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clear//
//Variables
un = 1350 //mobility of electrons (in centimeter-square per volt-second)
up = 480 //mobility of holes (in centimeter-square per volt-second)
ni = 1.52 * 10**10 //intrinsic concentration (in per cubic-centimeter)
Nsi = 4.96 * 10**22 //concentration of silicon (in per cubic-centimeter)
q = 1.6 * 10**-19 //charge on electron (in Coulomb)
//Calculation
sigi = q * ni * (un + up) //conductivity of intrinsic silicon (in per ohm-centimeter)
ND = Nsi/(50 * 10**6) //Number of donor atoms (per cubic-centimeter)
n = ND //NUmber of free electrons (in per cubic-centimeter)
p = ni**2/n //number of holes (in per cubic-centimeter)
sig = q * n * un //conductivity of doped silicon (in per ohm-centimeter)
p = 1/sig //resistivity (in ohm-centimeter)
//Result
printf("\n Resistivity of doped silicon is %0.2f ohm-cm.",p)
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