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+// Example 4.3: Design of given circuit to obtain I_D=80uA
+// FET is operating in saturation region
+I_D=80*10^-6; // (A)
+V_t=0.6; // (V)
+uC_n=200*10^-6; // (A/V^2)
+L=0.8*10^-6; // (m)
+W=4*10^-6; // (m)
+V_DD=3; // (V)
+V_OV=sqrt(2*I_D/(uC_n*(W/L)));
+V_GS=V_t+V_OV;
+V_DS=V_GS;
+V_D=V_DS;
+disp(V_D,"V_D (V)")
+R=(V_DD-V_D)/I_D;
+disp(R,"R (ohm)")
+\ No newline at end of file