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-rw-r--r--3636/CH7/EX7.1/Ex7_1.sce21
-rw-r--r--3636/CH7/EX7.1/Ex7_1.txt4
-rw-r--r--3636/CH7/EX7.10/Ex7_10.sce36
-rw-r--r--3636/CH7/EX7.10/Ex7_10.txt4
-rw-r--r--3636/CH7/EX7.2/Ex7_2.sce17
-rw-r--r--3636/CH7/EX7.2/Ex7_2.txt1
-rw-r--r--3636/CH7/EX7.3/Ex7_3.sce13
-rw-r--r--3636/CH7/EX7.3/Ex7_3.txt2
-rw-r--r--3636/CH7/EX7.4/Ex7_4.sce13
-rw-r--r--3636/CH7/EX7.4/Ex7_4.txt1
-rw-r--r--3636/CH7/EX7.5/Ex7_5.sce13
-rw-r--r--3636/CH7/EX7.5/Ex7_5.txt2
-rw-r--r--3636/CH7/EX7.6/Ex7_6.sce24
-rw-r--r--3636/CH7/EX7.6/Ex7_6.txt6
-rw-r--r--3636/CH7/EX7.9/Ex7_9.sce25
-rw-r--r--3636/CH7/EX7.9/Ex7_9.txt4
16 files changed, 186 insertions, 0 deletions
diff --git a/3636/CH7/EX7.1/Ex7_1.sce b/3636/CH7/EX7.1/Ex7_1.sce
new file mode 100644
index 000000000..a14d7a7d9
--- /dev/null
+++ b/3636/CH7/EX7.1/Ex7_1.sce
@@ -0,0 +1,21 @@
+clc;
+clear;
+Nd=5*10^16 //Doping level of n-type silicon in cm^-3
+Nc=2.8*10^19 //in cm^-3
+e=1.6*10^-19 //in J
+phi_B0=1.09 //in eV
+epsilon_r=11.7 //in F/cm
+epsilon_0=8.85*10^-14 //in F/cm
+Const=0.026 //constant for kT/e in V
+
+//Calculation
+phi_n=Const*log(Nc/Nd) //in eV
+Vbi=(phi_B0-phi_n) //in eV
+xn=((2*epsilon_r*epsilon_0*Vbi)/(e*Nd))^0.5
+Emax=(e*Nd*xn)/(epsilon_r*epsilon_0)
+
+mprintf("a) Ideal Schottky barrier height= %0.3f eV\n",phi_n)
+mprintf("b) Built-in potential barrier= %0.3f V\n",Vbi)
+mprintf("c) Space charge width at zero bias= %1.3e cm\n",xn)//The answers vary due to round off error
+mprintf("d) maximum electric field= %2.2e V cm^-1",Emax) //The answers vary due to round off error
+
diff --git a/3636/CH7/EX7.1/Ex7_1.txt b/3636/CH7/EX7.1/Ex7_1.txt
new file mode 100644
index 000000000..fd61cc8dd
--- /dev/null
+++ b/3636/CH7/EX7.1/Ex7_1.txt
@@ -0,0 +1,4 @@
+ a) Ideal Schottky barrier height= 0.165 eV
+b) Built-in potential barrier= 0.925 V
+c) Space charge width at zero bias= 1.548e-05 cm
+d) maximum electric field= 1.20e+05 V cm^-1 \ No newline at end of file
diff --git a/3636/CH7/EX7.10/Ex7_10.sce b/3636/CH7/EX7.10/Ex7_10.sce
new file mode 100644
index 000000000..1863394d2
--- /dev/null
+++ b/3636/CH7/EX7.10/Ex7_10.sce
@@ -0,0 +1,36 @@
+clc;
+clear;
+ni=1.5*10^10 //in cm^-3
+delE_iF=0.0259 //in eV
+delE_cF=0.29 //in eV
+phi_G=4.8 //in eV
+impurity_conc=9.9*10^14 //in cm^-3
+affinity=0.55 //in eV
+Const=0.0259 //constant value for kT in eV
+x=4.05 //electron affinity for silicon in eV
+
+//Calculation
+//a)
+n0=ni*exp(delE_iF/Const) //in cm^-3
+phi_s=x+delE_cF
+
+//b)
+Ptype_conc=impurity_conc-n0 //net concentration of p-type on B side in cm^-3
+delE_iF_Bside=Const*log(Ptype_conc/ni) //in eV
+phi_s_Bside=x+delE_iF_Bside+affinity
+
+//d)
+ni1=8*10^12 //increased ni in cm^-3
+delE_iF1=Const*log(n0/ni1) //in eV
+phi_s1=x+(affinity-delE_iF1)
+
+mprintf("electron doping concentration = %.1e cm^-3\n",n0) //The answer provided in the textbook is wrong
+mprintf("workfuntion of the semiconductor = %.2f eV\n",phi_s)
+mprintf("workfuntion of the semiconductor on B side = %.2f eV\n",phi_s_Bside) //The answer provided in the textbook is wrong
+mprintf("workfuntion of the semiconductor at 400K = %.2f eV ",phi_s1) //The answer provided in the textbook is wrong
+
+
+
+
+
+
diff --git a/3636/CH7/EX7.10/Ex7_10.txt b/3636/CH7/EX7.10/Ex7_10.txt
new file mode 100644
index 000000000..00805cab1
--- /dev/null
+++ b/3636/CH7/EX7.10/Ex7_10.txt
@@ -0,0 +1,4 @@
+ electron doping concentration = 4.1e+10 cm^-3
+workfuntion of the semiconductor = 4.34 eV
+workfuntion of the semiconductor on B side = 4.89 eV
+workfuntion of the semiconductor at 400K = 4.74 eV \ No newline at end of file
diff --git a/3636/CH7/EX7.2/Ex7_2.sce b/3636/CH7/EX7.2/Ex7_2.sce
new file mode 100644
index 000000000..94372d1dc
--- /dev/null
+++ b/3636/CH7/EX7.2/Ex7_2.sce
@@ -0,0 +1,17 @@
+clc;
+clear;
+Nd=2.01*10^7 //Doping level of n-type silicon in cm^-3
+Nc=2.8*10^19 //in cm^-3
+e=1.6*10^-19 //in J
+epsilon_r=11.7 //in F/cm
+epsilon_0=8.85*10^-14 //in F/cm
+slope=6*10^13
+Vbi=0.45 //in V
+Const=0.026 //constant for kT/e in V
+
+//Calculation
+Nd=2/(e*epsilon_r*epsilon_0*slope) //in cm^-3
+phi_n=Const*log(Nc/Nd) //in V
+phi_Bn=Vbi+phi_n
+
+mprintf("Actual barrier height= %0.3f V",phi_Bn)
diff --git a/3636/CH7/EX7.2/Ex7_2.txt b/3636/CH7/EX7.2/Ex7_2.txt
new file mode 100644
index 000000000..ebaa54a84
--- /dev/null
+++ b/3636/CH7/EX7.2/Ex7_2.txt
@@ -0,0 +1 @@
+ Actual barrier height= 0.578 V \ No newline at end of file
diff --git a/3636/CH7/EX7.3/Ex7_3.sce b/3636/CH7/EX7.3/Ex7_3.sce
new file mode 100644
index 000000000..38590239e
--- /dev/null
+++ b/3636/CH7/EX7.3/Ex7_3.sce
@@ -0,0 +1,13 @@
+clc;
+clear;
+E=10^4 //Electric field in V/cm
+e=1.6*10^-19 //in J
+epsilon_r=11.7 //in F/cm
+epsilon_0=8.85*10^-14 //in F/cm
+
+//Calculation
+del_phi=sqrt((e*E)/(4*%pi*epsilon_r*epsilon_0))
+xm=sqrt(e/(16*%pi*epsilon_r*epsilon_0*E))
+
+mprintf("Schottkybarrier-lowering for Si-metal contact= %0.3f V\n",del_phi)
+mprintf("maximum barrier height= %1.2e cm",xm)
diff --git a/3636/CH7/EX7.3/Ex7_3.txt b/3636/CH7/EX7.3/Ex7_3.txt
new file mode 100644
index 000000000..41a4b3f1b
--- /dev/null
+++ b/3636/CH7/EX7.3/Ex7_3.txt
@@ -0,0 +1,2 @@
+ Schottkybarrier-lowering for Si-metal contact= 0.011 V
+maximum barrier height= 5.54e-07 cm \ No newline at end of file
diff --git a/3636/CH7/EX7.4/Ex7_4.sce b/3636/CH7/EX7.4/Ex7_4.sce
new file mode 100644
index 000000000..423682c4b
--- /dev/null
+++ b/3636/CH7/EX7.4/Ex7_4.sce
@@ -0,0 +1,13 @@
+clc;
+clear;
+A=114 //effective Richardson constant A/K^2*cm^2
+e=1.6*10^-19 //in J
+T=300 //in K
+phi_Bn=0.82 //in eV
+const=0.026 //value for kT/e in V
+
+//Calculation
+J0=A*T^2*exp(-(phi_Bn/const))
+
+mprintf("Reverse saturation current density= %1.2e A/cm^2",J0)
+
diff --git a/3636/CH7/EX7.4/Ex7_4.txt b/3636/CH7/EX7.4/Ex7_4.txt
new file mode 100644
index 000000000..4e9719630
--- /dev/null
+++ b/3636/CH7/EX7.4/Ex7_4.txt
@@ -0,0 +1 @@
+ Reverse saturation current density= 2.06e-07 A/cm^2 \ No newline at end of file
diff --git a/3636/CH7/EX7.5/Ex7_5.sce b/3636/CH7/EX7.5/Ex7_5.sce
new file mode 100644
index 000000000..0c7c9436a
--- /dev/null
+++ b/3636/CH7/EX7.5/Ex7_5.sce
@@ -0,0 +1,13 @@
+clc;
+clear;
+xGe=4.13 //in eV
+xGaAs=4.07 //in eV
+Eg_Ge=0.7 //in eV
+Eg_GaAs=1.45 //in eV
+
+//Calculation
+delE_c=xGe-xGaAs
+delE_v=(Eg_GaAs-Eg_Ge)-delE_c
+
+mprintf("Conduction band= %1.2f eV\n",delE_c)
+mprintf("Valence band= %1.2f eV",delE_v)
diff --git a/3636/CH7/EX7.5/Ex7_5.txt b/3636/CH7/EX7.5/Ex7_5.txt
new file mode 100644
index 000000000..c8c136200
--- /dev/null
+++ b/3636/CH7/EX7.5/Ex7_5.txt
@@ -0,0 +1,2 @@
+ Conduction band= 0.06 eV
+Valence band= 0.69 eV \ No newline at end of file
diff --git a/3636/CH7/EX7.6/Ex7_6.sce b/3636/CH7/EX7.6/Ex7_6.sce
new file mode 100644
index 000000000..81933a1e4
--- /dev/null
+++ b/3636/CH7/EX7.6/Ex7_6.sce
@@ -0,0 +1,24 @@
+clc;
+clear;
+Nd=3*10^15 //Doping level of n-type silicon in cm^-3
+Nc=2.8*10^19 //in cm^-3
+e=1.6*10^-19 //in J
+phi_m=4.5 //work function for chromium in eV
+epsilon_si=11.7 //in F/cm
+epsilon_0=8.854*10^-14 //in F/cm
+xsi=4.01 //electron affinity for Si in eV
+Vbi=5 //reverse bias voltage in V
+VR=0 //in V
+
+//Calculation
+phi_B=phi_m-xsi //in eV
+xn=((2*epsilon_si*epsilon_0*(Vbi+VR))/(e*Nd))^0.5 //in cm
+Emax=(e*Nd*xn)/(epsilon_si*epsilon_0)
+CJ=((e*epsilon_si*epsilon_0*Nd)/(2*(Vbi+VR)))^0.5
+
+mprintf("a)\n")
+mprintf("ideal schottky barrier height= %1.2f ev\n",phi_B)
+mprintf("b)\n")
+mprintf("peak electric field= %1.2e V/cm\n",Emax)
+mprintf("c)\n")
+mprintf("depletion layer capacitance per unit area= %1.2e F/cm^2",CJ) //The answer provided in the textbook is wrong
diff --git a/3636/CH7/EX7.6/Ex7_6.txt b/3636/CH7/EX7.6/Ex7_6.txt
new file mode 100644
index 000000000..4bd00dd47
--- /dev/null
+++ b/3636/CH7/EX7.6/Ex7_6.txt
@@ -0,0 +1,6 @@
+ a)
+ideal schottky barrier height= 0.49 ev
+b)
+peak electric field= 6.81e+04 V/cm
+c)
+depletion layer capacitance per unit area= 7.05e-09 F/cm^2 \ No newline at end of file
diff --git a/3636/CH7/EX7.9/Ex7_9.sce b/3636/CH7/EX7.9/Ex7_9.sce
new file mode 100644
index 000000000..edd66c27d
--- /dev/null
+++ b/3636/CH7/EX7.9/Ex7_9.sce
@@ -0,0 +1,25 @@
+clc;
+clear;
+phi_m=4.3 //work function in eV
+xsi=4 //electron affinity in eV
+p0=10^17 //in cm^-3
+Na=10^17 //in cm^-3
+ni=1.5*10^10 //in cm^-3
+delE_fc=0.957 //in eV
+Const=0.0259 //constant value for kT in eV
+
+//Calculation
+delE_if=Const*log(p0/ni)
+
+//a) Before contact
+phi_s=xsi+delE_fc
+
+//b) After contact
+phi_B=phi_m-xsi
+eV0=phi_s-phi_m
+
+mprintf("Energy state difference= %.3f eV\n",delE_if)
+mprintf(" a)phi_s= %.3f eV\n",phi_s)
+mprintf(" b)Forward Bias (phi_B)= %.1f eV\n",phi_B)
+mprintf(" eV0= %.3f eV",eV0) //The answer provided in the textbook is wrong
+
diff --git a/3636/CH7/EX7.9/Ex7_9.txt b/3636/CH7/EX7.9/Ex7_9.txt
new file mode 100644
index 000000000..e0913a844
--- /dev/null
+++ b/3636/CH7/EX7.9/Ex7_9.txt
@@ -0,0 +1,4 @@
+ Energy state difference= 0.407 eV
+ a)phi_s= 4.957 eV
+ b)Forward Bias (phi_B)= 0.3 eV
+ eV0= 0.657 eV \ No newline at end of file
generated by cgit (git 2.34.1) at 2024-12-22 17:00:40 +0000