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diff --git a/3636/CH7/EX7.1/Ex7_1.sce b/3636/CH7/EX7.1/Ex7_1.sce
new file mode 100644
index 000000000..a14d7a7d9
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+clc;
+clear;
+Nd=5*10^16 //Doping level of n-type silicon in cm^-3
+Nc=2.8*10^19 //in cm^-3 
+e=1.6*10^-19 //in J
+phi_B0=1.09 //in eV
+epsilon_r=11.7 //in F/cm
+epsilon_0=8.85*10^-14 //in F/cm
+Const=0.026 //constant for kT/e in V
+
+//Calculation
+phi_n=Const*log(Nc/Nd) //in eV
+Vbi=(phi_B0-phi_n) //in eV
+xn=((2*epsilon_r*epsilon_0*Vbi)/(e*Nd))^0.5
+Emax=(e*Nd*xn)/(epsilon_r*epsilon_0)
+
+mprintf("a) Ideal Schottky barrier height= %0.3f eV\n",phi_n)
+mprintf("b) Built-in potential barrier= %0.3f V\n",Vbi)
+mprintf("c) Space charge width at zero bias= %1.3e cm\n",xn)//The answers vary due to round off error
+mprintf("d) maximum electric field= %2.2e V cm^-1",Emax) //The answers vary due to round off error
+