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+//Tested on Windows 7 Ultimate 32-bit
+//Chapter 5 Bipolar Transistor Biasing Pg no. 164 and 165
+clear;
+clc;
+
+//Given Data
+
+IE=1.5D-3;//emitter current in amperes
+VCC=15;//supply voltage in volts
+B=100;//DC CE current gain beta
+VBE=0.7;//forward voltage drop of emitter diode in volts
+
+//Solution
+
+//Approximations
+VR2=VCC/3;//voltage across R2 is 1/3rd of supply voltage
+VRL=VCC/3;//voltage across RL is 1/3rd of supply voltage
+
+VB=VR2;//voltage of base to ground in volts
+VE=VB-VBE;//voltage of emitter to ground in volts
+RE=VE/IE;//emitter resistance in ohms
+I=0.1*IE;//setting voltage divider current as 0.1IE and neglecting base current
+R1_plus_R2=VCC/I;//R1+R2 in ohms
+R2=VR2/VCC*R1_plus_R2;//R2 in ohms
+R1=R1_plus_R2-R2;//R1 in ohms
+
+printf("RE = %.2f kilo-ohms\n",RE/1000);
+printf("R1 = %.2f kilo-ohms\n",R1/1000);
+printf("R2 = %.2f kilo-ohms\n",R2/1000);
+//design is given in Figure E5.10
+//IE for this circuit is 1.40 mA and more accuracy can be obtained by exact equations and eliminating approximations