initial commit / add all books

12 files changed, 240 insertions, 0 deletions

diff --git a/68/CH4/EX4.1/ex1.sce b/68/CH4/EX4.1/ex1.sce
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+// Example 4.1 : To determine operating point parameters

+L_min=0.4*10^-6; // (m)

+t_ox=8*10^-9; // (s)

+u_n=450*10^-4; // (A/V^2)

+V_t=0.7; // (V)

+e_ox=3.45*10^-11; 

+

+// 4.1a

+C_ox=e_ox/t_ox;

+disp(C_ox,"C_ox (F/m^2)")

+k_n=u_n*C_ox;

+disp(k_n,"k_n (A/V^2)")

+

+// 4.1b 

+// Operation in saturation region

+W=8*10^-6; // (m)

+L=0.8*10^-6; // (m)

+i_D=100*10^-6; // (A)

+V_GS=sqrt(2*L*i_D/(k_n*W)) +V_t;

+disp(V_GS,"V_GS (V)")

+V_DSmin=V_GS-V_t;

+disp(V_DSmin,"V_DSmin (V)")

+

+// 4.1c

+// MOSFET in triode region

+r_DS=1000; // (ohm)

+V_GS=1/(k_n*(W/L)*r_DS)+V_t;

+disp(V_GS,"V_GS (V)")
\ No newline at end of file
diff --git a/68/CH4/EX4.10/ex10.sce b/68/CH4/EX4.10/ex10.sce
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+// Example 4.10 : Small signal analysis

+V_t=1.5; // (V)

+K=0.00025;//K= k_nW/L (A/V^2)

+V_A=50; // (V)

+I_D=1.06*10^-3; // (A)

+V_D=4.4; // (V)

+R_D=10000; // (ohm)

+R_L=10000; // (ohm)

+V_GS=V_D;

+g_m=K*(V_GS-V_t);

+r_o=V_A/I_D;

+A_v=-g_m*(R_L*R_D*r_o)/(R_D*R_L+R_D*r_o+R_L*r_o);

+disp(A_v,"Voltage gain (V/V)")

+R_G=10*10^6; //(ohm)

+// i_i=v_i*(1-A_v)/R_G

+R_in=R_G/(1-(A_v));

+disp(R_in,"Input resistance (ohm)")

+// v_DSmin=v_GSmin-V_t

+v_i=V_t/(1+(-A_v)); // - sign to make A_v positive

+disp(v_i," Largest allowable input signal (V)")
\ No newline at end of file
diff --git a/68/CH4/EX4.11/ex4_11.sce b/68/CH4/EX4.11/ex4_11.sce
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+// Example 4.11: To determine all parameters of transistor amplifier

+v_o=90; // (V)

+v_i=9; // (V)

+R_sig=100*10^3; // (ohm)

+R_L=10*10^3; // (ohm)

+v_sig=10; // (V)

+A_vo=v_o/v_i;

+disp(A_vo,"A_vo (V/V)")

+G_vo=v_o/A_vo;

+disp(G_vo,"G_vo (V/V)")

+R_i=G_vo*R_sig/(A_vo-G_vo)

+disp(R_i,"R_i")

+disp("assume R_L = 10 kilo ohm is connected")

+v_o=70; // (V)

+v_i=8; // (V)

+A_v=v_o/v_i;

+disp(A_v,"A_v (V/V)")

+G_v=v_o/A_vo;

+disp(G_v,"G_v (V/V)")

+R_o=R_L*(A_vo-A_v)/A_v;

+disp(R_o,"R_o (ohm)")

+R_out=R_L*(G_vo-G_v)/G_v;

+disp(R_out,"R_out (ohm)")

+R_in=(v_i*100)/(v_sig-v_i);

+disp(R_in,"R_in (ohm)")

+G_m=A_vo/R_o;

+disp(G_m,"G_m (mho)")

+A_i=A_v*R_in/R_L;

+disp(A_i,"A_i (V/V)")

+R_inL0=R_sig/((1+R_sig/R_i)*(R_out/R_o)-1); // R_in|R_L=0 (ohm)

+disp(R_inL0,"R_in at R_L=0")

+A_is=A_vo*R_inL0/R_o;

+disp(A_is,"A_is (A/A)")
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diff --git a/68/CH4/EX4.12/ex4_12.sce b/68/CH4/EX4.12/ex4_12.sce
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+// Example 4.12 : Midband gain and upper 3dB frequency

+R_sig= 100*10^3; // (ohm)

+R_G=4.7*10^6; // (ohm)

+R_D=15*10^3; // (ohm)

+R_l=15*10^3; // (ohm)

+g_m=1*10^-3; // (mho)

+r_o=150*10^3; // (ohm)

+C_gs=1*10^-12; // (F)

+C_gd=0.4*10^-12; // (F)

+R_L= 1/(1/r_o + 1/R_D + 1/R_l)

+A_M=R_G/(R_G + R_sig)*g_m*R_L;

+disp(A_M,"midband gain A_M (V/V)")

+C_eq=(1+g_m*R_L)*C_gd;

+C_in=C_gs+C_eq;

+f_H=(R_G+R_sig)/(2*%pi*C_in*R_sig*R_G);

+disp(f_H,"f_H (Hz)")
\ No newline at end of file
diff --git a/68/CH4/EX4.13/ex4_13.sce b/68/CH4/EX4.13/ex4_13.sce
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+// Example 4.13 : Coupling capacitor values

+R_G=4.7*10^6; // (ohm)

+R_D=15*10^3; // (ohm)

+R_L=15*10^3; // (ohm)

+R_sig=100*10^3; // (ohm)

+g_m=1*10^-3; // (mho)

+f_L=100; // (Hz)

+C_S=g_m/(2*%pi*f_L)

+disp(C_S,"C_S (F)")

+f_P2=1/(2*%pi*C_S/g_m);

+f_P1=10; // (Hz)

+f_P2=10; // (Hz)

+C_C1=1/(2*%pi*(R_G+R_sig)*10)

+disp(C_C1,"C_C1 (F)")

+C_C2=1/(2*%pi*(R_D+R_L)*10)

+disp(C_C2,"C_C2 (F)")
\ No newline at end of file
diff --git a/68/CH4/EX4.2/ex2.sce b/68/CH4/EX4.2/ex2.sce
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+// Example 4.2: Design of given circuit to obtain I_D=0.4mA and V_D=0.5V

+// NMOS transistor is operating in saturation region

+I_D=0.4*10^-3; // (A)

+V_D=0.5; // (V)

+V_t=0.7; // (V)

+uC_n=100*10^-6; // (A/V^2)

+L=1*10^-6; // (m)

+W=32*10^-6; // (m)

+V_SS=-2.5; // (V)

+V_DD=2.5; // (V)

+V_OV=sqrt(I_D*2*L/(uC_n*W));

+V_GS=V_t+V_OV;

+disp(V_GS,"V_t (V)")

+V_S=-1.2; // (V)

+R_S=(V_S-V_SS)/I_D;

+disp(R_S,"R_S (ohm)")

+V_D=0.5; // (V)

+R_D=(V_DD-V_D)/I_D;

+disp(R_D,"R_D (ohm)")
\ No newline at end of file
diff --git a/68/CH4/EX4.3/ex3.sce b/68/CH4/EX4.3/ex3.sce
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+// Example 4.3: Design of given circuit to obtain I_D=80uA

+// FET is operating in saturation region

+I_D=80*10^-6; // (A)

+V_t=0.6; // (V)

+uC_n=200*10^-6; // (A/V^2)

+L=0.8*10^-6; // (m)

+W=4*10^-6; // (m)

+V_DD=3; // (V)

+V_OV=sqrt(2*I_D/(uC_n*(W/L)));

+V_GS=V_t+V_OV;

+V_DS=V_GS;

+V_D=V_DS;

+disp(V_D,"V_D (V)")

+R=(V_DD-V_D)/I_D;

+disp(R,"R (ohm)")
\ No newline at end of file
diff --git a/68/CH4/EX4.4/ex4.sce b/68/CH4/EX4.4/ex4.sce
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+++ b/68/CH4/EX4.4/ex4.sce
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+// Example 4.4 :  Design of given circuit to obtain V_D=0.1V

+// MOSFET is operating in triode region

+V_D=0.1; // (V)

+V_DD=5; // (V)

+V_t=1; // (V)

+K=1*10^-3; // K=k'_n(W/L)

+V_GS=5; // (V)

+V_DS=0.1; // (V)

+I_D=K*((V_GS-V_t)*V_DS-(V_DS^2)/2);

+disp(I_D,"I_D (A)")

+R_D=(V_DD-V_D)/I_D;

+disp(R_D,"R_D (ohm)")

+r_DS=V_DS/I_D;

+disp(r_DS,"r_DS (ohm)")
\ No newline at end of file
diff --git a/68/CH4/EX4.5/ex5.sce b/68/CH4/EX4.5/ex5.sce
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+// Example 4.5: To determine all node voltages and currents through all branches

+V_t=1; // (V)

+K=1*10^-3; // K=k'_n(W/L)

+V_DD=10; // (V)

+R_G1=10*10^6; // (ohm)

+R_G2=10*10^6; // (ohm)

+R_D=6*10^3; // (ohm)

+R_S=6*10^3; // (ohm)

+p=poly([8 -25 18],'I_D', 'coeff');

+I_D=roots(p);

+// I_D=0.89mA will result in transistor cut off hence we take the other root of the equation

+V_G=V_DD*R_G2/(R_G2+R_G1);

+I_D=I_D(1)*10^-3;

+disp(I_D,"I_D (A)")

+V_S=I_D*R_S;

+disp(V_S,"V_S (V)")

+V_GS=V_G-V_S;

+disp(V_GS,"V_GS (V)")

+V_D=V_DD-R_D*I_D;

+disp(V_D,"V_D (V)")

+// V_D>V_G-V_t the transistor is operating in saturation as initially assumed
\ No newline at end of file
diff --git a/68/CH4/EX4.6/ex6.sce b/68/CH4/EX4.6/ex6.sce
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+// Example 4.6;  Design of given circuit to obtain I_D=0.5mA and V_D=3V

+// MOSFET is in saturation

+V_DD=5; // (V)

+V_D=3; // (V)

+I_D=0.5*10^-3; // (A)

+V_t=-1; // (V)

+K=1*10^-3; // K=k'_n(W/L)

+V_OV=sqrt(2*I_D/K);

+V_GS=V_t+(-V_OV)

+R_D=V_D/I_D;

+V_Dmax=V_D-V_t; // - sign as magnitude of V_t is considered

+R_D=V_Dmax/I_D;

+disp(R_D,"R_D (ohm)")
\ No newline at end of file
diff --git a/68/CH4/EX4.7/ex4_7.sce b/68/CH4/EX4.7/ex4_7.sce
new file mode 100755
index 000000000..f2bacf1b7
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+// Example 4.7: To determine drain currents and output voltage

+K_n =1*10^-3; // K_n=k_n*W_n/L_n (A/V^2)

+K_p = 1*10^-3; // K_p=k_p*W_p/L_p (A/V^2)

+V_tn= 1; // (V)

+V_tp= -1; // (V)

+V_I=-2.5:2.5:2.5; // (V)

+V_DD=2.5; // (V)

+R=10;// (kilo ohm)

+// For V_I=0

+I_DP=(K_p*(V_DD-V_tn)^2)/2;

+I_DN=I_DP;

+disp(I_DP,I_DN,"I_DP (A) and I_DN (A) for V_I=0V")

+disp(0,"V_O for V_I =0V")

+// For V_I=2.5V

+// I_DN=K_N(V_GS-V_tn)V_DS

+// I_DN=v_O/R

+// Solving the two equations we get

+I_DN=0.244*10^-3; // (V)

+V_O=-2.44; // (V)

+disp(I_DN,V_O,"V_O and I_DN for V_I=2.5V")

+// For V_I=-2.5V Q_N is cut off

+I_DP=2.44*10^-3; // (A)

+V_O=2.44; // (V)

+disp(0,I_DP,V_O,"V_O(V), I_DP (A) and I_DN (A) for V_I=-2.5V")
\ No newline at end of file
diff --git a/68/CH4/EX4.9/ex4_9.sce b/68/CH4/EX4.9/ex4_9.sce
new file mode 100755
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+// Example 4.9 : Design of given circuit to obtain I_D=0.5mA

+I_d=0.5*10^-3; // (A)

+I_S=0.5*10^-3; // (A)

+V_t=1:0.5:1.5; // (V)

+K_n=1*10^-3; // K_n=k_n*W/L (A/V^2)

+V_DD=15; // (V)

+V_D=10; // (V)

+V_S=5; // (V)

+R_D=(V_DD-V_D)/I_d;

+R_S=V_S/I_S;

+V_OV=sqrt(I_d*2/K_n);

+V_GS=V_t+V_OV;

+V_G=V_S+V_GS;

+// V_t=1.5V

+// I_D=K(V_GS-V_t)^2/2

+// 7=V_GS+10I_D

+// solving above equations 

+I_D=0.455*10^-3;

+deltaI_D=I_D-I_d; // Change in I_D (A)

+change=deltaI_D*100/I_d; // Change in %

+disp(change,"Change in I_D (%)")
\ No newline at end of file