From b1f5c3f8d6671b4331cef1dcebdf63b7a43a3a2b Mon Sep 17 00:00:00 2001
From: priyanka
Date: Wed, 24 Jun 2015 15:03:17 +0530
Subject: initial commit / add all books

---
 339/CH7/EX7.1/ex7_1.jpg | Bin 0 -> 49458 bytes
 339/CH7/EX7.1/ex7_1.sce |  61 +++++++++++++++++++++++++++++++++++++
 339/CH7/EX7.4/ex7_4.sce |  79 ++++++++++++++++++++++++++++++++++++++++++++++++
 339/CH7/EX7.5/ex7_5.sce |  14 +++++++++
 339/CH7/EX7.6/ex7_6.sce |  18 +++++++++++
 5 files changed, 172 insertions(+)
 create mode 100755 339/CH7/EX7.1/ex7_1.jpg
 create mode 100755 339/CH7/EX7.1/ex7_1.sce
 create mode 100755 339/CH7/EX7.4/ex7_4.sce
 create mode 100755 339/CH7/EX7.5/ex7_5.sce
 create mode 100755 339/CH7/EX7.6/ex7_6.sce

(limited to '339/CH7')

diff --git a/339/CH7/EX7.1/ex7_1.jpg b/339/CH7/EX7.1/ex7_1.jpg
new file mode 100755
index 000000000..55061021e
Binary files /dev/null and b/339/CH7/EX7.1/ex7_1.jpg differ
diff --git a/339/CH7/EX7.1/ex7_1.sce b/339/CH7/EX7.1/ex7_1.sce
new file mode 100755
index 000000000..023f073f1
--- /dev/null
+++ b/339/CH7/EX7.1/ex7_1.sce
@@ -0,0 +1,61 @@
+//define problem parameters
+TT=500e-12; // transit time
+T0=300;     //temperature
+Is0=5e-15;  // reverse saturation current at 300K
+Rs=1.5;     // series resistance
+nn=1.16;    //emission coefficient
+
+// parameters needed to describe temperature behavior of 
+// the band-gap energy in Si
+alpha=7.02e-4; 
+beta=1108;
+Wg0=1.16;
+pt=3;
+
+// quiescent current
+Iq=50e-3;
+
+// frequency range 10MHz to 1GHz
+f_min=10e6;  // lower limit
+f_max=1e9;   //upper limit
+N=300;       // number of points in the graph
+f=f_min*((f_max/f_min).^((0:N)/N)); // compute frequency points on log scale
+
+// temperatures for which analysis will be performed
+T_points=[250 300 350 400];
+
+// define physical constants
+q=1.60218e-19; // electron charge
+k=1.38066e-23; // Boltzmann's constant
+
+for n=1:length(T_points) 
+   T=T_points(n);
+   s=sprintf('T=%.f\n',T);
+   Vt=k*T/q;
+   
+   Wg=Wg0-alpha*T^2/(beta+T);
+   s=sprintf('%s   Wg(T)=%f\n',s,Wg);
+   
+   Is=Is0*(T/T0)^(pt/nn)*exp(-Wg/Vt*(1-T/T0));
+   s=sprintf('%s   Is(T)=%e\n',s,Is);
+   
+   Vq=nn*Vt*log(1+Iq/Is);
+   s=sprintf('%s   Vq(T)=%f\n',s,Vq);
+   
+   Rd=nn*Vt/Iq;
+   s=sprintf('%s   Rd(T)=%f\n',s,Rd);
+   
+   Cd=Is*TT/nn/Vt*exp(Vq/nn/Vt);
+   s=sprintf('%s   Cd(T)=%fpF\n',s,Cd/1e-12)
+   
+   Zc=1./(%i*2*%pi*f*Cd);
+   
+   Zin=Rs+Rd*Zc./(Rd+Zc);
+   
+   plot(f/1e6,abs(Zin));
+   set(gca(),"auto_clear","off");
+end;   
+
+title('Frequency behavior of small-signal diode model');
+xlabel('Frequency {\itf}, MHz');
+ylabel('Impedance |Z|, \Omega');
\ No newline at end of file
diff --git a/339/CH7/EX7.4/ex7_4.sce b/339/CH7/EX7.4/ex7_4.sce
new file mode 100755
index 000000000..ee8f7bfae
--- /dev/null
+++ b/339/CH7/EX7.4/ex7_4.sce
@@ -0,0 +1,79 @@
+//first we define all parameters for the transistor and the circuit
+Z0=50; //characteristic imedance of the system
+
+Vcc=3.6; //power supply voltage
+Vce=2; //collector voltage 
+Ic=10e-3; //collector current
+
+T=300; //ambient temperature (300K)
+
+//transistor parameters (they are very similar to BFG403W)
+beta=145;    // current gain
+Is=5.5e-18;  // saturation current
+VAN= 30;     // forward Early voltage
+tau_f=4e-12; // forward transition time
+rb=125;      // base resistance
+rc=15;       // collector resistance
+re=1.5;      // emitter resistance
+Lb=1.1e-9;   // base inductance
+Lc=1.1e-9;   // collector inductance
+Le=0.5e-9;   // emitter inductance
+Cjc=16e-15;  // collector junction capacitance at zero applied voltage
+mc=0.2;      // collector junction grading coefficient
+Cje=37e-15;  // emitter junction capacitance at zero applied voltage
+me=0.35;     // emitter junction grading coefficient
+phi_be=0.9;  // base-emitter diffusion potential
+phi_bc=0.6;  // base-collector diffusion potential
+Vbe=phi_be;  // base-emitter voltage
+
+// some physical constants
+k=1.38e-23;   // Boltzmann's constant
+q=1.6e-19;    // elementary charge
+VT=k*T/q;     // thermal potential
+
+disp('DC biasing parameters');
+
+Ib=Ic/beta;
+disp("Amperes",Ib,"Base current");
+
+Rc=(Vcc-Vce)/Ic;
+disp("Ohms",Rc,"Collector resistance");
+
+Rb=(Vcc-Vbe)/Ib;
+disp("Ohms",Rb,"Base resistance");
+
+
+r_pi=VT/Ib;
+disp("Ohms",r_pi,"Rpi");
+
+r0=VAN/Ic;
+disp("Ohms",r0,"R0");
+
+gm=beta/r_pi;
+disp("Mho",gm,"Gm");
+
+Vbc=Vbe-Vce;
+Cmu=Cjc*(1-Vbc/phi_bc)^(-mc);
+disp("Farads",Cmu,"base collector capacitance");
+
+if(Vbe<0.5*phi_be)
+   Cpi_junct=Cje*(1-Vbe/phi_be)^(-me);
+else
+   C_middle=Cje*0.5^(-me);
+   k_middle=1-0.5*me;
+   Cpi_junct=C_middle*(k_middle+me*Vbe/phi_be);
+end;
+
+disp("Farads",Cpi_junct,"Junction Capacitance");
+
+Cpi_diff=Is*tau_f/VT*exp(Vbe/VT);
+disp("Farads",Cpi_diff,"Differential capacitance");
+
+Cpi=Cpi_junct+Cpi_diff;
+disp("Farads",Cpi,"Total Capacitance");
+
+C_miller=Cmu*(1+gm*r_pi/(r_pi+rb)*Z0*r0/(r0+rc+Z0));
+disp("Farads",C_miller,"Miller Capacitance");
+
+C_input=Cpi+C_miller;
+disp("Farads",C_input,"Total input capacitance");
\ No newline at end of file
diff --git a/339/CH7/EX7.5/ex7_5.sce b/339/CH7/EX7.5/ex7_5.sce
new file mode 100755
index 000000000..eb2a3ba25
--- /dev/null
+++ b/339/CH7/EX7.5/ex7_5.sce
@@ -0,0 +1,14 @@
+l=1*10^-6; //length
+w=200*10^-6; //width
+d=0.5*10^-6; //depth
+E0=8.854*10^-12; 
+Er=13.1;
+q=1.6*10^-19; //electron charge
+Nd=1*10^16; //doping concentration
+mun=8500;
+Vp=(q*Nd*d^2)/(2*Er*E0);
+G0=(q*mun*Nd*w)/l;
+gm=0.0358;
+Cap=(E0*Er*w*l)/d;
+fT=gm/(2*%pi*Cap);
+disp("Hertz",fT,"Cut off frequency");
\ No newline at end of file
diff --git a/339/CH7/EX7.6/ex7_6.sce b/339/CH7/EX7.6/ex7_6.sce
new file mode 100755
index 000000000..1f085d47d
--- /dev/null
+++ b/339/CH7/EX7.6/ex7_6.sce
@@ -0,0 +1,18 @@
+Icq=6*10^-3;
+Ibq=40*10^-6;
+Van=30; //Early voltage
+q=1.6*10^-19;
+k=1.38*10^-23;
+T=300;
+fT=37*10^9; //Transition frequency
+gm=(Icq*q)/(k*T);
+beta0=Icq/Ibq;
+r0=Van/Icq;
+rpi=beta0/gm;
+Cpi=(beta0)/(2*%pi*fT*rpi);
+disp("Hybrid pi parametrs without Miller effect");
+disp("Mho",gm,"gm");
+disp("Ohms",rpi,"Rpi");
+disp("Farads",Cpi,"Cpi");
+disp("Ohms",r0,"R0");
+disp(beta0,"Beta0");
\ No newline at end of file
-- 
cgit