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+//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+ND=2*10^21//ND=donor concentration in m^-3 of an n-channel silicon JFET
+e=1.6*10^-19//e=charge of an electron
+E=12*8.854*10^-12//E=permittivity of the material where 12=dielectric constant of silicon(given)
+a=(4*10^-6)/2//2*a=channel width in metres and 2*a=4*10^-6
+Vp=(e*ND*(a^2))/(2*E)
+format("v",5)
+disp("V",Vp,"The pinch-off voltage is =")
+VGS=-2//VGS=gate source voltage
+//Vp=VDsat-VGS where VDsat=saturation voltage
+VDsat=Vp+VGS
+format("v",5)
+disp("V",VDsat,"The saturation voltage is =")