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author | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
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committer | prashantsinalkar | 2017-10-10 12:27:19 +0530 |
commit | 7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch) | |
tree | dbb9e3ddb5fc829e7c5c7e6be99b2c4ba356132c /3754/CH10/EX10.15/10_15.sce | |
parent | b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff) | |
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initial commit / add all books
Diffstat (limited to '3754/CH10/EX10.15/10_15.sce')
-rw-r--r-- | 3754/CH10/EX10.15/10_15.sce | 22 |
1 files changed, 22 insertions, 0 deletions
diff --git a/3754/CH10/EX10.15/10_15.sce b/3754/CH10/EX10.15/10_15.sce new file mode 100644 index 000000000..b51377a6e --- /dev/null +++ b/3754/CH10/EX10.15/10_15.sce @@ -0,0 +1,22 @@ +clear//
+
+//Variables
+
+un = 1350 //mobility of electrons (in centimeter-square per volt-second)
+up = 480 //mobility of holes (in centimeter-square per volt-second)
+ni = 1.52 * 10**10 //intrinsic concentration (in per cubic-centimeter)
+Nsi = 4.96 * 10**22 //concentration of silicon (in per cubic-centimeter)
+q = 1.6 * 10**-19 //charge on electron (in Coulomb)
+
+//Calculation
+
+sigi = q * ni * (un + up) //conductivity of intrinsic silicon (in per ohm-centimeter)
+ND = Nsi/(50 * 10**6) //Number of donor atoms (per cubic-centimeter)
+n = ND //NUmber of free electrons (in per cubic-centimeter)
+p = ni**2/n //number of holes (in per cubic-centimeter)
+sig = q * n * un //conductivity of doped silicon (in per ohm-centimeter)
+p = 1/sig //resistivity (in ohm-centimeter)
+
+//Result
+
+printf("\n Resistivity of doped silicon is %0.2f ohm-cm.",p)
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