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+clc//
+//
+//
+
+//Variable declaration
+ni=2.37*10^19; //carrier density(per m^3)
+mew_e=0.38; //electron mobility(m^2/Vs)
+mew_h=0.18; //hole mobility(m^2/Vs)
+e=1.6*10^-19;
+
+//Calculation
+sigma_i=ni*e*(mew_e+mew_h);
+rho=1/sigma_i; //resistivity(ohm m)
+
+//Result
+printf("\n resistivity is %0.3f ohm m",rho)