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+clc;
+clear;
+ni=1.5*10^10 //in cm^-3
+delE_iF=0.0259 //in eV
+delE_cF=0.29 //in eV
+phi_G=4.8 //in eV
+impurity_conc=9.9*10^14 //in cm^-3
+affinity=0.55 //in eV
+Const=0.0259 //constant value for kT in eV
+x=4.05 //electron affinity for silicon in eV
+
+//Calculation
+//a)
+n0=ni*exp(delE_iF/Const) //in cm^-3
+phi_s=x+delE_cF 
+
+//b)
+Ptype_conc=impurity_conc-n0 //net concentration of p-type on B side in cm^-3
+delE_iF_Bside=Const*log(Ptype_conc/ni) //in eV
+phi_s_Bside=x+delE_iF_Bside+affinity
+
+//d)
+ni1=8*10^12 //increased ni in cm^-3
+delE_iF1=Const*log(n0/ni1) //in eV
+phi_s1=x+(affinity-delE_iF1)
+
+mprintf("electron doping concentration = %.1e cm^-3\n",n0) //The answer provided in the textbook is wrong
+mprintf("workfuntion of the semiconductor = %.2f eV\n",phi_s)
+mprintf("workfuntion of the semiconductor on B side = %.2f eV\n",phi_s_Bside) //The answer provided in the textbook is wrong
+mprintf("workfuntion of the semiconductor at 400K = %.2f eV ",phi_s1) //The answer provided in the textbook is wrong
+
+
+
+
+
+