initial commit / add all books

10 files changed, 165 insertions, 0 deletions

diff --git a/2549/CH2/EX2.7.1/Ex2_7_1.sce b/2549/CH2/EX2.7.1/Ex2_7_1.sce
new file mode 100644
index 000000000..107725364
--- /dev/null
+++ b/2549/CH2/EX2.7.1/Ex2_7_1.sce
@@ -0,0 +1,13 @@
+//Ex2.7.1

+//reverse saturation current =?

+clc;

+clear;

+If=10*10^-3;

+Vf=0.75;

+T=27;//temp in celsius

+T=T+273;//temp in kelvin

+n=2;//n is emission coefficient for si =2

+k=8.62*10^-5;// boltzmann's constant

+Vt=T*k;//voltage equivalent at given T

+Io=If/(%e^(Vf/(n*Vt))-1);

+disp( 'nA',Io*10^9,'reverse saturation current is :')

diff --git a/2549/CH2/EX2.7.2/Ex2_7_2.sce b/2549/CH2/EX2.7.2/Ex2_7_2.sce
new file mode 100644
index 000000000..7d51595e6
--- /dev/null
+++ b/2549/CH2/EX2.7.2/Ex2_7_2.sce
@@ -0,0 +1,14 @@
+//Ex2.7.2

+//reverse saturation current =?

+clc;

+clear;

+If=10*10^-3;

+Vf=0.3;

+T=27;//temp in celsius

+T=T+273;//temp in kelvin

+n=1//n is emission coefficient for Ge =1

+k=8.62*10^-5;// boltzmann's constant

+Vt=T*k;//voltage equivalent at given T

+Io=If/(%e^(Vf/(n*Vt))-1)//diode current equation

+disp( 'nA',Io*10^9,'reverse saturation current is :')

+

diff --git a/2549/CH2/EX2.7.3/Ex2_7_3.sce b/2549/CH2/EX2.7.3/Ex2_7_3.sce
new file mode 100644
index 000000000..c9bb8f7f0
--- /dev/null
+++ b/2549/CH2/EX2.7.3/Ex2_7_3.sce
@@ -0,0 +1,13 @@
+//Ex2.7.3
+//forward diode current =?
+clc
+clear
+Io=1*10^-9;
+Vf=0.3;
+T=27;//temp in celsius
+T=T+273;//temp in kelvin
+n=1;//n is emission coefficient for Ge =1
+k=8.62*10^-5;// boltzmann's constant
+Vt=T*k;//voltage equivalent at given T
+If=Io*(exp(Vf/(n*Vt))-1)
+disp( 'mA',If*10^3,'forward diode current is :')
diff --git a/2549/CH2/EX2.7.4/Ex2_7_4.sce b/2549/CH2/EX2.7.4/Ex2_7_4.sce
new file mode 100644
index 000000000..270ff53f1
--- /dev/null
+++ b/2549/CH2/EX2.7.4/Ex2_7_4.sce
@@ -0,0 +1,17 @@
+//Ex2.7.4

+//reverse saturation current =?

+clc;

+clear;

+//given

+If=1*10^-3;

+Vf=0.15;//forward breakdown voltage of diode 

+T=27;//temp in celsius

+T=T+273;//temp in kelvin

+n=1//n is emission coefficient for Ge =1

+k=8.62*10^-5;// boltzmann's constant

+Vt=T*k;//voltage equivalent at given T

+//expression for reverse saturation current

+Io=If/(%e^(Vf/(n*Vt))-1)//diode current equation

+disp( 'uA',Io*10^6,'reverse saturation current is :')

+

+

diff --git a/2549/CH2/EX2.7.5/Ex2_7_5.sce b/2549/CH2/EX2.7.5/Ex2_7_5.sce
new file mode 100644
index 000000000..19460c9f4
--- /dev/null
+++ b/2549/CH2/EX2.7.5/Ex2_7_5.sce
@@ -0,0 +1,20 @@
+//Ex2.7.5

+//calculation of voltage across diode connected in parallel.

+clc;

+clear;

+//given

+Io1=1*10^-12;//reverse saturation current for diode1

+Io2=1*10^-10;//reverse saturation current for diode2

+I=2*10^-3;//total current 

+//room temperature

+T=27;//temp in celsius

+T=T+273;//temp in kelvin

+n=1//n is emission coefficient

+k=8.62*10^-5;// boltzmann's constant

+Vt=T*k;//voltage equivalent at given T

+

+//diode current equation If=Ioexp(V/n*Vt-1)

+//arranging diode eq for I=I1+I2 and getting exp for V

+V=n*Vt*log(I/(Io1+Io2));

+disp( 'volt',V,'voltage across diode connected in parallel is :')

+

diff --git a/2549/CH2/EX2.7.6/Ex2_7_6.sce b/2549/CH2/EX2.7.6/Ex2_7_6.sce
new file mode 100644
index 000000000..3fac4f56a
--- /dev/null
+++ b/2549/CH2/EX2.7.6/Ex2_7_6.sce
@@ -0,0 +1,20 @@
+//Ex2.7.6

+//calculation of source current connected in parallel.

+clc;

+clear;

+//given

+Io=10*10^-9;//reverse saturation current for diode1 and diode2

+V=0.2;// assuming

+T=25;//temp in celsius

+T=T+273;//temp in kelvin

+n=1.1;//n is emission coefficient

+k=8.62*10^-5;// boltzmann's constant

+Vt=T*k;//voltage equivalent at given T

+//diode current equation I=Ioexp(V/n*Vt-1)

+I1=Io*(exp(V/(n*Vt))-1);

+disp('uA',I1*10^6,'current across diode1 is ;')

+I2=Io*(exp(V/(n*Vt))-1);

+disp('uA',I2*10^6,'current across diode2 is ;')

+I=I1+I2;//total current

+disp( 'uA',I*10^6,'total current on diode1 and diode2 or source current is :')

+

diff --git a/2549/CH2/EX2.8.1/Ex2_8_1.sce b/2549/CH2/EX2.8.1/Ex2_8_1.sce
new file mode 100644
index 000000000..5692397ff
--- /dev/null
+++ b/2549/CH2/EX2.8.1/Ex2_8_1.sce
@@ -0,0 +1,21 @@
+//Ex2.8.1

+//calculation of the reverse and forward dynamic resistance.

+clc;

+clear;

+//given

+Io=1*10^-6;//reverse saturation current for diode

+Vr=-0.52;//reversed voltage

+Vf=0.52;//forward voltage  

+//room temperature

+T=27;//temp in celsius

+T=T+273;//temp in kelvin

+n=1//n is emission coefficient

+k=8.62*10^-5;// boltzmann's constant

+Vt=T*k;//voltage equivalent at given T

+Rf=n*Vt/(Io*exp(Vf/(n*Vt)));//dynamic resistance in forward biased condition

+disp('ohm',Rf,'dynamic resistance in forward biased condition is :')

+Rr=n*Vt/(Io*exp(Vr/(n*Vt)));//dynamic resistance in reverse biased condition

+disp('ohm',Rr,'dynamic resistance in reverse biased condition is :')

+

+

+

diff --git a/2549/CH2/EX2.8.2/Ex2_8_2.sce b/2549/CH2/EX2.8.2/Ex2_8_2.sce
new file mode 100644
index 000000000..d1ddd960f
--- /dev/null
+++ b/2549/CH2/EX2.8.2/Ex2_8_2.sce
@@ -0,0 +1,15 @@
+//Ex2.8.2

+//dynamic forward resistance r=?

+

+clc;

+clear;

+Io=0;// negligible

+I=1*10^-3;//dc current

+//at room temperature

+T=27;//temp in celsius

+T=T+273;//temp in kelvin

+n=2;//n is emission coefficient for Si

+k=8.62*10^-5;// boltzmann's constant

+Vt=T*k;//voltage equivalent at given T

+R=n*Vt/(I+Io);// exp for dynamic resistance of diode

+disp( 'ohm',R,'forward dynamic resistance is :')

diff --git a/2549/CH2/EX2.9.1/Ex2_9_1.sce b/2549/CH2/EX2.9.1/Ex2_9_1.sce
new file mode 100644
index 000000000..5f13c389f
--- /dev/null
+++ b/2549/CH2/EX2.9.1/Ex2_9_1.sce
@@ -0,0 +1,16 @@
+//Ex2.9.1

+//calculation of the width of depletion layer

+clc;

+clear;

+Na=4*10^20;//accepter impurity atom concentration per m3

+Vj=0.2;//contact potential

+V=-1;//applied reverse voltage

+V1=-5;

+epslnR=16;//for Ge

+epslnO=8.854*10^-12;//permittivity of free space

+epsln=epslnR*epslnO;//permittivity of semiconductor

+q=1.6*10^-19;//charge

+W=sqrt((2*epsln*(Vj-V))/(q*Na))//expression for width of depletion layer

+disp('um',W*10^6,'width of depletion layer is when V=-1')

+W=sqrt((2*epsln*(Vj-V1))/(q*Na))

+disp('um',W*10^6,'width of depletion layer is when V=-5')

diff --git a/2549/CH2/EX2.9.2/Ex2_9_2.sce b/2549/CH2/EX2.9.2/Ex2_9_2.sce
new file mode 100644
index 000000000..1c26a5975
--- /dev/null
+++ b/2549/CH2/EX2.9.2/Ex2_9_2.sce
@@ -0,0 +1,16 @@
+// Ex2.9.2

+//calculation of transition capacitance

+clc;

+clear;

+//given

+W=2.38*10^-6; //width of depletion layer for V=-1

+W1=4.8*10^-6;//width of depletion layer for V=-5

+A=0.8*10^-6;//area of junction

+epslnR=16;//for Ge

+epslnO=8.854*10^-12;//permittivity of free space

+epsln=epslnR*epslnO;//permittivity of semiconductor

+Ct=(epsln*A)/W;

+disp('pf',Ct*10^12,'transition capacitance Ct for V=-1 is:')

+Ct1=(epsln*A)/W1;

+disp('pf',Ct1*10^12,'transition capacitance Ct1 for V=-5 is:')

+disp('The answer shows that Transition Capacitance Ct decrease with increase in Reverse Voltage')