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Diffstat (limited to '284/CH4/EX4.7/ex_7.sce')
-rwxr-xr-x | 284/CH4/EX4.7/ex_7.sce | 17 |
1 files changed, 17 insertions, 0 deletions
diff --git a/284/CH4/EX4.7/ex_7.sce b/284/CH4/EX4.7/ex_7.sce new file mode 100755 index 000000000..8948c7970 --- /dev/null +++ b/284/CH4/EX4.7/ex_7.sce @@ -0,0 +1,17 @@ +// Chapter 4_Carrier Transport Phenomenon
+//Caption_The Hall Effect
+//Ex_7//page 158
+L=10^-3 //LENGTH IN M
+W=10^-2 //WIDTH IN CM
+d=10^-5
+Ix=10^-3 //current in Amp
+Vx=12.5
+e=1.6*(10^-19)
+Bz=500 //magnetic field in gauss
+Vh=-6.25*10^-3 //hall voltage
+
+//A negative hall voltage for this geometry implies that we have an n-type semiconductor
+BzT=Bz*10^-4 //magnetic field in tesla
+n=-(Ix*BzT)/(e*d*Vh*10^6)
+mun=(Ix*L)/(e*n*Vx*W*d)
+printf('Majority carrier concentration is %1.1fd cm^-3 and mobility is %1.1fd cm^2/V-s ',n,mun)
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