From 7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 Mon Sep 17 00:00:00 2001
From: prashantsinalkar
Date: Tue, 10 Oct 2017 12:27:19 +0530
Subject: initial commit / add all books

---
 3754/CH10/EX10.15/10_15.sce | 22 ++++++++++++++++++++++
 1 file changed, 22 insertions(+)
 create mode 100644 3754/CH10/EX10.15/10_15.sce

(limited to '3754/CH10/EX10.15/10_15.sce')

diff --git a/3754/CH10/EX10.15/10_15.sce b/3754/CH10/EX10.15/10_15.sce
new file mode 100644
index 000000000..b51377a6e
--- /dev/null
+++ b/3754/CH10/EX10.15/10_15.sce
@@ -0,0 +1,22 @@
+clear//
+
+//Variables
+
+un = 1350                             //mobility of electrons (in centimeter-square per volt-second)
+up = 480                              //mobility of holes (in centimeter-square per volt-second)
+ni = 1.52 * 10**10                    //intrinsic concentration (in per cubic-centimeter)
+Nsi = 4.96 * 10**22                   //concentration of silicon (in per cubic-centimeter)
+q = 1.6 * 10**-19                     //charge on electron (in Coulomb) 
+
+//Calculation
+
+sigi = q * ni * (un + up)             //conductivity of intrinsic silicon (in per ohm-centimeter)
+ND = Nsi/(50 * 10**6)                 //Number of donor atoms (per cubic-centimeter)
+n = ND                                //NUmber of free electrons (in per cubic-centimeter)
+p = ni**2/n                           //number of holes (in per cubic-centimeter)
+sig = q * n * un                      //conductivity of doped silicon (in per ohm-centimeter)
+p = 1/sig                             //resistivity (in ohm-centimeter)
+
+//Result
+
+printf("\n Resistivity of doped silicon is  %0.2f  ohm-cm.",p)
-- 
cgit