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+//define problem parameters
+
+ni=1.5e10*1e6; //intrinsic carrier concentration in Si [m^(-3)]
+Na=1e15*1e6; //acceptor doping concentration [m^(-3)]
+Nd=5e15*1e6; //donor concentration [m^(-3)]
+A=1e-4*1e-4; //cross sectional area [m^2]
+eps_r=11.9;  //cross sectional area [m^2]
+
+//define physical constants (SI units)
+q=1.60218e-19; //electron charge
+k=1.38066e-23; //Boltzmann's constant
+eps0=8.85e-12; //permittivity of free space
+
+eps=eps_r*eps0;
+
+T=300; //temperatuure
+
+//compute diffusion barrier voltage
+Vdiff=k*T/q*log(Na*Nd/ni^2)
+
+//junction capacitance at zero applied voltage
+C0=A*sqrt(q*eps/(1/Na+1/Nd)/2/Vdiff)
+
+//extents of the space charge region
+dn=sqrt(2*eps*Vdiff/q*Na/Nd/(Na+Nd));
+dp=sqrt(2*eps*Vdiff/q*Nd/Na/(Na+Nd));
+
+//define range for applied voltage
+VA=-5:0.1:Vdiff;
+
+//compute junction capacitance
+C=C0*(1-VA/Vdiff).^(-1/2);
+
+plot(VA,C/1e-12);
+title('Junction capacitance of abrupt Si pn-contact');
+xlabel('Applied junction voltage V_A, Volts');
+ylabel('Junction capacitance C, pF');