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| author | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
|---|---|---|
| committer | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
| commit | 7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch) | |
| tree | dbb9e3ddb5fc829e7c5c7e6be99b2c4ba356132c /3636/CH7/EX7.6/Ex7_6.sce | |
| parent | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff) | |
| download | Scilab-TBC-Uploads-7f60ea012dd2524dae921a2a35adbf7ef21f2bb6.tar.gz Scilab-TBC-Uploads-7f60ea012dd2524dae921a2a35adbf7ef21f2bb6.tar.bz2 Scilab-TBC-Uploads-7f60ea012dd2524dae921a2a35adbf7ef21f2bb6.zip | |
initial commit / add all books
Diffstat (limited to '3636/CH7/EX7.6/Ex7_6.sce')
| -rw-r--r-- | 3636/CH7/EX7.6/Ex7_6.sce | 24 |
1 files changed, 24 insertions, 0 deletions
diff --git a/3636/CH7/EX7.6/Ex7_6.sce b/3636/CH7/EX7.6/Ex7_6.sce new file mode 100644 index 000000000..81933a1e4 --- /dev/null +++ b/3636/CH7/EX7.6/Ex7_6.sce @@ -0,0 +1,24 @@ +clc;
+clear;
+Nd=3*10^15 //Doping level of n-type silicon in cm^-3
+Nc=2.8*10^19 //in cm^-3
+e=1.6*10^-19 //in J
+phi_m=4.5 //work function for chromium in eV
+epsilon_si=11.7 //in F/cm
+epsilon_0=8.854*10^-14 //in F/cm
+xsi=4.01 //electron affinity for Si in eV
+Vbi=5 //reverse bias voltage in V
+VR=0 //in V
+
+//Calculation
+phi_B=phi_m-xsi //in eV
+xn=((2*epsilon_si*epsilon_0*(Vbi+VR))/(e*Nd))^0.5 //in cm
+Emax=(e*Nd*xn)/(epsilon_si*epsilon_0)
+CJ=((e*epsilon_si*epsilon_0*Nd)/(2*(Vbi+VR)))^0.5
+
+mprintf("a)\n")
+mprintf("ideal schottky barrier height= %1.2f ev\n",phi_B)
+mprintf("b)\n")
+mprintf("peak electric field= %1.2e V/cm\n",Emax)
+mprintf("c)\n")
+mprintf("depletion layer capacitance per unit area= %1.2e F/cm^2",CJ) //The answer provided in the textbook is wrong
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