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authorprashantsinalkar2017-10-10 12:27:19 +0530
committerprashantsinalkar2017-10-10 12:27:19 +0530
commit7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch)
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parentb1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff)
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+clc;
+clear;
+Na=10^15 //doping densities in cm^-3
+Nd=10^17 //in cm^-3
+V=0.5 //in V
+e=1.6*10^-19 //in J
+nn0=10^17 //in cm^-3
+ni=1.5*10^10 //in cm^-3
+Si_bandgap=1.1 //bandgap of silicon in eV
+Const=0.0259 //constant value for kT/e in J
+
+//Calculation
+//a)
+pn0=ni^2/nn0 //in cm^-3
+pn=pn0*exp((V)/Const)
+
+//b)
+
+Vbi=0.6949 //breakdown voltage in V
+Vp=Vbi-V //potential already present in V
+Vz=Si_bandgap-Vp //Zener breakdown voltage in V
+
+mprintf("a)\n")
+mprintf("Total concentration of holes= %.2e cm^-3\n",pn)
+mprintf("b)\n")
+mprintf("Additional voltage required= %.4f V",Vz)