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authorprashantsinalkar2017-10-10 12:27:19 +0530
committerprashantsinalkar2017-10-10 12:27:19 +0530
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+clear//
+
+//Variables
+
+un = 1350 //mobility of electrons (in centimeter-square per volt-second)
+up = 480 //mobility of holes (in centimeter-square per volt-second)
+ni = 1.52 * 10**10 //intrinsic concentration (in per cubic-centimeter)
+Nsi = 4.96 * 10**22 //concentration of silicon (in per cubic-centimeter)
+q = 1.6 * 10**-19 //charge on electron (in Coulomb)
+
+//Calculation
+
+sigi = q * ni * (un + up) //conductivity of intrinsic silicon (in per ohm-centimeter)
+ND = Nsi/(50 * 10**6) //Number of donor atoms (per cubic-centimeter)
+n = ND //NUmber of free electrons (in per cubic-centimeter)
+p = ni**2/n //number of holes (in per cubic-centimeter)
+sig = q * n * un //conductivity of doped silicon (in per ohm-centimeter)
+p = 1/sig //resistivity (in ohm-centimeter)
+
+//Result
+
+printf("\n Resistivity of doped silicon is %0.2f ohm-cm.",p)