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authorprashantsinalkar2017-10-10 12:27:19 +0530
committerprashantsinalkar2017-10-10 12:27:19 +0530
commit7f60ea012dd2524dae921a2a35adbf7ef21f2bb6 (patch)
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parentb1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b (diff)
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+clc;
+clear;
+n0=10^16 //donor atoms in cm^-3
+q=1.6*10^-19 //electron charge in J
+ni=1.5*10^10 //in cm^-3
+Nd=10^16 //Donors added to silicon to make it n-type) in cm^-3
+GT=2.25*10^10 //Thermal generation rate of carriers under equilibrium cm^-3/s
+gop=10^21 //in cm^-3/s
+tau_n=10^-6 //in s
+tau_t=2.5*10^-3 //transit time in s
+V=1 //in V
+
+//Calculation
+//a)
+alpha_r=GT/ni^2
+tau_p=(alpha_r*n0)^-1
+
+//b)
+delp=gop*tau_n
+
+//c)
+delI=(q*V*gop*tau_n)/tau_t
+
+mprintf("a)\n")
+mprintf("lifetime of both type of carriers= %g s\n",tau_p)
+mprintf("b)\n")
+mprintf("excess carrier concentration= %g cm^-3\n",delp)
+mprintf("c)\n")
+mprintf("Induced change in current= %.3f A",delI)