From b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b Mon Sep 17 00:00:00 2001 From: priyanka Date: Wed, 24 Jun 2015 15:03:17 +0530 Subject: initial commit / add all books --- 339/CH6/EX6.1/ex6_1.JPG | Bin 0 -> 29627 bytes 339/CH6/EX6.1/ex6_1.sce | 27 ++++++++++++++++ 339/CH6/EX6.10/ex6_10.JPG | Bin 0 -> 38382 bytes 339/CH6/EX6.10/ex6_10.sce | 81 ++++++++++++++++++++++++++++++++++++++++++++++ 339/CH6/EX6.11/ex6_11.JPG | Bin 0 -> 26726 bytes 339/CH6/EX6.11/ex6_11.sce | 42 ++++++++++++++++++++++++ 339/CH6/EX6.2/ex6_2.sce | 11 +++++++ 339/CH6/EX6.3/ex6_3.JPG | Bin 0 -> 18061 bytes 339/CH6/EX6.3/ex6_3.sce | 37 +++++++++++++++++++++ 339/CH6/EX6.4/ex6_4.sce | 18 +++++++++++ 339/CH6/EX6.7/ex6_7.sce | 7 ++++ 339/CH6/EX6.8/ex6_8.sce | 10 ++++++ 339/CH6/EX6.9/ex6_9.JPG | Bin 0 -> 22510 bytes 339/CH6/EX6.9/ex6_9.sce | 40 +++++++++++++++++++++++ 14 files changed, 273 insertions(+) create mode 100755 339/CH6/EX6.1/ex6_1.JPG create mode 100755 339/CH6/EX6.1/ex6_1.sce create mode 100755 339/CH6/EX6.10/ex6_10.JPG create mode 100755 339/CH6/EX6.10/ex6_10.sce create mode 100755 339/CH6/EX6.11/ex6_11.JPG create mode 100755 339/CH6/EX6.11/ex6_11.sce create mode 100755 339/CH6/EX6.2/ex6_2.sce create mode 100755 339/CH6/EX6.3/ex6_3.JPG create mode 100755 339/CH6/EX6.3/ex6_3.sce create mode 100755 339/CH6/EX6.4/ex6_4.sce create mode 100755 339/CH6/EX6.7/ex6_7.sce create mode 100755 339/CH6/EX6.8/ex6_8.sce create mode 100755 339/CH6/EX6.9/ex6_9.JPG create mode 100755 339/CH6/EX6.9/ex6_9.sce (limited to '339/CH6') diff --git a/339/CH6/EX6.1/ex6_1.JPG b/339/CH6/EX6.1/ex6_1.JPG new file mode 100755 index 000000000..1f0ed69f1 Binary files /dev/null and b/339/CH6/EX6.1/ex6_1.JPG differ diff --git a/339/CH6/EX6.1/ex6_1.sce b/339/CH6/EX6.1/ex6_1.sce new file mode 100755 index 000000000..b44461fa8 --- /dev/null +++ b/339/CH6/EX6.1/ex6_1.sce @@ -0,0 +1,27 @@ +//define physical constants +q=1.60218e-19; +k=1.38066e-23; + +// define material properties +Nc_300=[1.04e19 2.8e19 4.7e17]; +Nv_300=[6e18 1.04e19 7e18]; +mu_n= [3900 1500 8500]; +mu_p= [1900 450 400]; +Wg= [0.66 1.12 1.424]; + +T0=273; +T=-50:250; // temperature range in centigrade + +sigma=zeros([3 length(T)]); + +for s=1:3 //loop through all semi conductor materials + Nc=Nc_300(s)*((T+T0)/300).^(3/2); + Nv=Nv_300(s)*((T+T0)/300).^(3/2); +sigma=[q*sqrt(Nc.*Nv).*(exp(-Wg(s)./(2*k*(T+T0)/q)))*(mu_n(s)+mu_p(s))]; +end; + +plot(T,sigma(1),T,sigma(2),T,sigma(3)); +legend('Ge','Si','GaAs',2); +title('Conductivity of semiconductor at different temperatures'); +xlabel('Temperature, {\circ}C'); +ylabel('Conductivity \sigma, \Omega^{-1}cm^{-1}'); \ No newline at end of file diff --git a/339/CH6/EX6.10/ex6_10.JPG b/339/CH6/EX6.10/ex6_10.JPG new file mode 100755 index 000000000..e081b0256 Binary files /dev/null and b/339/CH6/EX6.10/ex6_10.JPG differ diff --git a/339/CH6/EX6.10/ex6_10.sce b/339/CH6/EX6.10/ex6_10.sce new file mode 100755 index 000000000..01833fc63 --- /dev/null +++ b/339/CH6/EX6.10/ex6_10.sce @@ -0,0 +1,81 @@ +//define problem parameters +Nd=1e16*1e6; +d=0.75e-6; +W=10e-6; +L=2e-6; +eps_r=12; +Vd=0.8; +mu_n=8500*1e-4; +lambda=0.03; + +//define physical constants +q=1.60218e-19; //electron charge +eps0=8.85e-12; //permittivity of free space + +eps=eps_r*eps0; + +// pinch-off voltage +Vp=q*Nd*d^2/(2*eps) + +//threshold voltage +Vt0=Vd-Vp + +//conductivity of the channel +sigma=q*mu_n*Nd + +//channel conductance +G0=q*sigma*Nd*W*d/L + +//define the range for gate source voltage +Vgs_min=-2.5; +Vgs_max=-1; +Vgs=Vgs_max:-0.5:Vgs_min; + +//drain source voltage +Vds=0:0.01:5; + +//compute drain saturation voltage +Vds_sat=Vgs-Vt0; + +//first the drain current is taken into account the channel length modulation +for n=1:length(Vgs) + if Vgs(n)>Vt0 + Id_sat=G0*(Vp/3-(Vd-Vgs(n))+2/(3*sqrt(Vp))*(Vd-Vgs(n))^(3/2)); + else + Id_sat=0; + end; + + Id_linear=G0*(Vds-2/(3*sqrt(Vp)).*((Vds+Vd-Vgs(n)).^(3/2)-(Vd-Vgs(n))^(3/2))).*(1+lambda*Vds); + Id_saturation=Id_sat*(1+lambda*Vds); + Id=Id_linear.*(Vds<=Vds_sat(n))+Id_saturation.*(Vds>Vds_sat(n)); + plot(Vds,Id); +set(gca(),"auto_clear","off"); +end; + +//next the channel length modulation is not taken into account +for n=1:length(Vgs) + if Vgs(n)>Vt0 + Id_sat=G0*(Vp/3-(Vd-Vgs(n))+2/(3*sqrt(Vp))*(Vd-Vgs(n))^(3/2)); + else + Id_sat=0; + end; + + Id_linear=G0*(Vds-2/(3*sqrt(Vp)).*((Vds+Vd-Vgs(n)).^(3/2)-(Vd-Vgs(n))^(3/2))); + Id_saturation=Id_sat; + Id=Id_linear.*(Vds<=Vds_sat(n))+Id_saturation.*(Vds>Vds_sat(n)); + plot(Vds, Id); +end; + +//computation of drain saturation current + +Vgs=0:-0.01:-4; +Vds_sat=Vgs-Vt0; + +Id_sat=G0*(Vp/3-(Vd-Vgs)+2/(3*sqrt(Vp))*(Vd-Vgs).^(3/2)).*(1+lambda*Vds_sat).*(1-(Vgs(Vgs-Vth)))+1/2*(Vgs-Vth)^2*(1-(Vds<=(Vgs-Vth)))); + plot(Vds,Id/1e-3); + set(gca(),"auto_clear","off"); +end; + + +title('Drain current vs. V_{DS} plotted for different V_{GS}'); +xlabel('Drain-source voltage V_{DS}, V'); +ylabel('Drain current I_{D}, mA'); \ No newline at end of file diff --git a/339/CH6/EX6.2/ex6_2.sce b/339/CH6/EX6.2/ex6_2.sce new file mode 100755 index 000000000..fb8d272e4 --- /dev/null +++ b/339/CH6/EX6.2/ex6_2.sce @@ -0,0 +1,11 @@ +// doping concentrations +Na=1*10^18; +Nd=5*10^15; +//intrinsic concentrations +ni=1.5*10^10; +T=300; +term=(Na*Nd)/(ni*ni); +k=1.38*10^-23; +q=1.6*10^-19; +Vdiff=(k*T)*log(term)/q; +disp("Volts",Vdiff,"Barrier voltage"); \ No newline at end of file diff --git a/339/CH6/EX6.3/ex6_3.JPG b/339/CH6/EX6.3/ex6_3.JPG new file mode 100755 index 000000000..3affece32 Binary files /dev/null and b/339/CH6/EX6.3/ex6_3.JPG differ diff --git a/339/CH6/EX6.3/ex6_3.sce b/339/CH6/EX6.3/ex6_3.sce new file mode 100755 index 000000000..46f806973 --- /dev/null +++ b/339/CH6/EX6.3/ex6_3.sce @@ -0,0 +1,37 @@ +//define problem parameters + +ni=1.5e10*1e6; //intrinsic carrier concentration in Si [m^(-3)] +Na=1e15*1e6; //acceptor doping concentration [m^(-3)] +Nd=5e15*1e6; //donor concentration [m^(-3)] +A=1e-4*1e-4; //cross sectional area [m^2] +eps_r=11.9; //cross sectional area [m^2] + +//define physical constants (SI units) +q=1.60218e-19; //electron charge +k=1.38066e-23; //Boltzmann's constant +eps0=8.85e-12; //permittivity of free space + +eps=eps_r*eps0; + +T=300; //temperatuure + +//compute diffusion barrier voltage +Vdiff=k*T/q*log(Na*Nd/ni^2) + +//junction capacitance at zero applied voltage +C0=A*sqrt(q*eps/(1/Na+1/Nd)/2/Vdiff) + +//extents of the space charge region +dn=sqrt(2*eps*Vdiff/q*Na/Nd/(Na+Nd)); +dp=sqrt(2*eps*Vdiff/q*Nd/Na/(Na+Nd)); + +//define range for applied voltage +VA=-5:0.1:Vdiff; + +//compute junction capacitance +C=C0*(1-VA/Vdiff).^(-1/2); + +plot(VA,C/1e-12); +title('Junction capacitance of abrupt Si pn-contact'); +xlabel('Applied junction voltage V_A, Volts'); +ylabel('Junction capacitance C, pF'); diff --git a/339/CH6/EX6.4/ex6_4.sce b/339/CH6/EX6.4/ex6_4.sce new file mode 100755 index 000000000..437073e4f --- /dev/null +++ b/339/CH6/EX6.4/ex6_4.sce @@ -0,0 +1,18 @@ +//doping concentrations +Nc=2.8*10^19; +Nd=1*10^16; +term=Nc/Nd; +k=1.38*10^-23; //Boltzman's constant +q=1.6*10^-19; //charge +Vc=(k*T)*log(term)/q; +Vm=5.1; //workfunction +X=4.05; //affinity +Vd=(Vm-X)-Vc; //Barrier Voltage +Epsilon=11.9*8.854*10^-12; +ds=sqrt((2*Epsilon*Vd)/(q*Nd)); +A=1*10^-4; //cross-sectional area +Cj=(A*Epsilon)/(ds); //junction capacitance +disp("Volts",Vc,"Conduction Band potential"); +disp("Volts",Vd,"Built in Barrier Voltage"); +disp("metre",ds,"Space Charge Width"); +disp("Farads",Cj,"Junction Capacitance"); \ No newline at end of file diff --git a/339/CH6/EX6.7/ex6_7.sce b/339/CH6/EX6.7/ex6_7.sce new file mode 100755 index 000000000..e04698b35 --- /dev/null +++ b/339/CH6/EX6.7/ex6_7.sce @@ -0,0 +1,7 @@ +Ndemitter=1*10^19; // donor concentration in emitter +Nabase=1*10^17; //acceptor concentration in base +de=0.8*10^-6; //spatial extent of the emitter +db=1.2*10^-6; //spatial extent of the base +alpha=2.8125; +beta=(alpha*Ndemitter*de)/(Nabase*db); +disp(beta,"Maximum forward current gain"); \ No newline at end of file diff --git a/339/CH6/EX6.8/ex6_8.sce b/339/CH6/EX6.8/ex6_8.sce new file mode 100755 index 000000000..225be1212 --- /dev/null +++ b/339/CH6/EX6.8/ex6_8.sce @@ -0,0 +1,10 @@ +Tj=150; +Ts=25; +Pw=15; +Rthjs=(Tj-Ts)/Pw; //Junction-to-solder point resistance +Rthca=2; +Rthhs=10; +Ta=60; +Rthtot=Rthjs+Rthca+Rthhs; //total thermal resistance +Pth=(Tj-Ta)/(Rthtot); //dissipated power +disp("Watts",Pth,"Maximum dissipated power"); \ No newline at end of file diff --git a/339/CH6/EX6.9/ex6_9.JPG b/339/CH6/EX6.9/ex6_9.JPG new file mode 100755 index 000000000..0ab72495d Binary files /dev/null and b/339/CH6/EX6.9/ex6_9.JPG differ diff --git a/339/CH6/EX6.9/ex6_9.sce b/339/CH6/EX6.9/ex6_9.sce new file mode 100755 index 000000000..91a34b8fe --- /dev/null +++ b/339/CH6/EX6.9/ex6_9.sce @@ -0,0 +1,40 @@ +//define problem parameters +Nd=1e16*1e6; +d=0.75e-6; +W=10e-6; +L=2e-6; +eps_r=12; +Vd=0.8; +mu_n=8500e-4; +Vgs=0:-0.01:-4; + +//define physical constants +q=1.60218e-19;// electron charge +eps0=8.85e-12;// permittivity of free space + +eps=eps_r*eps0; + +//pinch-off voltage +Vp=q*Nd*d^2/(2*eps) + +//threshold voltage +Vt0=Vd-Vp + +//conductivity of the channel +sigma=q*mu_n*Nd + +//Channel conductance +G0=q*sigma*Nd*W*d/L + +//saturation current using the exact formula +Id_sat=G0*(Vp/3-(Vd-Vgs)+2/(3*sqrt(Vp))*(Vd-Vgs).^(3/2)).*(1-(Vgs