3 files changed, 49 insertions, 47 deletions
diff --git a/284/CH10/EX10.10/ex_10.sce b/284/CH10/EX10.10/ex_10.sce
index 3d45afa3e..87bc3ca89 100755
--- a/284/CH10/EX10.10/ex_10.sce
+++ b/284/CH10/EX10.10/ex_10.sce
@@ -1,13 +1,14 @@
-// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
-//Caption_Substrate bias effects
-//Ex_10//page 478
-T=300
-Na=3*10^16
-tox=500*10^-8
-VSB=1
-ni=1.5*10^10     //intrinsic carrier concentration
-phi_fp=0.0259*log(Na/ni)
-eps_ox=3.9*8.85*10^-14
-Cox=eps_ox/tox
-delVT=(2*e*eps*Na)^0.5*((2*phi_fp+VSB)^0.5-(2*phi_fp)^0.5)/Cox
-printf('The change in threshold voltage is %1.2fV',delVT)
+// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
+//Caption_Substrate bias effects
+//Ex_10//page 478
+e = 1.6*10^-19;
+T=300
+Na=3*10^16
+tox=500*10^-8
+VSB=1
+ni=1.5*10^10     //intrinsic carrier concentration
+phi_fp=0.0259*log(Na/ni)
+eps_ox=3.9*8.85*10^-14
+Cox=eps_ox/tox
+delVT=(2*e*eps_ox*Na)^0.5*((2*phi_fp+VSB)^0.5-(2*phi_fp)^0.5)/Cox
+printf('The change in threshold voltage is %1.2fV',delVT)
+\ No newline at end of file
diff --git a/284/CH10/EX10.6/ex_6.sce b/284/CH10/EX10.6/ex_6.sce
index 0bd83a43b..457a28921 100755
--- a/284/CH10/EX10.6/ex_6.sce
+++ b/284/CH10/EX10.6/ex_6.sce
@@ -1,17 +1,18 @@
-// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
-//Caption_Threshold voltage voltage
-//Ex_6//page 448
-tox=650*10^-8
-eps=11.7*8.85*10^-14
-eps_ox=3.9*8.85*10^-14
-Qss=10^10
-Vtp=-1
-Nd=2.5*10^14
-ni=1.5*10^10     //intrinsic carrier concentration
-phi_tn=0.0259*log(Nd/ni)
-xdt=(4*eps*phi_tn/(e*Nd))^0.5
-QSD_MAX=e*Nd*xdt;
-phi_ms=-0.35
-Vtp2=(-QSD_MAX-Qss*e)*(tox/eps_ox)+phi_ms-2*phi_tn
-q=abs(Vtp2)==Vtp
-printf('Since Vtp2=Vtp, it is essentially equal to the desired result')
+// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
+//Caption_Threshold voltage voltage
+//Ex_6//page 448
+e = 1.6*10^-19;
+tox=650*10^-8
+eps=11.7*8.85*10^-14
+eps_ox=3.9*8.85*10^-14
+Qss=10^10
+Vtp=-1
+Nd=2.5*10^14
+ni=1.5*10^10     //intrinsic carrier concentration
+phi_tn=0.0259*log(Nd/ni)
+xdt=(4*eps*phi_tn/(e*Nd))^0.5
+QSD_MAX=e*Nd*xdt;
+phi_ms=-0.35
+Vtp2=(-QSD_MAX-Qss*e)*(tox/eps_ox)+phi_ms-2*phi_tn
+q=abs(Vtp2)==Vtp
+printf('Since Vtp2=Vtp, it is essentially equal to the desired result')
+\ No newline at end of file
diff --git a/284/CH10/EX10.7/ex_7.sce b/284/CH10/EX10.7/ex_7.sce
index 9fa60069d..61b870c43 100755
--- a/284/CH10/EX10.7/ex_7.sce
+++ b/284/CH10/EX10.7/ex_7.sce
@@ -1,17 +1,17 @@
-// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
-//Caption_Capacitance Voltage characteristics
-//Ex_7//page 455
-Na=10^16
-tox=550*10^-8     //oxide thickness
-eps=11.7*8.85*10^-14
-eps_ox=3.9*8.85*10^-14
-Cox=eps_ox/tox*10^9
-ni=1.5*10^10     //intrinsic carrier concentration
-phi_fp=0.0259*log(Na/ni)
-xdt=(4*eps*phi_fp/(e*Na))^0.5
-Cmin=eps_ox/(tox+(eps_ox/eps)*xdt)*10^9
-r=Cmin/Cox
-CFB=eps_ox/(tox+(eps_ox/eps)*(0.0259*eps/(e*Na))^0.5) *10^9   //flat band capacitance
-r2=CFB/Cox
-printf('The value of oxide capacitance, minimum capacitance and flat band capacitance are %1.2f nF, %1.2f nF and %1.2f nF respectively',Cox,Cmin,CFB)
- 
-\ No newline at end of file
+// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
+//Caption_Capacitance Voltage characteristics
+//Ex_7//page 455
+e = 1.6*10^-19;
+Na=10^16
+tox=550*10^-8     //oxide thickness
+eps=11.7*8.85*10^-14
+eps_ox=3.9*8.85*10^-14
+Cox=eps_ox/tox*10^9
+ni=1.5*10^10     //intrinsic carrier concentration
+phi_fp=0.0259*log(Na/ni)
+xdt=(4*eps*phi_fp/(e*Na))^0.5
+Cmin=eps_ox/(tox+(eps_ox/eps)*xdt)*10^9
+r=Cmin/Cox
+CFB=eps_ox/(tox+(eps_ox/eps)*(0.0259*eps/(e*Na))^0.5) *10^9   //flat band capacitance
+r2=CFB/Cox
+printf('The value of oxide capacitance, minimum capacitance and flat band capacitance are %1.2f nF, %1.2f nF and %1.2f nF respectively',Cox,Cmin,CFB)
+\ No newline at end of file