initial commit / add all books

7 files changed, 94 insertions, 0 deletions

diff --git a/284/CH4/EX4.1/ex_1.sce b/284/CH4/EX4.1/ex_1.sce
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+// Chapter 4_Carrier Transport Phenomenon

+//Caption_Carrier drift

+//Ex_1//page 134

+T=300    //temperature in kelvin

+Na=0

+e=1.6*(10^-19)

+Nd=10^16    //donor concentration in per cm cube

+E=10   //Applied electric field in V/cm

+ni=1.8*(10^6)

+n=(Nd-Na)/2+(((Nd-Na)/2)^2+ni^2)^0.5

+p=ni^2/n

+muN=8500   //mobility of electron in  gallium arsenide in cm^2/V-s

+mup=400

+J=e*(muN*n+mup*p)*E

+printf('The drift current density for this electric field is %1.2fd A/cm^2',J )
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diff --git a/284/CH4/EX4.2/ex_2.sce b/284/CH4/EX4.2/ex_2.sce
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index 000000000..8d8a0b908
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+// Chapter 4_Carrier Transport Phenomenon

+//Caption_Carrier drift

+//Ex_2//page 143

+T=300

+sig=16   //CONDUCTIVITY IN (OHM-CM)^-1

+Na=10^16   //acceptor doping concentration

+e=1.6*(10^-19)

+// sig=e*muN*(Nd-Na)

+//By trial and error

+printf('Doping concentration is 3.5*10^17 cm^-3 and mobilityis 400 cm^2/V-S')
\ No newline at end of file
diff --git a/284/CH4/EX4.3/ex_3.sce b/284/CH4/EX4.3/ex_3.sce
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+++ b/284/CH4/EX4.3/ex_3.sce
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+// Chapter 4_Carrier Transport Phenomenon

+//Caption_Conductivity

+//Ex_2//page 144

+T=300

+Nd=5*(10^15)    //donor concentration

+R=10   //resistance in kohm

+J=50    //current density in A/cm^2

+V=5   //voltage  in volts

+i=V/R    //current

+A=i/J    //cross sectional area

+E=100

+L=V/E   //length of the resistor

+pho=L/(V*A)

+// The conductivity of a compensated p-type semiconductor is

+//pho=e*muP*(Na-Nd)

+//where the mobilty is a function of the total ionized impurity concentration Na+Nd

+//Using trial and error , if

+ Na=1.25*(10^16)

+ muP=410

+ e=1.6*(10^-19)

+sig=e*muP*(Na-Nd)

+printf('Conductivity obtained is %1.2fd which is very close to the value we need',sig)
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diff --git a/284/CH4/EX4.4/ex_4.sce b/284/CH4/EX4.4/ex_4.sce
new file mode 100755
index 000000000..f040adcf5
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+++ b/284/CH4/EX4.4/ex_4.sce
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+// Chapter 4_Carrier Transport Phenomenon

+//Caption_Carrier diffusion

+//Ex_4//page 150

+T=300

+d=0.10   //distance in cm over which concentration varies

+Dn=225    //diffusion coefficient

+e=1.6*(10^-19)

+delN=1*(10^18)-7*(10^17)

+J=e*Dn*(delN/d)

+printf('The diffusion current density is %1.2fd A/cm^3',J)

+

diff --git a/284/CH4/EX4.5/ex_5.sce b/284/CH4/EX4.5/ex_5.sce
new file mode 100755
index 000000000..641907e26
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+++ b/284/CH4/EX4.5/ex_5.sce
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+// Chapter 4_Carrier Transport Phenomenon

+//Caption_Graded impurity distribution

+//Ex_5//page 153

+T=300

+x=0   //given 0<x<1 micrometer

+Nd=10^16-10^19*x

+//Taking the derivative of donor concentration , we have d(ND)/dx=-10^19

+e=1.6*(10^-19)

+Ex=-(0.0259)*(-10^19)/Nd

+printf('The induced electric field is %1.1fd V/cm',Ex)
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diff --git a/284/CH4/EX4.6/ex_6.sce b/284/CH4/EX4.6/ex_6.sce
new file mode 100755
index 000000000..eab9f9d5d
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+++ b/284/CH4/EX4.6/ex_6.sce
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+// Chapter 4_Carrier Transport Phenomenon

+//Caption_The Einstein relation

+//Ex_6//page 155

+T=300

+mu=1000    //mobility of a particular carrier

+kT=0.0259

+e=1.6*(10^-19)

+D=(kT)*mu

+printf('Diffusion coefficient is %1.2fd cm^2/s ',D)
\ No newline at end of file
diff --git a/284/CH4/EX4.7/ex_7.sce b/284/CH4/EX4.7/ex_7.sce
new file mode 100755
index 000000000..8948c7970
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+++ b/284/CH4/EX4.7/ex_7.sce
@@ -0,0 +1,17 @@
+// Chapter 4_Carrier Transport Phenomenon

+//Caption_The Hall Effect

+//Ex_7//page 158

+L=10^-3    //LENGTH IN M

+W=10^-2    //WIDTH IN CM

+d=10^-5

+Ix=10^-3   //current in Amp

+Vx=12.5

+e=1.6*(10^-19)

+Bz=500    //magnetic field in gauss

+Vh=-6.25*10^-3    //hall voltage

+

+//A negative hall voltage for this geometry implies that we have an n-type semiconductor

+BzT=Bz*10^-4   //magnetic field in tesla

+n=-(Ix*BzT)/(e*d*Vh*10^6)

+mun=(Ix*L)/(e*n*Vx*W*d)

+printf('Majority carrier concentration is %1.1fd cm^-3 and mobility is %1.1fd cm^2/V-s ',n,mun)