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author | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
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committer | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
commit | 7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch) | |
tree | dbb9e3ddb5fc829e7c5c7e6be99b2c4ba356132c /3665/CH8/EX8.1/Ex8_1.sce | |
parent | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff) | |
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initial commit / add all books
Diffstat (limited to '3665/CH8/EX8.1/Ex8_1.sce')
-rw-r--r-- | 3665/CH8/EX8.1/Ex8_1.sce | 16 |
1 files changed, 16 insertions, 0 deletions
diff --git a/3665/CH8/EX8.1/Ex8_1.sce b/3665/CH8/EX8.1/Ex8_1.sce new file mode 100644 index 000000000..bbfca68f4 --- /dev/null +++ b/3665/CH8/EX8.1/Ex8_1.sce @@ -0,0 +1,16 @@ +clc//
+//
+//
+
+//Variable declaration
+ni=2.37*10^19; //carrier density(per m^3)
+mew_e=0.38; //electron mobility(m^2/Vs)
+mew_h=0.18; //hole mobility(m^2/Vs)
+e=1.6*10^-19;
+
+//Calculation
+sigma_i=ni*e*(mew_e+mew_h);
+rho=1/sigma_i; //resistivity(ohm m)
+
+//Result
+printf("\n resistivity is %0.3f ohm m",rho)
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