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Diffstat (limited to '3636/CH5/EX5.1/Ex5_1.sce')
| -rw-r--r-- | 3636/CH5/EX5.1/Ex5_1.sce | 21 |
1 files changed, 21 insertions, 0 deletions
diff --git a/3636/CH5/EX5.1/Ex5_1.sce b/3636/CH5/EX5.1/Ex5_1.sce new file mode 100644 index 000000000..d77bb0f84 --- /dev/null +++ b/3636/CH5/EX5.1/Ex5_1.sce @@ -0,0 +1,21 @@ +clc;
+clear;
+rho=10 //resistivity in ohm-cm
+myu_n=1300 //electron mobility in cm^2/V*s
+e=1.6*10^-19 //in eV
+Cs=5*10^18 //constant surface concentartion in cm^-3
+t=1 //in hour
+x=1 //depth in micro-m
+
+//Calculation
+sigma=1/rho //in (ohm-cm)^-1
+n=sigma/(myu_n*e) //in cm^-3
+n_Cs=n/Cs
+erfc1_y=n_Cs //error function
+y=2.75 //reference page 181 from fig 5.1.1. value obtained by plotting erfc1_y (Complementary error function) as a function of y
+rootD=x/(2*y*sqrt(t))
+T=1100 //reference page 168 from fig 5.10(b)
+
+mprintf("rootD = %.2f micro-m/h^-2\n",rootD)
+mprintf("Temperature at diffusion should be carried out= %i Celsius\n",T)
+mprintf("The temperature value was choosen by determing the value of T against root(D) in the figure of Diffusivity of acceptor impurities in silicon versus T")
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