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Diffstat (limited to '2882/CH7/EX7.3/Ex7_3.sce')
| -rwxr-xr-x | 2882/CH7/EX7.3/Ex7_3.sce | 24 |
1 files changed, 24 insertions, 0 deletions
diff --git a/2882/CH7/EX7.3/Ex7_3.sce b/2882/CH7/EX7.3/Ex7_3.sce new file mode 100755 index 000000000..4565f5f56 --- /dev/null +++ b/2882/CH7/EX7.3/Ex7_3.sce @@ -0,0 +1,24 @@ +//Tested on Windows 7 Ultimate 32-bit
+//Chapter 7 Field Effect Transistors Pg no. 224 and 225
+clear;
+clc;
+
+//Given Data
+
+IDSS=10D-3;//drain saturation current in amperes
+VP=6;//pinch-off voltage in volts
+VGS=-3;//gate to source voltage in volts
+
+//Solution
+
+disp("(i)");
+ID=IDSS*(1-VGS/(-VP))^2;//drain current for given VGS in amperes
+printf("ID = %.1f mA",ID*10^3);
+
+disp("(ii)");
+gm0=-2*IDSS/(-VP);//transconductance for VGS=0 Volts in Siemens
+printf("gm0 = %.2f mS",gm0*10^3);
+
+disp("(iii)");
+gm=gm0*(1-VGS/(-VP));//transconductance for given VGS in Siemens
+printf("gm = %.2f mS",gm*10^3);
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