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Diffstat (limited to '284/CH4/EX4.3/ex_3.sce')
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1 files changed, 22 insertions, 0 deletions
diff --git a/284/CH4/EX4.3/ex_3.sce b/284/CH4/EX4.3/ex_3.sce new file mode 100755 index 000000000..bae394eba --- /dev/null +++ b/284/CH4/EX4.3/ex_3.sce @@ -0,0 +1,22 @@ +// Chapter 4_Carrier Transport Phenomenon
+//Caption_Conductivity
+//Ex_2//page 144
+T=300
+Nd=5*(10^15) //donor concentration
+R=10 //resistance in kohm
+J=50 //current density in A/cm^2
+V=5 //voltage in volts
+i=V/R //current
+A=i/J //cross sectional area
+E=100
+L=V/E //length of the resistor
+pho=L/(V*A)
+// The conductivity of a compensated p-type semiconductor is
+//pho=e*muP*(Na-Nd)
+//where the mobilty is a function of the total ionized impurity concentration Na+Nd
+//Using trial and error , if
+ Na=1.25*(10^16)
+ muP=410
+ e=1.6*(10^-19)
+sig=e*muP*(Na-Nd)
+printf('Conductivity obtained is %1.2fd which is very close to the value we need',sig)
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