diff options
Diffstat (limited to '2300')
148 files changed, 3044 insertions, 0 deletions
diff --git a/2300/CH1/EX1.7.1/Ex1_1.sce b/2300/CH1/EX1.7.1/Ex1_1.sce new file mode 100755 index 000000000..ea9f08f72 --- /dev/null +++ b/2300/CH1/EX1.7.1/Ex1_1.sce @@ -0,0 +1,13 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 1:Basic Ideas:Energy Bands In Solids
+clc
+clear
+//given
+Ek=1.6*(10^-19)*100;//Ek=final kinetic energy of electron in Joules
+m0=9.11*(10^-31);//m0=rest mass of the electron in kg
+//solving final velocity of the electron
+v=sqrt((2*Ek)/m0)//v=final velocity of the electron
+disp("m/s",v,"v=")
+
diff --git a/2300/CH1/EX1.7.2/Ex1_2.sce b/2300/CH1/EX1.7.2/Ex1_2.sce new file mode 100755 index 000000000..c9d5bb978 --- /dev/null +++ b/2300/CH1/EX1.7.2/Ex1_2.sce @@ -0,0 +1,15 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 1:Basic Ideas:Energy Bands In Solids
+clc
+clear
+//given data
+m=7360*9.11*(10^-31);//m=mass of the ion in kg
+q=2*1.6*(10^-19);//q=charge of the ion in Coulomb
+V=2000;//V=potential difference in Volt
+//solving velocity & kinetic energy of the ion
+v=sqrt((2*q*V)/m)//v=velocity of the ion
+disp("m/s",v,"v=")
+Ek=(1/2)*m*(v^2)//Ek=kinetic energy of the ion
+disp("J",Ek,"Ek=")
diff --git a/2300/CH10/EX10.7.1/Ex10_1.sce b/2300/CH10/EX10.7.1/Ex10_1.sce new file mode 100755 index 000000000..d4b7dae6d --- /dev/null +++ b/2300/CH10/EX10.7.1/Ex10_1.sce @@ -0,0 +1,20 @@ +//scilab 5.4.1
+//windows 7 operating system
+//chapter 10:Feedback In Amplifiers
+clc
+clear
+A=(-100)//A=voltage gain of an amplifier
+B=(-0.04)//B=feedback ratio
+Af=A/(1+(A*B))//Af=voltage gain with feedback
+disp("",Af,"1.Voltage gain with feedback Af=")
+F=20*log10(abs(Af/A))//F=amount of feedback
+format("v",6)
+disp("dB",F,"2.Amount of feedback F=")
+Vi=40*(10^-3)//Vi=input voltage
+Vo=Af*Vi//Vo=output voltage
+disp("V",Vo,"3.Output voltage Vo=")
+f=(-A*B)//f=feedback factor
+disp("",f,"4.Feedback factor f=")
+Vf=B*Vo//Vf=feedback voltage
+disp("mV",Vf/10^-3,"5.Feedback voltage is Vf=")//Vf is converted in terms of mV
+
diff --git a/2300/CH10/EX10.7.2/Ex10_2.sce b/2300/CH10/EX10.7.2/Ex10_2.sce new file mode 100755 index 000000000..e3c26ac06 --- /dev/null +++ b/2300/CH10/EX10.7.2/Ex10_2.sce @@ -0,0 +1,21 @@ +//scilab 5.4.1
+//windows 7 operating system
+//chapter 10:Feedback In Amplifiers
+clc
+clear
+disp("Negative feedback has to be applied for gain stability")
+//A=open loop gain of an amplifier
+//B=feedback ratio
+Af=10//Af=voltage gain with feedback
+//dAf/Af=(1/(1+(A*B)))*(dA/A)
+y=2//(dAf/Af)=y=percent change of gain that is allowable
+x=20//(dA/A)=x=percent change in open loop gain of an amplifier
+a=(x/y)//(1+(A*B))=a
+disp("",a,"(1+(A*B))=")
+//Af=A/((1+(A*B)))
+A=(Af*a)
+disp("",A,"Open loop gain A=")
+//1+(A*B)=a
+B=(a-1)/A
+disp("",B,"Minimum value of feedback ratio B=")
+
diff --git a/2300/CH10/EX10.7.3/Ex10_3.sce b/2300/CH10/EX10.7.3/Ex10_3.sce new file mode 100755 index 000000000..5cd6736ab --- /dev/null +++ b/2300/CH10/EX10.7.3/Ex10_3.sce @@ -0,0 +1,12 @@ +//scilab 5.4.1
+//windows 7 operating system
+//chapter 10:Feedback In Amplifiers
+clc
+clear
+VD=0.1//VD=outputdistortion voltage
+VDf=0.05//VDf=output distortion voltage with feedback
+A=-80//A=open loop gain of an amplifier
+//VDf=VD/(1+(A*B))
+B=((VD/VDf)-1)/A//B=reverse transmission factor
+format("v",10)
+disp("",B,"Reverse transmission factor B=")
diff --git a/2300/CH10/EX10.7.4/Ex10_4.sce b/2300/CH10/EX10.7.4/Ex10_4.sce new file mode 100755 index 000000000..18140e7c5 --- /dev/null +++ b/2300/CH10/EX10.7.4/Ex10_4.sce @@ -0,0 +1,38 @@ +//scilab 5.4.1
+//windows 7 operating system
+//chapter 10:Feedback In Amplifiers
+clc
+clear
+B=50//B=reverse transmission factor for silicon transistor T1
+VB=((640)*10)/(640+360)//calculating voltage at point B i.e VB by applying voltage divider rule in the given circuit
+format("v",4)
+disp("V",VB,"VB=")
+VBE=VB-5.6//VBE=base emitter voltage drop for silicon transistors T1 and T2 both
+disp("V",VBE,"VBE=")
+VA=10-0.8//VA=voltage at point A in the given circuit
+disp("V",VA,"VA=")
+I1=10/(360+640)//I1=current through resistor of 360 ohm
+format("v",5)
+disp("A",I1,"I1=")
+IE1=I1+1//IE1=emitter current of transistor T1
+format("v",5)
+disp("A",IE1,"IE1=")
+//IC1=-IB1+IE1
+IB1=IE1/(B+1)//IB1=base current of transistor T1
+disp("mA",IB1/10^-3,"IB1=")//IB1 is converted in terms of mA
+I2=(20-VA)/300//I2=current through resistor of 300 ohm
+disp("mA",I2/10^-3,"I2=")//I2 is converted in terms of mA
+IC2=I2-IB1//IC2=collector current of transistor T2
+disp("mA",IC2/10^-3,"IC2=")//IC2 is converted in terms of mA
+//Assuming the base current IB2 of transistor T2 is negligibly small
+IE2=IC2//IE2=emitter current of transistor T2
+disp("mA",IE2/10^-3,"IE2=")//IE2 is converted in terms of mA
+I3=(20-5.6)/1000//I3=current through 1000 ohm resistor
+disp("mA",I3/10^-3,"I3=")//I3 is converted in terms of mA
+IZ=I3+IE2//IZ=current through zener diode
+disp("mA",IZ/10^-3,"IZ=")//IZ is converted in terms of mA
+VCE=20-10//VCE=collector emitter voltage drop for transistor T1
+disp("V",VCE,"VCE=")
+IC1=B*IB1
+P=VCE*IC1//P=power dissipation in transistor T1
+disp("W",P,"P=")
diff --git a/2300/CH10/EX10.7.5/Ex10_5.sce b/2300/CH10/EX10.7.5/Ex10_5.sce new file mode 100755 index 000000000..35f461ffd --- /dev/null +++ b/2300/CH10/EX10.7.5/Ex10_5.sce @@ -0,0 +1,18 @@ +//scilab 5.4.1
+//windows 7 operating system
+//chapter 10:Feedback In Amplifiers
+clc
+clear
+A=50//A=voltage gain of transistor amplifier
+Ri=1000//Ri=input resistance of transistor amplifier without feedback
+Ro=40*1000//Ro=output resistance of transistor amplifier feedback
+//Vf=0.1*Vo (given) where Vf=feedback voltage and Vo=output voltage
+B=0.1//B=(Vf/Vo)=feedback fraction
+Af=A/(1+(A*B))//Af=gain of the feedback amplifier
+format("v",5)
+disp("",Af,"Gain of feedback amplifier Af=")
+Rif=Ri*(1+(A*B))//Rif=input resistance of the feedback amplifier
+Rof=Ro/(1+(A*B))//Rof=output resistance of the feedback amplifier
+format("v",5)
+disp("kilo ohm",Rif/10^3,"Input resistance with feedback Rif=")//Rif is converted in terms of kilo ohm
+disp("kilo ohm",Rof/10^3,"Output resistance with feedback Rof=")//Rof is converted in terms of kilo ohm
diff --git a/2300/CH11/EX11.12.1/Ex11_1.sce b/2300/CH11/EX11.12.1/Ex11_1.sce new file mode 100755 index 000000000..fd365efb9 --- /dev/null +++ b/2300/CH11/EX11.12.1/Ex11_1.sce @@ -0,0 +1,21 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 11 Sinusoidal oscillator and multivibrators
+clc
+clear
+L=50*10^-3//L=primary inductance of a transformer in henry
+C=(200*10^-12)//C=capacitor connected across transformer in farad
+R=50//dc resistance of primary coil in ohm
+hie=2000//hie=input impedance in ohm
+hre=10^(-4)//hre=reverse voltage amplification factor
+hfe=98//hfe=current gain
+hoe=(0.5*10^(-4))//hoe=output impedance in mho
+RB=50000//RB=resistance
+f=1/(2*%pi*sqrt(L*C))//f=frequency of oscillation
+format("v",5)
+g=((hie*hoe)-(hfe*hre))//g=dhe=delta he
+//M=mutual inductance in henry between the transformer primary and the secondary coils for sustained oscillations
+M=((RB/hfe)*((C*R)+(hoe*L)))+((C*R*hie)/hfe)+((L*g)/hfe)
+format("v",5)
+disp("kHz",f/10^3,"Frequency of oscillation is =")//f is converted in terms of kHz
+disp("mH",M/10^-3,"Mutual inductance is =")//M is converted in terms of mH
diff --git a/2300/CH11/EX11.12.2/Ex11_2.sce b/2300/CH11/EX11.12.2/Ex11_2.sce new file mode 100755 index 000000000..ffc9451f8 --- /dev/null +++ b/2300/CH11/EX11.12.2/Ex11_2.sce @@ -0,0 +1,29 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 11 Sinusoidal oscillator and multivibrators
+clc
+clear
+//L1 and L2=inductances in henry in a Hartley oscillator
+//Suppose L1=a
+//L2=b
+f=60*10^3//f=frequency in Hz
+C=400*10^(-12)//C=capacitance in Farad
+//Also tuning capacitance varies from 100 pF to 400 pF
+//f=1/(2*%pi*sqrt((L1+L2)*C)) where f=frequency of a Hartley oscillator which varies from 60 kHz to 120 kHz
+//d=L1+L2=a+b
+//d=1/(((2*%pi*f)^2)*C)
+d=1/(((2*%pi*f)^2)*C)//.......(1)
+format("v",10)
+//e=L2/L1=hfe/dhe
+hfe=90//hfe=current gain
+dhe=0.2//dhe=delta he
+e=hfe/dhe//..........(2)
+//From equation (1) and (2)
+//L*x=y
+x=[1 1 ; e -1]
+y=[d ; 0]
+L=inv(x)*y
+format("v",6)
+disp("micro Henry",(L(1))/10^-6,"Inductance L1 is =")//converting L(1) in terms of micro Henry
+disp("mH",(L(2))/10^-3,"Inductance L2 is =")//converting L(2) in terms of mH
+
diff --git a/2300/CH11/EX11.12.3/Ex11_3.sce b/2300/CH11/EX11.12.3/Ex11_3.sce new file mode 100755 index 000000000..421e4ba34 --- /dev/null +++ b/2300/CH11/EX11.12.3/Ex11_3.sce @@ -0,0 +1,11 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 11 Sinusoidal oscillator and multivibrators
+clc
+clear
+L=20*10^-3//L=inductance in henry
+C1=(200*10^(-12))//C1=capacitance in farad
+C2=(300*10^(-12))//C2=capacitance in farad
+Cs=((C1*C2)/(C1+C2))
+f=1/(2*%pi*sqrt(L*Cs))
+disp("kHz",f/10^3,"Frequency of oscillation is =")//converting f in terms of kHz
diff --git a/2300/CH11/EX11.12.4/Ex11_4.sce b/2300/CH11/EX11.12.4/Ex11_4.sce new file mode 100755 index 000000000..cc37f878b --- /dev/null +++ b/2300/CH11/EX11.12.4/Ex11_4.sce @@ -0,0 +1,9 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 11 Sinusoidal oscillator and multivibrators
+clc
+clear
+R=4700//R=resistance in a phase-shift oscillator in ohm
+C=(0.01*10^(-6))//C=capacitance in a phase-shift oscillator in farad
+f=1/(2*%pi*sqrt(10)*R*C)
+disp("kHz",f/10^3,"Frequency of oscillation f is =")//converting f in terms of kHz
diff --git a/2300/CH11/EX11.12.5/Ex11_5.sce b/2300/CH11/EX11.12.5/Ex11_5.sce new file mode 100755 index 000000000..d4589adc8 --- /dev/null +++ b/2300/CH11/EX11.12.5/Ex11_5.sce @@ -0,0 +1,23 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 11 Sinusoidal oscillator and multivibrators
+clc
+clear
+f=30//f=frequency of oscillation of a Wien-bridge oscillator in Hz
+C=(500*10^(-12))//C=capacitance in farad
+//f=1/2*%pi*R*C//R=resistance in ohm
+R=1/(2*%pi*f*C)
+disp("Mega ohms",R/10^6,"Resistance needed to span the frequency range,R=")//converting R in terms of Mega ohms
+//C1=50pF C2=500pF where C1,C2 are variable capacitances in a Wien bridge oscillator
+//ratio of capacitance=(1:10)
+//frequency range is 30 Hz to 300 Hz with R=10.6 Megaohms
+//for the next frequency range from 300 Hz to 3 kHz ,new R=(10.6/10)=1.06 Megaohm
+//for frequency range 3 kHz to 30kHz,R=1.06/10=106 Kilo-ohm
+//So,three values of R are 10.6 Megaohm,1.06 Megaohm,106 Kilo ohm
+A=6//A=gain of amplifier
+//R2/(R1+R2)=(1/3)-(1/A)=(1/3)-(1/6)
+//1+(R1/R2)=6
+//Hence R1/R2=5
+//R3=(R1/R2)
+R3="5:1"
+disp(R3,"The ratio of the resistances in the other arms of the bridge,R1/R2 is =")
diff --git a/2300/CH11/EX11.12.6/Ex11_6.sce b/2300/CH11/EX11.12.6/Ex11_6.sce new file mode 100755 index 000000000..c1b9229b6 --- /dev/null +++ b/2300/CH11/EX11.12.6/Ex11_6.sce @@ -0,0 +1,12 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 11 Sinusoidal oscillator and multivibrators
+clc
+clear
+//Q=Quality factor
+L=3.5//L=inductance in henry
+f=450000//f=frequency in Hz
+R=9050//R=resistance in ohm
+Q=(2*%pi*f*L)/R
+format("v",5)//format() sets the current printing format
+disp(Q,"Quality factor is")
diff --git a/2300/CH12/EX12.9.1/Ex12_1.sce b/2300/CH12/EX12.9.1/Ex12_1.sce new file mode 100755 index 000000000..3520d6b57 --- /dev/null +++ b/2300/CH12/EX12.9.1/Ex12_1.sce @@ -0,0 +1,13 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 12 Modulation and Demodulation
+clc
+clear
+Vmax=8//Vmax=maximum peak to peak value of an AM voltage
+Vmin=2//Vmin=minimum peak to peak value of an AM voltage
+ma=(Vmax-Vmin)/(Vmax+Vmin)//ma=percentage modulation
+disp("%",(ma*100),"Percentage modulation ma=")
+//ma=(Vmax-Vmin)/(2*VC) where VC=amplitude of the unmodulated carrier
+VC=(Vmax-Vmin)/(2*ma)
+disp("V",VC,"Amplitude of the unmodulated carrier is VC=")
+disp("In the textbook answer given is incorrect as they have further divided by 2 which is not the part of given formula.")
diff --git a/2300/CH12/EX12.9.2/Ex12_2.sce b/2300/CH12/EX12.9.2/Ex12_2.sce new file mode 100755 index 000000000..1bb511d28 --- /dev/null +++ b/2300/CH12/EX12.9.2/Ex12_2.sce @@ -0,0 +1,16 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 12 Modulation and Demodulation
+clc
+clear
+fc=1000*(10^3)//fc=frequency of the carrier wave in Hz(hertz)
+fmin=400
+fmax=1600//fmin and fmax represent the frequency range of audio signals by which the carrier wave is amplitude modulated.
+fs=fmax-fmin//fs=frequency span of each sideband
+disp("Hz",fs,"1.Frequency span of each sideband is ")
+fumax=(fc+fmax)/1000//fumax=maximum upper side frequency
+disp("kHz",fumax,"2.The maximum upper side frequency is ")
+flmin=(fc-fmax)/1000//flmin=minimum lower side frequency
+disp("kHz",flmin,"3.The minimum lower side frequency is ")
+Wc=fumax-flmin//Wc=channelwidth
+disp("kHz",Wc,"4.The channelwidth is ")
diff --git a/2300/CH12/EX12.9.3/Ex12_3.sce b/2300/CH12/EX12.9.3/Ex12_3.sce new file mode 100755 index 000000000..080de4732 --- /dev/null +++ b/2300/CH12/EX12.9.3/Ex12_3.sce @@ -0,0 +1,13 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 12 Modulation and Demodulation
+clc
+clear
+R=100//R=load resistance in ohms
+Vc=100//Vc=peak voltage of the carrier in volts
+ma=0.4//ma=modulation factor
+Pc=(Vc^2)/(2*R)//Pc=unmodulated carrier power developed by an AM wave
+disp("W",Pc,"The unmodulated carrier power is Pc= ")
+Pt=Pc*(1+((ma^2)/2))//Pt=total power developed
+disp("W",Pt,"The total power developed by the AM wave is Pt=")
+
diff --git a/2300/CH12/EX12.9.4/Ex12_4.sce b/2300/CH12/EX12.9.4/Ex12_4.sce new file mode 100755 index 000000000..a47428a6f --- /dev/null +++ b/2300/CH12/EX12.9.4/Ex12_4.sce @@ -0,0 +1,13 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 12 Modulation and Demodulation
+clc
+clear
+ma=0.5//ma=modulation factor
+Pc=20//Pc=unmodulated carrier power in kilowatts(kW)
+Ps=(1/2)*(ma^2)*Pc//Ps=total sideband power
+disp("kW",Ps,"The total sideband power is Ps=")
+//modulator system efficiency is given as 70 per cent
+Pa=Ps/0.7//Pa=audio power necessary toamplitude modulate a given carrier wave
+format("v",5)
+disp("kW",Pa,"The required audio power is ")
diff --git a/2300/CH12/EX12.9.5/Ex12_5.sce b/2300/CH12/EX12.9.5/Ex12_5.sce new file mode 100755 index 000000000..61918ab2c --- /dev/null +++ b/2300/CH12/EX12.9.5/Ex12_5.sce @@ -0,0 +1,14 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 12 Modulation and Demodulation
+clc
+clear
+df=30//df=maximum frequency deviation in kilohertz(kHz)
+fm=15//fm=modulation frequency of a sinusoidal audio signal in kilohertz(kHz)
+mf=df/fm//mf=frequency modulation index
+disp(mf,"1.The modulation index is mf=")
+fc=100//fc=carrier wave frequency in megahertz(MHz)
+disp("2.The three significant pairs of side frequencies are 100MHz+-15kHz(fc+-fm);100MHz+-30kHz(fc+-2fm);100MHz+-45kHz(fc+-3fm)")
+wc=mf*3*fm//wc=channelwidth required for 3 above mentioned side frequency pairs
+disp("kHz",wc,"3.The required channelwidth is ")
+
diff --git a/2300/CH12/EX12.9.6/Ex12_6.sce b/2300/CH12/EX12.9.6/Ex12_6.sce new file mode 100755 index 000000000..9caa8541b --- /dev/null +++ b/2300/CH12/EX12.9.6/Ex12_6.sce @@ -0,0 +1,13 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 12 Modulation and Demodulation
+clc
+clear
+R=0.2*(10^6)//R=load resistance in ohms in a diode detector
+C=150*(10^-12)//C=capacitance in farad in a diode detector
+//fmh=wmh/(2*%pi)where fmh=highest modulation frequency that can be detected with tolerable distortion and wmh=corresponding angular frequency
+ma=0.5//ma=modulation factor or depth of modulation
+fmh=(1/(2*%pi*ma*R*C))/1000
+format("v",6)
+disp("kHz",fmh,"The required frequency is fmh=")
+
diff --git a/2300/CH12/EX12.9.7/Ex12_7.sce b/2300/CH12/EX12.9.7/Ex12_7.sce new file mode 100755 index 000000000..d01799c48 --- /dev/null +++ b/2300/CH12/EX12.9.7/Ex12_7.sce @@ -0,0 +1,13 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 12 Modulation and Demodulation
+clc
+clear
+Pc=10//Pc=unmodulated carrier power in kilowatts(kW)
+Pt=12.5//Pt=total power in kilowatts(kW)
+//Pt=Pc*(1+((ma^2)/2))
+ma=sqrt(2*((Pt/Pc)-1))//ma=depth of modulation of the first signal
+disp(ma,"The depth of modulation is ma=")
+mb=0.6//mb=depth of modulation of the second signal
+PT=Pc*(1+((ma^2)/2)+((mb^2)/2))//PT=the total radiated power
+disp("kW",PT,"The total radiated power is PT=")
diff --git a/2300/CH13/EX13.16.1/Ex13_1.sce b/2300/CH13/EX13.16.1/Ex13_1.sce new file mode 100755 index 000000000..e42f8cd8f --- /dev/null +++ b/2300/CH13/EX13.16.1/Ex13_1.sce @@ -0,0 +1,17 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+ND=2*10^21//ND=donor concentration in m^-3 of an n-channel silicon JFET
+e=1.6*10^-19//e=charge of an electron
+E=12*8.854*10^-12//E=permittivity of the material where 12=dielectric constant of silicon(given)
+a=(4*10^-6)/2//2*a=channel width in metres and 2*a=4*10^-6
+Vp=(e*ND*(a^2))/(2*E)
+format("v",5)
+disp("V",Vp,"The pinch-off voltage is =")
+VGS=-2//VGS=gate source voltage
+//Vp=VDsat-VGS where VDsat=saturation voltage
+VDsat=Vp+VGS
+format("v",5)
+disp("V",VDsat,"The saturation voltage is =")
diff --git a/2300/CH13/EX13.16.10/Ex13_10.sce b/2300/CH13/EX13.16.10/Ex13_10.sce new file mode 100755 index 000000000..f90c17168 --- /dev/null +++ b/2300/CH13/EX13.16.10/Ex13_10.sce @@ -0,0 +1,12 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+IDS=-15//IDS=drain saturation current in terms of mA
+Vp=5//Vp=pinch-off voltage
+IDSS=-40//IDSS=saturation drain current in mA when VGS(gate-to-source voltage)=0V
+//By Shockley's equation
+//IDS=IDSS*(1-(VGS/Vp))^2
+VGS=Vp*(1-sqrt(IDS/IDSS))//VGS=gate-to-source voltage
+disp("V",VGS,"The gate-to-source voltage VGS is=")
diff --git a/2300/CH13/EX13.16.11/Ex13_11.sce b/2300/CH13/EX13.16.11/Ex13_11.sce new file mode 100755 index 000000000..48eb05ef0 --- /dev/null +++ b/2300/CH13/EX13.16.11/Ex13_11.sce @@ -0,0 +1,21 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+IDSS=10*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V
+Vp=-5//Vp=pinch-off voltage
+VDD=24//VDD=drain supply voltage
+VDS=8//VDS=drain-to-source voltage
+ID=4*10^-3//ID=drain current in Ampere
+R1=2*10^6//R1=resistance in the voltage divider network in ohms
+R2=1*10^6//R2=resistance in the voltage divider network in ohms
+VT=(R2/(R1+R2))*VDD//VT=Thevenin voltage
+//By Shockley's equation
+//ID=IDS=IDSS*(1-(VGS/Vp))^2
+VGS=Vp*(1-sqrt(ID/IDSS))//VGS=gate-to-source voltage
+//VGS=VT-(ID*Rs) where Rs=resistance connected at the source terminal
+Rs=(VT-VGS)/ID
+disp("kilo ohm",Rs/10^3,"The value of Rs =")//converting Rs in terms of kilo-ohm
+Rch=VDS/ID//Rch=channel resistance at the Q-point
+disp("kilo ohm",Rch/10^3,"The channel resistance at the Q-point is=")//converting Rch in terms of kilo-ohm
diff --git a/2300/CH13/EX13.16.12/Ex13_12.sce b/2300/CH13/EX13.16.12/Ex13_12.sce new file mode 100755 index 000000000..1292b397a --- /dev/null +++ b/2300/CH13/EX13.16.12/Ex13_12.sce @@ -0,0 +1,13 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+ID=5//ID=saturation drain current in terms of mA in an n-channel enhancement mode MOSFET
+VGS=8//VGS=gate-to-source voltage
+VT=4//VT=Threshold voltage
+VGS2=10//VGS2=gate-to-source voltage for which saturation drain current is to be calculated
+//ID=K*(VGS-VT)^2 where K=(IDSS/(Vp^2)) and Vp=pinch-off voltage ,IDSS=drain saturation current for VGS=0 V
+K=ID/((VGS-VT)^2)
+ID1=K*(VGS2-VT)^2//ID1=The saturation drain current for gate-source voltage of 10V i e VGS2
+disp("mA",ID1,"The saturation drain current for gate-source voltage of 10V is =")
diff --git a/2300/CH13/EX13.16.13/Ex13_13.sce b/2300/CH13/EX13.16.13/Ex13_13.sce new file mode 100755 index 000000000..92d2e197a --- /dev/null +++ b/2300/CH13/EX13.16.13/Ex13_13.sce @@ -0,0 +1,22 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+//For n-channel enhancement mode MOSFET operating in active region
+VT=2//VT=Threshold voltage
+K=0.5//K=(IDSS/(Vp^2)) in terms of mA/V^2
+VDD=15//VDD=drain supply voltage
+RL=1//RL=load resistance in kilo ohm
+R1=200*10^3//R1=resistance in the voltage divider network in terms of ohms
+R2=100*10^3//R2=resistance in the voltage divider network in terms of ohms
+VGS=(R2/(R1+R2))*VDD//VGS=gate-to-source voltage
+disp("V",VT,"Threshold voltage is =")
+disp("V",VGS,"The gate-to-source voltage VGS is =")
+ID=K*(VGS-VT)^2//ID=drain current in mA
+disp("mA",ID,"The value of drain current ID is =")
+VDS=VDD-(ID*RL)//VDS=drain-to-source voltage
+disp("V",VDS,"The value of drain-to-source voltage VDS is=")
+if (VDS>(VGS-VT)) then
+ disp("As VDS>(VGS-VT),(i.e. 10.5>(5-2)),the operation is indeed in the active region ")
+end
diff --git a/2300/CH13/EX13.16.14/Ex13_14.sce b/2300/CH13/EX13.16.14/Ex13_14.sce new file mode 100755 index 000000000..4d94f51fc --- /dev/null +++ b/2300/CH13/EX13.16.14/Ex13_14.sce @@ -0,0 +1,26 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+//For n-channel MOSFET operating in the depletion mode
+VDD=18//VDD=drain supply voltage
+VGS=0//VGS=gate-to-source voltage
+RL=600//RL=load resistance in ohms
+IDSS=18//IDSS=drain saturation current in mA for gate-to-source voltage (VGS)=0V
+Vp=-5//Vp=pinch-off voltage
+//Assuming that the operation is in the active region
+//ID=IDS=IDSS*(1-(VGS/Vp))^2
+//ID=(IDSS/Vp^2)(VGS-Vp)^2
+K=IDSS/(Vp^2)
+disp("mA/V^2",K,"The value of K is =")
+ID=IDSS//ID=drain current
+disp("mA",ID,"Since VGS=0,the value of ID=IDSS is=")
+VDS=VDD-(ID*(RL/10^3))//VDS=drain-to-source voltage and also converting RL in terms of kilo ohm
+disp("V",VDS,"The value of VDS is =")
+disp("V",Vp,"Pinch off voltage Vp is =")
+disp("V",VGS,"Gate to source voltage VGS is =")
+if (VDS>(VGS-Vp)) then
+ disp("As VDS>(VGS-Vp),(i.e.7.5>(0-(-5))),the MOSFET is actually in the active region ")
+end
+
diff --git a/2300/CH13/EX13.16.15/Ex13_15.sce b/2300/CH13/EX13.16.15/Ex13_15.sce new file mode 100755 index 000000000..831aac95a --- /dev/null +++ b/2300/CH13/EX13.16.15/Ex13_15.sce @@ -0,0 +1,20 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+//r given in textbook is taken as rd afterwards.Hence r=rd
+rd=100*10^3//rd=drain resistance in ohms
+gm=3500*10^-6//gm=transconductance in terms of A/V (or S)
+RL=5*10^3//RL=load resistance in ohms
+u=rd*gm//u=amplification factor
+AV=(u*RL)/(((u+1)*RL)+rd)//AV=voltage gain
+format("v",6)
+disp(AV,"The voltage gain is=")
+Ro=rd/(u+1)//Ro=output resistance excluding RL
+format("v",5)
+disp("ohm",Ro,"The output resistance excluding RL is =")
+Ro1=(rd*RL)/(rd+((u+1)*RL))//Ro1=Ro'=output resistance including RL
+format("v",6)
+disp("ohm",floor(Ro1),"The output resistance including RL is=")//floor function is used to round down the value
+
diff --git a/2300/CH13/EX13.16.16/Ex13_16.sce b/2300/CH13/EX13.16.16/Ex13_16.sce new file mode 100755 index 000000000..cc53992ed --- /dev/null +++ b/2300/CH13/EX13.16.16/Ex13_16.sce @@ -0,0 +1,15 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+//In a FET used in a CS amplifier
+IDSS=4//IDSS=drain saturation current in mA for gate-to-source voltage (VGS)=0V
+Vp=-3//Vp=pinch-off voltage
+RL=10//RL=load resistance in kilo ohms
+VGS=-0.7//VGS=gate-to-source voltage
+gmo=-(2*IDSS)/Vp//gmo=transconductance in A/V of a JFET when VGS=0V
+gm=gmo*(1-(VGS/Vp))//gm=transconductance
+AV=-gm*RL//AV=the small signal voltage gain
+disp(AV,"The small signal voltage gain is =")
+//Decimal term in the answer displayed in textbook is incorrect as 2.04*10=20.4 and not 20.04.
diff --git a/2300/CH13/EX13.16.2/Ex13_2.sce b/2300/CH13/EX13.16.2/Ex13_2.sce new file mode 100755 index 000000000..614fef170 --- /dev/null +++ b/2300/CH13/EX13.16.2/Ex13_2.sce @@ -0,0 +1,9 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+VGS=-1.5//VGS=gate-to-source voltage of a JFET
+IDsat=5*10^-3//IDsat=drain saturation current in Ampere
+RS=(abs(VGS))/(abs(IDsat))//RS=resistance to be calculated=|VGS| / |IDsat|
+disp("ohm",RS,"Resistance to be calculated is =")
diff --git a/2300/CH13/EX13.16.3/Ex13_3.sce b/2300/CH13/EX13.16.3/Ex13_3.sce new file mode 100755 index 000000000..e15f85f45 --- /dev/null +++ b/2300/CH13/EX13.16.3/Ex13_3.sce @@ -0,0 +1,17 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+VGS1=-1
+VGS2=-1.5//VGS1,VGS2=change in VGS(gate-to-source voltage) from VGS1 to VGS2 keeping VDS(drain-to-source voltage) constant
+ID1=7*10^-3
+ID2=5*10^-3//ID1,ID2=change in ID(drain current) in Ampere from ID1 to ID2
+//gm=(id/vgs)|VDS=constant where gm=transconductance
+id=ID1-ID2
+vgs=VGS1-VGS2
+gm=id/vgs
+disp("mA/V",gm*10^3,"The transconductance of the FET is =")
+rd=200*10^3//rd=ac drain resistance in ohms
+u=rd*gm//u=amplification factor
+disp(u,"The amplification factor of the FET is =")
diff --git a/2300/CH13/EX13.16.4/Ex13_4.sce b/2300/CH13/EX13.16.4/Ex13_4.sce new file mode 100755 index 000000000..7acda2d40 --- /dev/null +++ b/2300/CH13/EX13.16.4/Ex13_4.sce @@ -0,0 +1,14 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+RL=250*10^3//RL=load resistance in ohms in a FET amplifier
+rd=100*10^3//rd=ac drain resistance in ohms
+gm=0.5*10^-3//gm=transconductance in A/V
+u=rd*gm//u=amplification factor
+AV=-(u*RL)/(rd+RL)//AV=voltage gain
+disp(AV,"The voltage gain of FET amplifier is =")
+disp("kilo ohm",rd/1000,"The output resistance excluding RL is rd=")
+ro=(rd*RL)/(rd+RL)//ro=output resistance including RL
+disp("kilo ohm",ro/1000,"Including RL,the output resistance is=")
diff --git a/2300/CH13/EX13.16.5/Ex13_5.sce b/2300/CH13/EX13.16.5/Ex13_5.sce new file mode 100755 index 000000000..1191fcc56 --- /dev/null +++ b/2300/CH13/EX13.16.5/Ex13_5.sce @@ -0,0 +1,16 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+//For n-channel JFET
+IDSS=12*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V
+Vp=-4//Vp=pinch-off voltage
+VGS=-2//VGS=gate-to-source voltage
+//By Shockley's equation
+IDS=IDSS*(1-(VGS/Vp))^2//IDS=saturation drain current to be calculated for given value of VGS
+disp("mA",IDS/10^-3,"The drain current for given value of VGS is=")
+gmo=4*10^-3//gmo=transconductance in A/V of a JFET when VGS=0V
+//gmo=-(2*IDSS)/Vp
+Vp=-(2*IDSS)/gmo//Vp=pinch-off voltage to be calculated for given value of transconductance
+disp("V",Vp,"The pinch-off voltage for given value of gmo is =")
diff --git a/2300/CH13/EX13.16.6/Ex13_6.sce b/2300/CH13/EX13.16.6/Ex13_6.sce new file mode 100755 index 000000000..59d58beb9 --- /dev/null +++ b/2300/CH13/EX13.16.6/Ex13_6.sce @@ -0,0 +1,38 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+IDSS=12*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V
+Vp=-4//Vp=pinch-off voltage
+VDD=30//VDD=drain supply voltage
+RL=5*10^3//RL=load resistance in ohms
+Rs=600//Rs=resistance connected to source terminal in ohms
+Rg=1.5*10^6//Rg=resistance connected to gate terminal in ohms
+//By Shockley's equation
+//IDS=IDSS*(1-(VGS/Vp))^2 where IDS=saturation drain current to be calculated for given value of VGS
+//Substituting VGS=(-ID*Rs) we get ID=IDS
+//ID=IDSS*(1+((ID*Rs)/Vp))^2
+//ID=12*(1+((0.6*ID)/-4))^2 where ID is obtained in mA
+//(0.27*ID^2)-(4.6*ID)+12=0.........(1)
+ID1=(4.6+sqrt((4.6^2)-(48*0.27)))/(2*0.27)
+format("v",5)
+ID2=(4.6-sqrt((4.6^2)-(48*0.27)))/(2*0.27)//ID1,ID2 are the 2 roots of the above equation (1)
+format("v",5)
+disp("mA",ID1,"ID1=")
+disp("mA",ID2,"ID2=")
+if (ID1>(IDSS/10^-3)) then//IDSS is converted in terms of mA
+ disp("mA",ID1,"As ID1>IDSS ,the value rejected is ID1=")
+end
+if (ID2>(IDSS/10^-3)) then//IDSS is converted in terms of mA
+ disp("mA",ID2,"As ID2>IDSS ,the value rejected is ID2=")
+end
+disp("mA",ID2,"Therefore,the drain current is =")
+ID=ID2*10^-3//converting ID2 in terms of Ampere
+VDS=VDD-ID*(RL+Rs)//VDS=drain-to-source voltage
+disp("V",VDS,"The value of drain-to-source voltage VDS is =")
+VGS=-ID*Rs//VGS=gate-to-source voltage
+disp("V",VGS,"The value of gate-to-source voltage VGS is=")
+if(Vp<0 & VDS>(VGS-Vp))
+ disp("As Vp=(-4)<VGS<0V and VDS=12V>(VGS-Vp),it is verified that the JFET is in the saturation region of the drain characteristics")
+end
diff --git a/2300/CH13/EX13.16.7/Ex13_7.sce b/2300/CH13/EX13.16.7/Ex13_7.sce new file mode 100755 index 000000000..7aac81ba6 --- /dev/null +++ b/2300/CH13/EX13.16.7/Ex13_7.sce @@ -0,0 +1,39 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+IDSS=10*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V
+Vp=-2//Vp=pinch-off voltage
+VDD=20//VDD=drain supply voltage
+RL=1*10^3//RL=load resistance in ohms
+Rs=2*1000//Rs=resistance connected to source terminal in ohms
+R1=12*10^6//R1=resistance in the voltage divider network in ohms
+R2=8*10^6//R2=resistance in the voltage divider network in ohms
+VT=(R2/(R1+R2))*VDD//VT=Thevenin voltage
+//VGS=VT-(ID*Rs)
+//By Shockley's equation
+//IDS=IDSS*(1-(VGS/Vp))^2 where IDS=saturation drain current to be calculated for given value of VGS
+//Substituting VGS=(VGS-ID*Rs) we get ID=IDS
+//(10*ID^2)-(101*ID)+250=0.........(1)where ID is obtained in mA
+ID1=(101+sqrt((101^2)-(40*250)))/(2*10)
+format("v",5)
+ID2=(101-sqrt((101^2)-(40*250)))/(2*10)//ID1,ID2 are the 2 roots of the above equation (1)
+format("v",5)
+disp("mA",ID1,"ID1=")
+disp("mA",ID2,"ID2=")
+//For ID1
+VGS=VT-(ID1*Rs)//VGS=gate-to-source voltage calculated for ID1
+if (Vp>VGS) then
+ disp("mA",ID1,"As Vp>(VGS calculated using ID1), the value rejected is ID1=")
+end
+disp("mA",ID2,"Therefore,the drain current is =")
+ID=ID2*10^-3//converting ID2 in terms of Amperes
+VGS=VT-(ID*Rs)//VGS=gate-to-source voltage
+disp("V",VGS,"VGS=")
+VDS=VDD-(ID*(RL+Rs))//VDS=drain-to-source voltage
+format("v",2)
+disp("V",VDS,"VDS=")
+if(Vp<VGS & VDS>(VGS-Vp))
+ disp("As Vp=(-2)<(VGS=-0.68V) and VDS=7V>(VGS-Vp),it is checked that the JFET operates in the saturation region ")
+end
diff --git a/2300/CH13/EX13.16.8/Ex13_8.sce b/2300/CH13/EX13.16.8/Ex13_8.sce new file mode 100755 index 000000000..6e9b2a1db --- /dev/null +++ b/2300/CH13/EX13.16.8/Ex13_8.sce @@ -0,0 +1,16 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+//For a n-channel JFET
+IDSS=10*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V
+Vp=(-4)//Vp=pinch-off voltage
+VGS=(-2.5)//VGS=gate-to-source voltage
+//By Shockley's equation
+IDS=IDSS*(1-(VGS/Vp))^2//IDS=saturation drain current to be calculated for given value of VGS
+format("v",5)
+disp("mA",IDS/10^-3,"The drain current for given value of VGS is=")//converting IDS in terms of mA
+VDSmin=VGS-Vp//VDSmin=minimum value of drain-to-source voltage for the onset of the saturation region
+format("v",5)
+disp("V",VDSmin,"The minimum value of VDS for saturation is=")
diff --git a/2300/CH13/EX13.16.9/Ex13_9.sce b/2300/CH13/EX13.16.9/Ex13_9.sce new file mode 100755 index 000000000..174ec208a --- /dev/null +++ b/2300/CH13/EX13.16.9/Ex13_9.sce @@ -0,0 +1,18 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+VDD=20//VDD=drain supply voltage
+IDS=0.9//IDS=drain saturation current in terms of mA
+Vp=-3//Vp=pinch-off voltage
+IDSS=8//IDSS=saturation drain current in mA when VGS(gate-to-source voltage)=0V
+//By Shockley's equation
+//IDS=IDSS*(1-(VGS/Vp))^2
+VGS=Vp*(1-sqrt(IDS/IDSS))//VGS=gate-to-source voltage
+disp("V",VGS,"The gate-to-source voltage VGS is=")
+//gm=(dIDS/dVGS)|VDS=constant where gm=transconductance
+gm=-((2*IDSS)/Vp)*(1-(VGS/Vp))
+format("v",5)
+disp("mS",gm,"The value of transconductance is=")
+
diff --git a/2300/CH14/EX14.12.1/Ex14_1.sce b/2300/CH14/EX14.12.1/Ex14_1.sce new file mode 100755 index 000000000..8e316f01c --- /dev/null +++ b/2300/CH14/EX14.12.1/Ex14_1.sce @@ -0,0 +1,14 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 14 Integrated Circuits and Operational Amplifiers
+clc
+clear
+R1=1000//R1=input resistance in ohms in the inverting amplifier circuit
+Rf=3*1000//Rf=feedback resistance in ohms
+v1=2//v1=input voltage in the inverting terminal of an amplifier circuit
+vo=-(Rf/R1)*v1//vo=output voltage
+disp("V",vo,"Output voltage is=")
+disp("Output voltage is negative as it is the circuit of inverting amplifier")
+disp("kilo ohm",R1/1000,"Input resistance Rin=R1 is =")
+i=v1/R1//i=input current
+disp("mA",i*1000,"The input currrent is =")
diff --git a/2300/CH14/EX14.12.2/Ex14_2.sce b/2300/CH14/EX14.12.2/Ex14_2.sce new file mode 100755 index 000000000..c6e165ef9 --- /dev/null +++ b/2300/CH14/EX14.12.2/Ex14_2.sce @@ -0,0 +1,9 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 14 Integrated Circuits and Operational Amplifiers
+clc
+clear
+R1=2*1000//R1=input resistance in ohms in the non-inverting amplifier circuit
+Rf=5*1000//Rf=feedback resistance in ohms
+AV=1+(Rf/R1)//AV=voltage gain of the non-inverting amplifier circuit
+disp(AV,"The voltage gain of the given non-inverting amplifier circuit is =")
diff --git a/2300/CH14/EX14.12.3/Ex14_3.sce b/2300/CH14/EX14.12.3/Ex14_3.sce new file mode 100755 index 000000000..ed45ef486 --- /dev/null +++ b/2300/CH14/EX14.12.3/Ex14_3.sce @@ -0,0 +1,32 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 14 Integrated Circuits and Operational Amplifiers
+clc
+clear
+//First case
+v1=40*10^-6//v1=voltage applied to the non-inverting input terminal
+v2=-40*10^-6//v2=voltage applied to the inverting input terminal
+vo=100*10^-3//vo=output voltage for the above inputs v1 and v2
+//Second case
+V1=40*10^-6//V1=voltage applied to the non-inverting input terminal
+V2=40*10^-6//V2=voltage applied to the inverting input terminal
+Vo=0.4*10^-3//Vo=output voltage for the above inputs V1 and V2
+disp("In first case:")
+vd=v1-v2//vd=difference signal voltage
+disp("µV",vd/10^-6,"vd=")
+vc=(v1+v2)/2//vc=common mode signal voltage
+format("v",5)
+disp("µV",vc/10^-6,"vc=")
+//Output voltage is vo=(Ad*vd)+(Ac*vc) where Ad and Ac are the voltage gains for the difference signal and the common-mode signal,respectively
+Ad=vo/vd//Ad calculated in first case as common mode signal vc=0
+disp(Ad,"Voltage gain for the difference signal is Ad =")
+disp("In second case:")
+Vd=V1-V2//Vd=difference signal voltage
+disp("µV",Vd/10^-6,"Vd=")
+Vc=(V1+V2)/2//Vc=common mode signal voltage
+format("v",5)
+disp("µV",Vc/10^-6,"Vc=")
+Ac=Vo/Vc//Ac calculated in second case as difference signal Vc=0
+disp(Ac,"Voltage gain for the common-mode signal is Ac =")
+CMRR=abs(Ad/Ac)//CMRR=Common Mode Rejection Ratio=|Ad/Ac|
+disp(CMRR,"Common Mode Rejection Ratio is CMRR=")
diff --git a/2300/CH14/EX14.12.4/Ex14_4.sce b/2300/CH14/EX14.12.4/Ex14_4.sce new file mode 100755 index 000000000..80302efcf --- /dev/null +++ b/2300/CH14/EX14.12.4/Ex14_4.sce @@ -0,0 +1,16 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 14 Integrated Circuits and Operational Amplifiers
+clc
+clear
+R1=1*1000//R1=input resistance in ohms in the inverting terminal of the amplifier circuit
+R2=200//R2=input resistance in ohms in the inverting terminal of the amplifier circuit
+R3=400//R3=input resistance in ohms in the inverting terminal of the amplifier circuit
+Rf=500//Rf=feedback resistance in ohms
+v1=-5//v1=input voltage in the inverting terminal of an amplifier circuit at R1 resistor
+v2=3//v2=input voltage in the inverting terminal of an amplifier circuit at R2 resistor
+v3=4//v3=input voltage in the inverting terminal of an amplifier circuit at R3 resistor
+vo=-(((Rf/R1)*v1)+((Rf/R2)*v2)+((Rf/R3)*v3))//vo=output voltage for inverting summing summing amplifier circuit
+disp("V",vo,"Output voltage of the 3-input summing amplifier circuit is =")
+disp("Output voltage is negative as it the circuit of inverting summing amplifier")
+
diff --git a/2300/CH14/EX14.12.5/Ex14_5.sce b/2300/CH14/EX14.12.5/Ex14_5.sce new file mode 100755 index 000000000..1c3ba4b12 --- /dev/null +++ b/2300/CH14/EX14.12.5/Ex14_5.sce @@ -0,0 +1,24 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 14 Integrated Circuits and Operational Amplifiers
+clc
+clear
+R1=1*1000//R1=input resistance in ohms in the inverting amplifier circuit
+Rf=50*1000//Rf=feedback resistance in ohms
+A=-(Rf/R1)//AV=voltage gain of the inverting amplifier circuit
+disp(A,"The voltage gain of the given inverting amplifier circuit is =")
+//vin=0.5*sin(100*%pi*t)
+//vout=A*vin=-50*0.5*sin(100*%pi*t)=-25*sin(100*%pi*t)
+disp("If the operation were entirely linear ,the output voltage would have been -25*sin(100*%pi*t)")
+disp("But since the voltage supply is +-12V ,the op-amp is saturated when |vout| attains 12V")
+//Let at time t=to,vout=-12V
+//-12=-25*sin(100*%pi*to)
+to=(1/(100*%pi))*asin(12/25)
+format("v",8)
+disp("s",to,"to=")
+disp("Thus over the entire cycle,")
+disp("vout=-25*sin(100*%pi*t) V when 0<=t<=to")
+disp("vout=-12V when to<=t<=(0.01-to)")
+disp("vout=-25*sin(100*%pi*t) V when (0.01-to)<=t<=(0.01+to)")
+disp("vout=+12V when (0.01+to)<=t<=(0.02-to)")
+disp("vout=-25*sin(100*%pi*t) V when (0.02-to)<=t<=0.02 seconds")
diff --git a/2300/CH14/EX14.12.6/Ex14_6.sce b/2300/CH14/EX14.12.6/Ex14_6.sce new file mode 100755 index 000000000..35e314134 --- /dev/null +++ b/2300/CH14/EX14.12.6/Ex14_6.sce @@ -0,0 +1,13 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 14 Integrated Circuits and Operational Amplifiers
+clc
+clear
+R=2*1000//R=feedback resistance in ohms in the differentiator circuit
+C=0.01*10^-6//C=input capacitance in farad in the differentiator circuit
+//dvi/dt=1.5V/1ms for 0<t<1ms (given ramp input signal)
+//output voltage of a differentiator is given as vo=-RC(dvi/dt)
+d=1.5/(10^-3)//d=dvi/dt=1.5V/1ms
+vo=-R*C*d
+disp("V",vo,"Output voltage of a differentiator is ")
+disp("Hence for <t<1 ms,vo=-0.03V=-30mV.Otherwise,vo=0V")
diff --git a/2300/CH14/EX14.12.8/Ex14_8.sce b/2300/CH14/EX14.12.8/Ex14_8.sce new file mode 100755 index 000000000..c5bc5d07d --- /dev/null +++ b/2300/CH14/EX14.12.8/Ex14_8.sce @@ -0,0 +1,12 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 14 Integrated Circuits and Operational Amplifiers
+clc
+clear
+R1=5*1000//R1=input resistance in ohms in the given op-amp circuit
+Rf=10*1000//Rf=feedback resistance in ohms
+vi=5//vi=input voltage at the inverting terminal of an op-amp
+V=4//V=voltage at the non-inverting terminal of an op-amp
+//By applying superposition theorem
+Vo=((1+(Rf/R1))*V)+(-(Rf/R1)*vi)
+disp("V",Vo,"Output voltage Vo of the circuit is =")
diff --git a/2300/CH14/EX14.12.9/Ex14_9.sce b/2300/CH14/EX14.12.9/Ex14_9.sce new file mode 100755 index 000000000..9aa357e6a --- /dev/null +++ b/2300/CH14/EX14.12.9/Ex14_9.sce @@ -0,0 +1,25 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 14 Integrated Circuits and Operational Amplifiers
+clc
+clear
+R1=10*1000//R1=resistance in ohms
+R2=100//R2=resistance in ohms
+R3=10*1000//R3=resistance in ohms
+R4=10*1000//R4=resistance in ohms
+R5=10*1000//R5=resistance in ohms
+//Since the voltage gains of the OP AMPs are infinite,the voltages of the points X and Y in the given figure are V1 and V2 respectively
+//Applying Kirchhoff's current law at X
+//(V1/R1)+((V1-V)/R3)+((V1-V2)/R2)=0
+//Applying Kirchhoff's current law at Y
+//((V2-V)/R4)+((V2-V1)/R2)+((V2-Vo)/R5)=0
+//Eliminating V from the above equations
+//V2*((1/R2)+(1/R4)+(1/R5)+(R3/(R2*R4)))-V1*((1/R2)+(1/R4)+((R3/R4)*((1/R1)+(1/R2))))=Vo/R5
+//V2*R-V1*r=Vo/R5...................(1)
+R=((1/R2)+(1/R4)+(1/R5)+(R3/(R2*R4)))
+r=((1/R2)+(1/R4)+((R3/R4)*((1/R1)+(1/R2))))
+disp(R,"R=")
+disp(r,"r=")
+//R=r from above calculation and its answer displayed
+//Hence from the above equation (1) A=Vo/(V1-V2)=-(R5*R)=-(R5*r)
+disp(-R5*r,"Differential mode gain A=Vo/(V1-V2)=")
diff --git a/2300/CH15/EX15.7.1/Ex15_1.sce b/2300/CH15/EX15.7.1/Ex15_1.sce new file mode 100755 index 000000000..5d5fca652 --- /dev/null +++ b/2300/CH15/EX15.7.1/Ex15_1.sce @@ -0,0 +1,31 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 15 Active Filters
+clc
+clear
+fc=1000//fc=given cut-off frequency in Hz
+A=-56//A=required gain to be dropped by this much amount in dB
+//Also,A=normalized gain of Butterworth filter=|A(jw)/Ao|
+f=10*1000//f=given frequency in Hz where the normalized gain is dropped by given amount
+//|A(jw)/Ao|=(-20)*n*log10(w/wc) where n=order of the filter
+//|A(jw)/Ao|=(-20)*n*log10(f/fc)
+n=A/((-20)*log10(f/fc))//n=order of Butterworth low-pass filter
+disp(ceil(n),"Order of given filter to be designed is (n)=")
+//As n=3 (from above calculation) we need cascading of first-order section and second-order section
+//For n=3
+k=0.5//k=damping factor
+Ao=3-(2*k)//Ao=DC gain for each op-amp in a given Butterworth Filter to be designed
+R1=10*1000//R1=Assumed resistance in ohms
+//Ao=(R1+R2)/R1
+R2=(Ao*R1)-R1
+//fc=1/(2*%pi*R*C)
+R=1000//R=Assumed resistance in ohms
+C=1/(2*%pi*R*fc)
+format("v",5)
+disp("The designed values of resistance and capacitance for a low-pass Butterworth filter are:")
+disp("kilo ohm",R1/1000,"R1=")
+disp("kilo ohm",R2/1000,"R2=")
+disp("kilo ohm",R/1000,"R=")
+disp("micro Farad",C/10^-6,"C=")
+
+
diff --git a/2300/CH15/EX15.7.2/Ex15_2.sce b/2300/CH15/EX15.7.2/Ex15_2.sce new file mode 100755 index 000000000..3353859a2 --- /dev/null +++ b/2300/CH15/EX15.7.2/Ex15_2.sce @@ -0,0 +1,18 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 15 Active Filters
+clc
+clear
+Ao=5//Ao=high frequency gain of a given first-order Butterworth active HP filter
+//Ao=(R1+R2)/R1
+R1=1000//R1=Assumed resistance in ohms
+R2=(Ao*R1)-R1
+fc=200//fc=given cut-off frequency in Hz
+//fc=1/(2*%pi*R*C)
+R=5*1000//R=Assumed resistance in ohms
+C=1/(2*%pi*R*fc)
+disp("The designed values of resistance and capacitance for a high-pass Butterworth filter are:")
+disp("kilo ohm",R1/1000,"R1=")
+disp("kilo ohm",R2/1000,"R2=")
+disp("kilo ohm",R/1000,"R=")
+disp("micro Farad",C/10^-6,"C=")
diff --git a/2300/CH15/EX15.7.3/Ex15_3.sce b/2300/CH15/EX15.7.3/Ex15_3.sce new file mode 100755 index 000000000..cfe64e760 --- /dev/null +++ b/2300/CH15/EX15.7.3/Ex15_3.sce @@ -0,0 +1,24 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 15 Active Filters
+clc
+clear
+fo=1000//fo=centre frequency in Hz
+f=100//f=bandwidth in Hz
+//Q=wo/w=Quality factor
+Q=(2*%pi*fo)/(2*%pi*f)
+C1=0.02*10^-6
+C2=0.02*10^-6//C1=C2=Assumed Capacitances in Farad
+Ao=2//Ao=gain at the centre frequency
+//R1*C1=Q/(wo*Ao) for active band pass Butterworth filter
+wo=2*%pi*fo
+R1=Q/(Ao*wo*C1)
+R3=Q/(wo*((C1*C2)/(C1+C2)))
+Rp=1/((wo^2)*R3*C1*C2)
+R2=(R1*Rp)/(R1-Rp)
+disp("The designed values of resistance and capacitance for a second order band-pass Butterworth filter are:")
+disp("kilo ohm",ceil(R1/1000),"R1=")//floor() and ceil() functions are used in order to get truncated floating values as per the requirement
+disp("ohm",floor(R2),"R2=")
+disp("kilo ohm",ceil(R3/1000),"R3=")
+disp("micro Farad",C1/10^-6,"C1=")
+disp("micro Farad",C2/10^-6,"C2=")
diff --git a/2300/CH15/EX15.7.4/Ex15_4.sce b/2300/CH15/EX15.7.4/Ex15_4.sce new file mode 100755 index 000000000..4dcb457e2 --- /dev/null +++ b/2300/CH15/EX15.7.4/Ex15_4.sce @@ -0,0 +1,32 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 15 Active Filters
+clc
+clear
+fo=400//fo=centre frequency in Hz
+Q=10//Q=wo/w=Quality factor
+C1=0.1*10^-6
+C2=0.1*10^-6//C1=C2=Assumed Capacitances in Farad
+Ao=2//Ao=gain at the centre frequency
+//R1*C1=Q/(wo*Ao) for active band pass Butterworth filter
+wo=2*%pi*fo
+R1=Q/(Ao*wo*C1)
+format("v",6)
+R3=Q/(wo*((C1*C2)/(C1+C2)))
+Rp=1/((wo^2)*R3*C1*C2)
+R2=(R1*Rp)/(R1-Rp)
+//Assuming arbitrarily (R6/R5)=10=a
+a=10
+R6=10*1000//R6=Assumed resistance in ohms
+R5=R6/a
+R4=R5/Ao
+disp("The designed values of resistance and capacitance for a notch filter are:")
+disp("kilo ohm",(R1/1000),"R1=")
+disp("ohm",(R2),"R2=")
+disp("kilo ohm",(R3/1000),"R3=")
+disp("ohm",R4,"R4=")
+disp("kilo ohm",(R5/1000),"R5=")
+disp("kilo ohm",(R6/1000),"R6=")
+disp("micro Farad",C1/10^-6,"C1=")
+disp("micro Farad",C2/10^-6,"C2=")
+
diff --git a/2300/CH16/EX16.10.1/Ex16_1.sce b/2300/CH16/EX16.10.1/Ex16_1.sce new file mode 100755 index 000000000..80a019b59 --- /dev/null +++ b/2300/CH16/EX16.10.1/Ex16_1.sce @@ -0,0 +1,14 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 16 Special Devices
+clc
+clear
+Vp=15//Vp=firing voltage of a unijunction transistor in Volts
+VBB=40//VBB=source voltage in Volts
+n=(Vp/VBB)//n=intrinsic stand-off ratio
+disp(n,"The intrinsic stand-off ratio is ")
+R=50*(10^3)//R=resistance in ohms
+C=2000*(10^-12)//c=capacitance in farad
+T=(R*C*log(1/(1-n)))*(10^6)//T=time period of the sawtooth voltage across C
+format("v",7)
+disp("microseconds",T,"The time period is ")
diff --git a/2300/CH17/EX17.17.1/Ex17_1.sce b/2300/CH17/EX17.17.1/Ex17_1.sce new file mode 100755 index 000000000..e255fcaa7 --- /dev/null +++ b/2300/CH17/EX17.17.1/Ex17_1.sce @@ -0,0 +1,11 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 17 Number Systems,Boolean Algebra,and Digital Circuits
+clc
+clear
+x=25
+s=dec2bin(x)
+disp(,s,"1 Binary equivalent of 25 is ")
+y=576
+s1=dec2bin(y)
+disp(,s1,"2 Binary equivalent of 576 is ")
diff --git a/2300/CH17/EX17.17.10/Ex17_10.sce b/2300/CH17/EX17.17.10/Ex17_10.sce new file mode 100755 index 000000000..c3a5cc101 --- /dev/null +++ b/2300/CH17/EX17.17.10/Ex17_10.sce @@ -0,0 +1,17 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 17 Number Systems,Boolean Algebra,and Digital Circuits
+clc
+clear
+A=0
+B=0
+C=bitor(A,B)//bitwise OR operation is performed
+disp(C,"Boolean expression C=A+B for inputs A=0 and B=0 is")
+A=1
+B=0
+C=bitor(A,B)
+disp(C,"Boolean expression C=A+B for inputs A=1 and B=0 is")
+A=1
+B=1
+C=bitor(A,B)
+disp(C,"Boolean expression C=A+B for inputs A=1 and B=1 is")
diff --git a/2300/CH17/EX17.17.2/Ex17_2.sce b/2300/CH17/EX17.17.2/Ex17_2.sce new file mode 100755 index 000000000..d39d784dd --- /dev/null +++ b/2300/CH17/EX17.17.2/Ex17_2.sce @@ -0,0 +1,8 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 17 Number Systems,Boolean Algebra,and Digital Circuits
+clc
+clear
+s='1111'
+x=bin2dec(s)
+disp(,x,"Decimal equivalent of 1111 is ")
diff --git a/2300/CH17/EX17.17.3/Ex17_3.sce b/2300/CH17/EX17.17.3/Ex17_3.sce new file mode 100755 index 000000000..dc9333461 --- /dev/null +++ b/2300/CH17/EX17.17.3/Ex17_3.sce @@ -0,0 +1,43 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 17 Number Systems,Boolean Algebra,and Digital Circuits
+clc
+clear
+p=1;
+//initialising variables
+q=1;
+z=0;
+b=0;
+w=0;
+f=0;
+format('v',18);//increasing the precision to 18 .
+bin=11.1101;
+d=modulo(bin,1);//separating the decimal part and the integer part
+d=d*10^10;
+a=floor(bin);//removing the decimal part
+while(a>0)//loop to take the binary bits of integer into a matrix
+r=modulo(a,10);
+b(1,q)=r;
+a=a/10;
+a= floor(a);
+q=q+1;
+end
+for m=1:q-1//multiplying the bits of integer with their position values and adding
+c=m-1;
+f=f+b(1,m)*(2^c);
+end
+while(d>0)//loop to take the binary bits of decimal into a matrix
+e=modulo(d,2)
+w(1,p)=e
+d=d /10;
+d=floor(d)
+p=p+1;
+end
+for n=1:p-1//multiplying the bits of decimal with their position values and adding
+z=z+w(1,n) *(0.5) ^(11-n);
+end
+z=z*10000;
+//rounding of to 4 decimal values
+z=round(z);
+z=z/10000;
+printf("The decimal equivalent of 11.1101 is = %f" ,f+z)
diff --git a/2300/CH17/EX17.17.4/Ex17_4.sce b/2300/CH17/EX17.17.4/Ex17_4.sce new file mode 100755 index 000000000..13387d2dc --- /dev/null +++ b/2300/CH17/EX17.17.4/Ex17_4.sce @@ -0,0 +1,29 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 17 Number Systems,Boolean Algebra,and Digital Circuits
+clc
+clear
+q=0;
+b=0;
+s=0;
+format('v',18);//increasing the precision to 18 .
+a=4.625;
+d=modulo(a,1);//separating the decimal part and the integer part
+a=floor(a);//removing the decimal part
+while(a>0)//taking integer part into a matrix and converting into equivalent binary
+x=modulo(a,2);
+b=b+(10^q)*x;
+a=a/2;
+a=floor(a);
+q=q+1;
+end
+for i=1:10//for values after decimal point converting into binary
+d=d*2;
+q=floor(d);
+s=s+q/(10^i);
+if d>=1 then
+d=d-1;
+end
+end
+k=b+s;
+printf ("The binary equivalent of 4.625 is = %f" ,k);
diff --git a/2300/CH17/EX17.17.5/Ex17_5.sce b/2300/CH17/EX17.17.5/Ex17_5.sce new file mode 100755 index 000000000..0665fd960 --- /dev/null +++ b/2300/CH17/EX17.17.5/Ex17_5.sce @@ -0,0 +1,9 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 17 Number Systems,Boolean Algebra,and Digital Circuits
+clc
+clear
+dec=263
+base=5
+s=dec2base(dec,base)
+disp(,s,"Equivalent of 263 in a code base 5 is ")
diff --git a/2300/CH17/EX17.17.6/Ex17_6.sce b/2300/CH17/EX17.17.6/Ex17_6.sce new file mode 100755 index 000000000..6e7285df5 --- /dev/null +++ b/2300/CH17/EX17.17.6/Ex17_6.sce @@ -0,0 +1,9 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 17 Number Systems,Boolean Algebra,and Digital Circuits
+clc
+clear
+x=2
+s=x+x
+s1=dec2bin(s)
+disp(,s1,"Binary addition corresponding to decimal addition 2+2 is ")
diff --git a/2300/CH17/EX17.17.7/Ex17_7.sce b/2300/CH17/EX17.17.7/Ex17_7.sce new file mode 100755 index 000000000..d03820b1b --- /dev/null +++ b/2300/CH17/EX17.17.7/Ex17_7.sce @@ -0,0 +1,19 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 17 Number Systems,Boolean Algebra,and Digital Circuits
+clc
+clear
+x='11111'
+y='1011'
+z='101'
+w='10'
+v='1'
+s1=bin2dec(x)
+s2=bin2dec(y)
+s3=bin2dec(z)
+s4=bin2dec(w)
+s5=bin2dec(v)
+a=s1+s2+s3+s4+s5
+b=dec2bin(a)
+disp(,b,"Binary addition of 11111+1011+101+10+1 is ")
+disp(,a,"Decimal equivalent corresponding to above binary addition is ")
diff --git a/2300/CH17/EX17.17.8/Ex17_8.sce b/2300/CH17/EX17.17.8/Ex17_8.sce new file mode 100755 index 000000000..de670c044 --- /dev/null +++ b/2300/CH17/EX17.17.8/Ex17_8.sce @@ -0,0 +1,12 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 17 Number Systems,Boolean Algebra,and Digital Circuits
+clc
+clear
+x='1101'
+y='111'
+s1=bin2dec(x)
+s2=bin2dec(y)
+a=s1-s2
+s=dec2bin(a)
+disp(,s,"Binary subtraction 1101-111 is =")
diff --git a/2300/CH17/EX17.17.9/Ex17_9.sce b/2300/CH17/EX17.17.9/Ex17_9.sce new file mode 100755 index 000000000..26c5de376 --- /dev/null +++ b/2300/CH17/EX17.17.9/Ex17_9.sce @@ -0,0 +1,33 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 17 Number Systems,Boolean Algebra,and Digital Circuits
+clc
+clear
+hFE=30//hFE=dc current gain of given silicon transistor
+VBE=0.8//VBE=base-emitter voltage drop at saturation
+VCE=0.2//VCE=collector-emitter voltage drop at saturation
+R1=15*1000//resistance at the base side of the transistor in ohms
+R2=100*1000//another resistance at the base side of the transistor in ohms
+RL=2*1000//load resistance at the collector side of the transistor in ohms
+VCC=10//VCC=collector supply voltage
+VBB=-10//VBB=base supply voltage
+//If the input level is 0 volt i e vi=0,the open-circuited base voltage is given as
+VB=VBB*(R1/(R1+R2))
+disp("For input level 0 V:")
+disp("As a bias of approximately 0 V is sufficient to cut off a silicon emitter junction ,it follows that transistor is cut off when vi=0")
+disp("V",VCC,"When vi=0,the output voltage is vo=VCC=")
+disp("This indicates that the output is in state 1 when the input is in state 0")
+//When the input level is 10 volt i e vi=10, we have to show that the transistor is in saturation
+//The minimum base current for saturation is given by iB(min)=iC/hFE
+iC=(VCC-VCE)/RL//collector current when the transistor saturates
+iB=iC/hFE//iB=iB(min)=minimum base current for saturation in mA
+i1=(10-VBE)/R1//i1=current through R1 resistor connected at the base side and here vi=10 is taken
+i2=(VBE-VBB)/R2//i2=current through R2 resistor connected at the base side
+iB1=i1-i2//iB1=actual base current
+disp("For input level 10 V:")
+if (iB1>iB) then
+ disp("Since iB>iB(min),it is verified that the transistor is in saturation")//iB indicates actual base current & iB(min) indicates minimum base current for saturation
+ disp("V",VCE,"When vi=10,the output voltage is vo=VCE(sat)=")
+ disp("This indicates that the output is in state 0 when the input is in state 1")
+end
+disp("Overall it has been thus verified that the circuit has performed the NOT operation")
diff --git a/2300/CH19/EX19.29.1/Ex19_1.sce b/2300/CH19/EX19.29.1/Ex19_1.sce new file mode 100755 index 000000000..94334c3f1 --- /dev/null +++ b/2300/CH19/EX19.29.1/Ex19_1.sce @@ -0,0 +1,18 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 19 VLSI Technology and Circuits
+clc
+clear
+ID=50*10^-6//ID=drain current in amperes
+k=25*10^-6//k=ue/D in A/V^2
+VDS=0.25//VDS=drain-to-source voltage
+VGS=5//VGS=gate-to-source voltage
+VTH=1.5//VTH=threshold voltage
+w=ID/(k*(VGS-VTH)*VDS)//w=W/L
+format("v",5)
+disp(w,"W/L=")
+P=VDS*ID//P=power dissipated by the transistor
+disp("micro Watt",P*10^6,"The dissipated power is=")
+VDD=5//VDD=drain supply voltage of given NMOS transistor
+R=(VDD-VDS)/ID//R=load resistor to be connected in series with the drain
+disp("kilo ohm",R/1000,"The load resistance is=")
diff --git a/2300/CH19/EX19.29.2/Ex19_2.sce b/2300/CH19/EX19.29.2/Ex19_2.sce new file mode 100755 index 000000000..2894fae55 --- /dev/null +++ b/2300/CH19/EX19.29.2/Ex19_2.sce @@ -0,0 +1,17 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 19 VLSI Technology and Circuits
+clc
+clear
+ID=50*10^-6//ID=drain current in amperes
+k=25*10^-6//k=ue/D in A/V^2
+VDEP=3
+l=(k*((-VDEP)^2))/(2*ID)//l=(L/W)=aspect ratio of the pull-up
+disp(l,"Pull-up (L/W)=")
+VGS=5//VGS=gate-to-source voltage
+VTH=1//VTH=threshold voltage
+VDs=4.75//VDs=the drain source voltage of the depletion mode pull-up in saturation
+VDD=5//VDD=drain supply voltage of given NMOS inverter
+//L/W=(k*(VGS-VTH)*VDS)/ID where L/W=pull down aspect ratio
+l1=(k*(VGS-VTH)*(VDD-VDs))/ID//l1=L/W
+disp(l1,"Pull-down (L/W)=")
diff --git a/2300/CH19/EX19.29.3/Ex19_3.sce b/2300/CH19/EX19.29.3/Ex19_3.sce new file mode 100755 index 000000000..d1c44ee41 --- /dev/null +++ b/2300/CH19/EX19.29.3/Ex19_3.sce @@ -0,0 +1,14 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 19 VLSI Technology and Circuits
+clc
+clear
+w=10//w=W/L value of the NMOS transistor in a CMOS inverter
+un=1350//un=electron mobility for NMOS transistor in cm^2/V s
+up=540//up=electron mobility for PMOS transistor in cm^2/V s
+//(Wpu/Lpu)*up*(VINV-VDD-VTHP)^2=(Wpd/Lpd)*un*(VINV-VTHN)^2
+//For a symmetrical inverter VINV=(VDD/2) and VTHN=(-VTHP)
+//Also for input voltage=VDD/2 both transistors operate in saturation region
+//Therefore,up*(Wpu/Lpu)=un*(Wpd/Lpd)
+w1=(un*w)/up//w1=Wpu/Lpu=W/L value of the PMOS for a symmetrical inverter
+disp(w1,"W/L value of the PMOS transistor in a CMOS inverter is =")
diff --git a/2300/CH19/EX19.29.4/Ex19_4.sce b/2300/CH19/EX19.29.4/Ex19_4.sce new file mode 100755 index 000000000..6e65a9380 --- /dev/null +++ b/2300/CH19/EX19.29.4/Ex19_4.sce @@ -0,0 +1,13 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 19 VLSI Technology and Circuits
+clc
+clear
+f=2*10^9//f=clock frequency in Hz
+VDD=3//VDD=drain supply voltage
+Cl=1*10^-12//C1=load capacitance in Farad
+P=50*10^-3//P=maximum power dissipation capability in W/stage
+N=P/(f*Cl*VDD^2)//N=maximum permissible number of fan outs
+format("v",5)
+disp(N,"N=")
+disp(floor(N),"The maximum permissible number of fan-outs is(integer just below actual value)=")
diff --git a/2300/CH19/EX19.29.5/Ex19_5.sce b/2300/CH19/EX19.29.5/Ex19_5.sce new file mode 100755 index 000000000..fff6682b4 --- /dev/null +++ b/2300/CH19/EX19.29.5/Ex19_5.sce @@ -0,0 +1,11 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 19 VLSI Technology and Circuits
+clc
+clear
+L=3*10^-6//L=length of an NMOS pass transistor in metres
+VDS=0.5//VDS=drain-source voltage
+u=1400*10^-4//u=electron mobility in m^2/V s
+t=L^2/(VDS*u)//t=channel transit time
+format("v",5)
+disp("nanoseconds",t/10^-9,"The transit time is=")
diff --git a/2300/CH19/EX19.29.6/Ex19_6.sce b/2300/CH19/EX19.29.6/Ex19_6.sce new file mode 100755 index 000000000..ecec44b07 --- /dev/null +++ b/2300/CH19/EX19.29.6/Ex19_6.sce @@ -0,0 +1,21 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 19 VLSI Technology and Circuits
+clc
+clear
+y=2//y=length unit in micrometres
+W=3*y//W=mimimum metal linewidth in micrometres
+disp("micrometres",W,"W=")
+n=80//n=number of driven inverters
+i=0.07//i=average current ratings in milliamperes
+I=n*i//I=total currrent drawn by n inverters
+disp("mA",I,"I=")
+//1mA per micrometre of aluminium line width is the maximum safe average current an aluminium wire can carry.
+disp("This needs a line at least width of")
+disp("micrometres",I)
+if (W>I) then
+ disp("Above calculated minimum metal line-width (W) is thus the safe width of the metal line driving 80 inverters.")
+end
+f=5//f=number of fanout lines
+w=f*W//w=required metal line width
+disp("micrometres",w,"The metal line-width required to supply a fan-out of 5 lines is=")
diff --git a/2300/CH2/EX2.7.1/Ex2_1.sce b/2300/CH2/EX2.7.1/Ex2_1.sce new file mode 100755 index 000000000..a0b64f2af --- /dev/null +++ b/2300/CH2/EX2.7.1/Ex2_1.sce @@ -0,0 +1,18 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 2:Electron Emission from Solids
+clc
+clear
+//given
+A=6.02*(10^5)//A=thermionic emission constant in A(m^(-2))(K^(-2))
+Ew=4.54//Ew=work function in eV
+T=2500//T=temperature in Kelvin
+kB=1.38*10^(-23)//kB=Boltzmann's constant in J/K
+e=1.6*10^(-19)//e=charge of anelectron in C
+b=(e*Ew)/kB//b=thermionic emission constant in K
+disp("K",b,"b=")
+Jx=A*(T^2)*exp(-b/T)//Jx=emission current density in A/m^(2)
+disp("A/(m^2)",Jx,"Jx=")
+n=Jx/e//n=number of electrons emitted per unit area per second in (m^-2)(s^-1)
+disp("(m^-2)(s^-1)",n,"n=")
diff --git a/2300/CH2/EX2.7.2/Ex2_2.sce b/2300/CH2/EX2.7.2/Ex2_2.sce new file mode 100755 index 000000000..6893f0cb8 --- /dev/null +++ b/2300/CH2/EX2.7.2/Ex2_2.sce @@ -0,0 +1,17 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 2:Electron Emission from Solids
+clc
+clear
+//given
+T=2673//T=temperature in Kelvin
+dT=10//dT=change in temperature in Kelvin
+Ew=4.54//Ew=work function in eV
+e=1.6*10^(-19)//e=charge of anelectron in C
+kB=1.38*10^(-23)//kB=Boltzmann's constant in J/K
+//I=(S*A*(T^2))*exp(-((e*Ew)/(kB*T))//I=emission current,S=surface area of the filament,dI=change in emission current
+d=((2*dT)/T)+(((e*Ew)/(kB*(T^2))*dT))//d=change in emission current
+disp("",d,"d=")
+d*100//percent change in emission current
+disp("%",d*100,"d*100=")
diff --git a/2300/CH2/EX2.7.3/Ex2_3.sce b/2300/CH2/EX2.7.3/Ex2_3.sce new file mode 100755 index 000000000..79616f08f --- /dev/null +++ b/2300/CH2/EX2.7.3/Ex2_3.sce @@ -0,0 +1,21 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 2:Electron Emission from Solids
+clc
+clear
+//given
+kB=1.38*10^(-23)//kB=Boltzmann's constant in J/K
+//A=6.02*(10^5)//A=thermionic emission constant in A(m^(-2))(K^(-2))
+//Ew1,Ew2=thermionic work function of 2 emitters in eV
+e=1.6*10^(-19)//e=charge of anelectron in C
+T=2000//T=temperature in Kelvin
+//Jx1=A*(T^2)*exp(-(a/(kB*T)))//Jx=emission current density in A/m^(2)
+//Jx2=A*(T^2)*exp(-(b/(kB*T)))
+//(Jx1/Jx2)=2
+//(Jx1/Jx2)=exp((Ew2-Ew1)/(kB*T))
+//exp((Ew2-Ew1)/(kB*T))=2
+d=(kB*T*log(2))//d=(Ew2-Ew1)=difference in thermionic work functions of 2 emitters
+disp("J",d,"d=")
+d/e
+disp("eV",d/e,"d/e=")
diff --git a/2300/CH2/EX2.7.4/Ex2_4.sce b/2300/CH2/EX2.7.4/Ex2_4.sce new file mode 100755 index 000000000..ca0e72e71 --- /dev/null +++ b/2300/CH2/EX2.7.4/Ex2_4.sce @@ -0,0 +1,13 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 2:Electron Emission from Solids
+clc
+clear
+//given
+//Ia=(K*(Va^(3/2)));Ia=space charge limited current ,Va=anode voltage,K=proportionality constant
+Ia1=300//Ia1=space charge limited current of 1st anode in A
+Ia2=200//Ia2=space charge limited current of 2nd anode in A
+Va1=200//Va=anode voltage of 1st anode in V
+Va2=(Va1*((Ia2/Ia1)^(2/3)))//Va2=anode voltage of 2nd anode in V
+disp("V",Va2,"Va2=")
diff --git a/2300/CH20/EX20.9.1/Ex20_1.sce b/2300/CH20/EX20.9.1/Ex20_1.sce new file mode 100755 index 000000000..bde3b1c6a --- /dev/null +++ b/2300/CH20/EX20.9.1/Ex20_1.sce @@ -0,0 +1,25 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 20 Cathode Ray Oscilloscope
+clc
+clear
+e=1.6*10^-19//e=charge of an electron
+Va=1000//Va=potential difference in volts
+m=9.11*10^-31//m=mass of an electron
+v=sqrt((2*e*Va)/m)//v=axial velocity of an electron
+l=2*10^-2//l=axial length of deflecting plates in metre
+t=l/v//t=transit time of the beam through the deflecting plates
+format("v",9)
+disp("s",t,"The transit time is =")
+Vd=20//Vd=potential difference applied between the deflecting plates in volts
+s=5*10^-3//s=separation between the plates in metre
+ta=(e*Vd)/(s*m)//ta=the traverse acceleration imparted to the electrons by the deflecting voltage
+format("v",10)
+disp("m/s^2",ta,"Traverse acceleration is =")
+L=25*10^-2//L=distance of the CRT screen from the centre of the deflecting plates in metre
+d=(l*L*Vd)/(2*s*Va)//d=deflection of the spot on the CRT screen
+format("v",13)
+disp("cm",d*100,"Spot deflection is =")//d is converted in terms of cm
+S=d/Vd//S=deflection sensitivity
+format("v",10)
+disp("mm/V",S/10^-3,"Deflection sensitivity is =")//S is converted in terms of mm/V
diff --git a/2300/CH20/EX20.9.2/Ex20_2.sce b/2300/CH20/EX20.9.2/Ex20_2.sce new file mode 100755 index 000000000..c550d5269 --- /dev/null +++ b/2300/CH20/EX20.9.2/Ex20_2.sce @@ -0,0 +1,18 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 20 Cathode Ray Oscilloscope
+clc
+clear
+e=1.6*10^-19//e=charge of an electron
+Va=1000//Va=potential difference in volts
+m=9.11*10^-31//m=mass of an electron
+v=sqrt((2*e*Va)/m)//v=axial velocity of an electron
+l=1.5*10^-2//l=axial length of deflecting plates in metre
+t=l/v//t=transit time of the beam through the deflecting plates
+//T=time period of the sinusoidal deflecting voltage
+//tmax=maximum transit time
+//(0.1/360)*T=tmax,since 1 cycle corresponds to 360 degrees
+T=(t*360)/0.1
+f=1/T//f=highest frequency of the deflecting voltage
+format("v",5)
+disp("kHz",f/1000,"The highest frequency of the deflecting voltage is =")
diff --git a/2300/CH20/EX20.9.3/Ex20_3.sce b/2300/CH20/EX20.9.3/Ex20_3.sce new file mode 100755 index 000000000..e6df7b1fe --- /dev/null +++ b/2300/CH20/EX20.9.3/Ex20_3.sce @@ -0,0 +1,18 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 20 Cathode Ray Oscilloscope
+clc
+clear
+V=1000//V=potential difference in volts
+//B=150 gauss (given)
+B=1.5*10^-2//B=magnetic field in tesla
+l=1*10^-2//l=axial length of deflecting plates in metre
+L1=20*10^-2//L1=(L+(l/2))=distance of the fluorescent screen from the centre of the deflection system in metre
+e=1.6*10^-19//e=charge of an electron
+m=9.11*10^-31//m=mass of an electron
+d=B*sqrt(e/(2*V*m))*l*L1//d=deflection of the spot
+format("v",5)
+disp("cm",d*100,"The deflection of the spot is=")
+Sm=d/B//Sm=magnetic deflection sensitivity
+format("v",5)
+disp("mm/gauss",Sm/10,"The magnetic deflection sensitivity is=")
diff --git a/2300/CH20/EX20.9.4/Ex20_4.sce b/2300/CH20/EX20.9.4/Ex20_4.sce new file mode 100755 index 000000000..fed49ea5b --- /dev/null +++ b/2300/CH20/EX20.9.4/Ex20_4.sce @@ -0,0 +1,13 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 20 Cathode Ray Oscilloscope
+clc
+clear
+sw=10//sw=sweep width in cm
+n=5/2//n=number of cycles given by vertical deflection plates
+c=sw/n//c=centimetres occupied by one cycle of signal
+ct=0.1//ct=calibrated time base of CRO in ms/cm
+t=ct*c//t=time interval corresponding to centimetres occupied by one cycle of signal
+T=t/5//T=time period of the signal,since the scale is 5 times magnified
+f=1/T//f=frequency of the signal
+disp("kHz",f,"The frequency of the signal is =")
diff --git a/2300/CH20/EX20.9.5/Ex20_5.sce b/2300/CH20/EX20.9.5/Ex20_5.sce new file mode 100755 index 000000000..3e35eb93d --- /dev/null +++ b/2300/CH20/EX20.9.5/Ex20_5.sce @@ -0,0 +1,16 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 20 Cathode Ray Oscilloscope
+clc
+clear
+//Let fv=frequency of the vertical signals in kHz
+//fh=frequency of the horizontal signals
+//Number of horizontal tangencies=nh
+//Number of vertical tangencies=nv
+//fv/fh=nh/nv
+fh=1
+nh=3
+nv=4
+fv=(nh/nv)*fh
+disp("Hz",fv*1000,"The frequency of the vertical signal is =")
+
diff --git a/2300/CH20/EX20.9.6/Ex20_6.sce b/2300/CH20/EX20.9.6/Ex20_6.sce new file mode 100755 index 000000000..e8122cc78 --- /dev/null +++ b/2300/CH20/EX20.9.6/Ex20_6.sce @@ -0,0 +1,12 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 20 Cathode Ray Oscilloscope
+clc
+clear
+//slope of the major axis is negative (given)
+A=2.6//A=The maximum y-displacement
+vyo=1.1//vyo=the vertical displacement
+sino=(vyo/A)//o=phase difference between the two voltages
+x=asind(sino)
+disp("As the major axis of the ellipse has a negative slope,phase difference between the two voltages must lie between 90 degree and 180 degree")
+disp("degree",180-x,"Therefore,phase difference between the voltages is =")
diff --git a/2300/CH21/EX21.13.1/Ex21_1.sce b/2300/CH21/EX21.13.1/Ex21_1.sce new file mode 100755 index 000000000..77e98afac --- /dev/null +++ b/2300/CH21/EX21.13.1/Ex21_1.sce @@ -0,0 +1,25 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 21 Communication Systems
+clc
+clear
+Npe=6*10^10//Npe=peak electron concentration for the E layer in m^-3
+Npf=10^12//Npf=peak electron concentration for the F layer in m^-3
+fCE=9*sqrt(Npe)//fCE=critical frequency for the E layer
+format("v",5)
+disp("MHz",fCE/10^6,"Critical frequency for the E layer is =")
+fCF=9*sqrt(Npf)//fCF=critical frequency for the F layer
+format("v",5)
+disp("MHz",fCF/10^6,"Critical frequency for the F layer is =")
+R=6400//R=radius of the earth in km
+He=110//He=height of the E layer above the earth surface in km
+ime=asind(R/(R+He))//ime=angle corresponding to maximum frequency fmE for E layer in degrees
+format("v",3)
+fmE=fCE*secd(ime)//fmE=maximum frequency reflected from the E layer
+disp("MHz",fmE/10^6,"The maximum frequency reflected from the E layer is =")
+Hf=250//Hf=height of the F layer above the earth surface in km
+imf=asind(R/(R+Hf))//imf=angle corresponding to maximum frequency fmF for F layer in degrees
+format("v",3)
+fmF=fCF*secd(imf)//fmF=maximum frequency reflected from the F layer
+disp("MHz",fmF/10^6,"The maximum frequency reflected from the F layer is =")
+
diff --git a/2300/CH21/EX21.13.2/Ex21_2.sce b/2300/CH21/EX21.13.2/Ex21_2.sce new file mode 100755 index 000000000..ce9e2c465 --- /dev/null +++ b/2300/CH21/EX21.13.2/Ex21_2.sce @@ -0,0 +1,15 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 21 Communication Systems
+clc
+clear
+R=6400//R=radius of the earth in km
+He=110//He=height of the E layer above the earth surface in km
+ime=asin(R/(R+He))//ime=angle corresponding to maximum frequency fmE for E layer in radian
+format("v",10)
+o=(%pi/2)-ime//o=angle made by the incident ray at the centre of the earth in degrees
+format("v",5)
+L=2*o*R//L=maximum distance between the transmitting and the receiving points on the earth surface for single hop transmission of the radiowave reflected from the E layer
+format("v",5)
+disp("km",L,"The maximum distance for single hop transmission is =")
+//Answer given in textbook is 2459 km which is incorrect as it is actually around 2356 km.
diff --git a/2300/CH21/EX21.13.3/Ex21_3.sce b/2300/CH21/EX21.13.3/Ex21_3.sce new file mode 100755 index 000000000..86ad505d7 --- /dev/null +++ b/2300/CH21/EX21.13.3/Ex21_3.sce @@ -0,0 +1,13 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 21 Communication Systems
+clc
+clear
+//fc=9*sqrt(Np)
+fc=3*10^6//fc=critical frequency in Hz
+Np=(fc^2)/81//Np=electron concentration at the reflecting point
+//h=height of the reflecting point from the bottom of the layer
+//Np=(5*10^10)+(10^9*h)....(given)
+h=(Np-(5*10^10))/10^9
+H=100//H=height above the surface of the earth in km
+disp("km",h+H,"The required height above the ground is =")
diff --git a/2300/CH23/EX23.31.1/Ex23_1.sce b/2300/CH23/EX23.31.1/Ex23_1.sce new file mode 100755 index 000000000..6cdd8afb4 --- /dev/null +++ b/2300/CH23/EX23.31.1/Ex23_1.sce @@ -0,0 +1,16 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 23 Lasers,Fibre Optics,and Holography
+clc
+clear
+y=630*10^(-9)//y=emitted wavelength in meters
+c=3*10^8//c=velocity of light in free space in m/s
+v=c/y//v=frequency of the emitted radiation
+format("v",9)
+disp("The frequency of the emitted radiation is")
+disp("Hz",v,"v=")
+h=6.62*10^(-34)//h=Planck's constant
+P=1*10^(-3)//P=output power of gas laser(given)
+n=P/(h*v)
+format("v",9)
+disp("s^-1",n,"The number of photons emitted per second is=")
diff --git a/2300/CH23/EX23.31.10/Ex23_10.sce b/2300/CH23/EX23.31.10/Ex23_10.sce new file mode 100755 index 000000000..fb75e540a --- /dev/null +++ b/2300/CH23/EX23.31.10/Ex23_10.sce @@ -0,0 +1,18 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 23 Lasers,Fibre Optics,and Holography
+clc
+clear
+u1=1.55//u1=refractive index of the core of the fibre
+u2=1.50//u2=refractive index of the cladding
+oa=asind(sqrt((u1^2)-(u2^2)))//oa=acceptance angle
+format("v",5)
+disp("degree",oa,"The acceptance angle is =")
+NA=sind(oa)//NA=numerical aperture
+disp(,NA,"NA=")
+oc=asind(u2/u1)//oc=critical angle
+disp("degree",oc,"Critical angle=")
+d=50*10^-6//d=core diameter in meters
+x=d*tand(oc)//x=axial distance traversed by the ray between two consecutive reflections
+n=1/x//n=number of reflections per metre
+disp(,n,"The number of reflections per metre is =")
diff --git a/2300/CH23/EX23.31.2/Ex23_2.sce b/2300/CH23/EX23.31.2/Ex23_2.sce new file mode 100755 index 000000000..362a21ae7 --- /dev/null +++ b/2300/CH23/EX23.31.2/Ex23_2.sce @@ -0,0 +1,11 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 23 Lasers,Fibre Optics,and Holography
+clc
+clear
+V=500//V=bandwidth of a He-Ne laser in Hz
+t=1/V//t=coherence time
+disp("ms",(t*(10^3)),"The coherence time is =")
+c=3*10^8//c=velocity of light in m/s
+Lc=c/V//Lc=longitudinal coherence length
+disp("km",(Lc/1000),"The longitudinal coherence length is=")
diff --git a/2300/CH23/EX23.31.3/Ex23_3.sce b/2300/CH23/EX23.31.3/Ex23_3.sce new file mode 100755 index 000000000..601dc940a --- /dev/null +++ b/2300/CH23/EX23.31.3/Ex23_3.sce @@ -0,0 +1,13 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 23 Lasers,Fibre Optics,and Holography
+clc
+clear
+//To obtain interference fringes of good visibility the path difference for the central fringe must be an integral multiple of each of the 2 wavelengths.
+//2*d=(n1*y1)=(n2*y2)where y1 & y2 are 2 wave-lengths and d=path difference and n1 and n2 are 2 integers
+//(2*d)*((1/y2)-(1/y1))=(n2-n1)=m where m is another integer
+//Now m=(-2*d*Y)/(y^2)=(2*d*V)/(v*y)=(2*d*V)/c=(2*d)/Lc
+Lc=600//Lc=coherence length in km
+d=(Lc/2)//d=minimum difference between the 2 arms of the Michelson interferometer
+disp("km",d,"The minimum difference between the two arms of the Michelson interferometer is=")
+
diff --git a/2300/CH23/EX23.31.4/Ex23_4.sce b/2300/CH23/EX23.31.4/Ex23_4.sce new file mode 100755 index 000000000..1a1a6700d --- /dev/null +++ b/2300/CH23/EX23.31.4/Ex23_4.sce @@ -0,0 +1,16 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 23 Lasers,Fibre Optics,and Holography
+clc
+clear
+h=6.62*10^(-34)//h=Planck's constant
+v=3*10^8//v=velocity of light(as normal optical source is mentioned) in m/s
+kB=1.38*10^-23//kB=Boltzmann's constant
+T=1000//T=temperature in Kelvin
+w=6000//w=wavelength in Armstrong
+R=(exp((h*v)/(w*(10^-10)*kB*T)))-1//R=the ratio of the number of spontaneous to stimulated transitions
+disp(,R,"R=")
+if (R>1) then
+
+ disp("As the ratio of the number of spontaneous to stimulated transitions (R) is >> 1 the emission is predominantly due to spontaneous transitions and is thus incoherent")
+end
diff --git a/2300/CH23/EX23.31.5/Ex23_5.sce b/2300/CH23/EX23.31.5/Ex23_5.sce new file mode 100755 index 000000000..c41d704fe --- /dev/null +++ b/2300/CH23/EX23.31.5/Ex23_5.sce @@ -0,0 +1,16 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 23 Lasers,Fibre Optics,and Holography
+clc
+clear
+u=8/(10^14)//u=(V/v)=the short term frequency stability of a He-Ne gas laser
+//v=c/y where c=velocity of light in vacuum and y=wavelength
+c=3*10^8//c=velocity of light in m/s
+y=1153*10^(-9)//y=emitted wavelength in meters
+V=(u*c)/y
+t=1/V//t=coherence time
+disp("ms",(t*(10^3)),"The coherence time is =")
+format("v",9)
+Lc=c/V//Lc=coherence length
+disp("m",Lc,"The coherence length is=")
+format("v",3)
diff --git a/2300/CH23/EX23.31.6/Ex23_6.sce b/2300/CH23/EX23.31.6/Ex23_6.sce new file mode 100755 index 000000000..fd0738431 --- /dev/null +++ b/2300/CH23/EX23.31.6/Ex23_6.sce @@ -0,0 +1,20 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 23 Lasers,Fibre Optics,and Holography
+clc
+clear
+//y0=vacuum wavelength for the frequency v
+//c=(v*y0)
+//The deviation in the wavelength is Y0=(c*V)/(v^2)
+//Y0=((y0^2)*V)/c
+//V being spread in frequency over the linewidth.
+//V=(1/tc)
+c=3*(10^8)//c=velocity of light in m/s
+tc=10^(-8)//tc=coherence time in seconds
+y0=650*(10^(-9))//y0=vacuum wavelength in m
+Y0=(y0^2)/(c*tc)
+format("e",9)
+disp("nm",Y0/(10^-9),"Line width is =")//Y0 is converted in terms of nm
+Lc=c*tc//Lc=coherence length
+format("v",5)
+disp("m",Lc,"The coherence length Lc is=")
diff --git a/2300/CH23/EX23.31.7/Ex23_7.sce b/2300/CH23/EX23.31.7/Ex23_7.sce new file mode 100755 index 000000000..6a155bc1f --- /dev/null +++ b/2300/CH23/EX23.31.7/Ex23_7.sce @@ -0,0 +1,19 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 23 Lasers,Fibre Optics,and Holography
+clc
+clear
+o=5*10^-5//o=angular spread in radians
+f=10//f=focal length in cm
+D=f*o//D=diameter of the image
+r=(D/2)//r=image radius
+format("v",15)
+disp("cm",r,"The image radius is =")
+a=%pi*(r^2)//a=cross sectional area of the image in cm^2
+P=10*10^-3//P=power in Watts
+PD=P/a//PD=power density
+format("v",10)
+disp("W/cm^2",PD,"Power density is =")
+y=6000*10^-8//y=wavelength in cm
+d=y/o//d=coherent width
+disp("cm",d,"The lateral coherent width is =")
diff --git a/2300/CH23/EX23.31.8/Ex23_8.sce b/2300/CH23/EX23.31.8/Ex23_8.sce new file mode 100755 index 000000000..73490afe8 --- /dev/null +++ b/2300/CH23/EX23.31.8/Ex23_8.sce @@ -0,0 +1,13 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 23 Lasers,Fibre Optics,and Holography
+clc
+clear
+h=6.62*10^-34//h=Planck's constant
+c=3*10^8//c=velocity of light in vacuum in m/s
+y=632.8*10^-9//y=emitted wavelength in m
+E=(h*c)/y//E=emitted photon energy in Joules
+e=15.2*10^-19//e=energy of 2p level in Joules
+P=E+e//P=Pumping energy required for transition from 3s to 2p level in a He-Ne laser
+disp("eV",P/(1.6*10^-19),"The desired pumping energy is =")
+format("v",10)
diff --git a/2300/CH23/EX23.31.9/Ex23_9.sce b/2300/CH23/EX23.31.9/Ex23_9.sce new file mode 100755 index 000000000..ddd1613a9 --- /dev/null +++ b/2300/CH23/EX23.31.9/Ex23_9.sce @@ -0,0 +1,11 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 23 Lasers,Fibre Optics,and Holography
+clc
+clear
+h=6.62*10^-34//h=Planck's constant
+v=2.4*10^15//v=frequency of emitted radiation in Hz
+c=3*10^8//c=velocity of light in vacuum in m/s
+A21=1/(1.66*10^-8)//A21=mean spontaneous life time
+B21=((c^3)*A21)/(8*%pi*h*(v^3))//B21=probability of stimulated emission
+disp("m^3/(J.s^2)",B21,"The desired probability is =")
diff --git a/2300/CH3/EX3.11.1/Ex3_1.sce b/2300/CH3/EX3.11.1/Ex3_1.sce new file mode 100755 index 000000000..05cd35166 --- /dev/null +++ b/2300/CH3/EX3.11.1/Ex3_1.sce @@ -0,0 +1,23 @@ + +//scilab 5.4.1
+//WINDOWS 7 Operating System
+//chapter 3 PROPERTIES OF SEMICONDUCTORS
+//example 1
+
+clc
+//Given data
+T=300; //K
+ni=1.5*10^16; //Intrinsic carrier concentartion per m^3
+yn=0.13; //Electron mobility in m^2/(V*s)
+yp=0.05; //Hole mobility in m^2/(V*s)
+e=1.6*10^-19; //Charge of electron in C
+
+//Required Formula
+Gi=e*ni*(yn+yp); //Intrinsic conductivity
+
+Ri=1/Gi; //Intrinsic resistivity
+
+disp('S/m',Gi,'Intrinsic conductivity=');
+
+disp('ohm*meter',Ri,'Intrinsic resistivity=');
+//End
diff --git a/2300/CH3/EX3.11.2/Ex3_2.sce b/2300/CH3/EX3.11.2/Ex3_2.sce new file mode 100755 index 000000000..acdcd1024 --- /dev/null +++ b/2300/CH3/EX3.11.2/Ex3_2.sce @@ -0,0 +1,16 @@ + +//scilab 5.4.1
+//WINDOWS 7 Operating Systems
+//chapter 3 PROPERTIES OF SEMICONDUCTORS
+
+//example 2
+clc
+//Given data
+Sn=480; //Conductivity in S/m
+yn=0.38; //Electron mobility in m^2/(V*s)
+e=1.6*10^-19; //Charge of electron in C
+
+//Required Formula
+Nd=Sn/(e*yn); //Concentration of donor atoms per m^3
+ disp('m^-3',Nd,'Concentration of donor atoms');
+ //End
diff --git a/2300/CH3/EX3.11.4/Ex3_4.sce b/2300/CH3/EX3.11.4/Ex3_4.sce new file mode 100755 index 000000000..d0cb29369 --- /dev/null +++ b/2300/CH3/EX3.11.4/Ex3_4.sce @@ -0,0 +1,25 @@ + +//scilab 5.4.1
+//OS-WINDOWS 7
+//chapter 3 PROPERTIES OF SEMICONDUCTORS
+//example 4
+
+clc
+//Given data
+T=300; //K
+ni=1.5*10^16; //Intrinsic carrier concentartion per m^3
+yn=0.13; //Electron mobility in m^2/(V*s)
+yp=0.05; //Hole mobility in m^2/(V*s)
+e=1.6*10^-19; //Charge of electron in C
+l=0.01; //length in m
+a=10^-6; //cross sectional area in m^2
+
+//Required Formula
+Gi=e*ni*(yn+yp); //Intrinsic conductivity
+
+Ri=l/(Gi*a); //Required resistance
+
+disp('S/m',Gi,'Intrinsic conductivity=');
+
+disp('ohm',Ri,'required resistance');
+//End
diff --git a/2300/CH3/EX3.11.5/Ex3_5.sce b/2300/CH3/EX3.11.5/Ex3_5.sce new file mode 100755 index 000000000..380a13f33 --- /dev/null +++ b/2300/CH3/EX3.11.5/Ex3_5.sce @@ -0,0 +1,32 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 3:Properties of Semiconductors
+clc
+clear
+//given
+z=(100/60);//z=conductiarrier concentration in /(m^3)
+ni=2.5*10^(19);//ni=intrinsic conductivity of intrinsic material in S/m
+//(P/N)=(1/2);//(P/N)=ratio of hole mobility(P) to electron mobility(N)
+e=1.6*(10^-19);//e=charge of electron in Coulomb
+N=(z/(e*ni*(1+(1/2))))
+disp("(m^2)/(V.s)",N,"N=")
+P=(N/2)
+disp("(m^2)/(V.s)",P,"P=")
+//Nd+p=Na+n;n=electron concentration;p=hole concentration
+//np=(ni^2)
+Nd=(10^20)//Nd=donor concentration in /(m^3)
+Na=5*(10^19)//Na=acceptor concentration in /(m^3)
+n=(1/2)*((Nd-Na)+sqrt(((Nd-Na)^2)+(4*(ni^2))))
+disp("/(m^3)",n,"n=")
+p=(ni^2)/n
+disp("/(m^3)",p,"p=")
+Z=e*((n*N)+(p*P))//Z=conductivity of doped sample in S/m
+disp("S/m",Z,"Z=")
+F=200//F=applied electric field in V/cm
+J=Z*F//J=total conduction current density in A/(m^2)
+disp("A/(m^2)",J,"J=")
+
+
+
+
diff --git a/2300/CH3/EX3.11.6/Ex3_6.sce b/2300/CH3/EX3.11.6/Ex3_6.sce new file mode 100755 index 000000000..baab72d4b --- /dev/null +++ b/2300/CH3/EX3.11.6/Ex3_6.sce @@ -0,0 +1,18 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 3:Properties of Semiconductors
+clc
+clear
+//given
+ni=2.5*10^(19);//ni=intrinsic conductivity of intrinsic material in S/m
+Nd=5*(10^19)//Nd=donor concentration in /(m^3)
+n=(1/2)*(Nd+sqrt((Nd^2)+(4*(ni^2))))//n=electron concentration
+disp("/(m^3)",n,"n=")
+p=(ni^2)/n//p=hole concentration
+disp("/(m^3)",p,"p=")
+N=0.38//N=electron mobility in (m^2)/(V.s)
+P=0.18//P=hole mobility in (m^2)/(V.s)
+e=1.6*(10^-19)//e=electronic charge in Coulomb
+Z=e*((n*N)+(p*P))//Z=conductivity of doped sample in S/m
+disp("S/m",Z,"Z=")
diff --git a/2300/CH3/EX3.11.7/Ex3_7.sce b/2300/CH3/EX3.11.7/Ex3_7.sce new file mode 100755 index 000000000..aa477e259 --- /dev/null +++ b/2300/CH3/EX3.11.7/Ex3_7.sce @@ -0,0 +1,13 @@ + +//scilab 5.4.1
+//windows 8 operating system
+//chapter 3:Properties of Semiconductors
+clc
+clear
+//given
+c=3*(10^8);//c=velocity of light in vacuum in m/s
+h=6.6*(10^-34);//h=Planck's constant in J.s
+Eg=1.98*1.6*(10^-19)//Eg=band gap in J
+//calculating Y=required wavelength
+Y=((c*h)/Eg)/(10^-9)
+disp("nm",Y,"Y=")
diff --git a/2300/CH3/EX3.11.8/Ex3_8.sce b/2300/CH3/EX3.11.8/Ex3_8.sce new file mode 100755 index 000000000..68d0423e2 --- /dev/null +++ b/2300/CH3/EX3.11.8/Ex3_8.sce @@ -0,0 +1,18 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 3:Properties of Semiconductors
+clc
+clear
+//given
+RH=(10^-2);//RH=Hall coefficient in (m^3)/C
+VH=(10^-3);//VH=Hall Voltage in V
+b=2*(10^-3);//b=width in m
+I=(10^-3);//I=current in A
+//RH=(VH*b)/(I*B)
+B=(VH*b)/(I*RH)//B=magnetic field
+disp("T",B,"B=")
+t=(10^-3)//t=thickness in m
+FH=(VH/t)//FH=Hall field
+disp("V/m",FH,"FH=")
+
diff --git a/2300/CH4/EX4.7.1/Ex4_1.sce b/2300/CH4/EX4.7.1/Ex4_1.sce new file mode 100755 index 000000000..70e0e0261 --- /dev/null +++ b/2300/CH4/EX4.7.1/Ex4_1.sce @@ -0,0 +1,21 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 4:Metal-Semiconductor Contacts
+clc
+clear
+//given
+Qm=4.55//Qm=work function of tungsten in eV
+X=4.01//X=electron affinity of silicon in eV
+eQb=(Qm-X)//eQb=barrier height as seen from the metal
+disp("eV",eQb,"eQb=")
+a=0.21//a=(Ec-Ef)=forbidden gap in eV
+eVbi=eQb-a//eVbi=barrier height from semiconductor side
+disp("eV",eVbi,"eVbi=")
+Es=11.7*8.854*(10^-12)//Es=permittivity of semiconductor;11.7=dielectric constant of silicon
+e=1.6*10^(-19)//e=charge of an electron
+Nd=10^22//Nd=donor concentration in m^-3
+W=((2*Es*eVbi)/(e*Nd))^(1/2)//W=width of the depletion region
+disp("m",W,"W=")
+Fm=((e*Nd*W)/Es)//Fm=maximum electric field in V/m
+disp("V/m",Fm,"Fm=")
diff --git a/2300/CH4/EX4.7.2/Ex4_2.sce b/2300/CH4/EX4.7.2/Ex4_2.sce new file mode 100755 index 000000000..8955a0f7d --- /dev/null +++ b/2300/CH4/EX4.7.2/Ex4_2.sce @@ -0,0 +1,14 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 4:Metal-Semiconductor Contacts
+clc
+clear
+//given
+// as per given data barrier height =Vbi=intercept on Vr axis=0.4 V
+Es=11.7*8.854*(10^-12)//Es=permittivity of semiconductor;11.7=dielectric constant of silicon
+e=1.6*10^(-19)//e=charge of an electron
+m=4.4*10^(15)//m=slope of (1/C^2) vs Vr plot of a Schottky contact in(cm^4)(F^-2)(V^-1)
+//m=2/(e*Es*Nd)
+Nd=(2*10^8)/(e*Es*m)//Nd=donor concentration in silicon in m^-3
+disp("m^-3",Nd,"Nd=")
diff --git a/2300/CH4/EX4.7.3/Ex4_3.sce b/2300/CH4/EX4.7.3/Ex4_3.sce new file mode 100755 index 000000000..d19387ffb --- /dev/null +++ b/2300/CH4/EX4.7.3/Ex4_3.sce @@ -0,0 +1,14 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 4:Metal-Semiconductor Contacts
+clc
+clear
+//given
+e=1.6*10^-19//e=charge of an electron in C
+Fa=7*10^6//Fa=reverse bias field in V/m
+Es=13.1*8.854*10^-12//(Es/Eo)=13.1;Eo=8.854*10^-12
+dQ=((e*Fa)/(4*%pi*Es))^(1/2)//dQ=barrier lowering in V
+disp("V",dQ,"dQ=")
+Xm=(dQ)/(2*Fa)//Xm=position of the maximum barrier height
+disp("m",Xm,"Xm=")
diff --git a/2300/CH4/EX4.7.4/Ex4_4.sce b/2300/CH4/EX4.7.4/Ex4_4.sce new file mode 100755 index 000000000..bd489aef8 --- /dev/null +++ b/2300/CH4/EX4.7.4/Ex4_4.sce @@ -0,0 +1,15 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 4:Metal-Semiconductor Contacts
+clc
+clear
+//given
+//Js=A*(T^2)*exp(-((e*Qbn)/(kB*T)))
+kB=1.38*10^(-23)//kB=Boltzmann's constant in J/K
+T=300//T=temperature in Kelvin
+e=1.6*10^-19//e=charge of an electron in C
+Js=6*10^-5//Js=emission current density in A/cm^2
+Qbn=0.668//Qbn=barrier height in V
+A=(Js/(T^2))*exp((e*Qbn)/(kB*T))//A=Richardson constant
+disp("(cm^-2)(K^-2)",A,"A=")
diff --git a/2300/CH4/EX4.7.5/Ex4_5.sce b/2300/CH4/EX4.7.5/Ex4_5.sce new file mode 100755 index 000000000..a004b932f --- /dev/null +++ b/2300/CH4/EX4.7.5/Ex4_5.sce @@ -0,0 +1,17 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 4:Metal-Semiconductor Contacts
+clc
+clear
+//given
+e=1.6*10^-19//e=charge of an electron in C
+V=0.32//V =applied forward bias in V
+kB=1.38*10^(-23)//kB=Boltzmann's constant in J/K
+T=300//T=Temperature in Kelvin
+Js=0.61//Js=reverse saturation current density in A/m^2
+J=Js*(exp((e*V)/(kB*T))-1)//J=current density in A/m^2
+disp("A/m^2",J,"J=")
+A=4*10^-8//A=cross sectional area in m^2
+I=(J*A)*10^3//I=current
+disp("mA",I,"I=")
diff --git a/2300/CH5/EX5.7.1/Ex5_1.sce b/2300/CH5/EX5.7.1/Ex5_1.sce new file mode 100755 index 000000000..8e6f2f732 --- /dev/null +++ b/2300/CH5/EX5.7.1/Ex5_1.sce @@ -0,0 +1,17 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//Chapter 5:Semiconductor Junction Diodes
+clc
+clear
+//I=Is*(exp((e*V)/kB*T)-1)
+I=50*10^(-3)//I=Forward current in ampere
+Is=5*10^(-6)//Is=Reverse saturation current in ampere
+e=1.6*10^(-19)//e=charge of electron in coulomb
+//V=voltage
+kB=1.38*10^(-23)//kB=Boltzmann's constant in Joule/kelvin
+T=300//T=Temperature in kelvin
+a=(I/Is)+1
+//exp((e*V)/kB*T)=a
+V=((kB*T)/e)*log(10^4)
+disp("V",V,"V=")
diff --git a/2300/CH5/EX5.7.10/Ex5_10.sce b/2300/CH5/EX5.7.10/Ex5_10.sce new file mode 100755 index 000000000..8fd2ff372 --- /dev/null +++ b/2300/CH5/EX5.7.10/Ex5_10.sce @@ -0,0 +1,21 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 5:Semiconductor Junction Diodes
+clc
+clear
+Vz=3//Vz=breakdown voltage of zener diode
+Vi=12//Vi=input voltage
+V=[12;-3]//V=[Vi:-Vz]
+R1=1000
+R2=1000
+R3=500//R1,R2,R3=resistances
+R=[R1+R2 -R2;-R2 R2+R3]
+I1=inv(R)*V//solving this matrix on the basis of application of KCL & KVL,we get the values of branch currents I & Iz as I1=[I;Iz]
+disp("A",I1(1),"I=")
+disp("A",I1(2),"Iz=")
+Pz=Vz*I1(2)//Pz=power dissipated in zener diode
+disp("W",Pz,"Pz=")
+disp("Power dissipated does not exceed the maximum power limit of 20mW")
+
+
diff --git a/2300/CH5/EX5.7.11/Ex5_11.sce b/2300/CH5/EX5.7.11/Ex5_11.sce new file mode 100755 index 000000000..674828570 --- /dev/null +++ b/2300/CH5/EX5.7.11/Ex5_11.sce @@ -0,0 +1,22 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 5:Semiconductor Junction Diodes
+clc
+clear
+Vs1=15
+Vs2=30//Vs=supply voltage varying from 15(Vs1) to 30(Vs2) Volt
+Vzo=9//Vzo=knee voltage
+rZ=5//rZ=dynamic resistance in ohms
+R=800//R=series resistance in ohms
+Izmin=(Vs1-Vzo)/(R+rZ)//Izmin=current through zener diode when Vs is 15 V
+disp("A",Izmin,"Izmin=")
+Vomin=(rZ*Izmin)+Vzo//Vomin=corresponding minimum output voltage
+disp("V",Vomin,"Vomin=")
+Izmax=(Vs2-Vzo)/(R+rZ)//Izmax=current through zener diode when Vs is 30 V
+disp("A",Izmax,"Izmax=")
+Vomax=(rZ*Izmax)+Vzo//Vomax=corresponding maximum output voltage
+disp("V",Vomax,"Vomax=")
+disp("Output voltage Vo varies in the range Vomin to Vomax")
+
+
diff --git a/2300/CH5/EX5.7.12/Ex5_12.sce b/2300/CH5/EX5.7.12/Ex5_12.sce new file mode 100755 index 000000000..55fa7c87e --- /dev/null +++ b/2300/CH5/EX5.7.12/Ex5_12.sce @@ -0,0 +1,17 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 5:Semiconductor Junction Diodes
+clc
+clear
+V=35//V=supply voltage
+Iz=25*10^(-3)//Iz=diode current
+Il=5*10^(-3)//Il=load current
+Vzo=7//Vzo=knee voltage of zener diode
+rZ=6//rZ=dynamic resistance in ohms
+Vz=Vzo+(rZ*Iz)//Vz=zener voltage
+disp("V",Vz,"Vz=")
+I=Iz+Il//I=current through resistance R
+disp("A",I,"I=")
+R=(V-Vz)/I
+disp("ohm",R,"R=")
diff --git a/2300/CH5/EX5.7.2/Ex5_2.sce b/2300/CH5/EX5.7.2/Ex5_2.sce new file mode 100755 index 000000000..5e6ddcb23 --- /dev/null +++ b/2300/CH5/EX5.7.2/Ex5_2.sce @@ -0,0 +1,17 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 5:Semiconductor Junction Diodes
+clc
+clear
+//given
+e=1.6*10^-19//e=charge of an electron in C
+V1=0.06//V1=applied forward bias in V
+V2=(-0.06)//V2 =applied reverse bias in V
+kB=1.38*10^(-23)//kB=Boltzmann's constant in J/K
+T=300//T=Temperature in Kelvin
+//Is=reverse saturation current in A
+//I1=Is*(exp((e*V1)/(kB*T))-1)//I1=current for forward bias
+//I2=Is*(exp((e*V2)/(kB*T))-1)//I2=current for reverse bias
+a=((exp((e*V1)/(kB*T))-1))/((exp((e*V2)/(kB*T))-1))//a=(I1/I2)
+disp("",abs(a),"a")
diff --git a/2300/CH5/EX5.7.3/Ex5_3.sce b/2300/CH5/EX5.7.3/Ex5_3.sce new file mode 100755 index 000000000..9d2ab6613 --- /dev/null +++ b/2300/CH5/EX5.7.3/Ex5_3.sce @@ -0,0 +1,13 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//Chapter 5:Semiconductor Junction Diodes
+clc
+clear
+V=0.9//V=forward bias voltage
+I=60*10^(-3)//I=Current in ampere
+rdc=(V/I)//rdc=static resistance in ohm
+n=2//n=emission coefficient
+rac=((26*n*10^(-3))/I)//rac=dynamic resistance
+disp("ohm",rdc,"rdc=")
+disp("ohm",rac,"rac=")
diff --git a/2300/CH5/EX5.7.4/Ex5_4.sce b/2300/CH5/EX5.7.4/Ex5_4.sce new file mode 100755 index 000000000..3c94b6b63 --- /dev/null +++ b/2300/CH5/EX5.7.4/Ex5_4.sce @@ -0,0 +1,20 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 5:Semiconductor Junction Diodes
+clc
+clear
+e=1.6*10^(-19)//e=charge of an electron in C
+kB=1.38*10^(-23)//kB=Boltzmann's constant in J/K
+//V,V1=forward bias voltagesin V
+n=2//n=emission coefficient for silicon pn junction diode
+T=300//T=Temperature in kelvin
+//Is=Reverse saturation current in A
+//I=Is*(exp((e*V)/(n*kB*T)))//I=current for forward bias voltage V
+//2I=Is*(exp((e*V1)/(n*kB*T)))//2I=current for forward bias voltage V1
+//exp((e*(V1-V)/(n*kB*T)))=2
+a=(((n*kB*T)/e)*log(2))*10^3//a=(V1-V)=increase in the bias voltage in V
+disp("mV",a,"V1-V")
+
+
+
diff --git a/2300/CH5/EX5.7.5/Ex5_5.sce b/2300/CH5/EX5.7.5/Ex5_5.sce new file mode 100755 index 000000000..d4677e9db --- /dev/null +++ b/2300/CH5/EX5.7.5/Ex5_5.sce @@ -0,0 +1,17 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 5:Semiconductor Junction Diodes
+clc
+clear
+e=1.6*10^(-19)//e=charge of an electron in C
+kB=1.38*10^(-23)//kB=Boltzmann's constant in J/K
+n=2//n=emission coefficient for silicon pn junction diode
+T=300//T=Temperature in kelvin
+//Is=Reverse saturation current in A
+//V=bias voltage in V
+//I=Is*(exp((e*V)/(n*kB*T))-1)//I=reverse current in A
+//I=(-(Is/2))
+a=(((n*kB*T)/e)*log(1/2))*10^3//a=bias for reverse current in silicon pn junction diode
+disp("mV",a,"V")
+disp("The negative sign suggests diode in reverse bias")
diff --git a/2300/CH5/EX5.7.6/Ex5_6.sce b/2300/CH5/EX5.7.6/Ex5_6.sce new file mode 100755 index 000000000..764990c2f --- /dev/null +++ b/2300/CH5/EX5.7.6/Ex5_6.sce @@ -0,0 +1,15 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 5:Semiconductor Junction Diodes
+clc
+clear
+//T1,T2=Temperature in kelvin
+//Is1=Reverse saturation current at temperature T1 in ampere
+//Is2=Reverse saturation current at temperature T2 in ampere
+//Is2=Is1*2^((T2-T1)/10)
+//((T2-T1)/10)*log(2)=log(Is2/Is1)
+//b=(Is2/Is1)
+b=50
+a=((10*log(b))/log(2))//a=(T2-T1)=rise in temperature in degree celcius
+disp("C",a,"T2-T1")
diff --git a/2300/CH5/EX5.7.7/Ex5_7.sce b/2300/CH5/EX5.7.7/Ex5_7.sce new file mode 100755 index 000000000..010fb956d --- /dev/null +++ b/2300/CH5/EX5.7.7/Ex5_7.sce @@ -0,0 +1,17 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 5:Semiconductor Junction Diodes
+clc
+clear
+V=0.6//V=cutin voltage in V
+r=150//r=forward resistance in ohm
+P=200*(10^-3)//P=maximum power in Watt
+//P=(i^2)*r where i=maximum safe diode current
+i=(sqrt(P/r))*10^3
+disp("mA",i,"i=")
+//i=((Vb/3)-V)/3 by applying KCL
+Vb=((3*i)+V)*3//Vb=maximum permissible battery voltage
+disp("V",Vb,"Vb=")
+
+
diff --git a/2300/CH5/EX5.7.8/Ex5_8.sce b/2300/CH5/EX5.7.8/Ex5_8.sce new file mode 100755 index 000000000..ea415cdd3 --- /dev/null +++ b/2300/CH5/EX5.7.8/Ex5_8.sce @@ -0,0 +1,24 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 5:Semiconductor Junction Diodes
+clc
+clear
+V=15//V=supply voltage
+Vz=12//Vz=Zener voltage
+P=0.36//P=power of Zener diode
+//P=Vz*I
+I=(P/Vz)//I=maximum allowable Zener current
+disp("A",I,"I=")
+Vr=V-Vz//Vr=voltage drop across series resistance R
+disp("V",Vr,"Vr=")
+R=Vr/I//R=series resistance
+disp("ohm",R,"R=")
+//I=Iz+Il
+Iz=2*(10^-3)//Iz=minimum diode current
+Il=I-Iz//Il=current through load resistance Rl
+disp("A",Il,"Il=")
+Rlm=Vz/Il//Rlm=minimum value of Rl
+disp("ohm",Rlm,"Rlm=")
+disp("The allowable range of variation of Rl is 428.6ohm<=Rl<infinite")
+
diff --git a/2300/CH5/EX5.7.9/Ex5_9.sce b/2300/CH5/EX5.7.9/Ex5_9.sce new file mode 100755 index 000000000..e95682590 --- /dev/null +++ b/2300/CH5/EX5.7.9/Ex5_9.sce @@ -0,0 +1,29 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 5:Semiconductor Junction Diodes
+clc
+clear
+V=15//V=supply voltage
+Vz=12//Vz=Zener voltage
+P=0.36//P=power of Zener diode
+//P=Vz*I
+I=(P/Vz)//I=maximum allowable Zener current
+disp("A",I,"I=")
+Iz=2*10^(-3)//Iz=minimum value attained by the zener current
+Rl=1000//Rl=load resistance
+i=Vz/Rl//i=load current
+disp("A",i,"i=")
+Imin=Iz+i//Imin=minimum allowable value of current
+R=100//R=series resistance
+Vr=Imin*R//Vr=voltage drop across R
+disp("V",Vr,"Vr=")
+Vmin=Vz+Vr//Vmin=minimum value of V
+disp("V",Vmin,"Vmin=")
+I1=I+i
+disp("A",I1,"I1=")
+VR=I1*R
+disp("V",VR,"VR=")
+Vmax=Vz+VR//Vmax=maximum value of V
+disp("V",Vmax,"Vmax=")
+disp("V can vary between Vmin & Vmax")
diff --git a/2300/CH6/EX6.11.1/Ex6_1.sce b/2300/CH6/EX6.11.1/Ex6_1.sce new file mode 100755 index 000000000..1d3a75c9c --- /dev/null +++ b/2300/CH6/EX6.11.1/Ex6_1.sce @@ -0,0 +1,43 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 6:Diode Circuits
+clc;
+clear;
+//given data
+Vrms=20; //in volts
+Vm=20*1.41; //in volts
+Rf=50; //forward resistance in ohms
+RL=1200; //load resistance in ohms
+
+Im=Vm/(Rf+RL); //peak load current
+format("v",7)
+disp('A',Im,'Im=');
+
+Idc=Im/%pi; //dc load current
+format("v",8)//to set the current printing format with the specified parameter type
+disp('A',Idc,'Idc=');
+
+Irms=Im/2;//rms load current
+Irms1=sqrt((Irms^2)-(Idc^2))//rms ac load current
+format("v",8)
+disp('A',Irms1,'rms ac load current is=');
+
+Vdc=Idc*Rf; //Dc voltage across the diode
+format("v",6)
+disp('V',Vdc,'Dc voltage across the diode=');
+
+Pdc=Idc*Idc*RL; //Dc output power
+format("v",6)
+disp('W',Pdc,'Dc output power=');
+
+n=40.6/(1+(Rf/RL)); //conversion efficiency
+format("v",5)
+disp('%',n,'conversion efficiency=');
+
+s=Rf*100/RL; //Pertcentage regulation
+format("v",5)
+disp('%',s,'Pertcentage regulation=');
+
+//end
+
diff --git a/2300/CH6/EX6.11.2/Ex6_2.sce b/2300/CH6/EX6.11.2/Ex6_2.sce new file mode 100755 index 000000000..57501ef5b --- /dev/null +++ b/2300/CH6/EX6.11.2/Ex6_2.sce @@ -0,0 +1,37 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 6:Diode Circuits
+clc;
+clear;
+//given data
+Rf=100; //forward resistance in ohms
+Rl=1000; //load resistance in ohms
+n=10; //Primary to secondary turns ratio
+Vp=240; //Primary input V(rms)
+
+Vm=24*(2^(1/2))/2; //secondary peak voltage from cenre tap
+Vs=Vp/n; //Secondary input voltage
+Im=Vm/(Rf+Rl); //peak current through the resistance in A
+Idc=(2*Im)/%pi; //DC Load current in A
+format("v",8)
+disp('A',Idc,'DC load current Idc=',);
+I=Idc/2; //Direct current supplied by each diode in A
+format("v",7)
+disp('A',I,'Direct current supplied by each diode Idc=',);
+Pdc=Idc*Idc*Rl; //DC power output
+format("v",6)
+disp('W',Pdc,'Pdc=');
+Irms=Im/(2^(1/2));
+Vrp=sqrt((Irms*Irms)-(Idc*Idc))*Rl; //Ripple voltage in V
+format("v",7)
+disp('V',Vrp,'Ripple voltage Vrp=');
+
+
+M=(Rf*100)/Rl; //percentage regulation
+disp('%',M,'Percentage regulation=');
+n=81.2/(1+(Rf/Rl)); //Efficiency of rectification
+format("v",5)
+disp('%',n,'Efficiency of rectification');
+
+//end
diff --git a/2300/CH6/EX6.11.3/Ex6_3.sce b/2300/CH6/EX6.11.3/Ex6_3.sce new file mode 100755 index 000000000..e9d8f00de --- /dev/null +++ b/2300/CH6/EX6.11.3/Ex6_3.sce @@ -0,0 +1,25 @@ + +//scilab 5.4.1
+//windows 7 operating system
+//chapter 6:Diode Circuits
+clc;
+clear;
+//given data
+Rf=50; //forward resistance in ohms
+Rl=2500; //load resistance in ohms
+Vp=30; //Primary input V(rms)
+Vm=30*sqrt(2);
+
+Im=Vm/(2*Rf+Rl); //peak load current in A
+Idc=2*Im/%pi;
+
+Vdc=Idc*Rl; //DC load voltage
+disp('V',Vdc,'Vdc=');
+Irms=Im/sqrt(2);
+Vrp=Rl*sqrt(((Irms*Irms)-(Idc*Idc))); //Ripple voltage in V
+disp('V',Vrp,'Ripple voltage Vrp=');
+
+M=(2*Rf/Rl)*100; //Percentage regulation
+disp('%',M,'Percentage regulation=');
+
+//end
diff --git a/2300/CH6/EX6.11.4/Ex6_4.sce b/2300/CH6/EX6.11.4/Ex6_4.sce new file mode 100755 index 000000000..e965be1ba --- /dev/null +++ b/2300/CH6/EX6.11.4/Ex6_4.sce @@ -0,0 +1,20 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 6:Diode Circuits
+clc;
+clear;
+//given data
+
+Vdc=20; //DC value in V
+Vpp=1; //Peak to peak ripple voltage in V
+
+Vp=Vpp/2; //Peak ripple voltage in V
+Vrms=Vp/sqrt(2); //Vrms voltage in V
+S=Vrms/Vdc; //Ripple Factor
+format("v",7)
+disp(S,'Ripple factor=')
+T=S*100;
+format("v",5)
+disp("%",T,'Percentage Ripple=')
+//end
diff --git a/2300/CH6/EX6.11.5/Ex6_5.sce b/2300/CH6/EX6.11.5/Ex6_5.sce new file mode 100755 index 000000000..38ad3fee1 --- /dev/null +++ b/2300/CH6/EX6.11.5/Ex6_5.sce @@ -0,0 +1,42 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 6 Diode Circuits
+clc
+clear
+//For a full wave rectifier
+//L-type LC filter
+f=50//f=line frequency in Hz
+w=2*%pi*f
+Vdc=10//Vdc=dc output voltage
+Idc=100*10^-3//Idc=load current in Amperes
+y=0.02//y=allowable ripple factor
+//y=sqrt(2)/(12*(w^2)*L*C)
+//Let L*C=a...............(1)
+a=sqrt(2)/(y*12*(w^2))
+RL=Vdc/Idc//RL=load resistance
+//Lc=critical inductance
+//Lc=RL/(3*w)
+//For line frequency of 50Hz,Lc=RL/(300*%pi)
+//Lc=RL/950
+Lc=RL/950
+format("v",4)
+L=0.1//Assumed inductance in henry
+C=a/L//C=capacitance calculated from equation (1)
+format("v",4)
+L1=1//Assumed inductance in henry
+C1=a/L1//C1=capacitance calculated from equation (1)
+format("v",4)
+Rb=950*L1//Rb=bleeder resistance for good voltage regulation
+disp("The designed values of the components for a full wave rectifier with L-type LC filter are")
+disp("ohm",RL,"The load resistance RL is =")
+disp("H",Lc,"The critical inductance Lc is =")
+disp("H",L,"The inductance L is=")
+disp("µF",C/10^-6,"The capacitance C is")//C is converted in terms of microfarad
+//In textbook 957µF is approximately taken as 600µF
+disp("H",L1,"But if the inductance L designed is of the value =")
+disp("µF",C1/10^-6,"the capacitance C will be of the value =")//C1 is converted in terms of microfarad
+disp("So,a standard value of 50µF can be used in practice")
+disp("ohm",Rb,"The bleeder resistance Rb for good voltage regulation is=")
+disp("As Rb is much greater than RL,little power is wasted in Rb.This reflects the advantage of selecting L>Lc")
+
+
diff --git a/2300/CH7/EX7.13.1/Ex7_1.sce b/2300/CH7/EX7.13.1/Ex7_1.sce new file mode 100755 index 000000000..22ce2e58b --- /dev/null +++ b/2300/CH7/EX7.13.1/Ex7_1.sce @@ -0,0 +1,17 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 7:Junction Transistor Characteristics
+clc;
+clear;
+//given data
+a=0.99;//a=fraction of the emitter current contributed by the carriers injected into the base and reaching the collector
+Rl=4500; //Load resistance in ohms
+rd=50; //dynamic resistance in ohms
+
+Av=a*Rl/rd; //Voltage gain
+Ap=a*Av;//Power gain
+
+disp(Av,'Av=');
+disp(Ap,'Ap=');
+
diff --git a/2300/CH7/EX7.13.2/Ex7_2.sce b/2300/CH7/EX7.13.2/Ex7_2.sce new file mode 100755 index 000000000..e5f6e7110 --- /dev/null +++ b/2300/CH7/EX7.13.2/Ex7_2.sce @@ -0,0 +1,18 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 7:Junction Transistor Characteristics
+clc;
+clear;
+//given data
+a=0.98;//a=fraction of the emitter current contributed by the carriers injected into the base and reaching the collector
+Ie=0.003; //emitter current in A
+Ico=10*10^-6; //reverse saturation current in A
+
+Ic=a*Ie+Ico; //collector current in A
+format("v",8)
+disp('mA',Ic/10^-3,'Ic=');//Ic is converted in terms of mA
+
+Ib=Ie-Ic; //base current in A
+format("v",8)
+disp('µA',Ib/10^-6,'Ib=');//Ib is converted in terms of µA
diff --git a/2300/CH7/EX7.13.3/Ex7_3.sce b/2300/CH7/EX7.13.3/Ex7_3.sce new file mode 100755 index 000000000..7bbf4f5e7 --- /dev/null +++ b/2300/CH7/EX7.13.3/Ex7_3.sce @@ -0,0 +1,19 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 7:Junction Transistor Characteristics
+clc;
+clear;
+//given data
+a=0.975;//a=fraction of the emitter current contributed by the carriers injected into the base and reaching the collector
+Ico=10*10^-6; //reverse saturation current in A
+Ib=250*10^-6; //base current in A
+
+b=a/(1-a); //transistor gain
+disp(b,'gain B=');
+Ic=b*Ib+(b+1)*Ico; //collector current in A
+format("v",5)
+disp('mA',Ic/10^-3,'Ic=');//Ic is converted in terms of mA
+Ie=(Ic-Ico)/a; //emitter current in A
+format("v",5)
+disp('mA',Ie/10^-3,'Ie=');//Ie is converted in terms of mA
diff --git a/2300/CH7/EX7.13.4/Ex7_4.sce b/2300/CH7/EX7.13.4/Ex7_4.sce new file mode 100755 index 000000000..6af4164a5 --- /dev/null +++ b/2300/CH7/EX7.13.4/Ex7_4.sce @@ -0,0 +1,16 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 7:Junction Transistor Characteristics
+clc;
+clear;
+//given data
+b=125;//b=forward current transfer ratio or dc current gain
+Vbe=0.6; //base to emitter voltage in V
+
+Ib=(10-Vbe)/(310*10^3); //base current in A
+disp('mA',Ib*10^3,'Ib=');
+Ic=b*Ib; //collector current in A
+disp('mA',Ic*10^3,'Ic=');
+Vce=20-(Ic*5000); //collector to emitter voltage
+disp('V',Vce,'Vce=');
diff --git a/2300/CH7/EX7.13.5/Ex7_5.sce b/2300/CH7/EX7.13.5/Ex7_5.sce new file mode 100755 index 000000000..528579ced --- /dev/null +++ b/2300/CH7/EX7.13.5/Ex7_5.sce @@ -0,0 +1,28 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 7 Junction Transistor Characteristics
+clc
+clear
+disp("As the base is forward biased,transistor is not cut off.")
+disp("Assuming the transistor in active region ")
+VBB=5//VBB=base bias voltage
+VBE=0.7//VBE=voltage between base and emitter terminal
+RB=220//RB=base circuit resistor in kilo ohms
+IB=(VBB-VBE)/RB//IB=base current in mA(By applying Kirchhoff's voltage law)
+format("v",7)
+disp("mA",IB,"IB=")
+disp("Ico<<IB")//Ico=reverse saturation current and is given as 22nA
+B=100//B=dc current gain
+IC=B*IB
+format("v",5)
+disp("mA",IC,"IC=")
+Vcc=12//Vcc=collector supply voltage
+Rc=3.3//Rc=collector circuit resistor in kilo ohms
+VCB=Vcc-(IC*Rc)-VBE//VCB=voltage between collector and base terminal (by applying Kirchhoff's voltage law to the collector circuit)
+disp("V",VCB,"VCB=")
+disp("A positive value of VCB implies that for n-p-n transistor,the collector junction is reverse biased and hence the transistor is actually in active region")
+IE=-(IB+IC)//IE=emitter current
+disp("mA",IE,"IE=")
+format("v",7)
+disp("The negative sign indicates that IE actually flows in the opposite direction.")
+disp("IB and IC do not depend on the collector circuit resistance Rc.So if it is increased, at one stage VCB becomes negative and transistor goes into saturation region ")
diff --git a/2300/CH7/EX7.13.6/Ex7_6.sce b/2300/CH7/EX7.13.6/Ex7_6.sce new file mode 100755 index 000000000..7f254995c --- /dev/null +++ b/2300/CH7/EX7.13.6/Ex7_6.sce @@ -0,0 +1,27 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 7 Junction Transistor Characteristics
+clc
+clear
+disp("Applying Kirchhoff voltage law to the base & collector circuit respectively")
+//(R1*IB)+VBE+(RE*(Ic+IB))=VBB..........(1)
+//(R2*Ic)+VCE+(RE*(Ic+IB))=Vcc..........(2)
+R1=47//R1=value of base circuit resistance in kilo ohms
+RE=2.2//RE=emitter circuit resistance in kilo ohms
+R2=3.3//R2=collector circuit resistance in kilo ohms
+VBE=0.85//VBE=voltage between base and emitter terminals
+VBB=5//VBB=base supply voltage
+Vcc=9//Vcc=collector supply voltage
+VCE=0.22//VCE=voltage between collector and emitter terminals
+R=[(R1+RE) RE;RE (R2+RE)];
+V=[(VBB-VBE);(Vcc-VCE)];
+I=inv(R)*V
+disp("mA",I(1),"IB=")
+disp("mA",I(2),"IC=")
+hFE=110//hFE=dc current gain
+disp("The minimum base current required for saturation is")
+IBmin=I(2)/hFE
+disp("mA",IBmin,"IBmin=")
+if (I(1)<IBmin) then
+ disp("As IB<IBmin transitor is not in the saturation region.It must be in the active region.")
+end
diff --git a/2300/CH7/EX7.13.7/Ex7_7.sce b/2300/CH7/EX7.13.7/Ex7_7.sce new file mode 100755 index 000000000..d98c318aa --- /dev/null +++ b/2300/CH7/EX7.13.7/Ex7_7.sce @@ -0,0 +1,20 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 7 Junction Transistor Characteristics
+clc
+clear
+IB=(30*10^-3)//IB=base current (in mA) of transistor in CE mode
+IC1=3.5
+IC2=3.7
+VCE1=7.5
+VCE2=12.5//IC1 and IC2 are the change found in collector current IC in mA when collector emitter voltage VCE changes from VCE1 to VCE2(in volts)
+VCE=VCE2-VCE1
+IC=IC2-IC1
+disp("Output resistance is")
+Ro=VCE/IC
+disp("kilo ohm",Ro,"The output resistance is =")
+b=IC2/IB//b=forward current transfer ratio or dc current gain
+disp(b,"b=")
+a=b/(b+1)//a=fraction of the emitter current contributed by the carriers injected into the base and reaching the collector
+//b=a/(1-a) Hence a=b/(b+1)
+disp(a,"a=")
diff --git a/2300/CH7/EX7.13.8/Ex7_8.sce b/2300/CH7/EX7.13.8/Ex7_8.sce new file mode 100755 index 000000000..56b38cd03 --- /dev/null +++ b/2300/CH7/EX7.13.8/Ex7_8.sce @@ -0,0 +1,29 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 7 Junction Transistor Characteristics
+clc
+clear
+b=100//b=forward current transfer ratio or dc current gain
+Vz=4//Vz=Zener diode voltage
+IL=2//IL=load current in mA
+Iz=5//Iz=Zener current in mA
+VCC=12//VCC=collector supply voltage
+VEB1=0.7
+VEB2=VEB1//VEB1,VEB2=emitter-to-base voltage for both transistors Q1 and Q2 respectively
+//Since IL is the collector current of transistor Q1
+IB=IL/b//IB=base current of transistor Q1
+IE=IB+IL//IE=emitter current of transistor Q1
+VR1=VCC-VEB2-Vz//VR1=voltage drop across resistor R1
+R1=VR1/(IB+Iz)
+format("v",5)
+disp("kilo ohm",R1,"The resistance R1 is =")
+VR2=VEB2+Vz-VEB1//VR2=voltage drop across resistor R2
+R2=VR2/IE
+format("v",5)
+disp("kilo ohm",R2,"The resistance R2 is =")
+//VBC=VCC-VR2-VEB1-(IL*RL) where VBC=base-collector voltage drop for transistor Q1
+//VBC=7.3-(2*RL) where RL=load resistance for transistor Q1 in terms of kilo ohm
+disp("For Q1 to remain in the active region,VBC≥0,i.e.")
+disp("RL≤(7.3/2) kilo ohm")
+disp("RL≤3.65 kilo ohm")
+disp("So the range of RL for Q1 to remain in the active region is 0≤RL≤3.65 kilo ohm")
diff --git a/2300/CH8/EX8.14.1/Ex8_1.sce b/2300/CH8/EX8.14.1/Ex8_1.sce new file mode 100755 index 000000000..3e8f54242 --- /dev/null +++ b/2300/CH8/EX8.14.1/Ex8_1.sce @@ -0,0 +1,28 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 8:Junction Transistors:Biasing and Amplification
+clc;
+clear;
+//given data
+b=99;
+Vbe=0.7; //Volatge between base and emitter in V
+Vcc=12; //Volatge source applied at collector in V4
+Rl=2*10^3; //load resistance in ohms
+Rb=100*10^3; //Resistance at base in ohms
+Ib=(12-0.7)/((100*Rl)+Rb); //Base current in micro Ampere
+format("v",7)
+disp('mA',Ib*10^3,'Ib=');
+
+Ic=b*Ib;
+format("v",7)
+disp('mA',Ic*10^3,'Ic=');
+Vce=4.47; //Voltage between collector and emitter in V
+
+S=(b+1)/(1+b*Rl/(Rl+Rb)); //stabilty factor 1
+disp(S,'S=');
+S1=b/(Rb+Rl*(1+b)); //stabilty factor 2 in A/V
+disp('A/V',S1,'S1=');
+S2=(Vcc-Vbe-(Ic*Rl))/(Rb+Rl*(1+b)); //stability factor 3 in A
+disp('A',S2,'S2=');
+
diff --git a/2300/CH8/EX8.14.10/Ex8_10.sce b/2300/CH8/EX8.14.10/Ex8_10.sce new file mode 100755 index 000000000..9df239768 --- /dev/null +++ b/2300/CH8/EX8.14.10/Ex8_10.sce @@ -0,0 +1,37 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 8 Junction Transistors:Biasing and Amplification
+clc
+clear
+VBE=0.7//VBE=base emitter voltage
+b=90//b=dc current gain of the common emitter transistor
+VCC=10//VCC=collector supply voltage
+RE=1.2//RE=resistance in kilo ohms connected to the emitter terminal
+RC=4.7//RC=resistance in kilo ohms connected to the collector terminal
+RB=250//RB=resistance in kilo ohms connected to the base terminal
+//Applying Kirchhoff's voltage law
+//VCE=(RB*IB)+VBE where VCE=collector emitter voltage
+//Also VCC=((IB+IC)*RC)+VCE+(IE*RE)
+//IC=b*IB where IC=collector current and IB=base current
+//IE=IC+IB where IE=emitter current
+//IE=(b+1)*IB
+IB=(VCC-VBE)/(((b+1)*(RC+RE))+RB)
+format("v",6)
+IE=(b+1)*IB
+format("v",5)
+VCE=(RB*IB)+VBE
+format("v",5)
+IC=b*IB
+format("v",5)
+disp("mA",IE,"The quiescent value of IE is =")
+disp("V",VCE,"The quiescent value of VCE is =")
+disp("mA",IC,"When dc current gain=90,IC=")
+//b is increased by 50%
+b1=((50*b)/100)+b
+IB1=(VCC-VBE)/(((b1+1)*(RC+RE))+RB)
+IC1=b1*IB1
+disp("mA",IC1,"When dc current gain is increased by 50%,IC=")
+x=((IC1-IC)/IC)*100//x=increase in the collector current
+disp("%",x,"The increase in the collector current IC is =")
+disp("The percentage increase of IC being less than that of the dc current gain,the circuit provides some stabilization against the changes in the dc current gain.")
+disp("VCE does not depend on dc current gain and hence it is not affected when the dc current gain changes.")
diff --git a/2300/CH8/EX8.14.11/Ex8_11.sce b/2300/CH8/EX8.14.11/Ex8_11.sce new file mode 100755 index 000000000..022196943 --- /dev/null +++ b/2300/CH8/EX8.14.11/Ex8_11.sce @@ -0,0 +1,42 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 8 Junction Transistors:Biasing and Amplification
+clc
+clear
+VBE=0.7//VBE=base emitter voltage
+b=99//b=dc current gain of the common emitter transistor
+VCC=15//VCC=collector supply voltage
+RE=7//RE=resistance in kilo ohms connected to the emitter terminal
+RC=4//RC=resistance in kilo ohms connected to the collector terminal
+RB=5//RB=resistance in kilo ohms connected to the base terminal
+VEE=(-15)//VEE=emitter supply voltage
+//Applying Kirchhoff's voltage law in the base emitter loop
+//-VEE=(RB*IB)+VBE +(IE*RE)
+//IC=b*IB where IC=collector current and IB=base current
+//IE=IC+IB where IE=emitter current
+//IE=(b+1)*IB
+IB=(-VEE-VBE)/(RB+((b+1)*RE))
+format("v",7)
+disp("mA",IB,"The quiescent value of IB is =")
+IC=b*IB
+format("v",5)
+disp("mA",IC,"The quiescent value of IC is =")
+IE=(b+1)*IB
+format("v",5)
+disp("mA",IE,"The quiescent value of IE is =")
+//Applying Kirchhoff's voltage law in the output circuit
+//(IC*RC)+VCE+(IE*RE)=VCC-VEE
+VCE=(VCC-VEE)-(IE*RE)-(IC*RC)
+format("v",5)
+disp("V",VCE,"The quiescent value of VCE is =")
+//b is increased by 20%
+b1=((20*b)/100)+b
+IB1=(-VEE-VBE)/(RB+((b1+1)*RE))
+format("v",10)
+IC1=b1*IB1
+format("v",6)
+disp("mA",IC1,"When dc current gain is increased by 20%,IC=")
+x=((IC1-IC)/IC)*100//x=increase in the collector current
+disp("%",x,"The increase in the collector current IC is =")
+disp("Since a 20% increase in current gain produces a mere 0.284% enhancement of IC,the circuit provides a good stabilization against the changes in the current gain")
+//In textbook the increase in the collector current is given as 0.5% which is actually coming as 0.284% approximately
diff --git a/2300/CH8/EX8.14.12/Ex8_12.sce b/2300/CH8/EX8.14.12/Ex8_12.sce new file mode 100755 index 000000000..178a5840a --- /dev/null +++ b/2300/CH8/EX8.14.12/Ex8_12.sce @@ -0,0 +1,29 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 8 Junction Transistors:Biasing and Amplification
+clc
+clear
+//For a self-bias circuit
+VBE=0.7//VBE=base emitter voltage
+b=100//b=dc current gain of the common emitter transistor
+VCC=22//VCC=collector supply voltage
+R1=82//R1=resistance in kilo ohms
+R2=16//R2=resistance in kilo ohms
+RL=2.2//RL=load resistance in kilo ohms
+Re=0.750//Re=resistance in kilo ohms connected to the emitter terminal
+//ICO is to be neglected
+VT=(R2*VCC)/(R1+R2)//VT=Thevenin equivalent voltage
+RT=(R1*R2)/(R1+R2)//RT=Thevenin equivalent resistance
+//Applying Kirchhoff's voltage law to the base circuit
+//(IB*(RT+Re))+(IC*Re)=VT-VBE
+//IC=b*IB
+IB=(VT-VBE)/(RT+Re+(b*Re))//IB=base current
+IC=b*IB//IC=collector current
+format("v",8)
+//Applying Kirchhoff's voltage law to the collector circuit
+//(IC*(RL+Re))+(IB*Re)+VCE=VCC
+VCE=VCC-((IC*(RL+Re))+(IB*Re))//VCE=collector emitter voltage
+format("v",5)
+disp("The operating point is specified by")
+disp("mA",IC,"IC=")
+disp("V",VCE,"VCE=")
diff --git a/2300/CH8/EX8.14.13/Ex8_13.sce b/2300/CH8/EX8.14.13/Ex8_13.sce new file mode 100755 index 000000000..bc5f99959 --- /dev/null +++ b/2300/CH8/EX8.14.13/Ex8_13.sce @@ -0,0 +1,36 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 8 Junction Transistors:Biasing and Amplification
+clc
+clear
+RE=0.680//RE=resistance in kilo ohms connected to the emitter terminal
+RC=2.7//RC=resistance in kilo ohms connected to the collector terminal
+//RB=resistance connected to the base terminal
+VCE=7.3//VCE=collector emitter voltage
+VBE=0.7//VBE=base emitter voltage
+Vre=2.1//Vre=voltage across RE resistance
+IB=0.02//IB=base current in mA
+IE=Vre/RE//IE=emitter current in mA
+IC=IE-IB//IC=collector current in mA
+b=IC/IB//b=current gain
+format("v",6)
+disp(b,"The current gain β is =")
+VCC=(IC*RC)+VCE+Vre//VCC=collector supply voltage
+format("v",5)
+disp("V",VCC,"The collector supply voltage VCC is =")
+//Voltage across RB (Vrb)resistance is given by
+Vrb=VCC-(VBE+Vre)
+RB=Vrb/IB
+format("v",5)
+disp("kilo ohm",RB,"The resistance RB is =")
+//To draw the DC load line,we neglect the base current in RE resistance
+//Equation for DC load line is:
+//VCE=VCC-(RC+RE)*IC
+disp("For the DC load line")
+disp("V",VCC,"The intercept of the load line on the VCE-axis(X-axis) is =")
+disp("mA",VCC/(RC+RE),"The intercept of the load line on the IC axis(Y-axis) is =")
+disp("The DC load line is the straight line joining above two intercepts.")
+disp("The co-ordinates of the operating point Q on the load line are (7.3V,3.07mA)")
+
+
+
diff --git a/2300/CH8/EX8.14.14/Ex8_14.sce b/2300/CH8/EX8.14.14/Ex8_14.sce new file mode 100755 index 000000000..a9b3ab9e3 --- /dev/null +++ b/2300/CH8/EX8.14.14/Ex8_14.sce @@ -0,0 +1,44 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 8 Junction Transistors:Biasing and Amplification
+clc
+clear
+VBE=0.7//VBE=base emitter voltage
+b=120//b=dc current gain of the common emitter transistor
+VCC=15//VCC=collector supply voltage
+R1=72//R1=resistance in kilo ohms
+R2=8//R2=resistance in kilo ohms
+RL=2//RL=load resistance in kilo ohms
+Re=0.700//Re=resistance in kilo ohms connected to the emitter terminal
+RC=2//RC=resistance in kilo ohms connected to the collector terminal
+Rin=1.5//Rin=input resistance in kilo ohms of the amplifier
+vi=1//vi=amplitude of the ac input signal in mV
+VT=(R2*VCC)/(R1+R2)//VT=Thevenin equivalent voltage
+RT=(R1*R2)/(R1+R2)//RT=Thevenin equivalent resistance
+//Applying Kirchhoff's voltage law to the base circuit
+//(IB*(RT+Re))+(IC*Re)=VT-VBE
+//IC=b*IB
+IB=(VT-VBE)/(RT+Re+(b*Re))//IB=base current
+IC=b*IB//IC=collector current
+format("v",5)
+//Applying Kirchhoff's voltage law to the collector circuit
+//(IC*(RL+Re))+(IB*Re)+VCE=VCC
+VCE=VCC-((IC*(RL+Re)))//VCE=collector emitter voltage(neglecting small term IB*RE)
+format("v",5)
+//Equation for DC load line is:
+//VCE=VCC-(RL+Re)*IC
+disp(" 1. For the DC load line")
+disp("The operating point Q is specified by")
+disp("mA",IC,"IC=")
+disp("V",VCE,"VCE=")
+disp("V",VCC,"The intercept of the dc load line on the VCE-axis(X-axis) is =")
+disp("mA",VCC/(RC+Re),"The intercept of the dc load line on the IC axis(Y-axis) is =")
+disp("The DC load line is the straight line joining above two intercepts.")
+Rac=(RL*RC)/(RL+RC)//Rac=ac load resistance
+disp(" 2. For the AC load line")
+disp("V",VCE+(IC*Rac),"The intercept of the ac load line on the VCE-axis(X-axis) is =")
+disp("The line joining the above intercept and the operating point Q extended to meet the IC axis(Y-axis) gives the AC load line")
+AV=-(b*Rac)/Rin//AV=voltage gain of the amplifier
+vo=abs(AV)*vi//vo=amplitude of the output voltage signal
+disp("mV",vo," 3. The amplitude of the output voltage vo is =")
+
diff --git a/2300/CH8/EX8.14.2/Ex8_2.sce b/2300/CH8/EX8.14.2/Ex8_2.sce new file mode 100755 index 000000000..abbedd1d0 --- /dev/null +++ b/2300/CH8/EX8.14.2/Ex8_2.sce @@ -0,0 +1,29 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 8:Junction Transistors:Biasing and Amplification
+clc;
+clear;
+//given data
+b=49;//b=dc current gain of the common emitter transistor
+Vbe=0.2; //Volatge between base and emitter in V
+Vcc=10; //Volatge source applied at collector in V4
+Vce=5; //Collector to emitter voltage in V
+Ic=4.9; //collector current in mA
+Rl=1; //load resistance in kilo ohms
+S=10; //stability factor
+
+Ib=Ic/b; //base current in mA
+Re=((Vcc-Vce-(Ic*Rl))/(Ic+Ib))*1000; //Resistance at emitter in ohms
+disp('ohms',Re,'Re=');
+//S=((1+b)*(1+(RT/Re)))/(1+b+(RT/Re))
+RT=((S-1)*Re)/(1-(S/(1+b)))//RT=Thevenin resistance =(R1*R2)/(R1+R2)
+VT=(Ib*(10^-3)*RT)+Vbe+((Ib+Ic)*(10^-3)*Re)//VT=Thevenin voltage=(R2*Vcc)/(R1+R2)
+// R2/(R1+R2)=VT/Vcc
+R1=(RT*Vcc)/VT
+format("v",6)
+disp("kilo ohm",R1/10^3,"R1=")
+R2=((VT/Vcc)*R1)/(1-(VT/Vcc))
+disp("ohm",R2,"R2=")
+
+
diff --git a/2300/CH8/EX8.14.3/Ex8_3.sce b/2300/CH8/EX8.14.3/Ex8_3.sce new file mode 100755 index 000000000..be61e6779 --- /dev/null +++ b/2300/CH8/EX8.14.3/Ex8_3.sce @@ -0,0 +1,27 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 8:Junction Transistors:Biasing and Amplification
+clc;
+clear;
+//given data
+hib=30; //h parameter of CB a transistor
+hrb=4*10^-4; //h parameter of CB a transistor
+hfb=-0.99; //h parameter of CB a transistor
+hob=0.9*10^-6; //h parameter of CB a transistor in S
+Rl=6*10^3; //Load resistance in ohms
+
+AI=-hfb/(1+(hob*Rl)); //Current gain
+disp(AI,'AI=');
+
+Ri=hib-((hfb*hrb*Rl)/(1+(hob*Rl))); //Input resistance in ohms
+disp('ohms',Ri,'Ri=');
+
+Ro=hib/((hib*hob)-(hfb*hrb)); //Output Resistance in kohms
+disp('kilo ohms',Ro*10^-3,'Ro=');
+
+AV=AI*Rl/Ri; //Voltage gain
+disp(AV,'AV=');
+
+AP=AI*AV; //Power gain
+disp(AP,'AP=');
diff --git a/2300/CH8/EX8.14.4/Ex8_4.sce b/2300/CH8/EX8.14.4/Ex8_4.sce new file mode 100755 index 000000000..fe6a836d3 --- /dev/null +++ b/2300/CH8/EX8.14.4/Ex8_4.sce @@ -0,0 +1,21 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 8:Junction Transistors:Biasing and Amplification
+clc;
+clear;
+//given data
+Rg=1*10^3; //internal resistance in ohms
+Rl=20*10^3; //Load resistance in ohms
+hie=1*10^3; //h parameter of the transistor in terms of ohms
+hre=2.5*10^-4; //h parameter of the transistor
+hfe=150; //h parameter of the transistor
+hoe=1/(40*10^3); //h parameter of the transistor in terms of mho
+
+AI=(-hfe)/(1+(hoe*Rl)); //Current gain
+disp(AI,'AI=');
+
+Ri=hie+(AI*hre*Rl); //input resistance in ohms
+disp('ohms',Ri,'Ri=');
+Ro=(Rg+hie)/((Rg*hoe)+(hie*hoe)-(hfe*hre)); //output resistance in ohms
+disp('kilo ohms',Ro*10^-3,'Ro=');
diff --git a/2300/CH8/EX8.14.5/Ex8_5.sce b/2300/CH8/EX8.14.5/Ex8_5.sce new file mode 100755 index 000000000..5640630aa --- /dev/null +++ b/2300/CH8/EX8.14.5/Ex8_5.sce @@ -0,0 +1,25 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 8:Junction Transistors:Biasing and Amplification
+clc;
+clear;
+//given data
+Rl=5*10^3; //Load resistance in ohms
+hie=1*10^3; //h parameter of the transistor in terms of ohms
+hre=5*10^-4; //h parameter of the transistor
+hfe=100; //h parameter of the transistor
+hoe=25*10^-6; //h parameter of the transistor in terms of mho
+Rg=1*10^3; //source reistance in ohms
+
+AI=(-hfe)/(1+(hoe*Rl)); //Current gain
+disp(AI,'AI=');
+
+Ri=hie+(AI*hre*Rl); //input resistance in ohms
+disp('ohms',Ri,'Ri=');
+
+AVo=AI*Rl/(Rg+Ri); //Overall voltage gain including source resistance
+disp(AVo,'AVo=');
+
+APo=AVo*AI; //Overall voltage gain including source resistance
+disp(APo,'APo=');
diff --git a/2300/CH8/EX8.14.6/Ex8_6.sce b/2300/CH8/EX8.14.6/Ex8_6.sce new file mode 100755 index 000000000..0c2d397ff --- /dev/null +++ b/2300/CH8/EX8.14.6/Ex8_6.sce @@ -0,0 +1,28 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 8:Junction Transistors:Biasing and Amplification
+clc;
+clear;
+//given data
+hoe=25*10^-6; //h parameter in A/V
+hie=4000; //h paramater in ohms
+hfe=135; //h paramater of transistor
+hre=7*10^-4; //h paramater of transistor
+Re=100; //emitter resistance in ohms
+Rl=3*10^3; //Load resistance in ohms
+
+//Here hoe*Rl is less than 0.1. So we can simplify the circuit and according to it the current gain is AI=Ic/Ib. here Ic=-hfe*Ib.
+
+AI=-hfe; //current gain
+disp(AI,'AI=');
+
+Ri=hie+(1+hfe)*Re; //input resistance in ohms
+disp('kilo ohms',Ri*10^-3,'Ri=');
+
+AV=AI*Rl/Ri; //voltage gain
+disp(AV,'AV=');
+
+disp("The output resistance of the transistor excluding RL is infinite.")
+disp("kilo ohm",Rl/10^3,"The output resistance of the transistor including RL is =.")
+
diff --git a/2300/CH8/EX8.14.7/Ex8_7.sce b/2300/CH8/EX8.14.7/Ex8_7.sce new file mode 100755 index 000000000..14b15548a --- /dev/null +++ b/2300/CH8/EX8.14.7/Ex8_7.sce @@ -0,0 +1,41 @@ +
+//scilab 5.4.1
+//windows 7 operating system
+//chapter 8:Junction Transistors:Biasing and Amplification
+clc;
+clear;
+//given data
+
+hfe=100; //h parameter of transistor
+hie=560; //h parameter of transistor in ohms
+Rc=2*10^3; //collector resistance in ohms
+Re=10^3; //emitter resistance in ohms
+Rb=600*10^3; //Base resistance in ohms
+
+//Since hoe is neglected we can use the simplified equivalent circuit hence the Ri is
+
+Ri=hie+(1+hfe)*Re; //Input resistance in ohms
+disp('kilo ohms',Ri*10^-3,'Ri=');
+
+Rib=(Ri*Rb)/(Ri+Rb); //Input resistance including Rb in ohms
+disp('kilo ohms',Rib*10^-3,'Input resistance (including Rb)=');
+
+disp("The output resistance excluding load is infinita")
+Ro=Rc;
+disp("kilo ohms",Ro*10^-3,"Output resistance including load =")
+
+AV=-(hfe*Ro)/(hie+((1+hfe)*Re)); //voltage gain
+disp(AV,'AV=');
+disp("Small signals are used,since otherwise the output waveform will be distorted.Also,the equivalent circuit will not hold.")
+
+//Taking DC emitter current and collector current nearly equal
+
+Ib=20/(Rb+Re*101); //base current in mA
+disp('mA',Ib*10^3,'Ib=');
+
+disp("The Q-point is defined by")
+Ic=hfe*Ib; //collector current in mA
+disp('mA',Ic*10^3,'Ic=');
+
+VCE=20-(3*Ic*10^3)
+disp('V',VCE,'VCE=');
diff --git a/2300/CH8/EX8.14.8/Ex8_8.sce b/2300/CH8/EX8.14.8/Ex8_8.sce new file mode 100755 index 000000000..ab8489f7b --- /dev/null +++ b/2300/CH8/EX8.14.8/Ex8_8.sce @@ -0,0 +1,67 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 8 Junction Transistors:Biasing and Amplification
+clc
+clear
+//For a CE transistor amplifier circuit with self-bias
+f=1000//f=frequency in Hz
+AV=-200//AV=voltage gain
+hfe=100//hfe=current gain
+hie=1//hie=input impedance in kilo ohms
+Pcmax=75*10^-3//Pcmax=maximum collector dissipation in Watt
+//hre and hoe are to be neglected
+VCC=12//VCC=collector supply voltage
+//AV=-(hfe*RL)/hie where RL is the load resistance
+RL=-(AV*hie)/hfe
+format("v",5)
+disp("The designed values of the components of a CE transistor amplifier are:")
+disp("kilo ohm",RL,"The load resistance RL is =")
+//For the amplifier to be linear,the quiescent point is chosen to lie in the middle of the DC load line
+VCG=VCC/2 //VCG=DC collector to ground voltage
+//VCC=(IC*RL)+VCG where IC=DC collector current
+IC=(VCC-VCG)/RL
+format("v",5)
+disp("mA",IC,"Ihe DC collector current is =")
+Pr=(IC^2)*RL//Pr=power dissipation in RL
+//Pc=the collector dissipation is set at 14.5 mW which is below the value of Pcmax
+//Pc=VCE*IC
+Pc=14.5
+VCE=Pc/IC//VCE=collector-to-emitter voltage drop
+format("v",4)
+VEG=VCG-VCE//VEG=DC voltage drop across resistance Re
+IE=IC//IE=emitter current
+Re=VEG/(IC)
+disp("ohm",Re*1000,"The resistance Re is =")//Re is converted in terms of ohms
+Pe=(IC^2)*Re//Pe=power dissipation in Re
+VBE=0.7//VBE=assumed DC base-to-emitter voltage drop
+VBG=VBE+(IE*Re)//VBG=DC voltage across resistance R2
+//VT=(VCC*R2)/(R1+R2) where VT=Thevenin equivalent voltage
+//RT=(R1*R2)/(R1+R2).............(1) where RT=Thevenin equivalent resistance
+//VBG=VT-(IB*RT)
+//VBG=((VCC*R2)/(R1+R2))-(IB*((R1*R2)/(R1+R2)))..................(2)
+//Let (R2/(R1+R2))=x ..............(3)
+x=VBG/VCC//neglecting the second term on the right hand side of equation (2)
+a=(1-x)/x //a=R1/R2
+//S=((1+b)*(1+RT/Re))/(1+b+(RT/Re)) where S=stability factor and b=current gain=hfe
+//b>>1 hence S=(hfe*(1+RT/Re))/(1+b+(RT/Re))
+//For good stability we choose S=hfe/20
+RT=((hfe-20)/19)*Re
+R1=RT/x//from equation (1) and (3)
+format("v",5)
+disp("kilo ohm",R1,"The resistance R1 is=")
+R2=R1/5.33
+format("v",4)
+disp("kilo ohm",R2,"The resistance R2 is =")
+Pr2=(VBG^2)/R2//Pr2=power dissipation in R2
+Pr1=((VCC-VBG)^2)/R1 //Pr1=power dissipation in R1
+Ce=1/(2*%pi*f*((Re*1000)/10))//Ce=bypass capacitor
+format("v",2)
+disp("micro farad",Ce/10^-6,"The bypass capacitance Ce is =")//Ce is converted in terms of micro farad
+C1=2/(2*%pi*f*100)//C1=coupling capacitor
+format("v",4)
+disp("micro farad",C1/10^-6,"The coupling capacitance C1 is =")//C1 is converted in terms of micro farad
+Rin=20*1000//Rin=assumed input impedance in ohms
+C2=1/(2*%pi*f*0.1*Rin)//C2=coupling capacitor
+format("v",4)
+disp("micro farad",C2/10^-6,"The coupling capacitance C2 is =")//C2 is converted in terms of micro farad
+
diff --git a/2300/CH8/EX8.14.9/Ex8_9.sce b/2300/CH8/EX8.14.9/Ex8_9.sce new file mode 100755 index 000000000..a9c8fa68a --- /dev/null +++ b/2300/CH8/EX8.14.9/Ex8_9.sce @@ -0,0 +1,29 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 8 Junction Transistors:Biasing and Amplification
+clc
+clear
+VCC=12//VCC=collector supply voltage
+a=0.98//a=dc current gain of the common base transistor
+VBE=0.7//VBE=base emitter voltage
+IE=2//IE=emitter current in mA
+//Ico is to be neglected
+b=a/(1-a)//b=dc current gain of the common emitter transistor
+//IC=b*IB where IC=collector current and IB=base current
+//IE=IC+IB
+//IE=(b+1)*IB
+IB=IE/(b+1)
+IC=b*IB
+RE=0.1//RE=resistance in kilo ohms connected to the emitter terminal
+R2=20//R2=resistance in kilo ohms
+RC=3.3//RC=resistance in kilo ohms connected to the collector terminal
+//Let I be the current in the resistance R2
+//Applying Kirchhoff's voltage law in the base-emitter circuit
+//VBE+(RE*IE)=R2*I
+I=(1/R2)*(VBE+(RE*IE))
+//Applying Kirchhoff's voltage law
+//((I+IB+IC)*RC)+((I+IB)*R1)+(I*R2)=VCC
+R1=(VCC-((I+IB+IC)*RC)-(I*R2))/(I+IB)
+format("v",5)
+disp("kilo ohm",R1,"The resistance R1 is =")
+
diff --git a/2300/CH9/EX9.12.1/Ex9_1.sce b/2300/CH9/EX9.12.1/Ex9_1.sce new file mode 100755 index 000000000..af0fe3e9d --- /dev/null +++ b/2300/CH9/EX9.12.1/Ex9_1.sce @@ -0,0 +1,18 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 9 Basic Voltage and Power Amplifiers
+clc
+clear
+AVm=120//AVm=mid-band gain of an RC-coupled amplifier
+fm=100//fm=frequency in Hz corresponding to the mid-band gain
+AVl=60//AVl=reduced gain
+AVh=AVl
+f=100*10^3//f=frequency in Hz corresponding to the reduced gain
+//|AVl|=(|AVm|)/sqrt(1+(fl/fm)^2) where fl=lower half power frequency
+fl=sqrt((abs(AVm)/abs(AVl))^2 -1)*fm
+format("v",6)
+disp("Hz",fl,"The lower half-power frequency is =")
+//|AVh|=(|AVm|)/sqrt(1+(f/fh)^2) where fh=upper half power frequency
+fh=f/sqrt((abs(AVm)/abs(AVh))^2 -1)
+format("v",5)
+disp("kHz",fh/10^3,"The upper half-power frequency is =")//fh is converted in terms of kHz
diff --git a/2300/CH9/EX9.12.2/Ex9_2.sce b/2300/CH9/EX9.12.2/Ex9_2.sce new file mode 100755 index 000000000..6094dbf0d --- /dev/null +++ b/2300/CH9/EX9.12.2/Ex9_2.sce @@ -0,0 +1,22 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 9 Basic Voltage and Power Amplifiers
+clc
+clear
+//For two identical transistors employed by an RC-coupled amplifier
+hfe=100//hfe=current gain
+hie=2*10^3//hie=input impedance in ohm
+Cob=2*10^-12//Cob=capacitance in farad quoted by the transistor manufacturers
+C=0.4*10^-6//C=coupling capacitance in farad
+RL=8*10^3//RL=load resistance in ohms for each transistor
+CW=10*10^-12//CW=wiring capacitance in farad
+fl=1/(2*%pi*C*(hie+RL))//fl=lower half power frequency
+format("v",5)
+disp("Hz",fl,"The lower half-power frequency is =")
+hfb=-hfe/(1+hfe)//hfb=current gain for common base transistor
+Coc=Cob/(1+hfb)//Coc=transistor collector capacitance in farad
+Cs=Coc+CW//Cs=shunt capacitance in farad
+Ro=(hie*RL)/(hie+RL)//Ro=equivalent resistance of the parallel combination of hie and RL
+fh=1/(2*%pi*Cs*Ro)//fh=upper half power frequency
+format("v",5)
+disp("kHz",fh/10^3,"The upper half-power frequency is =")//fh is converted in terms of kHz
diff --git a/2300/CH9/EX9.12.3/Ex9_3.sce b/2300/CH9/EX9.12.3/Ex9_3.sce new file mode 100755 index 000000000..7ee178b02 --- /dev/null +++ b/2300/CH9/EX9.12.3/Ex9_3.sce @@ -0,0 +1,33 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 9 Basic Voltage and Power Amplifiers
+clc
+clear
+//AVm=mid-band gain of an RC-coupled amplifier
+fm=60//fm=frequency in Hz corresponding to the mid-band gain
+//AVl=reduced gain
+//AVh=AVl
+f=600*10^3//f=frequency in Hz corresponding to the reduced gain
+fl=30//fl=The lower half-power frequency in Hz
+fh=300*10^3//fh=The upper half-power frequency in Hz
+//|AVl|=(|AVm|)/sqrt(1+(fl/fm)^2)
+//Suppose (AVl/AVm)=a=low frequency gain with respect to the mid frequency gain
+//a=1/sqrt(1+(fl/fm)^2)//a=magnitude of the low frequency gain
+a=1/sqrt(1+(fl/fm)^2)
+format("v",5)
+o=atand(fl/fm)//o=phase angle in degree of the low frequency gain
+format("v",5)
+disp("For the low frequency gain with respect to the mid frequency gain ")
+disp(a,"Magnitude=")
+disp("degree",o,"Phase angle=")
+//|AVh|=(|AVm|)/sqrt(1+(f/fh)^2)
+//Suppose (AVh/AVm)=b=high frequency gain with respect to the mid frequency gain
+//b=1/sqrt(1+(f/fh)^2)//b=magnitude of the high frequency gain
+b=1/sqrt(1+(f/fh)^2)
+format("v",6)
+O=-atand(f/fh)//O=phase angle in degree of the high frequency gain
+format("v",6)
+disp("For the high frequency gain with respect to the mid frequency gain ")
+disp(b,"Magnitude=")
+disp("degree",O,"Phase angle=")
+
diff --git a/2300/CH9/EX9.12.4/Ex9_4.sce b/2300/CH9/EX9.12.4/Ex9_4.sce new file mode 100755 index 000000000..84b354714 --- /dev/null +++ b/2300/CH9/EX9.12.4/Ex9_4.sce @@ -0,0 +1,15 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 9 Basic Voltage and Power Amplifiers
+clc
+clear
+//In a CE class A power amplifier
+RL=12//RL=load resistance in ohms
+n=8//n=primary-to-secondary turns ratio of a transformer
+//Peak-to-peak swing of the signal current is 250mA
+Im=(250*10^-3)/2//Im=ac collector current in Ampere
+RL1=(n^2)*RL//RL1=RL'=resistance reflected to the primary for the resistance RL in presence of an ac signal
+//Pac=(1/2)*Vm*Im where Pac=ac output power
+//Pac=(1/2)*(Im^2)*RL1
+Pac=(1/2)*(Im^2)*RL1
+disp("W",Pac,"The output power is =")
diff --git a/2300/CH9/EX9.12.5/Ex9_5.sce b/2300/CH9/EX9.12.5/Ex9_5.sce new file mode 100755 index 000000000..aef21cb55 --- /dev/null +++ b/2300/CH9/EX9.12.5/Ex9_5.sce @@ -0,0 +1,20 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 9 Basic Voltage and Power Amplifiers
+clc
+clear
+VCQ=6//VCQ=quiescent collector voltage
+ICQ=50*10^-3//ICQ=quiescent collector current
+VCmin=1
+VCmax=11//VCmin,VCmax=output signal voltage variation
+ICmin=10*10^-3
+ICmax=90*10^-3//ICmin,ICmax=output signal current variation in Ampere
+Ps=VCQ*ICQ//Ps=dc input power to the transistor
+disp("W",Ps,"The dc input power is =")
+Pac=(1/8)*(ICmax-ICmin)*(VCmax-VCmin)//Pac=ac output power delivered to the load
+disp("W",Pac,"The ac output power is =")
+PT=(VCQ*ICQ)-Pac//PT=the collector dissipation
+disp("W",PT,"The collector dissipation is =")
+n=(Pac/Ps)*100//n=the efficiency of the active device
+format("v",5)
+disp("%",n,"The efficiency is =")
diff --git a/2300/CH9/EX9.12.6/Ex9_6.sce b/2300/CH9/EX9.12.6/Ex9_6.sce new file mode 100755 index 000000000..1d47fcb8c --- /dev/null +++ b/2300/CH9/EX9.12.6/Ex9_6.sce @@ -0,0 +1,20 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 9 Basic Voltage and Power Amplifiers
+clc
+clear
+//In a class B push pull circuit
+//Transformer winding resistances are to be ignored
+n=3//n=primary-to-secondary turns ratio of a transformer
+RL=9//RL=load resistance in ohms
+VCC=15//VCC=collector supply voltage
+RL1=((n/2)^2)*RL//RL1=reflected load resistance for one transistor
+Pactot=(VCC^2)/(2*RL1)//Pactot=maximum output power
+format("v",5)
+disp("W",Pactot,"The maximum output power is =")
+Pstot=(2*VCC^2)/(%pi*RL1)//Pstot=the maximum dc power supplied to the two transistors
+format("v",5)
+disp("W",Pstot,"The maximum dc power supplied is =")
+n=(Pactot/Pstot)*100//n=efficiency
+format("v",5)
+disp("%",n,"The efficiency is =")
diff --git a/2300/CH9/EX9.12.7/Ex9_7.sce b/2300/CH9/EX9.12.7/Ex9_7.sce new file mode 100755 index 000000000..9c5dfcf88 --- /dev/null +++ b/2300/CH9/EX9.12.7/Ex9_7.sce @@ -0,0 +1,26 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 9 Basic Voltage and Power Amplifiers
+clc
+clear
+//In a single tuned amplifier
+L=120*10^-6//L=inductance in henry
+C=100*10^-12//C=capacitance in farad
+R=10//R=resistance in ohms
+hoe=50*10^-6//hoe=output impedance in mho(or S)
+hfe=100//hfe=current gain
+hie=2.5*10^3//hie=input impedance in ohm
+RT=10*10^3//RT=equivalent resistance of RB and Ri in parallel
+fo=1/(2*%pi*sqrt(L*C))//fo=resonant frequency
+format("v",5)
+disp("MHz",fo/10^6,"The resonant frequency is =")//fo is converted in terms of MHz
+Qo=(1/R)*sqrt(L/C)//Qo=Q-factor of the resonant frequency
+Ro=(Qo^2)*R//Ro=maximum impedance Zm
+Rp=1/(hoe+(1/Ro)+(1/RT))//Rp=equivalent resistance of the parallel combination of Ro,ro and RT
+Qe=(Qo*Rp)/Ro//Qe=effective Q-factor
+B=fo/Qe//B=bandwidth
+format("v",6)
+disp("kHz",B/10^3,"The bandwidth is =")//B is converted in terms of kHz
+AVm=-(hfe*Rp)/hie//AVm=maximum voltage gain
+format("v",6)
+disp(AVm,"The maximum voltage gain is =")
diff --git a/2300/CH9/EX9.12.8/Ex9_8.sce b/2300/CH9/EX9.12.8/Ex9_8.sce new file mode 100755 index 000000000..053488844 --- /dev/null +++ b/2300/CH9/EX9.12.8/Ex9_8.sce @@ -0,0 +1,14 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 9 Basic Voltage and Power Amplifiers
+clc
+clear
+V=10//V=voltage at frequency 5kHz
+Vr=7.07//Vr=voltage at frequency 25kHz
+//x=10*log10(P/Pr) where x=change in decibel(dB) of power P from some standard power Pr
+//P=V^2/R=I^2*R
+//Also Pr=Vr^2/R=Ir^2*R
+//x=10*(log10(V/Vr))^2=20*log10(V/Vr)
+x=20*log10(V/Vr)//x=change in decibel(dB) of voltage V from some standard voltage Vr
+format("v",4)
+disp("dB",x,"The decibel change in the output power level is =")
diff --git a/2300/CH9/EX9.12.9/Ex9_9.sce b/2300/CH9/EX9.12.9/Ex9_9.sce new file mode 100755 index 000000000..50130ecba --- /dev/null +++ b/2300/CH9/EX9.12.9/Ex9_9.sce @@ -0,0 +1,22 @@ +//scilab 5.4.1
+//Windows 7 operating system
+//chapter 9 Basic Voltage and Power Amplifiers
+clc
+clear
+Vorms=2//Vorms=rms output voltage in the midband region of an amplifier
+Pa=42//Pa=power gain in dB
+Pol=0.4//Pol=power output in W at the lower cut-off frequency 100Hz
+Ri=10^3//Ri=input resistance in ohms
+VOrms=2/sqrt(2)//VOrms=rms output voltage at 100Hz
+format("v",6)
+disp("V",VOrms,"1. The rms output voltage at 100Hz,which is the lower cutoff frequency,is =")
+Po=2*Pol//Po=output power in the midband region
+disp("W",Po,"2. The output power in the midband region is =")
+//Let Pi=input power
+//10*log10(Po/Pi)=Pa
+Pi=Po/(10^(Pa/10))
+//Pi=(Vi^2)/Ri where Vi=rms input voltage
+Vi=sqrt(Pi*Ri)
+format("v",7)
+disp("V",Vi,"3. The rms input voltage is =")
+
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