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authorprashantsinalkar2017-10-10 12:27:19 +0530
committerprashantsinalkar2017-10-10 12:27:19 +0530
commit7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch)
treedbb9e3ddb5fc829e7c5c7e6be99b2c4ba356132c /3636/CH5
parentb1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff)
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Diffstat (limited to '3636/CH5')
-rw-r--r--3636/CH5/EX5.1/Ex5_1.sce21
-rw-r--r--3636/CH5/EX5.1/Ex5_1.txt3
-rw-r--r--3636/CH5/EX5.10/Ex5_10.sce13
-rw-r--r--3636/CH5/EX5.10/Ex5_10.txt1
-rw-r--r--3636/CH5/EX5.11/Ex5_11.sce20
-rw-r--r--3636/CH5/EX5.11/Ex5_11.txt2
-rw-r--r--3636/CH5/EX5.2/Ex5_2.sce11
-rw-r--r--3636/CH5/EX5.2/Ex5_2.txt1
-rw-r--r--3636/CH5/EX5.3/Ex5_3.sce14
-rw-r--r--3636/CH5/EX5.3/Ex5_3.txt1
-rw-r--r--3636/CH5/EX5.4/Ex5_4.sce15
-rw-r--r--3636/CH5/EX5.4/Ex5_4.txt1
-rw-r--r--3636/CH5/EX5.5/Ex5_5.sce18
-rw-r--r--3636/CH5/EX5.5/Ex5_5.txt2
-rw-r--r--3636/CH5/EX5.7/Ex5_7.sce12
-rw-r--r--3636/CH5/EX5.7/Ex5_7.txt1
-rw-r--r--3636/CH5/EX5.8/Ex5_8.sce13
-rw-r--r--3636/CH5/EX5.8/Ex5_8.txt2
-rw-r--r--3636/CH5/EX5.9/Ex5_9.sce26
-rw-r--r--3636/CH5/EX5.9/Ex5_9.txt4
20 files changed, 181 insertions, 0 deletions
diff --git a/3636/CH5/EX5.1/Ex5_1.sce b/3636/CH5/EX5.1/Ex5_1.sce
new file mode 100644
index 000000000..d77bb0f84
--- /dev/null
+++ b/3636/CH5/EX5.1/Ex5_1.sce
@@ -0,0 +1,21 @@
+clc;
+clear;
+rho=10 //resistivity in ohm-cm
+myu_n=1300 //electron mobility in cm^2/V*s
+e=1.6*10^-19 //in eV
+Cs=5*10^18 //constant surface concentartion in cm^-3
+t=1 //in hour
+x=1 //depth in micro-m
+
+//Calculation
+sigma=1/rho //in (ohm-cm)^-1
+n=sigma/(myu_n*e) //in cm^-3
+n_Cs=n/Cs
+erfc1_y=n_Cs //error function
+y=2.75 //reference page 181 from fig 5.1.1. value obtained by plotting erfc1_y (Complementary error function) as a function of y
+rootD=x/(2*y*sqrt(t))
+T=1100 //reference page 168 from fig 5.10(b)
+
+mprintf("rootD = %.2f micro-m/h^-2\n",rootD)
+mprintf("Temperature at diffusion should be carried out= %i Celsius\n",T)
+mprintf("The temperature value was choosen by determing the value of T against root(D) in the figure of Diffusivity of acceptor impurities in silicon versus T")
diff --git a/3636/CH5/EX5.1/Ex5_1.txt b/3636/CH5/EX5.1/Ex5_1.txt
new file mode 100644
index 000000000..028d3a6e7
--- /dev/null
+++ b/3636/CH5/EX5.1/Ex5_1.txt
@@ -0,0 +1,3 @@
+ rootD = 0.18 micro-m/h^-2
+Temperature at diffusion should be carried out= 1100 Celsius
+The temperature value was choosen by determing the value of T agains root(D) in the figure of Diffusivity of acceptor impurities in silicon versus T \ No newline at end of file
diff --git a/3636/CH5/EX5.10/Ex5_10.sce b/3636/CH5/EX5.10/Ex5_10.sce
new file mode 100644
index 000000000..a96d6f675
--- /dev/null
+++ b/3636/CH5/EX5.10/Ex5_10.sce
@@ -0,0 +1,13 @@
+clc;
+clear;
+Cj=12*10^-12 //Capacitance in F/cm^2
+A=10^-4 //junction Area in A/cm^2
+Vr=20 //in V
+e=1.6*10^-19 //in J
+epsilon_r=11.8 //in F/cm
+epsilon_0=8.85*10^-14 //in F/cm
+
+//Calculation
+Nd=((2*Cj)/A)^2*(Vr/(2*epsilon_r*epsilon_0*e))
+
+mprintf("Donor Concentration= %1.3e cm^-3",Nd)
diff --git a/3636/CH5/EX5.10/Ex5_10.txt b/3636/CH5/EX5.10/Ex5_10.txt
new file mode 100644
index 000000000..3d9fdb555
--- /dev/null
+++ b/3636/CH5/EX5.10/Ex5_10.txt
@@ -0,0 +1 @@
+ Donor Concentration= 3.447e+18 cm^-3 \ No newline at end of file
diff --git a/3636/CH5/EX5.11/Ex5_11.sce b/3636/CH5/EX5.11/Ex5_11.sce
new file mode 100644
index 000000000..e89c74e33
--- /dev/null
+++ b/3636/CH5/EX5.11/Ex5_11.sce
@@ -0,0 +1,20 @@
+clc;
+clear;
+Na=4.22*10^14 //doping densities in cm^-3
+Nd=4.22*10^16 //in cm^3
+e=1.6*10^-19 //in eV
+Vbi=0.65 //breakdown voltage in V
+ni=1.5*10^10 //in cm^-3
+epsilon_si=11.7 //in F/cm
+epsilon_0=8.85*10^-14 //in F/cm
+V=10 //applied voltage in V
+Const=0.0259 //value for kT/e in V
+
+//Calculation
+Nd=sqrt((exp(Vbi/Const)*ni^2)/100)
+Na=100*Nd
+W=(((2*epsilon_0*epsilon_si*(Vbi+V))*(Na+Nd))/(e*Na*Nd))^0.5
+Cj=(epsilon_0*epsilon_si)/W
+
+mprintf("Depletion capacitance per unit area= %1.3e F/cm^2\n",Cj) //The answers vary due to round off error
+mprintf("Width of depletion region= %1.2e cm",W) //The answers vary due to round off error
diff --git a/3636/CH5/EX5.11/Ex5_11.txt b/3636/CH5/EX5.11/Ex5_11.txt
new file mode 100644
index 000000000..3fa884d8b
--- /dev/null
+++ b/3636/CH5/EX5.11/Ex5_11.txt
@@ -0,0 +1,2 @@
+ Depletion capacitance per unit area= 1.804e-09 F/cm^2
+Width of depletion region= 5.74e-04 cm \ No newline at end of file
diff --git a/3636/CH5/EX5.2/Ex5_2.sce b/3636/CH5/EX5.2/Ex5_2.sce
new file mode 100644
index 000000000..b138df010
--- /dev/null
+++ b/3636/CH5/EX5.2/Ex5_2.sce
@@ -0,0 +1,11 @@
+clc;
+clear;
+Na=5*10^18 //doping densities in cm^-3
+Nd=5*10^15 //in cm^-3
+ni=1.5*10^10 //in cm^-3
+Const=0.026//constant for kT/e in V
+
+//Calculation
+Vbi=Const*log((Na*Nd)/ni^2)
+
+mprintf("built-in potential= %0.3f V",Vbi) //The answers vary due to round off error
diff --git a/3636/CH5/EX5.2/Ex5_2.txt b/3636/CH5/EX5.2/Ex5_2.txt
new file mode 100644
index 000000000..27f1c52b7
--- /dev/null
+++ b/3636/CH5/EX5.2/Ex5_2.txt
@@ -0,0 +1 @@
+ built-in potential= 0.841 V \ No newline at end of file
diff --git a/3636/CH5/EX5.3/Ex5_3.sce b/3636/CH5/EX5.3/Ex5_3.sce
new file mode 100644
index 000000000..38dd2fddb
--- /dev/null
+++ b/3636/CH5/EX5.3/Ex5_3.sce
@@ -0,0 +1,14 @@
+clc;
+clear;
+Na=5*10^18 //doping densities in cm^-3
+Nd=5*10^15 //in cm^-3
+ni=1.5*10^10 //in cm^-3
+epsilon_s=11.7 //in F/cm
+epsilon_0=8.85*10^-14 //in F/cm
+Vbi=0.838 //built-in potential in V
+e=1.6*10^-19 //in J
+
+//Calculation
+W=((2*epsilon_s*epsilon_0*Vbi*(Na+Nd))/(e*Na*Nd))^0.5
+
+mprintf("Total space-charge width= %0.2e m",W)
diff --git a/3636/CH5/EX5.3/Ex5_3.txt b/3636/CH5/EX5.3/Ex5_3.txt
new file mode 100644
index 000000000..45d416838
--- /dev/null
+++ b/3636/CH5/EX5.3/Ex5_3.txt
@@ -0,0 +1 @@
+ Total space-charge width= 4.66e-05 m \ No newline at end of file
diff --git a/3636/CH5/EX5.4/Ex5_4.sce b/3636/CH5/EX5.4/Ex5_4.sce
new file mode 100644
index 000000000..f0c6e42a9
--- /dev/null
+++ b/3636/CH5/EX5.4/Ex5_4.sce
@@ -0,0 +1,15 @@
+clc;
+clear;
+Na=5*10^18 //doping densities in cm^-3
+Nd=5*10^15 //in cm^-3
+ni=1.5*10^10 //in cm^-3
+VR=4 //voltage in V
+epsilon_s=11.7 //in F/cm
+epsilon_0=8.85*10^-14 //in F/cm
+Vbi=0.838 //built-in potential in V
+e=1.6*10^-19 //in J
+
+//Calculation
+W=((2*epsilon_s*epsilon_0*(Vbi+VR)*(Na+Nd))/(e*Na*Nd))^0.5
+
+mprintf("Total space-charge width= %1.2e cm",W)
diff --git a/3636/CH5/EX5.4/Ex5_4.txt b/3636/CH5/EX5.4/Ex5_4.txt
new file mode 100644
index 000000000..ad55f2430
--- /dev/null
+++ b/3636/CH5/EX5.4/Ex5_4.txt
@@ -0,0 +1 @@
+ Total space-charge width= 1.12e-04 cm \ No newline at end of file
diff --git a/3636/CH5/EX5.5/Ex5_5.sce b/3636/CH5/EX5.5/Ex5_5.sce
new file mode 100644
index 000000000..3f51676da
--- /dev/null
+++ b/3636/CH5/EX5.5/Ex5_5.sce
@@ -0,0 +1,18 @@
+clc;
+clear;
+Na=5*10^18 //doping densities in cm^-3
+Nd=5*10^15 //in cm^-3
+ni=1.5*10^10 //in cm^-3
+VR=3 //voltage in V
+epsilon_s=11.7 //in F/cm
+epsilon_0=8.85*10^-14 //in F/cm
+Vbi=0.838 //built-in potential in V
+e=1.6*10^-19 //in J
+A=5*10^-4 //Area in cm^2
+
+//Calculation
+Cdep=((e*epsilon_s*epsilon_0*Na*Nd)/(2*(Vbi+VR)*(Na+Nd)))^0.5 //junction capacitance
+Cdep1=Cdep*A
+
+mprintf("Junction Capacitance= %.0g F/cm^2\n",Cdep)
+mprintf("Depletion Capacitance= %.0g F",Cdep1)
diff --git a/3636/CH5/EX5.5/Ex5_5.txt b/3636/CH5/EX5.5/Ex5_5.txt
new file mode 100644
index 000000000..dc7d42947
--- /dev/null
+++ b/3636/CH5/EX5.5/Ex5_5.txt
@@ -0,0 +1,2 @@
+ Junction Capacitance= 1e-08 F/cm^2
+Depletion Capacitance= 5e-12 F \ No newline at end of file
diff --git a/3636/CH5/EX5.7/Ex5_7.sce b/3636/CH5/EX5.7/Ex5_7.sce
new file mode 100644
index 000000000..9a5562200
--- /dev/null
+++ b/3636/CH5/EX5.7/Ex5_7.sce
@@ -0,0 +1,12 @@
+clc;
+clear;
+Na=10^17 //in cm^-3
+epsilon_0=8.85*10^-14 //in F/cm
+Emax=5*10^5 //peak electric field in V/cm
+e=1.6*10^-19 //in J
+epsilon_si=88.76*10^-14 //in F/cm
+
+//Calculation
+E=(Emax*Emax*epsilon_si)/(e*Na)
+
+mprintf("Breakdown voltage= %2.2f V",E) //The answers vary due to round off error
diff --git a/3636/CH5/EX5.7/Ex5_7.txt b/3636/CH5/EX5.7/Ex5_7.txt
new file mode 100644
index 000000000..cbb4b8e38
--- /dev/null
+++ b/3636/CH5/EX5.7/Ex5_7.txt
@@ -0,0 +1 @@
+ Breakdown voltage= 13.87 V \ No newline at end of file
diff --git a/3636/CH5/EX5.8/Ex5_8.sce b/3636/CH5/EX5.8/Ex5_8.sce
new file mode 100644
index 000000000..37b47d278
--- /dev/null
+++ b/3636/CH5/EX5.8/Ex5_8.sce
@@ -0,0 +1,13 @@
+clc;
+clear;
+Na=10^19 //doping densities in cm^-3
+Nd=10^15 //in cm^-3
+epsilon_s=88.76*10^-14 //in F/cm
+e=1.6*10^-19 //in J
+Vbi=300 //breakdown voltage in V
+
+//Calculation
+xn=((2*epsilon_s*Na*Vbi)/(e*Nd*(Na+Nd)))^0.5
+
+mprintf("a)\n")
+mprintf(" As %.4e cm is less than the given length of the n-region i.e 22 micro-m, device will only have avalanche breakdown",xn)
diff --git a/3636/CH5/EX5.8/Ex5_8.txt b/3636/CH5/EX5.8/Ex5_8.txt
new file mode 100644
index 000000000..2faba222d
--- /dev/null
+++ b/3636/CH5/EX5.8/Ex5_8.txt
@@ -0,0 +1,2 @@
+ a)
+ As 1.8243e-03 cm is less than the given length of the n-region i.e 22 micro-m, device will only have avalanche breakdown \ No newline at end of file
diff --git a/3636/CH5/EX5.9/Ex5_9.sce b/3636/CH5/EX5.9/Ex5_9.sce
new file mode 100644
index 000000000..b2836059f
--- /dev/null
+++ b/3636/CH5/EX5.9/Ex5_9.sce
@@ -0,0 +1,26 @@
+clc;
+clear;
+Na=10^15 //doping densities in cm^-3
+Nd=10^17 //in cm^-3
+V=0.5 //in V
+e=1.6*10^-19 //in J
+nn0=10^17 //in cm^-3
+ni=1.5*10^10 //in cm^-3
+Si_bandgap=1.1 //bandgap of silicon in eV
+Const=0.0259 //constant value for kT/e in J
+
+//Calculation
+//a)
+pn0=ni^2/nn0 //in cm^-3
+pn=pn0*exp((V)/Const)
+
+//b)
+
+Vbi=0.6949 //breakdown voltage in V
+Vp=Vbi-V //potential already present in V
+Vz=Si_bandgap-Vp //Zener breakdown voltage in V
+
+mprintf("a)\n")
+mprintf("Total concentration of holes= %.2e cm^-3\n",pn)
+mprintf("b)\n")
+mprintf("Additional voltage required= %.4f V",Vz)
diff --git a/3636/CH5/EX5.9/Ex5_9.txt b/3636/CH5/EX5.9/Ex5_9.txt
new file mode 100644
index 000000000..be6e7448a
--- /dev/null
+++ b/3636/CH5/EX5.9/Ex5_9.txt
@@ -0,0 +1,4 @@
+ a)
+Total concentration of holes= 5.45e+11 cm^-3
+b)
+Additional voltage required= 0.9051 V \ No newline at end of file
generated by cgit (git 2.34.1) at 2024-12-19 15:17:15 +0000