initial commit / add all books

5 files changed, 172 insertions, 0 deletions

diff --git a/339/CH7/EX7.1/ex7_1.jpg b/339/CH7/EX7.1/ex7_1.jpg
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index 000000000..55061021e
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+++ b/339/CH7/EX7.1/ex7_1.jpg
diff --git a/339/CH7/EX7.1/ex7_1.sce b/339/CH7/EX7.1/ex7_1.sce
new file mode 100755
index 000000000..023f073f1
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+//define problem parameters

+TT=500e-12; // transit time

+T0=300;     //temperature

+Is0=5e-15;  // reverse saturation current at 300K

+Rs=1.5;     // series resistance

+nn=1.16;    //emission coefficient

+

+// parameters needed to describe temperature behavior of 

+// the band-gap energy in Si

+alpha=7.02e-4; 

+beta=1108;

+Wg0=1.16;

+pt=3;

+

+// quiescent current

+Iq=50e-3;

+

+// frequency range 10MHz to 1GHz

+f_min=10e6;  // lower limit

+f_max=1e9;   //upper limit

+N=300;       // number of points in the graph

+f=f_min*((f_max/f_min).^((0:N)/N)); // compute frequency points on log scale

+

+// temperatures for which analysis will be performed

+T_points=[250 300 350 400];

+

+// define physical constants

+q=1.60218e-19; // electron charge

+k=1.38066e-23; // Boltzmann's constant

+

+for n=1:length(T_points) 

+   T=T_points(n);

+   s=sprintf('T=%.f\n',T);

+   Vt=k*T/q;

+   

+   Wg=Wg0-alpha*T^2/(beta+T);

+   s=sprintf('%s   Wg(T)=%f\n',s,Wg);

+   

+   Is=Is0*(T/T0)^(pt/nn)*exp(-Wg/Vt*(1-T/T0));

+   s=sprintf('%s   Is(T)=%e\n',s,Is);

+   

+   Vq=nn*Vt*log(1+Iq/Is);

+   s=sprintf('%s   Vq(T)=%f\n',s,Vq);

+   

+   Rd=nn*Vt/Iq;

+   s=sprintf('%s   Rd(T)=%f\n',s,Rd);

+   

+   Cd=Is*TT/nn/Vt*exp(Vq/nn/Vt);

+   s=sprintf('%s   Cd(T)=%fpF\n',s,Cd/1e-12)

+   

+   Zc=1./(%i*2*%pi*f*Cd);

+   

+   Zin=Rs+Rd*Zc./(Rd+Zc);

+   

+   plot(f/1e6,abs(Zin));

+   set(gca(),"auto_clear","off");

+end;   

+

+title('Frequency behavior of small-signal diode model');

+xlabel('Frequency {\itf}, MHz');

+ylabel('Impedance |Z|, \Omega');
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diff --git a/339/CH7/EX7.4/ex7_4.sce b/339/CH7/EX7.4/ex7_4.sce
new file mode 100755
index 000000000..ee8f7bfae
--- /dev/null
+++ b/339/CH7/EX7.4/ex7_4.sce
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+//first we define all parameters for the transistor and the circuit

+Z0=50; //characteristic imedance of the system

+

+Vcc=3.6; //power supply voltage

+Vce=2; //collector voltage 

+Ic=10e-3; //collector current

+

+T=300; //ambient temperature (300K)

+

+//transistor parameters (they are very similar to BFG403W)

+beta=145;    // current gain

+Is=5.5e-18;  // saturation current

+VAN= 30;     // forward Early voltage

+tau_f=4e-12; // forward transition time

+rb=125;      // base resistance

+rc=15;       // collector resistance

+re=1.5;      // emitter resistance

+Lb=1.1e-9;   // base inductance

+Lc=1.1e-9;   // collector inductance

+Le=0.5e-9;   // emitter inductance

+Cjc=16e-15;  // collector junction capacitance at zero applied voltage

+mc=0.2;      // collector junction grading coefficient

+Cje=37e-15;  // emitter junction capacitance at zero applied voltage

+me=0.35;     // emitter junction grading coefficient

+phi_be=0.9;  // base-emitter diffusion potential

+phi_bc=0.6;  // base-collector diffusion potential

+Vbe=phi_be;  // base-emitter voltage

+

+// some physical constants

+k=1.38e-23;   // Boltzmann's constant

+q=1.6e-19;    // elementary charge

+VT=k*T/q;     // thermal potential

+

+disp('DC biasing parameters');

+

+Ib=Ic/beta;

+disp("Amperes",Ib,"Base current");

+

+Rc=(Vcc-Vce)/Ic;

+disp("Ohms",Rc,"Collector resistance");

+

+Rb=(Vcc-Vbe)/Ib;

+disp("Ohms",Rb,"Base resistance");

+

+

+r_pi=VT/Ib;

+disp("Ohms",r_pi,"Rpi");

+

+r0=VAN/Ic;

+disp("Ohms",r0,"R0");

+

+gm=beta/r_pi;

+disp("Mho",gm,"Gm");

+

+Vbc=Vbe-Vce;

+Cmu=Cjc*(1-Vbc/phi_bc)^(-mc);

+disp("Farads",Cmu,"base collector capacitance");

+

+if(Vbe<0.5*phi_be)

+   Cpi_junct=Cje*(1-Vbe/phi_be)^(-me);

+else

+   C_middle=Cje*0.5^(-me);

+   k_middle=1-0.5*me;

+   Cpi_junct=C_middle*(k_middle+me*Vbe/phi_be);

+end;

+

+disp("Farads",Cpi_junct,"Junction Capacitance");

+

+Cpi_diff=Is*tau_f/VT*exp(Vbe/VT);

+disp("Farads",Cpi_diff,"Differential capacitance");

+

+Cpi=Cpi_junct+Cpi_diff;

+disp("Farads",Cpi,"Total Capacitance");

+

+C_miller=Cmu*(1+gm*r_pi/(r_pi+rb)*Z0*r0/(r0+rc+Z0));

+disp("Farads",C_miller,"Miller Capacitance");

+

+C_input=Cpi+C_miller;

+disp("Farads",C_input,"Total input capacitance");
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diff --git a/339/CH7/EX7.5/ex7_5.sce b/339/CH7/EX7.5/ex7_5.sce
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index 000000000..eb2a3ba25
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@@ -0,0 +1,14 @@
+l=1*10^-6; //length

+w=200*10^-6; //width

+d=0.5*10^-6; //depth

+E0=8.854*10^-12; 

+Er=13.1;

+q=1.6*10^-19; //electron charge

+Nd=1*10^16; //doping concentration

+mun=8500;

+Vp=(q*Nd*d^2)/(2*Er*E0);

+G0=(q*mun*Nd*w)/l;

+gm=0.0358;

+Cap=(E0*Er*w*l)/d;

+fT=gm/(2*%pi*Cap);

+disp("Hertz",fT,"Cut off frequency");
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diff --git a/339/CH7/EX7.6/ex7_6.sce b/339/CH7/EX7.6/ex7_6.sce
new file mode 100755
index 000000000..1f085d47d
--- /dev/null
+++ b/339/CH7/EX7.6/ex7_6.sce
@@ -0,0 +1,18 @@
+Icq=6*10^-3;

+Ibq=40*10^-6;

+Van=30; //Early voltage

+q=1.6*10^-19;

+k=1.38*10^-23;

+T=300;

+fT=37*10^9; //Transition frequency

+gm=(Icq*q)/(k*T);

+beta0=Icq/Ibq;

+r0=Van/Icq;

+rpi=beta0/gm;

+Cpi=(beta0)/(2*%pi*fT*rpi);

+disp("Hybrid pi parametrs without Miller effect");

+disp("Mho",gm,"gm");

+disp("Ohms",rpi,"Rpi");

+disp("Farads",Cpi,"Cpi");

+disp("Ohms",r0,"R0");

+disp(beta0,"Beta0");
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