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diff --git a/3636/CH4/EX4.9/Ex4_9.sce b/3636/CH4/EX4.9/Ex4_9.sce
new file mode 100644
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+++ b/3636/CH4/EX4.9/Ex4_9.sce
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+clc;
+clear;
+E1000=8.48*10^5 //Current density for 1000 V in A/cm^2
+delE=0.1 //in eV
+q=1.6*10^-19 //electron charge in eV
+ni=1.5*10^10 //in cm^-3
+Nd=10^16 //Donors added to silicon to make it n-type) in cm^-3
+gop=10^19 //in cm^-3/s
+tau=10^-5 //in s
+Const=0.0259 //constant value for kT in eV
+
+//Calculation
+//a)
+E10000=E1000
+
+//b)
+n0=ni*exp(delE/Const)
+
+//c)
+deln=gop*tau //in cm^-3
+n=n0 //in cm^-3
+p=deln //in cm^-3s
+delE_np=Const*log((n*p)/ni^2)
+
+mprintf("a)\n")
+mprintf("Current density for 1000V potential= %1.2e A/cm^2\n",E10000)
+mprintf("b)\n")
+mprintf("Doping concentration= %1.1e cm^-3\n",n0) //The answer provided in the textbook is wrong"
+mprintf("c)\n")
+mprintf("Energy gap= %0.4f eV",delE_np) //The answer provided in the textbook is wrong"