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+//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 230 and 231
+clear;
+clc;
+
+//Given Data
+//Figure 7.18 and 7.19
+
+VDD=18;//drain supply voltage in volts
+IDSS=12D-3;//drain saturation current in amperes
+VP=-2;//pinchoff voltage in volts
+RD=1172;//drain resistance in ohms
+RS=1028;//source resistance in ohms
+VSS=9;//source supply voltage in volts
+
+//Solution
+
+disp("(i)");
+VGS_a=9;//for ID=0 mA VGS=VSS volts
+ID_a=8.754D-3;//for VGS=0 volts ID=VSS/RS amperes0
+//a load line is constructed using these values and the intersection with charecteristic curve gives Q point
+IDQ=9D-3;//quiscent drain current found graphically in amperes
+printf("IDQ = %d mA",IDQ*10^3);
+
+disp("(ii)");
+VGS_Q=-0.25;//quiscent gate to source voltage in volts found graphically
+printf("VGS_Q = %.2f Volts",VGS_Q);
+
+disp("(iii)");
+VDS=VDD-IDQ*(RD+RS)+VSS;//drain to source voltage in volts
+printf("VDS = %.1f Volts",VDS);
+
+disp("(iv)");
+VD=VDD-IDQ*RD;//drain to ground voltage in volts (since source is grounded)
+printf("VD = %.2f Volts",VD);
+
+disp("(v)");
+VS=VD-VDS;//source to ground voltage in volts
+printf("VS = %.2f Volts",VS);