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+//Example 3.5
+clc
+disp("(a) For a silicon transistor,")
+disp("V_Y = 0.5 V,  V_BE2 = 0.6 V,  V0 = 0.7 V,  V_CE(sat) = 0.3 V")
+disp("This is a practical circuit")
+disp("Therefore,  V_CC2 = V_CC = 30 V")
+vbb=60/3
+format(3)
+disp(vbb,"V_BB(in V) = R2*V_CC / R1+R2 =")
+vcc1=15+10
+format(4)
+disp(vcc1,"and  V_CC1(in V) = (R''''/R''+R'''')*V_CC + (R''/R''+R'''')*V_BB =")
+disp("R_C1 = R''*R'''' / R''+R'''' = 550 ohm")
+disp("Assume that Q1 saturates and Q2 is in active region.")
+disp("I_C2 = V_CC1/R_e  and  R_e = R_e1 || R_e2 = 1.65 k-ohm")
+ic2=25/1.65
+format(6)
+disp(ic2,"Therefore,  I_C2(in mA) =")
+ib2=15.15/30
+disp(ib2,"I_B2(in mA) =")
+mul=0.505*0.55
+disp(mul,"Therefore,  I_B2*R_C1(in V) =")
+mull=15.15*0.22
+disp(mull,"and  I_C2*R_C2(in V) =")
+disp("The highest level of V_EN1 is V1 given by,")
+v1=25-0.277-0.6-0.3+0.5
+disp(v1,"V1(in V) = V_CC1 - I_B2*R_C1 - V_BE2 - V_CE(sat) + V_Y =")
+disp("The lowest level of V_EN1 is,")
+ven1=20-0.7
+disp(ven1,"V_EN1(t_-1)(in V) = V_BB - V0 =")
+vcn1=20-0.7+0.3
+disp(vcn1,"V_CN1(t_-1)(in V) = V_BB - V0 - V_CE(sat) =")
+format(7)
+vcn=25-0.277
+disp(vcn,"V_CN1(t_+1)(in V) = V_CC1 - I_B2*R_C1 =")
+disp("V_CN1 = V_BN2")
+ven2=19.6-0.5
+disp(ven2,"V_EN(t_-1)(in V) = V_BN2(t_-1) - V_Y =")
+ven=25-0.277-0.6
+disp(ven,"V_EN(t_+1)(in V) = V_CC1 - I_B2*R_C1 - V_BE2 =")
+vd=24.123-19.1
+disp(vd,"V_D(in V) = V_EN2(t_+1) - V_EN2(t_-1) =")
+disp("(b) The frequency of oscillations,")
+disp("f = 1/T = 1/T1+T2")
+t1=((3.3*0.1*10^-3)*log(24.323/19.5))*10^6
+format(6)
+disp(t1,"T1(in usec) = R_e1*C*ln(V1/V_BB-V_Y) =")
+disp("and  T2 = T1  as  R_e1 = R_e2")
+t=(2*72.93)*10^-3
+format(7)
+disp(t,"Therefore,  T(in ms) = 2*T1 =")
+f=1/0.1458
+format(7)
+disp(f,"Therefore,  f(in kHz) = 1/T =")