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+//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 170 and 171
+clear;
+clc;
+
+//Given Data
+//Figure 5.30
+
+B=100;//DC CE current gain beta
+VCC=18;//collector supply voltage in volts
+VEE=9;//emitter supply voltage in volts
+VBE=0.7;//forward voltage drop of emitter diode in volts
+RE=30D3;//emitter resistance in ohms
+R=15D3;//base bias resistance in ohms
+RL=15D3;//collector load resistance in ohms
+
+//Solution
+
+disp("(i)");
+IE=(VEE-VBE)/(RE+R/B);//emitter current in amperes
+printf("IE = %.3f mA\n",IE*1000);
+
+disp("(ii)");
+IC=IE;//collector current in amperes
+printf("IE = %.3f mA\n",IC*1000);
+
+disp("(iii)");
+VC=VCC-IC*RL;//collector to groud voltage in volts
+printf("VC = %.2f Volts\n",VC);
+
+disp("(iv)");
+VE=-(IC*R/B+VBE);//emitter to groud voltage in volts
+printf("VE = %.2f Volts\n",VE);
+
+disp("(v)");
+VCE=VC-VE;//collector to emitter voltage in volts
+printf("VCE = %.2f Volts\n",VCE);
+
+disp("(vi)");
+S=(1+R/RE)/(1+R/B/RE);//stability factor S
+printf("S = %.4f\n",S);
+
+//calculations are carried out taking RL=9 kilo-ohm instead of 15 kilo-ohm as in Figure 5.30 in textbook
+//resulting in change in values of VC and VCE