initial commit / add all books

16 files changed, 313 insertions, 0 deletions

diff --git a/2300/CH13/EX13.16.1/Ex13_1.sce b/2300/CH13/EX13.16.1/Ex13_1.sce
new file mode 100755
index 000000000..e42f8cd8f
--- /dev/null
+++ b/2300/CH13/EX13.16.1/Ex13_1.sce
@@ -0,0 +1,17 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+ND=2*10^21//ND=donor concentration in m^-3 of an n-channel silicon JFET

+e=1.6*10^-19//e=charge of an electron

+E=12*8.854*10^-12//E=permittivity of the material where 12=dielectric constant of silicon(given)

+a=(4*10^-6)/2//2*a=channel width in metres and 2*a=4*10^-6

+Vp=(e*ND*(a^2))/(2*E)

+format("v",5)

+disp("V",Vp,"The pinch-off voltage is =")

+VGS=-2//VGS=gate source voltage

+//Vp=VDsat-VGS where VDsat=saturation voltage

+VDsat=Vp+VGS

+format("v",5)

+disp("V",VDsat,"The saturation voltage is =")

diff --git a/2300/CH13/EX13.16.10/Ex13_10.sce b/2300/CH13/EX13.16.10/Ex13_10.sce
new file mode 100755
index 000000000..f90c17168
--- /dev/null
+++ b/2300/CH13/EX13.16.10/Ex13_10.sce
@@ -0,0 +1,12 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+IDS=-15//IDS=drain saturation current in terms of mA

+Vp=5//Vp=pinch-off voltage

+IDSS=-40//IDSS=saturation drain current in mA when VGS(gate-to-source voltage)=0V

+//By Shockley's equation

+//IDS=IDSS*(1-(VGS/Vp))^2

+VGS=Vp*(1-sqrt(IDS/IDSS))//VGS=gate-to-source voltage

+disp("V",VGS,"The gate-to-source voltage VGS is=")

diff --git a/2300/CH13/EX13.16.11/Ex13_11.sce b/2300/CH13/EX13.16.11/Ex13_11.sce
new file mode 100755
index 000000000..48eb05ef0
--- /dev/null
+++ b/2300/CH13/EX13.16.11/Ex13_11.sce
@@ -0,0 +1,21 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+IDSS=10*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V

+Vp=-5//Vp=pinch-off voltage

+VDD=24//VDD=drain supply voltage

+VDS=8//VDS=drain-to-source voltage

+ID=4*10^-3//ID=drain current in Ampere

+R1=2*10^6//R1=resistance in the voltage divider network in ohms

+R2=1*10^6//R2=resistance in the voltage divider network in ohms

+VT=(R2/(R1+R2))*VDD//VT=Thevenin voltage

+//By Shockley's equation

+//ID=IDS=IDSS*(1-(VGS/Vp))^2

+VGS=Vp*(1-sqrt(ID/IDSS))//VGS=gate-to-source voltage

+//VGS=VT-(ID*Rs) where Rs=resistance connected at the source terminal

+Rs=(VT-VGS)/ID

+disp("kilo ohm",Rs/10^3,"The value of Rs =")//converting Rs in terms of kilo-ohm

+Rch=VDS/ID//Rch=channel resistance at the Q-point

+disp("kilo ohm",Rch/10^3,"The channel resistance at the Q-point is=")//converting Rch in terms of kilo-ohm

diff --git a/2300/CH13/EX13.16.12/Ex13_12.sce b/2300/CH13/EX13.16.12/Ex13_12.sce
new file mode 100755
index 000000000..1292b397a
--- /dev/null
+++ b/2300/CH13/EX13.16.12/Ex13_12.sce
@@ -0,0 +1,13 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+ID=5//ID=saturation drain current in terms of mA in an n-channel enhancement mode MOSFET

+VGS=8//VGS=gate-to-source voltage

+VT=4//VT=Threshold voltage

+VGS2=10//VGS2=gate-to-source voltage for which saturation drain current is to be calculated

+//ID=K*(VGS-VT)^2 where K=(IDSS/(Vp^2)) and Vp=pinch-off voltage ,IDSS=drain saturation current for VGS=0 V

+K=ID/((VGS-VT)^2)

+ID1=K*(VGS2-VT)^2//ID1=The saturation drain current for gate-source voltage of 10V i e VGS2

+disp("mA",ID1,"The saturation drain current for gate-source voltage of 10V is =")

diff --git a/2300/CH13/EX13.16.13/Ex13_13.sce b/2300/CH13/EX13.16.13/Ex13_13.sce
new file mode 100755
index 000000000..92d2e197a
--- /dev/null
+++ b/2300/CH13/EX13.16.13/Ex13_13.sce
@@ -0,0 +1,22 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+//For n-channel enhancement mode MOSFET operating in active region

+VT=2//VT=Threshold voltage

+K=0.5//K=(IDSS/(Vp^2)) in terms of mA/V^2

+VDD=15//VDD=drain supply voltage

+RL=1//RL=load resistance in kilo ohm

+R1=200*10^3//R1=resistance in the voltage divider network in terms of ohms

+R2=100*10^3//R2=resistance in the voltage divider network in terms of ohms

+VGS=(R2/(R1+R2))*VDD//VGS=gate-to-source voltage

+disp("V",VT,"Threshold voltage is =")

+disp("V",VGS,"The gate-to-source voltage VGS is =")

+ID=K*(VGS-VT)^2//ID=drain current in mA

+disp("mA",ID,"The value of drain current ID is =")

+VDS=VDD-(ID*RL)//VDS=drain-to-source voltage

+disp("V",VDS,"The value of drain-to-source voltage VDS is=")

+if (VDS>(VGS-VT)) then

+    disp("As VDS>(VGS-VT),(i.e. 10.5>(5-2)),the operation is indeed in the active region ")

+end

diff --git a/2300/CH13/EX13.16.14/Ex13_14.sce b/2300/CH13/EX13.16.14/Ex13_14.sce
new file mode 100755
index 000000000..4d94f51fc
--- /dev/null
+++ b/2300/CH13/EX13.16.14/Ex13_14.sce
@@ -0,0 +1,26 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+//For n-channel MOSFET operating in the depletion mode

+VDD=18//VDD=drain supply voltage

+VGS=0//VGS=gate-to-source voltage

+RL=600//RL=load resistance in ohms

+IDSS=18//IDSS=drain saturation current in mA for gate-to-source voltage (VGS)=0V

+Vp=-5//Vp=pinch-off voltage

+//Assuming that the operation is in the active region

+//ID=IDS=IDSS*(1-(VGS/Vp))^2

+//ID=(IDSS/Vp^2)(VGS-Vp)^2

+K=IDSS/(Vp^2)

+disp("mA/V^2",K,"The value of K is =")

+ID=IDSS//ID=drain current 

+disp("mA",ID,"Since VGS=0,the value of ID=IDSS is=")

+VDS=VDD-(ID*(RL/10^3))//VDS=drain-to-source voltage and also converting RL in terms of kilo ohm

+disp("V",VDS,"The value of VDS is =")

+disp("V",Vp,"Pinch off voltage Vp is =")

+disp("V",VGS,"Gate to source voltage VGS is =")

+if (VDS>(VGS-Vp)) then

+    disp("As VDS>(VGS-Vp),(i.e.7.5>(0-(-5))),the MOSFET is actually in the active region ")

+end

+

diff --git a/2300/CH13/EX13.16.15/Ex13_15.sce b/2300/CH13/EX13.16.15/Ex13_15.sce
new file mode 100755
index 000000000..831aac95a
--- /dev/null
+++ b/2300/CH13/EX13.16.15/Ex13_15.sce
@@ -0,0 +1,20 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+//r given in textbook is taken as rd afterwards.Hence r=rd

+rd=100*10^3//rd=drain resistance in ohms

+gm=3500*10^-6//gm=transconductance in terms of A/V (or S)

+RL=5*10^3//RL=load resistance in ohms

+u=rd*gm//u=amplification factor

+AV=(u*RL)/(((u+1)*RL)+rd)//AV=voltage gain

+format("v",6)

+disp(AV,"The voltage gain is=")

+Ro=rd/(u+1)//Ro=output resistance excluding RL

+format("v",5)

+disp("ohm",Ro,"The output resistance excluding RL is =")

+Ro1=(rd*RL)/(rd+((u+1)*RL))//Ro1=Ro'=output resistance including RL

+format("v",6)

+disp("ohm",floor(Ro1),"The output resistance including RL is=")//floor function is used to round down the value

+

diff --git a/2300/CH13/EX13.16.16/Ex13_16.sce b/2300/CH13/EX13.16.16/Ex13_16.sce
new file mode 100755
index 000000000..cc53992ed
--- /dev/null
+++ b/2300/CH13/EX13.16.16/Ex13_16.sce
@@ -0,0 +1,15 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+//In a FET used in a CS amplifier

+IDSS=4//IDSS=drain saturation current in mA for gate-to-source voltage (VGS)=0V

+Vp=-3//Vp=pinch-off voltage

+RL=10//RL=load resistance in kilo ohms

+VGS=-0.7//VGS=gate-to-source voltage

+gmo=-(2*IDSS)/Vp//gmo=transconductance in A/V of a JFET when VGS=0V

+gm=gmo*(1-(VGS/Vp))//gm=transconductance

+AV=-gm*RL//AV=the small signal voltage gain

+disp(AV,"The small signal voltage gain is =")

+//Decimal term in the answer displayed in textbook is incorrect as 2.04*10=20.4 and not 20.04.

diff --git a/2300/CH13/EX13.16.2/Ex13_2.sce b/2300/CH13/EX13.16.2/Ex13_2.sce
new file mode 100755
index 000000000..614fef170
--- /dev/null
+++ b/2300/CH13/EX13.16.2/Ex13_2.sce
@@ -0,0 +1,9 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+VGS=-1.5//VGS=gate-to-source voltage of a JFET

+IDsat=5*10^-3//IDsat=drain saturation current in Ampere

+RS=(abs(VGS))/(abs(IDsat))//RS=resistance to be calculated=|VGS| / |IDsat|

+disp("ohm",RS,"Resistance to be calculated is =")

diff --git a/2300/CH13/EX13.16.3/Ex13_3.sce b/2300/CH13/EX13.16.3/Ex13_3.sce
new file mode 100755
index 000000000..e15f85f45
--- /dev/null
+++ b/2300/CH13/EX13.16.3/Ex13_3.sce
@@ -0,0 +1,17 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+VGS1=-1

+VGS2=-1.5//VGS1,VGS2=change in VGS(gate-to-source voltage) from VGS1 to VGS2 keeping VDS(drain-to-source voltage) constant

+ID1=7*10^-3

+ID2=5*10^-3//ID1,ID2=change in ID(drain current) in Ampere from ID1 to ID2

+//gm=(id/vgs)|VDS=constant where gm=transconductance

+id=ID1-ID2

+vgs=VGS1-VGS2

+gm=id/vgs

+disp("mA/V",gm*10^3,"The transconductance of the FET is =")

+rd=200*10^3//rd=ac drain resistance in ohms

+u=rd*gm//u=amplification factor

+disp(u,"The amplification factor of the FET is =")

diff --git a/2300/CH13/EX13.16.4/Ex13_4.sce b/2300/CH13/EX13.16.4/Ex13_4.sce
new file mode 100755
index 000000000..7acda2d40
--- /dev/null
+++ b/2300/CH13/EX13.16.4/Ex13_4.sce
@@ -0,0 +1,14 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+RL=250*10^3//RL=load resistance in ohms in a FET amplifier

+rd=100*10^3//rd=ac drain resistance in ohms

+gm=0.5*10^-3//gm=transconductance in A/V

+u=rd*gm//u=amplification factor

+AV=-(u*RL)/(rd+RL)//AV=voltage gain

+disp(AV,"The voltage gain of FET amplifier is =")

+disp("kilo ohm",rd/1000,"The output resistance excluding RL is rd=")

+ro=(rd*RL)/(rd+RL)//ro=output resistance including RL

+disp("kilo ohm",ro/1000,"Including RL,the output resistance is=")

diff --git a/2300/CH13/EX13.16.5/Ex13_5.sce b/2300/CH13/EX13.16.5/Ex13_5.sce
new file mode 100755
index 000000000..1191fcc56
--- /dev/null
+++ b/2300/CH13/EX13.16.5/Ex13_5.sce
@@ -0,0 +1,16 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+//For n-channel JFET 

+IDSS=12*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V

+Vp=-4//Vp=pinch-off voltage

+VGS=-2//VGS=gate-to-source voltage

+//By Shockley's equation

+IDS=IDSS*(1-(VGS/Vp))^2//IDS=saturation drain current to be calculated for given value of VGS

+disp("mA",IDS/10^-3,"The drain current for given value of VGS is=")

+gmo=4*10^-3//gmo=transconductance in A/V of a JFET when VGS=0V

+//gmo=-(2*IDSS)/Vp

+Vp=-(2*IDSS)/gmo//Vp=pinch-off voltage to be calculated for given value of transconductance

+disp("V",Vp,"The pinch-off voltage for given value of gmo is =")

diff --git a/2300/CH13/EX13.16.6/Ex13_6.sce b/2300/CH13/EX13.16.6/Ex13_6.sce
new file mode 100755
index 000000000..59d58beb9
--- /dev/null
+++ b/2300/CH13/EX13.16.6/Ex13_6.sce
@@ -0,0 +1,38 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+IDSS=12*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V

+Vp=-4//Vp=pinch-off voltage

+VDD=30//VDD=drain supply voltage

+RL=5*10^3//RL=load resistance in ohms

+Rs=600//Rs=resistance connected to source terminal in ohms

+Rg=1.5*10^6//Rg=resistance connected to gate terminal in ohms

+//By Shockley's equation

+//IDS=IDSS*(1-(VGS/Vp))^2 where IDS=saturation drain current to be calculated for given value of VGS

+//Substituting VGS=(-ID*Rs) we get ID=IDS

+//ID=IDSS*(1+((ID*Rs)/Vp))^2

+//ID=12*(1+((0.6*ID)/-4))^2 where ID is obtained in mA

+//(0.27*ID^2)-(4.6*ID)+12=0.........(1)

+ID1=(4.6+sqrt((4.6^2)-(48*0.27)))/(2*0.27)

+format("v",5)

+ID2=(4.6-sqrt((4.6^2)-(48*0.27)))/(2*0.27)//ID1,ID2 are the 2 roots of the above equation (1)

+format("v",5)

+disp("mA",ID1,"ID1=")

+disp("mA",ID2,"ID2=")

+if (ID1>(IDSS/10^-3)) then//IDSS is converted in terms of mA

+    disp("mA",ID1,"As ID1>IDSS ,the value rejected is ID1=")

+end

+if (ID2>(IDSS/10^-3)) then//IDSS is converted in terms of mA

+    disp("mA",ID2,"As ID2>IDSS ,the value rejected is ID2=")

+end

+disp("mA",ID2,"Therefore,the drain current is =")

+ID=ID2*10^-3//converting ID2 in terms of Ampere

+VDS=VDD-ID*(RL+Rs)//VDS=drain-to-source voltage

+disp("V",VDS,"The value of drain-to-source voltage VDS is =")

+VGS=-ID*Rs//VGS=gate-to-source voltage

+disp("V",VGS,"The value of gate-to-source voltage VGS is=")

+if(Vp<0 & VDS>(VGS-Vp))

+    disp("As Vp=(-4)<VGS<0V and VDS=12V>(VGS-Vp),it is verified that the JFET is in the saturation region of the drain characteristics")

+end

diff --git a/2300/CH13/EX13.16.7/Ex13_7.sce b/2300/CH13/EX13.16.7/Ex13_7.sce
new file mode 100755
index 000000000..7aac81ba6
--- /dev/null
+++ b/2300/CH13/EX13.16.7/Ex13_7.sce
@@ -0,0 +1,39 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+IDSS=10*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V

+Vp=-2//Vp=pinch-off voltage

+VDD=20//VDD=drain supply voltage

+RL=1*10^3//RL=load resistance in ohms

+Rs=2*1000//Rs=resistance connected to source terminal in ohms

+R1=12*10^6//R1=resistance in the voltage divider network in ohms

+R2=8*10^6//R2=resistance in the voltage divider network in ohms

+VT=(R2/(R1+R2))*VDD//VT=Thevenin voltage

+//VGS=VT-(ID*Rs)

+//By Shockley's equation

+//IDS=IDSS*(1-(VGS/Vp))^2 where IDS=saturation drain current to be calculated for given value of VGS

+//Substituting VGS=(VGS-ID*Rs) we get ID=IDS

+//(10*ID^2)-(101*ID)+250=0.........(1)where ID is obtained in mA

+ID1=(101+sqrt((101^2)-(40*250)))/(2*10)

+format("v",5)

+ID2=(101-sqrt((101^2)-(40*250)))/(2*10)//ID1,ID2 are the 2 roots of the above equation (1)

+format("v",5)

+disp("mA",ID1,"ID1=")

+disp("mA",ID2,"ID2=")

+//For ID1

+VGS=VT-(ID1*Rs)//VGS=gate-to-source voltage calculated for ID1

+if (Vp>VGS) then

+    disp("mA",ID1,"As Vp>(VGS calculated using ID1), the value rejected is ID1=")

+end

+disp("mA",ID2,"Therefore,the drain current is =")

+ID=ID2*10^-3//converting ID2 in terms of Amperes

+VGS=VT-(ID*Rs)//VGS=gate-to-source voltage

+disp("V",VGS,"VGS=")

+VDS=VDD-(ID*(RL+Rs))//VDS=drain-to-source voltage

+format("v",2)

+disp("V",VDS,"VDS=")

+if(Vp<VGS & VDS>(VGS-Vp))

+    disp("As Vp=(-2)<(VGS=-0.68V) and VDS=7V>(VGS-Vp),it is checked that the JFET operates in the saturation region ")

+end

diff --git a/2300/CH13/EX13.16.8/Ex13_8.sce b/2300/CH13/EX13.16.8/Ex13_8.sce
new file mode 100755
index 000000000..6e9b2a1db
--- /dev/null
+++ b/2300/CH13/EX13.16.8/Ex13_8.sce
@@ -0,0 +1,16 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+//For a n-channel JFET

+IDSS=10*10^-3//IDSS=saturation drain current in Ampere when VGS(gate-to-source voltage)=0V

+Vp=(-4)//Vp=pinch-off voltage

+VGS=(-2.5)//VGS=gate-to-source voltage

+//By Shockley's equation

+IDS=IDSS*(1-(VGS/Vp))^2//IDS=saturation drain current to be calculated for given value of VGS

+format("v",5)

+disp("mA",IDS/10^-3,"The drain current for given value of VGS is=")//converting IDS in terms of mA

+VDSmin=VGS-Vp//VDSmin=minimum value of drain-to-source voltage for the onset of the saturation region

+format("v",5)

+disp("V",VDSmin,"The minimum value of VDS for saturation is=")

diff --git a/2300/CH13/EX13.16.9/Ex13_9.sce b/2300/CH13/EX13.16.9/Ex13_9.sce
new file mode 100755
index 000000000..174ec208a
--- /dev/null
+++ b/2300/CH13/EX13.16.9/Ex13_9.sce
@@ -0,0 +1,18 @@
+//scilab 5.4.1

+//Windows 7 operating system

+//chapter 13 Field-Effect Transistors

+clc

+clear

+VDD=20//VDD=drain supply voltage

+IDS=0.9//IDS=drain saturation current in terms of mA

+Vp=-3//Vp=pinch-off voltage

+IDSS=8//IDSS=saturation drain current in mA when VGS(gate-to-source voltage)=0V

+//By Shockley's equation

+//IDS=IDSS*(1-(VGS/Vp))^2

+VGS=Vp*(1-sqrt(IDS/IDSS))//VGS=gate-to-source voltage

+disp("V",VGS,"The gate-to-source voltage VGS is=")

+//gm=(dIDS/dVGS)|VDS=constant where gm=transconductance

+gm=-((2*IDSS)/Vp)*(1-(VGS/Vp))

+format("v",5)

+disp("mS",gm,"The value of transconductance is=")

+