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+//scilab 5.4.1
+//Windows 7 operating system
+//chapter 13 Field-Effect Transistors
+clc
+clear
+IDSS=10*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V
+Vp=-5//Vp=pinch-off voltage
+VDD=24//VDD=drain supply voltage
+VDS=8//VDS=drain-to-source voltage
+ID=4*10^-3//ID=drain current in Ampere
+R1=2*10^6//R1=resistance in the voltage divider network in ohms
+R2=1*10^6//R2=resistance in the voltage divider network in ohms
+VT=(R2/(R1+R2))*VDD//VT=Thevenin voltage
+//By Shockley's equation
+//ID=IDS=IDSS*(1-(VGS/Vp))^2
+VGS=Vp*(1-sqrt(ID/IDSS))//VGS=gate-to-source voltage
+//VGS=VT-(ID*Rs) where Rs=resistance connected at the source terminal
+Rs=(VT-VGS)/ID
+disp("kilo ohm",Rs/10^3,"The value of Rs =")//converting Rs in terms of kilo-ohm
+Rch=VDS/ID//Rch=channel resistance at the Q-point
+disp("kilo ohm",Rch/10^3,"The channel resistance at the Q-point is=")//converting Rch in terms of kilo-ohm