1 files changed, 24 insertions, 0 deletions
diff --git a/3636/CH7/EX7.6/Ex7_6.sce b/3636/CH7/EX7.6/Ex7_6.sce
new file mode 100644
index 000000000..81933a1e4
--- /dev/null
+++ b/3636/CH7/EX7.6/Ex7_6.sce
@@ -0,0 +1,24 @@
+clc;
+clear;
+Nd=3*10^15 //Doping level of n-type silicon in cm^-3
+Nc=2.8*10^19 //in cm^-3
+e=1.6*10^-19 //in J
+phi_m=4.5 //work function for chromium in eV
+epsilon_si=11.7 //in F/cm
+epsilon_0=8.854*10^-14 //in F/cm
+xsi=4.01 //electron affinity for Si in eV
+Vbi=5 //reverse bias voltage in V
+VR=0 //in V
+
+//Calculation
+phi_B=phi_m-xsi //in eV
+xn=((2*epsilon_si*epsilon_0*(Vbi+VR))/(e*Nd))^0.5 //in cm
+Emax=(e*Nd*xn)/(epsilon_si*epsilon_0)
+CJ=((e*epsilon_si*epsilon_0*Nd)/(2*(Vbi+VR)))^0.5
+
+mprintf("a)\n")
+mprintf("ideal schottky barrier height= %1.2f ev\n",phi_B)
+mprintf("b)\n")
+mprintf("peak electric field= %1.2e V/cm\n",Emax)
+mprintf("c)\n")
+mprintf("depletion layer capacitance per unit area= %1.2e F/cm^2",CJ) //The answer provided in the textbook is wrong