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author | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
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committer | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
commit | 7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch) | |
tree | dbb9e3ddb5fc829e7c5c7e6be99b2c4ba356132c /3636/CH7/EX7.1/Ex7_1.sce | |
parent | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff) | |
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initial commit / add all books
Diffstat (limited to '3636/CH7/EX7.1/Ex7_1.sce')
-rw-r--r-- | 3636/CH7/EX7.1/Ex7_1.sce | 21 |
1 files changed, 21 insertions, 0 deletions
diff --git a/3636/CH7/EX7.1/Ex7_1.sce b/3636/CH7/EX7.1/Ex7_1.sce new file mode 100644 index 000000000..a14d7a7d9 --- /dev/null +++ b/3636/CH7/EX7.1/Ex7_1.sce @@ -0,0 +1,21 @@ +clc;
+clear;
+Nd=5*10^16 //Doping level of n-type silicon in cm^-3
+Nc=2.8*10^19 //in cm^-3
+e=1.6*10^-19 //in J
+phi_B0=1.09 //in eV
+epsilon_r=11.7 //in F/cm
+epsilon_0=8.85*10^-14 //in F/cm
+Const=0.026 //constant for kT/e in V
+
+//Calculation
+phi_n=Const*log(Nc/Nd) //in eV
+Vbi=(phi_B0-phi_n) //in eV
+xn=((2*epsilon_r*epsilon_0*Vbi)/(e*Nd))^0.5
+Emax=(e*Nd*xn)/(epsilon_r*epsilon_0)
+
+mprintf("a) Ideal Schottky barrier height= %0.3f eV\n",phi_n)
+mprintf("b) Built-in potential barrier= %0.3f V\n",Vbi)
+mprintf("c) Space charge width at zero bias= %1.3e cm\n",xn)//The answers vary due to round off error
+mprintf("d) maximum electric field= %2.2e V cm^-1",Emax) //The answers vary due to round off error
+
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