initial commit / add all books

14 files changed, 273 insertions, 0 deletions

diff --git a/339/CH6/EX6.1/ex6_1.JPG b/339/CH6/EX6.1/ex6_1.JPG
new file mode 100755
index 000000000..1f0ed69f1
--- /dev/null
+++ b/339/CH6/EX6.1/ex6_1.JPG
diff --git a/339/CH6/EX6.1/ex6_1.sce b/339/CH6/EX6.1/ex6_1.sce
new file mode 100755
index 000000000..b44461fa8
--- /dev/null
+++ b/339/CH6/EX6.1/ex6_1.sce
@@ -0,0 +1,27 @@
+//define physical constants

+q=1.60218e-19;

+k=1.38066e-23;

+

+// define material properties

+Nc_300=[1.04e19 2.8e19  4.7e17];

+Nv_300=[6e18    1.04e19 7e18];

+mu_n=  [3900    1500    8500];

+mu_p=  [1900    450     400];

+Wg=    [0.66    1.12    1.424];

+

+T0=273;

+T=-50:250; // temperature range in centigrade

+

+sigma=zeros([3 length(T)]);

+

+for s=1:3 //loop through all semi conductor materials

+   Nc=Nc_300(s)*((T+T0)/300).^(3/2);

+   Nv=Nv_300(s)*((T+T0)/300).^(3/2);

+sigma=[q*sqrt(Nc.*Nv).*(exp(-Wg(s)./(2*k*(T+T0)/q)))*(mu_n(s)+mu_p(s))];

+end;

+

+plot(T,sigma(1),T,sigma(2),T,sigma(3));

+legend('Ge','Si','GaAs',2);

+title('Conductivity of semiconductor at different temperatures');

+xlabel('Temperature, {\circ}C');

+ylabel('Conductivity \sigma, \Omega^{-1}cm^{-1}');
\ No newline at end of file
diff --git a/339/CH6/EX6.10/ex6_10.JPG b/339/CH6/EX6.10/ex6_10.JPG
new file mode 100755
index 000000000..e081b0256
--- /dev/null
+++ b/339/CH6/EX6.10/ex6_10.JPG
diff --git a/339/CH6/EX6.10/ex6_10.sce b/339/CH6/EX6.10/ex6_10.sce
new file mode 100755
index 000000000..01833fc63
--- /dev/null
+++ b/339/CH6/EX6.10/ex6_10.sce
@@ -0,0 +1,81 @@
+//define problem parameters

+Nd=1e16*1e6;

+d=0.75e-6;

+W=10e-6;

+L=2e-6;

+eps_r=12;

+Vd=0.8;

+mu_n=8500*1e-4;

+lambda=0.03;

+

+//define physical constants

+q=1.60218e-19; //electron charge

+eps0=8.85e-12; //permittivity of free space

+

+eps=eps_r*eps0;

+

+// pinch-off voltage

+Vp=q*Nd*d^2/(2*eps)

+

+//threshold voltage

+Vt0=Vd-Vp

+

+//conductivity of the channel

+sigma=q*mu_n*Nd

+

+//channel conductance

+G0=q*sigma*Nd*W*d/L

+

+//define the range for gate source voltage

+Vgs_min=-2.5;

+Vgs_max=-1;

+Vgs=Vgs_max:-0.5:Vgs_min;

+

+//drain source voltage

+Vds=0:0.01:5;

+

+//compute drain saturation voltage

+Vds_sat=Vgs-Vt0;

+

+//first the drain current is taken into account the channel length modulation

+for n=1:length(Vgs)

+   if Vgs(n)>Vt0

+      Id_sat=G0*(Vp/3-(Vd-Vgs(n))+2/(3*sqrt(Vp))*(Vd-Vgs(n))^(3/2));

+   else

+      Id_sat=0;

+   end;

+   

+   Id_linear=G0*(Vds-2/(3*sqrt(Vp)).*((Vds+Vd-Vgs(n)).^(3/2)-(Vd-Vgs(n))^(3/2))).*(1+lambda*Vds);

+   Id_saturation=Id_sat*(1+lambda*Vds);

+   Id=Id_linear.*(Vds<=Vds_sat(n))+Id_saturation.*(Vds>Vds_sat(n));   

+   plot(Vds,Id);

+set(gca(),"auto_clear","off");

+end;

+

+//next the channel length modulation is not taken into account

+for n=1:length(Vgs)

+   if Vgs(n)>Vt0

+      Id_sat=G0*(Vp/3-(Vd-Vgs(n))+2/(3*sqrt(Vp))*(Vd-Vgs(n))^(3/2));

+   else

+      Id_sat=0;

+   end;

+   

+   Id_linear=G0*(Vds-2/(3*sqrt(Vp)).*((Vds+Vd-Vgs(n)).^(3/2)-(Vd-Vgs(n))^(3/2)));

+   Id_saturation=Id_sat;

+   Id=Id_linear.*(Vds<=Vds_sat(n))+Id_saturation.*(Vds>Vds_sat(n));   

+   plot(Vds, Id);

+end;

+

+//computation of drain saturation current

+

+Vgs=0:-0.01:-4;

+Vds_sat=Vgs-Vt0;

+

+Id_sat=G0*(Vp/3-(Vd-Vgs)+2/(3*sqrt(Vp))*(Vd-Vgs).^(3/2)).*(1+lambda*Vds_sat).*(1-(Vgs<Vt0));

+

+plot(Vds_sat, Id_sat);

+

+mtlb_axis([0 5 0 4]);

+title('Drain current vs. V_{DS} plotted for different V_{GS}');

+xlabel('Drain-source voltage V_{DS}, V');

+ylabel('Drain current I_{D}, A');
\ No newline at end of file
diff --git a/339/CH6/EX6.11/ex6_11.JPG b/339/CH6/EX6.11/ex6_11.JPG
new file mode 100755
index 000000000..3f8eebae6
--- /dev/null
+++ b/339/CH6/EX6.11/ex6_11.JPG
diff --git a/339/CH6/EX6.11/ex6_11.sce b/339/CH6/EX6.11/ex6_11.sce
new file mode 100755
index 000000000..22a522318
--- /dev/null
+++ b/339/CH6/EX6.11/ex6_11.sce
@@ -0,0 +1,42 @@
+//define problem parameters

+Nd=1e18*1e6;

+Vb=0.81;

+eps_r=12.5;

+d=50e-9;

+dWc=3.5e-20;

+W=10e-6;

+L=0.5e-6;

+mu_n=8500*1e-4;

+

+//define physical constants

+q=1.60218e-19;//electron charge

+eps0=8.85e-12;//permittivity of free space

+

+eps=eps_r*eps0;

+

+//pinch-off voltage

+Vp=q*Nd*d^2/(2*eps)

+

+//threshold voltage

+Vth=Vb-dWc/q-Vp

+

+//drain-source applied voltage range

+Vds=0:0.01:5;

+

+//gate-source voltages

+Vgs_r=-1:0.25:0;

+

+

+

+

+for n=1:length(Vgs_r)

+   Vgs=Vgs_r(n);

+   Id=mu_n*W*eps/(L*d)*((Vds*(Vgs-Vth)-Vds.*Vds/2).*(1-(Vds>(Vgs-Vth)))+1/2*(Vgs-Vth)^2*(1-(Vds<=(Vgs-Vth))));

+   plot(Vds,Id/1e-3);

+   set(gca(),"auto_clear","off");

+end;

+   

+

+title('Drain current vs. V_{DS} plotted for different V_{GS}');

+xlabel('Drain-source voltage V_{DS}, V');

+ylabel('Drain current I_{D}, mA');
\ No newline at end of file
diff --git a/339/CH6/EX6.2/ex6_2.sce b/339/CH6/EX6.2/ex6_2.sce
new file mode 100755
index 000000000..fb8d272e4
--- /dev/null
+++ b/339/CH6/EX6.2/ex6_2.sce
@@ -0,0 +1,11 @@
+// doping concentrations

+Na=1*10^18;

+Nd=5*10^15;

+//intrinsic concentrations

+ni=1.5*10^10;

+T=300;

+term=(Na*Nd)/(ni*ni);

+k=1.38*10^-23;

+q=1.6*10^-19;

+Vdiff=(k*T)*log(term)/q;

+disp("Volts",Vdiff,"Barrier voltage");
\ No newline at end of file
diff --git a/339/CH6/EX6.3/ex6_3.JPG b/339/CH6/EX6.3/ex6_3.JPG
new file mode 100755
index 000000000..3affece32
--- /dev/null
+++ b/339/CH6/EX6.3/ex6_3.JPG
diff --git a/339/CH6/EX6.3/ex6_3.sce b/339/CH6/EX6.3/ex6_3.sce
new file mode 100755
index 000000000..46f806973
--- /dev/null
+++ b/339/CH6/EX6.3/ex6_3.sce
@@ -0,0 +1,37 @@
+//define problem parameters

+

+ni=1.5e10*1e6; //intrinsic carrier concentration in Si [m^(-3)]

+Na=1e15*1e6; //acceptor doping concentration [m^(-3)]

+Nd=5e15*1e6; //donor concentration [m^(-3)]

+A=1e-4*1e-4; //cross sectional area [m^2]

+eps_r=11.9;  //cross sectional area [m^2]

+

+//define physical constants (SI units)

+q=1.60218e-19; //electron charge

+k=1.38066e-23; //Boltzmann's constant

+eps0=8.85e-12; //permittivity of free space

+

+eps=eps_r*eps0;

+

+T=300; //temperatuure

+

+//compute diffusion barrier voltage

+Vdiff=k*T/q*log(Na*Nd/ni^2)

+

+//junction capacitance at zero applied voltage

+C0=A*sqrt(q*eps/(1/Na+1/Nd)/2/Vdiff)

+

+//extents of the space charge region

+dn=sqrt(2*eps*Vdiff/q*Na/Nd/(Na+Nd));

+dp=sqrt(2*eps*Vdiff/q*Nd/Na/(Na+Nd));

+

+//define range for applied voltage

+VA=-5:0.1:Vdiff;

+

+//compute junction capacitance

+C=C0*(1-VA/Vdiff).^(-1/2);

+

+plot(VA,C/1e-12);

+title('Junction capacitance of abrupt Si pn-contact');

+xlabel('Applied junction voltage V_A, Volts');

+ylabel('Junction capacitance C, pF');

diff --git a/339/CH6/EX6.4/ex6_4.sce b/339/CH6/EX6.4/ex6_4.sce
new file mode 100755
index 000000000..437073e4f
--- /dev/null
+++ b/339/CH6/EX6.4/ex6_4.sce
@@ -0,0 +1,18 @@
+//doping concentrations

+Nc=2.8*10^19;

+Nd=1*10^16;

+term=Nc/Nd;

+k=1.38*10^-23; //Boltzman's constant

+q=1.6*10^-19; //charge

+Vc=(k*T)*log(term)/q;

+Vm=5.1; //workfunction

+X=4.05; //affinity

+Vd=(Vm-X)-Vc; //Barrier Voltage

+Epsilon=11.9*8.854*10^-12;

+ds=sqrt((2*Epsilon*Vd)/(q*Nd));

+A=1*10^-4; //cross-sectional area

+Cj=(A*Epsilon)/(ds); //junction capacitance

+disp("Volts",Vc,"Conduction Band potential");

+disp("Volts",Vd,"Built in Barrier Voltage");

+disp("metre",ds,"Space Charge Width");

+disp("Farads",Cj,"Junction Capacitance");
\ No newline at end of file
diff --git a/339/CH6/EX6.7/ex6_7.sce b/339/CH6/EX6.7/ex6_7.sce
new file mode 100755
index 000000000..e04698b35
--- /dev/null
+++ b/339/CH6/EX6.7/ex6_7.sce
@@ -0,0 +1,7 @@
+Ndemitter=1*10^19; // donor concentration in emitter

+Nabase=1*10^17; //acceptor concentration in base

+de=0.8*10^-6; //spatial extent of the emitter

+db=1.2*10^-6; //spatial extent of the base

+alpha=2.8125;

+beta=(alpha*Ndemitter*de)/(Nabase*db);

+disp(beta,"Maximum forward current gain");
\ No newline at end of file
diff --git a/339/CH6/EX6.8/ex6_8.sce b/339/CH6/EX6.8/ex6_8.sce
new file mode 100755
index 000000000..225be1212
--- /dev/null
+++ b/339/CH6/EX6.8/ex6_8.sce
@@ -0,0 +1,10 @@
+Tj=150;

+Ts=25;

+Pw=15;

+Rthjs=(Tj-Ts)/Pw; //Junction-to-solder point resistance

+Rthca=2;

+Rthhs=10;

+Ta=60;

+Rthtot=Rthjs+Rthca+Rthhs; //total thermal resistance

+Pth=(Tj-Ta)/(Rthtot); //dissipated power

+disp("Watts",Pth,"Maximum dissipated power");
\ No newline at end of file
diff --git a/339/CH6/EX6.9/ex6_9.JPG b/339/CH6/EX6.9/ex6_9.JPG
new file mode 100755
index 000000000..0ab72495d
--- /dev/null
+++ b/339/CH6/EX6.9/ex6_9.JPG
diff --git a/339/CH6/EX6.9/ex6_9.sce b/339/CH6/EX6.9/ex6_9.sce
new file mode 100755
index 000000000..91a34b8fe
--- /dev/null
+++ b/339/CH6/EX6.9/ex6_9.sce
@@ -0,0 +1,40 @@
+//define problem parameters

+Nd=1e16*1e6;

+d=0.75e-6;

+W=10e-6;

+L=2e-6;

+eps_r=12;

+Vd=0.8;

+mu_n=8500e-4;

+Vgs=0:-0.01:-4;

+

+//define physical constants

+q=1.60218e-19;// electron charge

+eps0=8.85e-12;// permittivity of free space

+

+eps=eps_r*eps0;

+

+//pinch-off voltage

+Vp=q*Nd*d^2/(2*eps)

+

+//threshold voltage

+Vt0=Vd-Vp

+

+//conductivity of the channel

+sigma=q*mu_n*Nd

+

+//Channel conductance

+G0=q*sigma*Nd*W*d/L

+

+//saturation current using the exact formula

+Id_sat=G0*(Vp/3-(Vd-Vgs)+2/(3*sqrt(Vp))*(Vd-Vgs).^(3/2)).*(1-(Vgs<Vt0));

+Idss=Id_sat(1)

+

+//saturation current using the quadratic law approximation

+Id_sat_square=Idss*(1-Vgs/Vt0)^2;

+

+plot(Vgs,Id_sat,Vgs,Id_sat_square);

+legend('exact formula', 'quadratic approximation',2);

+title('FET saturation current as a function of the gate-source voltage');

+xlabel('Gate-source voltage V_{GS}, V');

+ylabel('Drain saturation current I_{DSat}, A');