15;//maximum load power in watts
+IC_max=2.5;//maximum collector current in amperes
+
+//Solution
+
+P1=2/%pi*VCC*IC_max;//power supplied in watts
+e=Pmax/P1;//maximum efficiency of the amplifier
+printf("Maximum efficiency ηmax = %.2f %%",e*100);
diff --git a/2882/CH8/EX8.2/Ex8_2.sce b/2882/CH8/EX8.2/Ex8_2.sce new file mode 100755 index 000000000..68d722080 --- /dev/null +++ b/2882/CH8/EX8.2/Ex8_2.sce @@ -0,0 +1,15 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 267,268 and 269
+clear;
+clc;
+
+//Given Data
+
+p_out=32;//output power of speaker in watts
+Z_speaker=8;//impedance of speaker in ohms
+
+//Solution
+
+v_out=sqrt(p_out*Z_speaker);//output a.c. voltage in volts
+i_out=v_out/Z_speaker;//output a.c. current in amperes
+printf("The a.c. output voltage V = %d Volts\n The a.c. output current I = %d Amperes",v_out,i_out);
diff --git a/2882/CH8/EX8.3/Ex8_3.sce b/2882/CH8/EX8.3/Ex8_3.sce new file mode 100755 index 000000000..c13eb0b14 --- /dev/null +++ b/2882/CH8/EX8.3/Ex8_3.sce @@ -0,0 +1,14 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 271 and 272
+clear;
+clc;
+
+//Given Data
+
+k=10;//turn ratio of transformer
+RL=8;//load resistance in ohms
+
+//Solution
+
+RL_eq=k^2*RL;//equivalent resistance at primary in ohms
+printf("RL'' = %d ohms",RL_eq);
diff --git a/2882/CH8/EX8.4/Ex8_4.sce b/2882/CH8/EX8.4/Ex8_4.sce new file mode 100755 index 000000000..e6a22207f --- /dev/null +++ b/2882/CH8/EX8.4/Ex8_4.sce @@ -0,0 +1,14 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 272
+clear;
+clc;
+
+//Given Data
+
+RL=8;//load resistance in ohms
+RL_eq=5D3;//equivalent resistance at primary in ohms
+
+//Solution
+
+k=sqrt(RL_eq/RL);//turns ratio N1/N2
+printf("N1:N2 = %d:1",k);
diff --git a/2882/CH8/EX8.5/Ex8_5.sce b/2882/CH8/EX8.5/Ex8_5.sce new file mode 100755 index 000000000..eb12e5549 --- /dev/null +++ b/2882/CH8/EX8.5/Ex8_5.sce @@ -0,0 +1,38 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 277,278 and 279
+clear;
+clc;
+
+//Given Data
+//Figure 8.13
+
+VCC=20;//collector supply voltage in volts
+RC=270;//collector resistance in ohms
+RE=150;//emitter resistance in ohms
+R1=3.3D3;//divider network resistance R1 in ohms
+R2=1.5D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+B=100;//DC CE current gain beta
+RL=470;//load resistance in ohms
+C1=15D-6;//input coupling capacitance in farads
+C2=15D-6;//output coupling capacitance in farads
+
+//Solution
+
+VB=VCC*R2/(R1+R2);//base to ground voltage in volts
+VE=VB-VBE;//emitter to ground voltage in volts
+IE=VE/RE;//emitter current in amperes
+ICQ=IE;//neglecting base current, collector current is equal to emitter current in amperes
+VC=VCC-ICQ*RC;//collector to ground voltage in volts
+VCEQ=VC-VE;//collector to emitter quiscent voltage in volts
+PD=VCEQ*ICQ;//power dissipation in watts
+RL_dash=RC*RL/(RC+RL);//equivalent a.c. load resistance in ohms
+IC_sat=ICQ+VCEQ/RL_dash;//saturation collector current in amperes
+VCE_cutoff=VCEQ+ICQ*RL_dash;//cutoff collector to emitter voltage in volts
+Pout=0.5*ICQ^2*RL_dash;//output a.c. power in watts
+e=Pout/VCC/ICQ;//efficiency of circuit = Pout/Pin(dc)
+printf("(a) The minimum transistor power rating required PD = %.3f Watts\n ",PD);
+printf("(b) AC output power Pout = %d milli-Watts\n ",Pout*10^3);
+printf("(c) Efficiency of the amplifier η = %.2f\n ",e);
+
+//decimal approximation taken here in efficiency
diff --git a/2882/CH8/EX8.6/Ex8_6.sce b/2882/CH8/EX8.6/Ex8_6.sce new file mode 100755 index 000000000..9fec614a8 --- /dev/null +++ b/2882/CH8/EX8.6/Ex8_6.sce @@ -0,0 +1,31 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 279
+clear;
+clc;
+
+//Given Data
+//Figure 8.13
+
+VCC=20;//collector supply voltage in volts
+RC=270;//collector resistance in ohms
+RE=150;//emitter resistance in ohms
+R1=3.3D3;//divider network resistance R1 in ohms
+R2=1.5D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+B=100;//DC CE current gain beta
+RL=470;//load resistance in ohms
+C1=15D-6;//input coupling capacitance in farads
+C2=15D-6;//output coupling capacitance in farads
+
+//Solution
+
+VB=VCC*R2/(R1+R2);//base to ground voltage in volts
+VE=VB-VBE;//emitter to ground voltage in volts
+IE=VE/RE;//emitter current in amperes
+ICQ=IE;//neglecting base current, collector current is equal to emitter current in amperes
+VC=VCC-ICQ*RC;//collector to ground voltage in volts
+VCEQ=VC-VE;//collector to emitter quiscent voltage in volts
+RL_dash=RC*RL/(RC+RL);//equivalent a.c. load resistance in ohms
+VCEQ_midpt=(VCEQ+ICQ*RL_dash)/2;//collector to emitter voltage in Q point is set at midpoint of load line
+Pout_max=0.5*VCEQ_midpt^2/RL_dash;//maximum output power for amplifier
+printf("Maximum value of load power Pout(max) = %d milli-Watts",Pout_max*10^3);
diff --git a/2882/CH8/EX8.7/Ex8_7.sce b/2882/CH8/EX8.7/Ex8_7.sce new file mode 100755 index 000000000..ac6a15a83 --- /dev/null +++ b/2882/CH8/EX8.7/Ex8_7.sce @@ -0,0 +1,27 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 279 and 280
+clear;
+clc;
+
+//Given Data
+//Figure 8.15
+
+VCC=25;//collector supply voltage in volts
+RL=25;//load collector resistance in ohms
+RB=1.5D3;//base resistance in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+B=50;//DC CE current gain beta
+Iin=12D-3;//input peak current in amperes
+
+//Solution
+
+IBQ=(VCC-VBE)/RB;//base quiscent current in amperes
+ICQ=B*IBQ;//collector quiscent current in amperes
+VCEQ=VCC-ICQ*RL;//quiscent collector to emitter voltage in volts
+Ic_p=B*Iin;//peak collector current swing in amperes
+Pout_ac=Ic_p^2*RL/2;//output a.c. power in watts
+Pin_dc=VCC*ICQ;//input d.c. power in watts
+e=Pout_ac/Pin_dc;//efficiency of amplifier
+printf("(a) Input power = %.2f Watts\n ",Pin_dc);
+printf("(b) Output power = %.1f Watts\n ",Pout_ac);
+printf("(c) Efficiency of the amplifier η = %.2f %%\n ",e*100);
diff --git a/2882/CH8/EX8.8/Ex8_8.sce b/2882/CH8/EX8.8/Ex8_8.sce new file mode 100755 index 000000000..0682ca6c5 --- /dev/null +++ b/2882/CH8/EX8.8/Ex8_8.sce @@ -0,0 +1,25 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 288
+clear;
+clc;
+
+//Given Data
+
+vin_p=2;//input signal amplitude in volts
+fin=50;//input signal frequency in hertz
+I1=10;I2=1.5;I3=0.70;I4=0.3;//input current nth harmonic's amplitude in amperes
+
+//Solution
+
+D2=I2/I1;//second harmonic distortion
+D3=I3/I1;//third harmonic distortion
+D4=I4/I1;//fourth harmonic distortion
+disp("(a)");
+printf("Second harmonic distortion D2 = %.f %%\n ",D2*100);
+printf("Third harmonic distortion D3 = %.f %%\n ",D3*100);
+printf("Fourth harmonic distortion D4 = %.f %%\n ",D4*100);
+
+D=sqrt(D2^2+D3^2+D4^2);//distortion factor
+P=D^2;//percentage increase in power
+disp("(b)");
+printf("Percentage increase in power = %.2f %%",P*100);
diff --git a/2882/CH8/EX8.9/Ex8_9.sce b/2882/CH8/EX8.9/Ex8_9.sce new file mode 100755 index 000000000..405dea16a --- /dev/null +++ b/2882/CH8/EX8.9/Ex8_9.sce @@ -0,0 +1,15 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 8 Power Amplifiers Pg no. 288
+clear;
+clc;
+
+//Given Data
+//Figure 8.23
+
+VCC=25;//collector supply voltage in volts
+RL=220;//load resistance in ohms
+
+//Solution
+
+PCC=VCC^2/RL;//power developed in watts
+printf("Power developed in amplifier PCC = %.2f Watts",PCC);
diff --git a/2882/CH9/EX9.1/Ex9_1.sce b/2882/CH9/EX9.1/Ex9_1.sce new file mode 100755 index 000000000..40ceebf5e --- /dev/null +++ b/2882/CH9/EX9.1/Ex9_1.sce @@ -0,0 +1,62 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 299
+clear;
+clc;
+
+//Solution
+disp("(i)");
+Gp1=200;//power gain
+Gp_dB1=10*log10(Gp1);//power gain in decibles
+printf("Gp(dB) = %.2f dB",Gp_dB1);
+disp("(ii)");
+Gp2=100;//power gain
+Gp_dB2=10*log10(Gp2);//power gain in decibles
+printf("Gp(dB) = %.f dB",Gp_dB2);
+disp("(iii)");
+Gp3=50;//power gain
+Gp_dB3=10*log10(Gp3);//power gain in decibles
+printf("Gp(dB) = %.2f dB",Gp_dB3);
+disp("(iv)");
+Gp4=10;//power gain
+Gp_dB4=10*log10(Gp4);//power gain in decibles
+printf("Gp(dB) = %.f dB",Gp_dB4);
+disp("(v)");
+Gv5=20;//voltage gain
+Gv_dB5=20*log10(Gv5);//voltage gain in decibles
+printf("Gv(dB) = %.f dB",Gv_dB5);
+disp("(vi)");
+Gv6=0.707;//voltage gain
+Gv_dB6=20*log10(Gv6);//voltage gain in decibles
+printf("Gv(dB) = %.f dB",Gv_dB6);
+disp("(vii)");
+Gp7=0.5;//power gain
+Gp_dB7=10*log10(Gp7);//power gain in decibles
+printf("Gp(dB) = %.f dB",Gp_dB7);
+disp("(viii)");
+Gv8=0.25;//voltage gain
+Gv_dB8=20*log10(Gv8);//voltage gain in decibles
+printf("Gv(dB) = %.f dB",Gv_dB8);
+disp("(ix)");
+Gv9=0.125;//voltage gain
+Gv_dB9=20*log10(Gv9);//voltage gain in decibles
+printf("Gv(dB) = %.f dB",Gv_dB9);
+disp("(x)");
+Gv10=0.0625;//voltage gain
+Gv_dB10=20*log10(Gv10);//voltage gain in decibles
+printf("Gv(dB) = %.f dB",Gv_dB10);
+disp("(xi)");
+Gv11=2;//voltage gain
+Gv_dB11=20*log10(Gv11);//voltage gain in decibles
+printf("Gv(dB) = %.f dB",Gv_dB11);
+disp("(xii)");
+Gv12=4;//voltage gain
+Gv_dB12=20*log10(Gv12);//voltage gain in decibles
+printf("Gv(dB) = %.f dB",Gv_dB12);
+disp("(xiii)");
+Gv13=8;//voltage gain
+Gv_dB13=20*log10(Gv13);//voltage gain in decibles
+printf("Gv(dB) = %.f dB",Gv_dB13);
+disp("(xiv)");
+Gv14=16;//voltage gain
+Gv_dB14=20*log10(Gv14);//voltage gain in decibles
+printf("Gv(dB) = %.f dB",Gv_dB14);
diff --git a/2882/CH9/EX9.10/Ex9_10.sce b/2882/CH9/EX9.10/Ex9_10.sce new file mode 100755 index 000000000..0354e96df --- /dev/null +++ b/2882/CH9/EX9.10/Ex9_10.sce @@ -0,0 +1,37 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 313 and 314
+clear;
+clc;
+
+//Given
+
+VCC=12;//collector supply voltage in volts
+RC=2.7D3;//collector resistance in ohms
+RE=560;//emitter resistance in ohms
+R1=15D3;//divider network resistance R1 in ohms
+R2=5.6D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+VT=25D-3;//voltage equivalent of temperature in volts
+B=100;//DC CE current gain bet
+Rs=600;//source internal impedance in ohms
+RL=2.7D3;//load resistance in ohms
+Cbe=15D-12;//base to emitter capacitance in farads
+Cbc=2D-12;//base to collector capacitance in farads
+Cwi=5D-12;//wiring capacitance in farads
+f=[1.19D6 2.38D6 4.76D6];//frequency values in hertz
+
+//Solution
+
+VB=VCC*R2/(R1+R2);//base to ground voltage in volts
+VE=VB-VBE;//emitter to ground voltage in volts
+IE=VE/RE;//emitter current in amperes
+re=VT/IE;//a.c. emitter resistance in ohms
+RTH=1/(1/Rs+1/R1+1/R2+1/B/re);//thevenised input resistance in ohms
+Gv_mid=RC*RL/(RC+RL)/re;//midrange gain of amplifier
+Cin_miller=Cbc*(1+Gv_mid);//input miller capacitance in farads
+C=Cwi+Cbe+Cin_miller;//total input capacitance in farads
+
+for i=1:3
+ phi=atand(2*%pi*RTH*f(i)*C);
+ printf("At f=%.2f MHz ɸ = %.2f°\n\n ",f(i)/10^6,phi);
+end
diff --git a/2882/CH9/EX9.11/Ex9_11.sce b/2882/CH9/EX9.11/Ex9_11.sce new file mode 100755 index 000000000..14b220358 --- /dev/null +++ b/2882/CH9/EX9.11/Ex9_11.sce @@ -0,0 +1,40 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 314 and 315
+clear;
+clc;
+
+//Given
+
+VCC=12;//collector supply voltage in volts
+RC=2.7D3;//collector resistance in ohms
+RE=560;//emitter resistance in ohms
+R1=15D3;//divider network resistance R1 in ohms
+R2=5.6D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+VT=25D-3;//voltage equivalent of temperature in volts
+B=100;//DC CE current gain bet
+Rs=600;//source internal impedance in ohms
+RL=2.7D3;//load resistance in ohms
+Cbe=15D-12;//base to emitter capacitance in farads
+Cbc=2D-12;//base to collector capacitance in farads
+Cwo=1D-12;//output wiring capacitance in farads
+f=[1.19D6 2.38D6 4.76D6];//frequency values in hertz
+
+//Solution
+
+VB=VCC*R2/(R1+R2);//base to ground voltage in volts
+VE=VB-VBE;//emitter to ground voltage in volts
+IE=VE/RE;//emitter current in amperes
+re=VT/IE;//a.c. emitter resistance in ohms
+RTH=1/(1/Rs+1/R1+1/R2+1/B/re);//thevenised input resistance in ohms
+Gv_mid=RC*RL/(RC+RL)/re;//midrange gain of amplifier
+Cout_miller=Cbc*(1+Gv_mid)/Gv_mid;//output miller capacitance in farads
+Cout_dash=Cout_miller+Cwo;//total output capacitance in farads
+RL_dash=RL*RC/(RL+RC);//total output resistance in ohms
+printf("The high frequency input R-C network consists of\n ");
+printf("R = %.2f kilo-ohms\n ",RL_dash/10^3);
+printf("C = %.f pF\n\n ",Cout_dash*10^12);
+
+fc=1/2/%pi/RL_dash/Cout_dash;//critical frequency in hertz
+printf("fc = %.1f MHz",fc/10^6);
+
diff --git a/2882/CH9/EX9.12/Ex9_12.sce b/2882/CH9/EX9.12/Ex9_12.sce new file mode 100755 index 000000000..63b8d4a6a --- /dev/null +++ b/2882/CH9/EX9.12/Ex9_12.sce @@ -0,0 +1,15 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 316
+clear;
+clc;
+
+//Given
+
+fch1=5D3;//higher cut-off frequency in hertz
+fcl1=20;//lower cut-off frequency in hertz
+
+//Solution
+
+BW=fch1-fcl1;//bandwidth in hertz
+printf("BW = %.f Hz",BW);
+
diff --git a/2882/CH9/EX9.13/Ex9_13.sce b/2882/CH9/EX9.13/Ex9_13.sce new file mode 100755 index 000000000..20fa3a420 --- /dev/null +++ b/2882/CH9/EX9.13/Ex9_13.sce @@ -0,0 +1,14 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 316
+clear;
+clc;
+
+//Given
+
+fT=150D6;//transition frequency in hertz
+Gv_mid=25;//midband voltage gain
+
+//Solution
+
+BW=fT/Gv_mid;//bandwidth in hertz
+printf("BW = %.f MHz",BW/10^6);
diff --git a/2882/CH9/EX9.14/Ex9_14.sce b/2882/CH9/EX9.14/Ex9_14.sce new file mode 100755 index 000000000..ffc1f54ff --- /dev/null +++ b/2882/CH9/EX9.14/Ex9_14.sce @@ -0,0 +1,22 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 318 and 319
+clear;
+clc;
+
+//Given
+//Figure 9.31
+
+VGS=12;//gate to source voltage in volts
+IGSS=40D-9;//gate saturation current in amperes
+VDD=12;//drain supply voltage in volts
+RD=6.8D3;//drain resistance in ohms
+RG=15D6;//gate resistance in ohms
+Cin=0.001D-6;//input coupling capacitance in farads
+Cout=0.001D-6;//output coupling capacitance in farads
+
+//Solution
+
+Rin_gate=VGS/IGSS;//gate input resistance in ohms
+Rin=Rin_gate*RG/(Rin_gate+RG);//input resistance in ohms
+fc=1/(2*%pi*Rin*Cin);//cutoff frequency in hertz
+printf("Cutoff frequency for input RC network fc = %.2f Hz",fc);
diff --git a/2882/CH9/EX9.15/Ex9_15.sce b/2882/CH9/EX9.15/Ex9_15.sce new file mode 100755 index 000000000..3686550ea --- /dev/null +++ b/2882/CH9/EX9.15/Ex9_15.sce @@ -0,0 +1,24 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 319
+clear;
+clc;
+//Given
+//Figure 9.31
+//Given data is from Fig 9.31
+VGS=12;//gate to source voltage in volts
+IGSS=40D-9;//gate saturation current in amperes
+RD=6.8D3;//drain resistance in ohms
+RG=15D6;//gate resistance in ohms
+Cout=0.001D-6;//output coupling capacitance in farads
+
+//Solution
+
+Rin_gate=VGS/IGSS;//gate input resistance in ohms
+Rin=Rin_gate*RG/(Rin_gate+RG);//input resistance in ohms
+RL=Rin;//load resistance is input resistance of next stage in ohms
+CC2=Cout;//output RC network capacitance is equal to Cout
+//The following equation is given as Equation 9.45 in textbook
+fc=1/(2*%pi*(RD+RL)*CC2);//cutoff frequency in hertz
+printf("Critical frequency for output RC network fc'' = %.2f Hz",fc);
+
+//Error in decimal approximation in textbook.
diff --git a/2882/CH9/EX9.16/Ex9_16.sce b/2882/CH9/EX9.16/Ex9_16.sce new file mode 100755 index 000000000..bb779841c --- /dev/null +++ b/2882/CH9/EX9.16/Ex9_16.sce @@ -0,0 +1,19 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 320
+clear;
+clc;
+
+//Given
+
+Ciss=5D-12;//FET input capacitance in farads
+Crss=0.5D-12;//FET reverse transfer capacitance in farads
+Coss=2D-12;//FET output capacitance in farads
+
+//Solution
+
+Cgd=Crss;//gate to drain capacitance in farads
+Cgs=Ciss-Crss;//gate to source capacitance in farads
+Cds=Coss-Crss;//drain to source capacitance in farads
+printf("Cgd = %.1f pF\n ",Cgd*10^12);
+printf("Cgs = %.1f pF\n ",Cgs*10^12);
+printf("Cds = %.1f pF\n ",Cds*10^12);
diff --git a/2882/CH9/EX9.17/Ex9_17.sce b/2882/CH9/EX9.17/Ex9_17.sce new file mode 100755 index 000000000..3aa2fd37e --- /dev/null +++ b/2882/CH9/EX9.17/Ex9_17.sce @@ -0,0 +1,29 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 321
+clear;
+clc;
+
+//Given
+//Figure 9.35
+
+Ciss=6D-12;//FET input capacitance in farads
+Crss=2.5D-12;//FET reverse transfer capacitance in farads
+gm=7500D-6;//transconductance in Siemens
+Cwi=2D-12;//wiring capacitance in farads
+VDD=12;//drain supply voltage in volts
+Rs=50;//source resistance in ohms
+RG=15D6;//gate resistance in ohms
+RD=1.2D3;//drain resistance in ohms
+RS=1D3;//source resistance in ohms
+RL=15D6;//load resistance in ohms
+
+//Solution
+
+Cgd=Crss;//gate to drain capacitance in farads
+Cgs=Ciss-Crss;//gate to source capacitance in farads
+RL_dash=RD*RL/(RD+RL);//total load resistance in ohms
+GV=gm*RL_dash;//total voltage gain
+Cin_miller=Cgd*(1+GV);//input miller capacitance in farads
+Cin_dash=Cgs+Cwi+Cin_miller;//total input capacitance in farads
+fc=1/(2*%pi*Rs*Cin_dash);//cutoff frequency in hertz
+printf("Cut-off frequency fc = %.2f MHz\n ",fc/10^6);
diff --git a/2882/CH9/EX9.18/Ex9_18.sce b/2882/CH9/EX9.18/Ex9_18.sce new file mode 100755 index 000000000..a881295ea --- /dev/null +++ b/2882/CH9/EX9.18/Ex9_18.sce @@ -0,0 +1,30 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 321 and 322
+clear;
+clc;
+
+//Given
+//Figure 9.35
+
+Ciss=6D-12;//FET input capacitance in farads
+Crss=2.5D-12;//FET reverse transfer capacitance in farads
+gm=5000D-6;//transconductance in Siemens
+VDD=12;//drain supply voltage in volts
+Rs=50;//source resistance in ohms
+RG=15D6;//gate resistance in ohms
+RD=1.2D3;//drain resistance in ohms
+RS=1D3;//source resistance in ohms
+RL=15D6;//load resistance in ohms
+
+//Solution
+
+Cgd=Crss;//gate to drain capacitance in farads
+Cgs=Ciss-Crss;//gate to source capacitance in farads
+RL_dash=RD*RL/(RD+RL);//total load resistance in ohms
+GV=gm*RL_dash;//total voltage gain
+Cin_miller=Cgd*(1+GV);//input miller capacitance in farads
+Cin_dash=Cgs+Cin_miller;//total input capacitance in farads
+fc=1/(2*%pi*Rs*Cin_dash);//cutoff frequency in hertz
+printf("Critical frequency fc = %.2f MHz\n ",fc/10^6);
+
+//calculation error in textbook
diff --git a/2882/CH9/EX9.19/Ex9_19.sce b/2882/CH9/EX9.19/Ex9_19.sce new file mode 100755 index 000000000..855e9daf3 --- /dev/null +++ b/2882/CH9/EX9.19/Ex9_19.sce @@ -0,0 +1,29 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 322
+clear;
+clc;
+
+//Given
+//Figure 9.35
+
+Ciss=6D-12;//FET input capacitance in farads
+Crss=2.5D-12;//FET reverse transfer capacitance in farads
+gm=7500D-6;//transconductance in Siemens
+VDD=12;//drain supply voltage in volts
+Rs=50;//source resistance in ohms
+RG=15D6;//gate resistance in ohms
+RD=1.2D3;//drain resistance in ohms
+RS=1D3;//source resistance in ohms
+RL=15D6;//load resistance in ohms
+Cwo=1D-12;//output wiring capacitance in farads
+
+//Solution
+
+Cgd=Crss;//gate to drain capacitance in farads
+Cgs=Ciss-Crss;//gate to source capacitance in farads
+RL_dash=RD*RL/(RD+RL);//total load resistance in ohms
+GV=gm*RL_dash;//total voltage gain
+Cout_miller=Cgd*(1+GV)/GV;//output miller capacitance in farads
+Cout_dash=Cwo+Cout_miller;//total output capacitance in farads
+fc=1/(2*%pi*RL_dash*Cout_dash);//cutoff frequency in hertz
+printf("Critical frequency fc = %.2f MHz\n ",fc/10^6);
diff --git a/2882/CH9/EX9.2/Ex9_2.sce b/2882/CH9/EX9.2/Ex9_2.sce new file mode 100755 index 000000000..52bf61201 --- /dev/null +++ b/2882/CH9/EX9.2/Ex9_2.sce @@ -0,0 +1,21 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 299 and 300
+clear;
+clc;
+
+//Given
+
+Gv=-48;//voltage gain of amplifier
+Cbc=2D-12;//base to collector capacitance in farads
+Cbe=0.5D-12;//base to emitter capacitance in farads
+
+//Solution
+
+Cin_miller=Cbc*(1-Gv);//input miller capacitance in farads
+Cout_miller=Cbc*(1-1/Gv);//output miller capacitance in farads
+disp("(i)");
+printf("Input Miller capacitance Cin(Miller) = %.f pF",Cin_miller*10^12);
+disp("(ii)");
+printf("Output Miller capacitance Cout(Miller) = %.f pF",Cout_miller*10^12);
+
+
diff --git a/2882/CH9/EX9.3/Ex9_3.sce b/2882/CH9/EX9.3/Ex9_3.sce new file mode 100755 index 000000000..9ac97187f --- /dev/null +++ b/2882/CH9/EX9.3/Ex9_3.sce @@ -0,0 +1,19 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 300
+clear;
+clc;
+
+//Given
+
+Gv=-120;//voltage gain of amplifier
+Cbc=2D-12;//base to collector capacitance in farads
+Cbe=0.5D-12;//base to emitter capacitance in farads
+
+//Solution
+
+Cin_miller=Cbc*(1-Gv);//input miller capacitance in farads
+Cout_miller=Cbc*(1-1/Gv);//output miller capacitance in farads
+disp("(i)");
+printf("Input Miller capacitance Cin(Miller) = %.f pF",Cin_miller*10^12);
+disp("(ii)");
+printf("Output Miller capacitance Cout(Miller) = %.f pF",Cout_miller*10^12);
diff --git a/2882/CH9/EX9.4/Ex9_4.sce b/2882/CH9/EX9.4/Ex9_4.sce new file mode 100755 index 000000000..4ed1f6b5c --- /dev/null +++ b/2882/CH9/EX9.4/Ex9_4.sce @@ -0,0 +1,14 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 301
+clear;
+clc;
+
+//Given
+
+Gv_dB=75;//voltage gain of amplifier in dB units
+
+//Solution
+
+Gv=10^(0.1*Gv_dB);//voltage gain magnitude
+printf("P2/P1 = %.f",Gv);
+
diff --git a/2882/CH9/EX9.5/Ex9_5.sce b/2882/CH9/EX9.5/Ex9_5.sce new file mode 100755 index 000000000..0e0946665 --- /dev/null +++ b/2882/CH9/EX9.5/Ex9_5.sce @@ -0,0 +1,23 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 301
+clear;
+clc;
+
+//Given
+
+P_rated=50;//wattage rating of amplifier
+RL=16;//load resistance of speaker in ohms
+Gp_dB=22;//power gain in dB units
+Gv_dB=37;//voltage gain in dB units
+
+//Solution
+
+disp("(i)");
+Pi=P_rated/10^(Gp_dB/10);//input power required in watts
+printf("Pi = %.2f mW",Pi*10^3);
+
+disp("(ii)");
+Vin=sqrt(P_rated*RL)/10^(Gv_dB/20);//input voltage required in volts
+printf("Vin = %.2f mV",Vin*10^3);
+
+//calculation error in textbook as wattage mentioned in question is 50 W and in solution is 37 W
diff --git a/2882/CH9/EX9.6/Ex9_6.sce b/2882/CH9/EX9.6/Ex9_6.sce new file mode 100755 index 000000000..057586484 --- /dev/null +++ b/2882/CH9/EX9.6/Ex9_6.sce @@ -0,0 +1,29 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 307 and 308
+clear;
+clc;
+
+//Given
+
+VCC=15;//collector supply voltage in volts
+RC=2.2D3;//collector resistance in ohms
+RE=470;//emitter resistance in ohms
+R1=33D3;//divider network resistance R1 in ohms
+R2=10D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+B=150;//DC CE current gain beta
+Rs=600;//source internal impedance in ohms
+RL=4.7D3;//load resistance in ohms
+C1=0.1D-6;//input coupling capacitance in farads
+C2=50D-6;//emitter bypass capacitance in farads
+C3=0.1D-6;//output coupling capacitance in farads
+re=4;//a.c. emitter resistance in ohms
+
+//Solution
+
+Rth=1/(1/R1+1/R2+1/Rs);//thevenin resistance at base in ohms
+Rin_emitter=re+Rth/B;//resistance looking into the emitter in ohms
+R=1/(1/Rin_emitter+1/RE);//resistance of the equivalent RC network in ohms
+fc=1/(2*%pi*R*C2);//critical frequency of the bypass network in hertz
+
+printf("critical frequency of the bypass network fc = %d Hz",fc);
diff --git a/2882/CH9/EX9.7/Ex9_7.sce b/2882/CH9/EX9.7/Ex9_7.sce new file mode 100755 index 000000000..36538f50c --- /dev/null +++ b/2882/CH9/EX9.7/Ex9_7.sce @@ -0,0 +1,27 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 308
+clear;
+clc;
+
+//Given
+
+VCC=12;//collector supply voltage in volts
+RE=1D3;//emitter resistance in ohms
+R1=47D3;//divider network resistance R1 in ohms
+R2=15D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+B=100;//DC CE current gain beta
+Rs=1000;//source internal impedance in ohms
+CE=100D-6;//emitter bypass capacitance in farads
+re=11.5;//a.c. emitter resistance in ohms
+
+//Solution
+
+Rth=1/(1/R1+1/R2+1/Rs);//thevenin resistance at base in ohms
+Rin_emitter=re+Rth/B;//resistance looking into the emitter in ohms
+R=1/(1/Rin_emitter+1/RE);//resistance of the equivalent RC network in ohms
+fc=1/(2*%pi*R*CE);//critical frequency of the bypass network in hertz
+
+printf("critical frequency of the bypass network fc = %.2f Hz",fc);
+
+//decimal approximation taken here
diff --git a/2882/CH9/EX9.8/9_8.pdf b/2882/CH9/EX9.8/9_8.pdf Binary files differnew file mode 100755 index 000000000..1fa30fd6c --- /dev/null +++ b/2882/CH9/EX9.8/9_8.pdf diff --git a/2882/CH9/EX9.8/Ex9_8.sce b/2882/CH9/EX9.8/Ex9_8.sce new file mode 100755 index 000000000..93878ed72 --- /dev/null +++ b/2882/CH9/EX9.8/Ex9_8.sce @@ -0,0 +1,35 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 310
+clear;
+clc;
+
+//Given
+
+VCC=15;//collector supply voltage in volts
+RC=2.2D3;//collector resistance in ohms
+RE=470;//emitter resistance in ohms
+R1=33D3;//divider network resistance R1 in ohms
+R2=10D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+B=150;//DC CE current gain beta
+Rs=600;//source internal impedance in ohms
+RL=4.7D3;//load resistance in ohms
+C1=0.1D-6;//input coupling capacitance in farads
+C2=50D-6;//emitter bypass capacitance in farads
+C3=0.1D-6;//output coupling capacitance in farads
+re=4;//a.c. emitter resistance in ohms
+
+//Solution
+
+Rin=1/(1/R1+1/R2+1/(B*re));//thevenised input network resistance in ohms
+fc_input=1/(2*%pi*(Rs+Rin)*C1);//input cutoff frequency in hertz
+Rth=1/(1/R1+1/R2+1/Rs);//thevenised bypass network resistance in ohms
+Rin_emitter=7.7;//resistance looking into the emitter in ohms
+fc_bypass=1/(2*%pi*1/(1/RE+1/Rin_emitter)*C2);//bypass cutoff frequency in hertz
+Rout=RC+RL;//thevenised output network resistance in ohms
+fc_output=1/(2*%pi*Rout*C3);//output cutoff frequency in hertz
+
+s=poly(0,'s')
+F=syslin('c',8*%pi^3*(fc_input*fc_bypass*fc_output)/(s+2*%pi*fc_output)/(s+2*%pi*fc_bypass)/(s+2*%pi*fc_input));
+clf;
+gainplot(F,100,10000,"Bode Plot for given amplifier in Example 9.8");
diff --git a/2882/CH9/EX9.9/Ex9_9.sce b/2882/CH9/EX9.9/Ex9_9.sce new file mode 100755 index 000000000..bae6f259a --- /dev/null +++ b/2882/CH9/EX9.9/Ex9_9.sce @@ -0,0 +1,40 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 9 Frequency Response of Amplifier Pg no. 312 and 313
+clear;
+clc;
+
+//Given
+
+VCC=12;//collector supply voltage in volts
+RC=2.7D3;//collector resistance in ohms
+RE=560;//emitter resistance in ohms
+R1=15D3;//divider network resistance R1 in ohms
+R2=5.6D3;//divider network resistance R2 in ohms
+VBE=0.7;//forward voltage drop of emitter diode in volts
+VT=25D-3;//voltage equivalent of temperature in volts
+B=100;//DC CE current gain bet
+Rs=600;//source internal impedance in ohms
+RL=2.7D3;//load resistance in ohms
+Cbe=15D-12;//base to emitter capacitance in farads
+Cbc=2D-12;//base to collector capacitance in farads
+Cwi=5D-12;//wiring capacitance in farads
+
+
+//Solution
+
+VB=VCC*R2/(R1+R2);//base to ground voltage in volts
+VE=VB-VBE;//emitter to ground voltage in volts
+IE=VE/RE;//emitter current in amperes
+re=VT/IE;//a.c. emitter resistance in ohms
+RTH=1/(1/Rs+1/R1+1/R2+1/B/re);//thevenised input resistance in ohms
+Gv_mid=RC*RL/(RC+RL)/re;//midrange gain of amplifier
+Cin_miller=Cbc*(1+Gv_mid);//input miller capacitance in farads
+C=Cwi+Cbe+Cin_miller;//total input capacitance in farads
+printf("The high frequency input R-C network consists of\n ");
+printf("R = %.2f ohms\n ",RTH);
+printf("C = %.1f pF\n\n ",C*10^12);
+
+fc=1/2/%pi/RTH/C;//critical frequency in hertz
+printf("fc = %.2f MHz",fc/10^6);
+
+//calculation errors in textbook
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