diff options
Diffstat (limited to '2549/CH2/EX2.9.1/Ex2_9_1.sce')
| -rw-r--r-- | 2549/CH2/EX2.9.1/Ex2_9_1.sce | 16 |
1 files changed, 16 insertions, 0 deletions
diff --git a/2549/CH2/EX2.9.1/Ex2_9_1.sce b/2549/CH2/EX2.9.1/Ex2_9_1.sce new file mode 100644 index 000000000..5f13c389f --- /dev/null +++ b/2549/CH2/EX2.9.1/Ex2_9_1.sce @@ -0,0 +1,16 @@ +//Ex2.9.1
+//calculation of the width of depletion layer
+clc;
+clear;
+Na=4*10^20;//accepter impurity atom concentration per m3
+Vj=0.2;//contact potential
+V=-1;//applied reverse voltage
+V1=-5;
+epslnR=16;//for Ge
+epslnO=8.854*10^-12;//permittivity of free space
+epsln=epslnR*epslnO;//permittivity of semiconductor
+q=1.6*10^-19;//charge
+W=sqrt((2*epsln*(Vj-V))/(q*Na))//expression for width of depletion layer
+disp('um',W*10^6,'width of depletion layer is when V=-1')
+W=sqrt((2*epsln*(Vj-V1))/(q*Na))
+disp('um',W*10^6,'width of depletion layer is when V=-5')
|