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+// Example 4.2: Design of given circuit to obtain I_D=0.4mA and V_D=0.5V
+// NMOS transistor is operating in saturation region
+I_D=0.4*10^-3; // (A)
+V_D=0.5; // (V)
+V_t=0.7; // (V)
+uC_n=100*10^-6; // (A/V^2)
+L=1*10^-6; // (m)
+W=32*10^-6; // (m)
+V_SS=-2.5; // (V)
+V_DD=2.5; // (V)
+V_OV=sqrt(I_D*2*L/(uC_n*W));
+V_GS=V_t+V_OV;
+disp(V_GS,"V_t (V)")
+V_S=-1.2; // (V)
+R_S=(V_S-V_SS)/I_D;
+disp(R_S,"R_S (ohm)")
+V_D=0.5; // (V)
+R_D=(V_DD-V_D)/I_D;
+disp(R_D,"R_D (ohm)")
+\ No newline at end of file