initial commit / add all books

22 files changed, 180 insertions, 0 deletions

diff --git a/2243/CH11/EX11.10/Ex11_10.sce b/2243/CH11/EX11.10/Ex11_10.sce
new file mode 100755
index 000000000..350ed47c8
--- /dev/null
+++ b/2243/CH11/EX11.10/Ex11_10.sce
@@ -0,0 +1,29 @@
+clc();

+clear;

+//Given :

+Ecd = 0.045; // Ec-Ed in eV

+Ecf = 0.035; // Ec-Ef in eV

+Efd = 0.01;// Ef-Ed in eV

+Ev = 0; // in eV

+Ef = 1.065; // in eV

+me = 9.1*10^-31;// electron mass in kg

+m_e = 0.31*me; // free electron mass

+m_h = 0.38*me;// hole mass

+kT = 0.026; // kT value at room temperature

+h = 6.625*10^-34; // planck's constant in Js

+Nc = 2*((2*%pi*m_e*kT*1.6*10^-19)/(h^2))^(3/2); // per m^3

+Nv = 2*((2*%pi*m_h*kT*1.6*10^-19)/(h^2))^(3/2); // per m^3

+//(a)

+// Nc*exp[-(Ec-Ef)/kT] = Nd*[1 - 1/(1+ exp[(Ed-Ef)/kT])]

+//Ed - Ef = -(Ef-Ed) = - Efd

+Nd = (Nc*exp(-Ecf/kT))/(1 - (1/(1+exp(-Efd/kT)))); // per m^3

+//(b)

+Nd_plus = Nd*(1 - (1/(1 + exp(-Efd/kT)))); // per m^3

+//(c)

+n = Nc*exp(-Ecf/kT); // per m^3

+//(d)

+p = Nv*exp((Ev-Ef)/kT);// per m^3

+printf("Nd = %.1f x 10^24 / m^3 \n",Nd*10^-24);

+printf("Nd_plus = %.2f x 10^24 / m^3 \n",Nd_plus*10^-24);

+printf("n = %.2f x 10^24 / m^3\n",n*10^-24);

+printf("p = %.1f x 10^6 / m^3",p*10^-6);

diff --git a/2243/CH11/EX11.10/Res11_10.txt b/2243/CH11/EX11.10/Res11_10.txt
new file mode 100755
index 000000000..cc525f3f5
--- /dev/null
+++ b/2243/CH11/EX11.10/Res11_10.txt
@@ -0,0 +1,4 @@
+ Nd = 2.8 x 10^24 / m^3 

+Nd_plus = 1.13 x 10^24 / m^3 

+n = 1.13 x 10^24 / m^3

+p = 9.6 x 10^6 / m^3 
\ No newline at end of file
diff --git a/2243/CH11/EX11.11/Ex11_11.sce b/2243/CH11/EX11.11/Ex11_11.sce
new file mode 100755
index 000000000..b8adcf9df
--- /dev/null
+++ b/2243/CH11/EX11.11/Ex11_11.sce
@@ -0,0 +1,19 @@
+clc();

+clear;

+//Given :

+ni = 1.5*10^16; // ni for Si in m^-3

+mue = 0.135; // mobility of free electrons in m^2/Vs

+muh = 0.048; // mobility of holes in m^2/Vs

+Nd = 10^21; // phosphorus atoms/m^3

+e = 1.6*10^-19;// charge of an electron in C

+//(a) 

+n = Nd; // electrons/m^3

+//(b)

+p = ni^2/Nd; // holes/m^3

+//(c)

+sigma = e*(n*mue + p*muh); // conductivity in mho m^-1

+rho = 1/sigma; // resistivity in ohm m

+

+printf("Major carrier concentration  = %.1f x 10^21 electrons/m^3 \n",n*10^-21);

+printf("Minor carrier concentration  = %.2f x 10^11 holes/m^3\n",p*10^-11);

+printf("Resistivity  = %.3f ohm m",rho);

diff --git a/2243/CH11/EX11.11/Res11_11.txt b/2243/CH11/EX11.11/Res11_11.txt
new file mode 100755
index 000000000..c3c25f898
--- /dev/null
+++ b/2243/CH11/EX11.11/Res11_11.txt
@@ -0,0 +1,3 @@
+ Major carrier concentration  = 1.0 x 10^21 electrons/m^3 

+Minor carrier concentration  = 2.25 x 10^11 holes/m^3

+Resistivity  = 0.046 ohm m 
\ No newline at end of file
diff --git a/2243/CH11/EX11.12/Ex11_12.sce b/2243/CH11/EX11.12/Ex11_12.sce
new file mode 100755
index 000000000..4f8f4afc6
--- /dev/null
+++ b/2243/CH11/EX11.12/Ex11_12.sce
@@ -0,0 +1,11 @@
+clc();

+clear;

+//Given :

+Eg = 1.1;// Energy gap in eV

+T1 = 300 ;// Temperature in K

+T2 = 473; // Temperature in K (273+ 200 = 473 K)

+k = 8.62*10^-5 ; // in eV

+// sigma = A*exp(-Eg/(2*k*T))

+//Ratio = sigma_473/sigma_300

+Ratio = exp((-Eg/(2*k))*((1/T2)-(1/T1)));

+printf("Thus, sigma_473 is  %d  times  sigma_300",Ratio);

diff --git a/2243/CH11/EX11.12/Res11_12.txt b/2243/CH11/EX11.12/Res11_12.txt
new file mode 100755
index 000000000..cbf73a5fb
--- /dev/null
+++ b/2243/CH11/EX11.12/Res11_12.txt
@@ -0,0 +1 @@
+Thus, sigma_473 is  2389  times  sigma_300 
\ No newline at end of file
diff --git a/2243/CH11/EX11.13/Ex11_13.sce b/2243/CH11/EX11.13/Ex11_13.sce
new file mode 100755
index 000000000..26ea03983
--- /dev/null
+++ b/2243/CH11/EX11.13/Ex11_13.sce
@@ -0,0 +1,13 @@
+clc();

+clear;

+//Given :

+Eg1 = 0.72; // Energy gap for Ge in eV

+Eg2 = 1.1; // Energy gap for Si in eV

+Eg3 = 1.32; // Energy gap for GaAs in eV

+// lambda = c/v = (c*h)/Eg   or lambda(A) = 12422/Eg (eV)

+lambda1 = 12422/Eg1; // wavelength in A  (Ge)

+lambda2 = 12422/Eg2; // wavelength in A  (Si)

+lambda3 = 12422/Eg3; // wavelength in A  (GaAs)

+printf("Wavelength for Ge = %.1f A \n",lambda1);

+printf("Wavelength for Si = %.1f A \n",lambda2);

+printf("Wavelength for GaAs = %.2f A",lambda3);

diff --git a/2243/CH11/EX11.13/Res11_13.txt b/2243/CH11/EX11.13/Res11_13.txt
new file mode 100755
index 000000000..86ce0e7c9
--- /dev/null
+++ b/2243/CH11/EX11.13/Res11_13.txt
@@ -0,0 +1,3 @@
+ Wavelength for Ge = 17252.8 A 

+Wavelength for Si = 11292.7 A 

+Wavelength for GaAs = 9410.61 A 
\ No newline at end of file
diff --git a/2243/CH11/EX11.14/Ex11_14.sce b/2243/CH11/EX11.14/Ex11_14.sce
new file mode 100755
index 000000000..5a47365e0
--- /dev/null
+++ b/2243/CH11/EX11.14/Ex11_14.sce
@@ -0,0 +1,17 @@
+clc();

+clear;

+//Given :

+sigma = 4*10^-4; // conductivity at room temperature in ohm^-1 m^-1

+M = 28.1; // atomic weight in kg/kmole

+d = 2330; // density in kg/m^3

+dop = 10^8 ;// doping per 10^8 silicon atoms

+e = 1.6*10^-19; // charge of an electron in C

+mue = 0.135; // mobility of free electrons for silicon in m^2/Vs

+Na = 6.023*10^26 ; // Avagadro's constant in atoms/kmole

+N = (d*Na)/M; //atoms/m^3

+Nd = N/dop; // per m^3

+n = Nd; // electron concentration / m^3

+sigma1 = n*e*mue; // conductivity in ohm^-1 m^-1

+t = sigma1/sigma; // number of times the conductivity  increased

+printf("Conductivity increased %d times .",t);

+//Result obtained differs from that in textbook, because approximate value for sigma1 was considered.

diff --git a/2243/CH11/EX11.14/Res11_14.txt b/2243/CH11/EX11.14/Res11_14.txt
new file mode 100755
index 000000000..d9f746e80
--- /dev/null
+++ b/2243/CH11/EX11.14/Res11_14.txt
@@ -0,0 +1 @@
+ Conductivity increased 26968 times .
\ No newline at end of file
diff --git a/2243/CH11/EX11.3/Ex11_3.sce b/2243/CH11/EX11.3/Ex11_3.sce
new file mode 100755
index 000000000..43b309cee
--- /dev/null
+++ b/2243/CH11/EX11.3/Ex11_3.sce
@@ -0,0 +1,6 @@
+clc();

+clear;

+//Given :

+n =8.48*10^28; // number of conduction electrons / m^3

+Ef = 3.65*10^-19*(n^0.6667);//Fermi energy in eV

+printf("Fermi energy : %.2f eV ",Ef);

diff --git a/2243/CH11/EX11.3/Res11_3.txt b/2243/CH11/EX11.3/Res11_3.txt
new file mode 100755
index 000000000..3119dd98f
--- /dev/null
+++ b/2243/CH11/EX11.3/Res11_3.txt
@@ -0,0 +1 @@
+ Fermi energy : 7.06 eV  
\ No newline at end of file
diff --git a/2243/CH11/EX11.4/Ex11_4.sce b/2243/CH11/EX11.4/Ex11_4.sce
new file mode 100755
index 000000000..5772185b7
--- /dev/null
+++ b/2243/CH11/EX11.4/Ex11_4.sce
@@ -0,0 +1,7 @@
+clc();

+clear;

+//Given :

+Ef = 7.04 ; // Ef for copper in eV

+kT = 0.026; // kT value at room temperature in eV

+F = (3/2)*(0.026/7.04); // Fraction of electrons 

+printf("Fraction of electrons which are excited  are %.4f  or %.2f percentage.",F, F*100);

diff --git a/2243/CH11/EX11.4/Res11_4.txt b/2243/CH11/EX11.4/Res11_4.txt
new file mode 100755
index 000000000..b06d47e55
--- /dev/null
+++ b/2243/CH11/EX11.4/Res11_4.txt
@@ -0,0 +1 @@
+ Fraction of electrons which are excited  are 0.0055  or 0.55 percentage. 
\ No newline at end of file
diff --git a/2243/CH11/EX11.6/Ex11_6.sce b/2243/CH11/EX11.6/Ex11_6.sce
new file mode 100755
index 000000000..c36a9e618
--- /dev/null
+++ b/2243/CH11/EX11.6/Ex11_6.sce
@@ -0,0 +1,16 @@
+clc();

+clear;

+//Given :

+ni1 = 2.5*10^19; // per m^3 for Ge

+ni2 = 1.5*10^16; // per m^3 for Si

+mu_e1 = 0.38; // mobility of free electrons for Ge in m^2/Vs

+mu_h1 = 0.18; //mobility of holes for Ge in m^2/Vs

+mu_e2 = 0.13;//mobility of free electrons for Si in m^2/Vs

+mu_h2 = 0.05;//mobility of holes for Si in m^2/Vs

+e = 1.6*10^-19; // charge of an electron in C

+sigma1 = ni1*e*(mu_e1 + mu_h1); // intrinsic conductivity in mho m^-1 for Ge

+sigma2 = ni2*e*(mu_e2 + mu_h2);// intrinsic conductivity in mho m^-1 for Si

+rho1 = 1/sigma1; //intrinsic resistivity in ohm m for Ge

+rho2 = 1/sigma2;//intrinsic resistivity in ohm m for Si

+printf("Resistivity of Ge %.3f ohm m \n",rho1);

+printf("Resistivity of Si %.3f x 10^3 ohm m",rho2*10^-3);

diff --git a/2243/CH11/EX11.6/Res11_6.txt b/2243/CH11/EX11.6/Res11_6.txt
new file mode 100755
index 000000000..b052d88d7
--- /dev/null
+++ b/2243/CH11/EX11.6/Res11_6.txt
@@ -0,0 +1,2 @@
+ Resistivity of Ge 0.446 ohm m 

+Resistivity of Si 2.315 x 10^3 ohm m  
\ No newline at end of file
diff --git a/2243/CH11/EX11.7/Ex11_7.sce b/2243/CH11/EX11.7/Ex11_7.sce
new file mode 100755
index 000000000..09b804ace
--- /dev/null
+++ b/2243/CH11/EX11.7/Ex11_7.sce
@@ -0,0 +1,16 @@
+clc();

+clear;

+//Given :

+//Fraction F = n/N

+Eg = 0.72; // Energy gap in eV

+k = 0.026/300;// kT value at 300 K , so k = kT/T

+T1 = 30; // Temperature in K

+T2 = 300; //Temperature in K

+T3 = 1210;//Temperature in K

+//Fraction of electrons : n/N = exp(-Eg/2*k*T)

+F1 = exp(-Eg/(2*k*T1));

+F2 = exp(-Eg/(2*k*T2));

+F3 = exp(-Eg/(2*k*T3));

+printf(" For 30 K , n/N  = %.1f x 10^-61\n",F1*10^61);

+printf(" For 300 K , n/N  = %.1f x 10^-7\n",F2*10^7);

+printf(" For 1210 K , n/N  = %.3f \n",F3);

diff --git a/2243/CH11/EX11.7/Res11_7.txt b/2243/CH11/EX11.7/Res11_7.txt
new file mode 100755
index 000000000..465746176
--- /dev/null
+++ b/2243/CH11/EX11.7/Res11_7.txt
@@ -0,0 +1,4 @@
+For 30 K , n/N  = 7.4 x 10^-61

+ For 300 K , n/N  = 9.7 x 10^-7

+ For 1210 K , n/N  = 0.032 

+ 
\ No newline at end of file
diff --git a/2243/CH11/EX11.8/Ex11_8.sce b/2243/CH11/EX11.8/Ex11_8.sce
new file mode 100755
index 000000000..328a3489d
--- /dev/null
+++ b/2243/CH11/EX11.8/Ex11_8.sce
@@ -0,0 +1,13 @@
+clc();

+clear;

+//Given :

+Eg1= 0.72; //Energy gap for Germanium in eV

+Eg2= 1.10; //Energy gap for Silicon in eV

+Eg3= 5.6; //Energy gap for diamond in eV

+//Fraction of electron : n/N = exp(-Eg/(2*k*T)) , k*T = 0.026 eV

+F1 = exp(-Eg1/(2*0.026)); // For Germanium

+F2 = exp(-Eg2/(2*0.026)); // For Silicon

+F3 = exp(-Eg3/(2*0.026)); // For diamond

+printf("For Germanium , n/N = %.1f x 10^-7\n",F1*10^7);

+printf("For Silicon , n/N = %.1f x 10^-10\n",F2*10^10);

+printf("For diamond, n/N = %.1f x 10^-47",F3*10^47);

diff --git a/2243/CH11/EX11.8/Res11_8.txt b/2243/CH11/EX11.8/Res11_8.txt
new file mode 100755
index 000000000..3777124bb
--- /dev/null
+++ b/2243/CH11/EX11.8/Res11_8.txt
@@ -0,0 +1,3 @@
+ For Germanium , n/N = 9.7 x 10^-7

+For Silicon , n/N = 6.5 x 10^-10

+For diamond, n/N = 1.7 x 10^-47 
\ No newline at end of file
diff --git a/2243/CH11/EX11.9/Ex11_9.sce b/2243/CH11/EX11.9/Ex11_9.sce
new file mode 100755
index 000000000..90050871a
--- /dev/null
+++ b/2243/CH11/EX11.9/Ex11_9.sce
@@ -0,0 +1,9 @@
+clc();

+clear;

+//Given :

+D = 5*10^28; // density of atoms in silicon per m^3

+C = 2.0*10^8; //donor concentration

+ND = D/C; // donor atoms density per m^3

+// ND = 4.82*10^21*T^(3/2)

+T = (ND/(4.82*10^21))^(2/3);

+printf("Temperature = %.2f K",T);

diff --git a/2243/CH11/EX11.9/Res11_9.txt b/2243/CH11/EX11.9/Res11_9.txt
new file mode 100755
index 000000000..645cc2c47
--- /dev/null
+++ b/2243/CH11/EX11.9/Res11_9.txt
@@ -0,0 +1 @@
+ Temperature = 0.14 K 
\ No newline at end of file