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+//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+//For n-channel MOSFET operating in the depletion mode
+VDD=18//VDD=drain supply voltage
+VGS=0//VGS=gate-to-source voltage
+RL=600//RL=load resistance in ohms
+IDSS=18//IDSS=drain saturation current in mA for gate-to-source voltage (VGS)=0V
+Vp=-5//Vp=pinch-off voltage
+//Assuming that the operation is in the active region
+//ID=IDS=IDSS*(1-(VGS/Vp))^2
+//ID=(IDSS/Vp^2)(VGS-Vp)^2
+K=IDSS/(Vp^2)
+disp("mA/V^2",K,"The value of K is =")
+ID=IDSS//ID=drain current 
+disp("mA",ID,"Since VGS=0,the value of ID=IDSS is=")
+VDS=VDD-(ID*(RL/10^3))//VDS=drain-to-source voltage and also converting RL in terms of kilo ohm
+disp("V",VDS,"The value of VDS is =")
+disp("V",Vp,"Pinch off voltage Vp is =")
+disp("V",VGS,"Gate to source voltage VGS is =")
+if (VDS>(VGS-Vp)) then
+    disp("As VDS>(VGS-Vp),(i.e.7.5>(0-(-5))),the MOSFET is actually in the active region ")
+end
+