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+// Exa 4.2

+format('v',5)

+clc;

+clear;

+close;

+// Given data

+V_BB = 15;// in V

+V_CC = 15;// in V

+I_CO = 0.1;// in µA

+I_CO = I_CO * 10^-6;// in A

+Beta = 60;

+I_B = 50;// in µA

+I_B = I_B * 10^-6;// in A

+V_CE = 8;// in V

+I_C = (Beta*I_B)+((1+Beta)*I_CO);// in A

+I_C =  round(I_C * 10^3);// in mA

+disp("Part (i) : ")

+disp(I_C,"The value of I_C in mA is");

+R_C = (V_CC-V_CE)/(I_C*10^-3);// in ohm

+R_C = R_C * 10^-3;// in k ohm

+disp(R_C,"The value of R_C in k ohm is");

+V_BE = 0.3;// in V

+R_BGe = (V_BB-V_BE)/I_B;// in ohm

+R_BGe = R_BGe * 10^-3;// in k ohm

+disp(R_BGe,"The value of R_B for Ge in k ohm is");

+V_BE = 0.7;// in V

+R_BSi = (V_BB-V_BE)/I_B;// in ohm

+R_BSi = R_BSi * 10^-3;// in k ohm

+disp(R_BSi,"The value of R_B for Si in k ohm is");

+P_RC = ((I_C*10^-3)^2)*(7/3)*10^3;// in W

+P_RC = P_RC * 10^3;// in mW

+disp("Part (ii) : ")

+disp(P_RC,"The power dissipations in RC in mW is");

+// The power dissipations in the transistor 

+P_TRANS = V_CE*I_C;// in mW

+disp(P_TRANS,"The power dissipations in the transistor in mW is");

+disp("Part (iii) : For RC= 1 kΩ, V_CE increase, shifting the Q-point ot right and I_C increase slightly")