1 files changed, 18 insertions, 17 deletions
diff --git a/284/CH10/EX10.6/ex_6.sce b/284/CH10/EX10.6/ex_6.sce
index 0bd83a43b..457a28921 100755
--- a/284/CH10/EX10.6/ex_6.sce
+++ b/284/CH10/EX10.6/ex_6.sce
@@ -1,17 +1,18 @@
-// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
-//Caption_Threshold voltage voltage
-//Ex_6//page 448
-tox=650*10^-8
-eps=11.7*8.85*10^-14
-eps_ox=3.9*8.85*10^-14
-Qss=10^10
-Vtp=-1
-Nd=2.5*10^14
-ni=1.5*10^10     //intrinsic carrier concentration
-phi_tn=0.0259*log(Nd/ni)
-xdt=(4*eps*phi_tn/(e*Nd))^0.5
-QSD_MAX=e*Nd*xdt;
-phi_ms=-0.35
-Vtp2=(-QSD_MAX-Qss*e)*(tox/eps_ox)+phi_ms-2*phi_tn
-q=abs(Vtp2)==Vtp
-printf('Since Vtp2=Vtp, it is essentially equal to the desired result')
+// Chapter 10_Fundamentals of the Metal Oxide Semiconductor Field Effect Transistor
+//Caption_Threshold voltage voltage
+//Ex_6//page 448
+e = 1.6*10^-19;
+tox=650*10^-8
+eps=11.7*8.85*10^-14
+eps_ox=3.9*8.85*10^-14
+Qss=10^10
+Vtp=-1
+Nd=2.5*10^14
+ni=1.5*10^10     //intrinsic carrier concentration
+phi_tn=0.0259*log(Nd/ni)
+xdt=(4*eps*phi_tn/(e*Nd))^0.5
+QSD_MAX=e*Nd*xdt;
+phi_ms=-0.35
+Vtp2=(-QSD_MAX-Qss*e)*(tox/eps_ox)+phi_ms-2*phi_tn
+q=abs(Vtp2)==Vtp
+printf('Since Vtp2=Vtp, it is essentially equal to the desired result')
+\ No newline at end of file