initial commit / add all books

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+//define problem parameters

+Nd=1e16*1e6;

+d=0.75e-6;

+W=10e-6;

+L=2e-6;

+eps_r=12;

+Vd=0.8;

+mu_n=8500e-4;

+Vgs=0:-0.01:-4;

+

+//define physical constants

+q=1.60218e-19;// electron charge

+eps0=8.85e-12;// permittivity of free space

+

+eps=eps_r*eps0;

+

+//pinch-off voltage

+Vp=q*Nd*d^2/(2*eps)

+

+//threshold voltage

+Vt0=Vd-Vp

+

+//conductivity of the channel

+sigma=q*mu_n*Nd

+

+//Channel conductance

+G0=q*sigma*Nd*W*d/L

+

+//saturation current using the exact formula

+Id_sat=G0*(Vp/3-(Vd-Vgs)+2/(3*sqrt(Vp))*(Vd-Vgs).^(3/2)).*(1-(Vgs<Vt0));

+Idss=Id_sat(1)

+

+//saturation current using the quadratic law approximation

+Id_sat_square=Idss*(1-Vgs/Vt0)^2;

+

+plot(Vgs,Id_sat,Vgs,Id_sat_square);

+legend('exact formula', 'quadratic approximation',2);

+title('FET saturation current as a function of the gate-source voltage');

+xlabel('Gate-source voltage V_{GS}, V');

+ylabel('Drain saturation current I_{DSat}, A');