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authorprashantsinalkar2017-10-10 12:27:19 +0530
committerprashantsinalkar2017-10-10 12:27:19 +0530
commit7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch)
treedbb9e3ddb5fc829e7c5c7e6be99b2c4ba356132c /3636/CH4
parentb1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff)
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-rw-r--r--3636/CH4/EX4.1/Ex4_1.sce10
-rw-r--r--3636/CH4/EX4.1/Ex4_1.txt1
-rw-r--r--3636/CH4/EX4.2/Ex4_2.sce12
-rw-r--r--3636/CH4/EX4.2/Ex4_2.txt1
-rw-r--r--3636/CH4/EX4.3/Ex4_3.sce20
-rw-r--r--3636/CH4/EX4.3/Ex4_3.txt1
-rw-r--r--3636/CH4/EX4.4/Ex4_4.sce17
-rw-r--r--3636/CH4/EX4.4/Ex4_4.txt6
-rw-r--r--3636/CH4/EX4.6/Ex4_6.sce14
-rw-r--r--3636/CH4/EX4.6/Ex4_6.txt4
-rw-r--r--3636/CH4/EX4.7/Ex4_7.sce38
-rw-r--r--3636/CH4/EX4.7/Ex4_7.txt10
-rw-r--r--3636/CH4/EX4.8/Ex4_8.sce29
-rw-r--r--3636/CH4/EX4.8/Ex4_8.txt6
-rw-r--r--3636/CH4/EX4.9/Ex4_9.sce30
-rw-r--r--3636/CH4/EX4.9/Ex4_9.txt6
16 files changed, 205 insertions, 0 deletions
diff --git a/3636/CH4/EX4.1/Ex4_1.sce b/3636/CH4/EX4.1/Ex4_1.sce
new file mode 100644
index 000000000..cd601f62e
--- /dev/null
+++ b/3636/CH4/EX4.1/Ex4_1.sce
@@ -0,0 +1,10 @@
+clc;
+clear;
+del_n0=10^16 //concentration of electrons in cm^-3
+tau_n0=5 //excess carrier lifetime in micro-s
+t=1 //time in micro-s
+
+//Calculation
+del_nt=del_n0*exp(-t/tau_n0)
+
+mprintf("excess electron concentration= %.3g cm^-3",del_nt)
diff --git a/3636/CH4/EX4.1/Ex4_1.txt b/3636/CH4/EX4.1/Ex4_1.txt
new file mode 100644
index 000000000..13d378bab
--- /dev/null
+++ b/3636/CH4/EX4.1/Ex4_1.txt
@@ -0,0 +1 @@
+ excess electron concentration= 8.19e+15 cm^-3 \ No newline at end of file
diff --git a/3636/CH4/EX4.2/Ex4_2.sce b/3636/CH4/EX4.2/Ex4_2.sce
new file mode 100644
index 000000000..9dbeef87b
--- /dev/null
+++ b/3636/CH4/EX4.2/Ex4_2.sce
@@ -0,0 +1,12 @@
+clc;
+clear;
+del_n0=10^16 //concentration of electrons in cm^-3
+tau_n0=5 //excess carrier lifetime in s
+tau_n01=5*10^-6 //excess carrier lifetime in micro-s
+t=5 //in micro-s
+
+//Calculation
+del_nt=del_n0*exp(-t/tau_n0) //in cm^-3
+Rn1=del_nt/tau_n01
+
+mprintf("Recombination rate= %.1e cm^-3 s^-1",Rn1)
diff --git a/3636/CH4/EX4.2/Ex4_2.txt b/3636/CH4/EX4.2/Ex4_2.txt
new file mode 100644
index 000000000..ef81a2881
--- /dev/null
+++ b/3636/CH4/EX4.2/Ex4_2.txt
@@ -0,0 +1 @@
+ Recombination rate= 7.4e+20 cm^-3 s^-1 \ No newline at end of file
diff --git a/3636/CH4/EX4.3/Ex4_3.sce b/3636/CH4/EX4.3/Ex4_3.sce
new file mode 100644
index 000000000..1dc7ca1c2
--- /dev/null
+++ b/3636/CH4/EX4.3/Ex4_3.sce
@@ -0,0 +1,20 @@
+clc;
+clear;
+Nd=10^15 //dopant concentration in cm^-3
+Na=0 //in cm^-3
+tau_p0=10*10^-7 //in s
+tau_n0=10*10^-7 //in s
+ni=1.5*10^10 //in cm^-3
+deln=10^14 //in cm^-3
+delp=10^14 //in cm^-3
+nt=1.5*10^15 //in cm^-3
+pt=1.5*10^15 //in cm^-3
+
+//Calculation
+n0=Nd //in cm^-3
+p0=ni^2/Nd //in cm^-3
+n=n0+deln //in cm^-3
+p=p0+delp //in cm^-3
+R=((n*p)-ni^2)/(tau_n0*(n+p))
+
+mprintf("Recombination rate= %1.2e cm^-3 s^-1",R)
diff --git a/3636/CH4/EX4.3/Ex4_3.txt b/3636/CH4/EX4.3/Ex4_3.txt
new file mode 100644
index 000000000..e56c86e8a
--- /dev/null
+++ b/3636/CH4/EX4.3/Ex4_3.txt
@@ -0,0 +1 @@
+ Recombination rate= 9.17e+19 cm^-3 s^-1 \ No newline at end of file
diff --git a/3636/CH4/EX4.4/Ex4_4.sce b/3636/CH4/EX4.4/Ex4_4.sce
new file mode 100644
index 000000000..a29d9b8b8
--- /dev/null
+++ b/3636/CH4/EX4.4/Ex4_4.sce
@@ -0,0 +1,17 @@
+clc;
+clear;
+n0=5*10^15 //carrier concentration in cm^-3
+ni=10^10 //in cm^-3
+p0=2*10^4 //in cm^-3
+deln=5*10^13 //excess carriers in semiconductor in cm^-3
+delp=5*10^13 //in cm^-3
+Const=0.026 //constant value for kT/e in V
+
+//Calculation
+delE1=Const*log(n0/ni)
+delE2=Const*log((n0+deln)/ni)
+delE3=Const*log((p0+delp)/ni)
+
+mprintf("1)\nposition of the Fermi level at thermal equilibrium= %0.4f eV\n",delE1)
+mprintf("2)\nquasi-Fermi level for electrons in non-equilibrium= %0.4f eV\n",delE2)
+mprintf("3)\nquasi-Fermi level for holes in non-equilibrium= %0.4f eV",delE3)
diff --git a/3636/CH4/EX4.4/Ex4_4.txt b/3636/CH4/EX4.4/Ex4_4.txt
new file mode 100644
index 000000000..7885212c8
--- /dev/null
+++ b/3636/CH4/EX4.4/Ex4_4.txt
@@ -0,0 +1,6 @@
+ 1)
+position of the Fermi level at thermal equilibrium= 0.3412 eV
+2)
+quasi-Fermi level for electrons in non-equilibrium= 0.3414 eV
+3)
+quasi-Fermi level for holes in non-equilibrium= 0.2214 eV \ No newline at end of file
diff --git a/3636/CH4/EX4.6/Ex4_6.sce b/3636/CH4/EX4.6/Ex4_6.sce
new file mode 100644
index 000000000..986565b3c
--- /dev/null
+++ b/3636/CH4/EX4.6/Ex4_6.sce
@@ -0,0 +1,14 @@
+clc;
+clear;
+l=1.8 //distance between plates in cm
+E=3/2 //in V
+t=0.6*10^-3 //time taken by the pulse in s
+del_t=236*10^-6 //pulse width in s
+
+//Calculation
+vd=l/t //in cm/s
+myu_p=vd/E
+Dp=(del_t*l)^2/(16*t^3)
+
+mprintf("1)\nHole mobility= %i cm^2/Vs\n",myu_p)
+mprintf("2)\nDiffusion coefficient= %2.2f cm^2/s",Dp)
diff --git a/3636/CH4/EX4.6/Ex4_6.txt b/3636/CH4/EX4.6/Ex4_6.txt
new file mode 100644
index 000000000..2a9636e6e
--- /dev/null
+++ b/3636/CH4/EX4.6/Ex4_6.txt
@@ -0,0 +1,4 @@
+1)
+Hole mobility= 2000 cm^2/Vs
+2)
+Diffusion coefficient= 52.22 cm^2/s \ No newline at end of file
diff --git a/3636/CH4/EX4.7/Ex4_7.sce b/3636/CH4/EX4.7/Ex4_7.sce
new file mode 100644
index 000000000..26ecf12e3
--- /dev/null
+++ b/3636/CH4/EX4.7/Ex4_7.sce
@@ -0,0 +1,38 @@
+clc;
+clear;
+delp=4*10^14 //excess EHP in cm^-3
+deln=4*10^14 //excess EHP in cm^-3
+n0=10^15 //donor atoms in cm^-3
+p0=0 //in cm^-3
+t=0.5*10^-6 //hole-lifetime in s
+myu_n=1200 //mobility of electron in cm^2/V*s
+myu_p=400 //mobility of hole in cm^2/V*s
+q=1.6*10^-19 //electron charge in eV
+ni=1.5*10^10 //in cm^-3
+Const=0.0259 //constant value for kT in eV
+
+//Calculation
+//a)
+gop=delp/t
+
+//b)
+rho_0=(q*n0*myu_n)^-1 //Before illumination
+n=n0+deln //in cm^-3
+p=p0+delp //in cm^-3
+rho=1/(q*((myu_n*n)+(myu_p*p)))//conductivity
+rho1=q*myu_p*delp //in mho/cm
+Pcond=(rho*rho1)*100
+
+//c)
+delE_e=Const*log(n/ni)
+delE_h=Const*log(p/ni)
+
+mprintf("a)\n")
+mprintf("photo generation rate= %g EHPs/cm^3s\n",gop)
+mprintf("b)\n")
+mprintf("resistivity before illumination= %1.2f ohm-cm\n",rho_0)
+mprintf("resistvity after illumination= %1.3f ohm-cm\n",rho)
+mprintf("percent of conductivity= %1.2f percent\n",Pcond) //The answers vary due to round off error
+mprintf("c)\n")
+mprintf("quasi Fermi level due to electron=Efi+%0.3f eV\n",delE_e)
+mprintf("quasi Fermi level due to holes=Efi-%0.3f eV\n",delE_h)
diff --git a/3636/CH4/EX4.7/Ex4_7.txt b/3636/CH4/EX4.7/Ex4_7.txt
new file mode 100644
index 000000000..562db4636
--- /dev/null
+++ b/3636/CH4/EX4.7/Ex4_7.txt
@@ -0,0 +1,10 @@
+ a)
+photo generation rate= 8e+20 EHPs/cm^3s
+b)
+resistivity before illumination= 5.21 ohm-cm
+resistvity after illumination= 3.397 ohm-cm
+percent of conductivity= 8.70 percent
+c)
+quasi Fermi level due to electron=Efi+0.296 eV
+quasi Fermi level due to holes=Efi-0.264 eV
+ \ No newline at end of file
diff --git a/3636/CH4/EX4.8/Ex4_8.sce b/3636/CH4/EX4.8/Ex4_8.sce
new file mode 100644
index 000000000..e06753442
--- /dev/null
+++ b/3636/CH4/EX4.8/Ex4_8.sce
@@ -0,0 +1,29 @@
+clc;
+clear;
+n0=10^16 //donor atoms in cm^-3
+q=1.6*10^-19 //electron charge in J
+ni=1.5*10^10 //in cm^-3
+Nd=10^16 //Donors added to silicon to make it n-type) in cm^-3
+GT=2.25*10^10 //Thermal generation rate of carriers under equilibrium cm^-3/s
+gop=10^21 //in cm^-3/s
+tau_n=10^-6 //in s
+tau_t=2.5*10^-3 //transit time in s
+V=1 //in V
+
+//Calculation
+//a)
+alpha_r=GT/ni^2
+tau_p=(alpha_r*n0)^-1
+
+//b)
+delp=gop*tau_n
+
+//c)
+delI=(q*V*gop*tau_n)/tau_t
+
+mprintf("a)\n")
+mprintf("lifetime of both type of carriers= %g s\n",tau_p)
+mprintf("b)\n")
+mprintf("excess carrier concentration= %g cm^-3\n",delp)
+mprintf("c)\n")
+mprintf("Induced change in current= %.3f A",delI)
diff --git a/3636/CH4/EX4.8/Ex4_8.txt b/3636/CH4/EX4.8/Ex4_8.txt
new file mode 100644
index 000000000..0ca88fc8f
--- /dev/null
+++ b/3636/CH4/EX4.8/Ex4_8.txt
@@ -0,0 +1,6 @@
+ a)
+lifetime of both type of carriers= 1e-06 s
+b)
+excess carrier concentration= 1e+15 cm^-3
+c)
+Induced change in current= 0.064 A \ No newline at end of file
diff --git a/3636/CH4/EX4.9/Ex4_9.sce b/3636/CH4/EX4.9/Ex4_9.sce
new file mode 100644
index 000000000..7827b9d30
--- /dev/null
+++ b/3636/CH4/EX4.9/Ex4_9.sce
@@ -0,0 +1,30 @@
+clc;
+clear;
+E1000=8.48*10^5 //Current density for 1000 V in A/cm^2
+delE=0.1 //in eV
+q=1.6*10^-19 //electron charge in eV
+ni=1.5*10^10 //in cm^-3
+Nd=10^16 //Donors added to silicon to make it n-type) in cm^-3
+gop=10^19 //in cm^-3/s
+tau=10^-5 //in s
+Const=0.0259 //constant value for kT in eV
+
+//Calculation
+//a)
+E10000=E1000
+
+//b)
+n0=ni*exp(delE/Const)
+
+//c)
+deln=gop*tau //in cm^-3
+n=n0 //in cm^-3
+p=deln //in cm^-3s
+delE_np=Const*log((n*p)/ni^2)
+
+mprintf("a)\n")
+mprintf("Current density for 1000V potential= %1.2e A/cm^2\n",E10000)
+mprintf("b)\n")
+mprintf("Doping concentration= %1.1e cm^-3\n",n0) //The answer provided in the textbook is wrong"
+mprintf("c)\n")
+mprintf("Energy gap= %0.4f eV",delE_np) //The answer provided in the textbook is wrong"
diff --git a/3636/CH4/EX4.9/Ex4_9.txt b/3636/CH4/EX4.9/Ex4_9.txt
new file mode 100644
index 000000000..4ed6be264
--- /dev/null
+++ b/3636/CH4/EX4.9/Ex4_9.txt
@@ -0,0 +1,6 @@
+ a)
+Current density for 1000V potential= 8.48e+05 A/cm^2
+b)
+Doping concentration= 7.1e+11 cm^-3
+c)
+Energy gap= 0.3280 eV \ No newline at end of file
generated by cgit (git 2.34.1) at 2024-12-19 14:47:19 +0000